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    • 7. 发明授权
    • Sintered body of silicon nitride and method of producing the same
    • 氮化硅烧结体及其制造方法
    • US5756411A
    • 1998-05-26
    • US696823
    • 1996-08-20
    • Seiji NakahataAkira YamakawaHisao Takeuchi
    • Seiji NakahataAkira YamakawaHisao Takeuchi
    • C04B35/591
    • C04B35/591
    • The invention reduces the time required for nitriding in the process of reaction sintering for production of a sintered body of silicon nitride, thereby improving productivity, and provides a sintered body of silicon nitride having sufficient compactness and high strength which can be produced by reaction sintering. The sintered body is Si.sub.3 N.sub.4 having an unpaired electron density of 10.sup.15 /cm.sup.3 to 10.sup.21 /cm.sup.3. The sintered body is produced through reaction sintering by using a Si powder having an unpaired electron density of 10.sup.15 -10.sup.20 /cm.sup.3, which is obtained by annealing a commercially available Si powder at temperatures of 300.degree. to 800.degree. C. in other than nitrogen atmosphere for 3-5 hours. In particular, the sintered body is produced by adding to the so obtained Si powder, together with a sintering assistant, an element having a valence of, particularly, from +1 to +3, the element having a covalent bond radius RM which bears such a relation with the covalent bond radius RSi of Si that (RM - RSi)/RSi
    • PCT No.PCT / JP95 / 02679 Sec。 371日期1996年8月20日 102(e)日期1996年8月20日PCT 1995年12月26日PCT公布。 WO96 / 20144 PCT出版物 日本1996年7月4日本发明减少了在制造氮化硅烧结体的反应烧结过程中氮化所需的时间,从而提高了生产率,并提供了具有足够的致密性和高强度的氮化硅烧结体,其可以是 通过反应烧结制备。 烧结体是不成对电子密度为1015 / cm 3至1021 / cm 3的Si 3 N 4。 通过使用不成对电子密度为1015〜1020 / cm 3的Si粉末,通过反应烧结制造烧结体,其通过在氮气气氛以外的温度下在300℃〜800℃下退火市售的Si粉末而得到 持续3-5小时。 特别地,通过将​​如此获得的Si粉末与烧结助剂一起加入具有共价键半径RM的元素(特别是从+1至+3的价数)特别是这样的元素制备烧结体 与RS的共价键半径RSi(RM-RSi)/ RSi <0.5的关系,或作为氮气发生剂的元素的化合物,并使所得复合材料进行反应烧结。
    • 9. 发明授权
    • Method of manufacturing a ceramics-type vacuum vessel
    • 制造陶瓷型真空容器的方法
    • US5603788A
    • 1997-02-18
    • US457013
    • 1995-06-01
    • Tetsuya AbeYoshio MurakamiHisao TakeuchiAkira YamakawaMasaya Miyake
    • Tetsuya AbeYoshio MurakamiHisao TakeuchiAkira YamakawaMasaya Miyake
    • C04B37/00F16J12/00H05H7/14B32B31/12B32B31/26
    • H05H7/14
    • A vacuum vessel is provided in which the majority of a vessel wall including an annular wall portion (1) and a plate-wall portion (2) is formed of ceramic material such as silicon nitride, for example. To bond the plural wall members together, bonding faces having a surface flatness of not more than 1 .mu.m are prepared thereon, and then a ceramic powder bonding substance with an average particle diameter of not more than 1 .mu.m is interposed between adjacent bonding faces and subjected to heating. Because the generation of gas, such as hydrogen, from the wall of the ceramic vessel is reduced, extremely high vacuum can be generated and maintained in the interior of the vacuum vessel. Also, because the wall of the vacuum vessel has a high permeability with respect to a magnetic field and an electric field, the vacuum vessel can be used as a vessel in a particle accelerator that allows the high precision control of charged particles therein by means of an electromagnetic field.
    • 提供一种真空容器,其中包括环形壁部分(1)和板壁部分(2)的容器壁的大部分由诸如氮化硅的陶瓷材料形成。 为了将多个壁构件结合在一起,在其上制备具有不大于1μm的表面平坦度的接合面,然后将平均粒径不大于1μm的陶瓷粉末粘合物置于相邻的接合面 并进行加热。 因为从陶瓷容器的壁产生气体,例如氢气,所以可以在真空容器的内部产生极高的真空度并维持真空。 此外,由于真空容器的壁相对于磁场和电场具有高磁导率,所以真空容器可以用作粒子加速器中的容器,其允许通过以下方式对带电粒子进行高精度控制: 电磁场。