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1. 发明专利

JP2005170749A Fine semiconductor particle having ultrafine pores on its surface, its forming method and device using it 审中-公开
标题翻译：在其表面上具有超细孔的精细半导体颗粒，其形成方法和使用其的装置
公开(公告)号：JP2005170749A
公开(公告)日：2005-06-30
申请号：JP2003414207
申请日：2003-12-12
申请人： Takashi Matsuura , Morita Kagaku Kogyo Kk , St John Braithwaite Nicholas , ニコラスセイントジョンブレイスウェイトNicholas St. John Braithwaite , 孝松浦 , 森田化学工業株式会社
发明人： MATSUURA TAKASHI , NICHOLAS ST JOHN BRAITHWAITE , MIYAMOTO MITSUO
IPC分类号： C01B33/02
摘要： PROBLEM TO BE SOLVED: To provide a fine semiconductor particle like a fine silicon particle having a plurality of ultrafine pores on its surface irregularly, its forming method and a device using it.
SOLUTION: The fine semiconductor particle whose particle diameter is 0.0003-1 mm and having a plurality of the ultrafine pores whose pore diameter is 0.003-10 μm on its surface irregularly is formed by contacting a fine raw semiconductor particle with the mixture of a hydrofluoric acid solution and a kind of oxidizer. The fine semiconductor particle having the ultrafine pores on the formed surface is used for the device.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了在其表面上不规则地提供具有多个超细孔的细硅颗粒的精细半导体颗粒，其形成方法和使用它的装置。解决方案：通过使细的原料半导体颗粒与微粒半导体颗粒的混合物接触，形成粒径为0.0003-1mm且具有多个孔径为0.003-10μm的超细孔的细微半导体颗粒，氢氟酸溶液和一种氧化剂。该器件使用在成形表面上具有超细孔的微细半导体粒子。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JP2003014966A Method for manufacturing optical waveguide 审中-公开
标题翻译：制造光波导的方法
公开(公告)号：JP2003014966A
公开(公告)日：2003-01-15
申请号：JP2001201911
申请日：2001-07-03
申请人： Takashi Matsuura , Tokuyama Corp , 孝松浦 , 株式会社トクヤマ
发明人： MATSUURA TAKASHI , MUROTA JUNICHI , MIYAHARA KENICHIRO , NONAKA TORU , MITSUNABE YUICHIRO
IPC分类号： G02B6/13 , G02B6/12
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing an optical waveguide by which an optical waveguide having a core pattern formed on a substrate and suitable to be used as an optical integrated circuit having large difference in the refractive index between the clad and core can be easily manufactured without performing complicated processes of forming and removing a resist pattern and etching. SOLUTION: After a film of a photosensitive material, for example, consisting of a mixture of polymethyl silazane and a photoacid producing agent is formed on a substrate of quartz or the like, the film is exposed by using a photomask having the core pattern of the optical waveguide and then developed to form the core pattern consisting of a photosensitive material on the substrate. Then the photosensitive material constituting the core pattern is heat-treated, for example, at about 900 deg.C in an argon atmosphere to stabilize and increase the refractive index to form the optical waveguide.
摘要翻译：要解决的问题：提供一种制造光波导的方法，其中具有形成在基板上的芯图案的光波导适合用作包层和芯之间的折射率差大的光集成电路容易地制造而不执行形成和去除抗蚀剂图案和蚀刻的复杂工艺。解决方案：在石英等的基板上形成感光材料膜，例如由聚甲基硅氮烷和光致酸产生剂的混合物组成的薄膜，通过使用具有核心图案的光掩模来曝光该膜光波导，然后显影以形成由基底上的感光材料组成的芯图案。然后将构成芯图案的感光材料在氩气气氛中例如在约900℃下进行热处理，以稳定和增加折射率以形成光波导。

3. 发明申请

US20110146095A1 DIMENSION MEASURING DEVICE FOR LONG MATERIAL 有权
标题翻译：长材尺寸测量装置
公开(公告)号：US20110146095A1
公开(公告)日：2011-06-23
申请号：US13056317
申请日：2009-07-10
申请人： Mutsumi Tanida , Takashi Matsuura , Yasuhisa Kasa
发明人： Mutsumi Tanida , Takashi Matsuura , Yasuhisa Kasa
IPC分类号： G01B5/08
CPC分类号： G01B5/08 , G01B5/0009 , G01B5/163 , G01B21/047 , G01B21/10
摘要： A dimension measuring device 100 in accordance with the present invention includes an end face following mechanism 1 that butts against an end face E of a long material, a dimension measuring mechanism 2 for measuring the dimensions of the long material, and a pushingly moving mechanism 3 for pushingly moving the end face following mechanism toward the end face of the long material. The end face following mechanism includes a plurality of contact sensors for detecting a contact state, and is turnable around two axes intersecting at right angles with each other. The pushingly moving mechanism pushingly moves the end face following mechanism into the state in which the plurality of contact sensors detect that the end face following mechanism butts against the end face of the long material. The dimension measuring mechanism is pushingly moved integrally and is turnable integrally with the end face following mechanism, and measures the dimensions of the long material when it is detected, by the plurality of contact sensors, that the end face following mechanism butts against the end face of the long material.
摘要翻译：根据本发明的尺寸测量装置100包括抵靠长材料的端面E的端面跟随机构1，用于测量长材料尺寸的尺寸测量机构2和推动机构3 用于将端面跟随机构推向长材料的端面。端面跟随机构包括用于检测接触状态的多个接触传感器，并且可绕彼此成直角相交的两个轴线转动。推动移动机构将端面跟随机构推动地移动到多个接触传感器检测到端面跟随机构抵靠长材料的端面的状态。尺寸测量机构一体地推动移动并且与端面跟随机构一体地转动，并且通过多个接触传感器测量长材料的尺寸时，端面跟随机构抵靠端面的长材料。

4. 发明申请

US20090269576A1 Optical Thin Film, Optical Device and Method of Manufacturing the Same 审中-公开
标题翻译：光学薄膜，光学装置及其制造方法
公开(公告)号：US20090269576A1
公开(公告)日：2009-10-29
申请号：US12083087
申请日：2006-10-24
申请人： Kazuhiko Oda , Takashi Matsuura , Yoshihiro Akahane , Toshihiko Ushiro , Takahiro Imai
发明人： Kazuhiko Oda , Takashi Matsuura , Yoshihiro Akahane , Toshihiko Ushiro , Takahiro Imai
IPC分类号： B32B9/00 , B29D11/00
CPC分类号： G02B6/122 , G02B1/105 , G02B1/14 , Y10T428/265
摘要： In an optical thin film of the present invention, a hydrogenated carbon film containing at least carbon and hydrogen as major components is formed on a substrate, and at least one protective layer including one of an oxide film, a nitride film, an oxynitride film, a fluoride film, and a film containing hydrogen and carbon as major components is superposed thereon.
摘要翻译：在本发明的光学薄膜中，在基板上形成至少含有碳和氢作为主要成分的氢化碳膜，至少一个保护层包括氧化膜，氮化物膜，氧氮化物膜，氟化物膜和含有氢和碳作为主要成分的膜叠加在其上。

5. 发明授权

US07466491B2 DLC film and method for forming the same 失效
标题翻译： DLC膜及其形成方法
公开(公告)号：US07466491B2
公开(公告)日：2008-12-16
申请号：US11660036
申请日：2005-07-06
申请人： Takashi Matsuura , Kazuhiko Oda , Toshihiko Ushiro
发明人： Takashi Matsuura , Kazuhiko Oda , Toshihiko Ushiro
IPC分类号： G02B3/00
CPC分类号： G02B5/1857 , G02B3/0087
摘要： The present invention provides a DLC film that functions as an optical element and that can easily be miniaturized or integrated, and a method for forming the DLC film. A DLC film that has a refractive index varying continuously in at least one width direction from the center O of the DLC film. More specifically, a DLC film in which the refractive index decreases continuously in at least one width direction from the center O of the DLC film, and thereby the DLC film functions as a convex lens. A DLC film in which the refractive index increases continuously in at least one width direction from the center of the DLC film, and thereby the DLC film functions as a concave lens. A DLC film that has a refractive index varying continuously in the thickness direction. In addition, a method for forming a DLC film, including irradiating the DLC film with an energy beam to change the refractive index of the DLC film continuously in at least one width direction from the center of the DLC film and/or the thickness direction.
摘要翻译：本发明提供了用作光学元件并且可以容易地小型化或集成的DLC膜以及用于形成DLC膜的方法。具有从DLC膜的中心O至少一个宽度方向连续变化的折射率的DLC膜。更具体地说，其中折射率从DLC膜的中心O在至少一个宽度方向上连续降低的DLC膜，从而DLC膜用作凸透镜。 DLC膜的折射率在距离DLC膜的中心的至少一个宽度方向上连续增加，从而DLC膜用作凹透镜。折射率在厚度方向连续变化的DLC膜。另外，用于形成DLC膜的方法包括用能量束照射DLC膜，以从DLC膜的中心和/或厚度方向在至少一个宽度方向连续地改变DLC膜的折射率。

6. 发明授权

US07409254B2 Data management system and trace system 有权
标题翻译：数据管理系统和跟踪系统
公开(公告)号：US07409254B2
公开(公告)日：2008-08-05
申请号：US11289018
申请日：2005-11-29
申请人： Osamu Oyamada , Takashi Matsuura , Hiroyuki Kishimoto , Mitsuhiro Sato , Yoshitaka Miki
发明人： Osamu Oyamada , Takashi Matsuura , Hiroyuki Kishimoto , Mitsuhiro Sato , Yoshitaka Miki
IPC分类号： G06F19/00 , G06F17/00
CPC分类号： G06F17/50 , G06F2217/04 , Y10S707/99945 , Y10S707/99948
摘要： A design data management program directs a computer to perform a procedure of converting design data generated at a designing side to a data format applicable to a production side and transmitting the data to the production side, and a procedure of converting the data to data described in a predetermined language and storing the data in the storage device when a notification of a change of the design data is received from the production side.
摘要翻译：设计数据管理程序指示计算机执行将在设计侧生成的设计数据转换为适用于生产方的数据格式并将数据发送到生产方的过程，以及将数据转换为当从生产方接收到设计数据的改变的通知时，将预定的语言存储在存储装置中。

7. 发明授权

US07218447B2 Diamond-like carbon film and method for qualitatively transforming diamond-like carbon film 失效
标题翻译：类金刚石碳膜和定性转化类金刚石碳膜的方法
公开(公告)号：US07218447B2
公开(公告)日：2007-05-15
申请号：US10711262
申请日：2004-09-07
申请人： Soichiro Okubo , Takashi Matsuura
发明人： Soichiro Okubo , Takashi Matsuura
IPC分类号： G02B5/30
CPC分类号： G02B1/02 , G02B1/12 , G02F1/09 , G02F1/093
摘要： A diamond-like carbon (DLC) film having refractive indices distributed in a pattern oriented within the plane of the film or on a bias with respect to the thickness of the film. Such films may be useful in low-cast Faraday rotators, in polarizers (analyzers), and in magnetic substances, and in Faraday rotators and optical isolators that can handle a plurality of wavelengths. The refractive index structure may be imparted to the DLC film, for example, by irradiating at least one region of the film with either a particle or energy beam.
摘要翻译：类金刚石碳（DLC）膜，其折射率分布在取向于膜的平面内的图案中，或者相对于膜的厚度偏置。这种薄膜可用于低压法拉第旋转器，偏振器（分析仪）和磁性物质以及可处理多个波长的法拉第旋转器和光隔离器中。折射率结构可以赋予DLC膜，例如通过用颗粒或能量束照射膜的至少一个区域。

8. 发明申请

US20060287749A1 Data management system and trace system 有权
标题翻译：数据管理系统和跟踪系统
公开(公告)号：US20060287749A1
公开(公告)日：2006-12-21
申请号：US11289018
申请日：2005-11-29
申请人： Osamu Oyamada , Takashi Matsuura , Hiroyuki Kishimoto , Mitsuhiro Sato , Yoshitaka Miki
发明人： Osamu Oyamada , Takashi Matsuura , Hiroyuki Kishimoto , Mitsuhiro Sato , Yoshitaka Miki
IPC分类号： G06F19/00
CPC分类号： G06F17/50 , G06F2217/04 , Y10S707/99945 , Y10S707/99948
摘要： A design data management program directs a computer to perform a procedure of converting design data generated at a designing side to a data format applicable to a production side and transmitting the data to the production side, and a procedure of converting the data to data described in a predetermined language and storing the data in the storage device when a notification of a change of the design data is received from the production side.
摘要翻译：设计数据管理程序指示计算机执行将在设计侧生成的设计数据转换为适用于生产方的数据格式并将数据发送到生产方的过程，以及将数据转换为当从生产方接收到设计数据的改变的通知时，将预定的语言存储在存储装置中。

9. 发明授权

US06770507B2 Semiconductor wafer and method for producing the same 失效
标题翻译：半导体晶片及其制造方法
公开(公告)号：US06770507B2
公开(公告)日：2004-08-03
申请号：US09926190
申请日：2001-09-20
申请人： Takao Abe , Takashi Matsuura , Junichi Murota
发明人： Takao Abe , Takashi Matsuura , Junichi Murota
IPC分类号： H01L2100
CPC分类号： H01L21/76243 , H01L21/76254
摘要： There is provided a novel bonded semiconductor wafer having a layered structure alternately stacked with semiconductor layers and insulator layers in two cycles or more and manufactured by means of a bonding process, wherein at least one of the insulator layers is formed with ion implanted oxygen, and a novel manufacturing process for a bonded semiconductor wafer in which an ion implantation separation process is adopted. The novel bonded semiconductor wafer is manufactured by means of a bonding process and has a layered structure alternately stacked with semiconductor layers and insulator layers in two cycles or more, wherein at least one of the insulator layers is formed with ion implanted oxygen.
摘要翻译：提供了一种新颖的键合半导体晶片，其具有交替层叠的半导体层和绝缘体层的两层以上的层叠结构，并且通过接合工艺制造，其中至少一个绝缘体层由离子注入的氧形成，并且用于其中采用离子注入分离工艺的接合半导体晶片的新颖制造方法。新型键合半导体晶片通过接合工艺制造，并且具有在两个周期以上交替层叠的半导体层和绝缘体层的层叠结构，其中至少一个绝缘体层由离子注入的氧形成。

10. 发明授权

US06621145B2 Semiconductor device having a metal-semiconductor junction with a reduced contact resistance 失效
标题翻译：具有具有降低的接触电阻的金属 - 半导体结的半导体器件
公开(公告)号：US06621145B2
公开(公告)日：2003-09-16
申请号：US09866695
申请日：2001-05-30
申请人： Junichi Murota , Yosuke Shimamune , Masao Sakuraba , Takashi Matsuura
发明人： Junichi Murota , Yosuke Shimamune , Masao Sakuraba , Takashi Matsuura
IPC分类号： H01L29167
CPC分类号： H01L21/02576 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/28525 , H01L21/28562 , H01L29/456
摘要： A metal-semiconductor junction comprises a wiring metal layer and a semiconductor layer. To reduce the contact resistance of the junction, a region doped with an n- or p-type impurity and having a high carrier concentration of 1021 cm−3 or more is provided in a near-surface part of the semiconductor layer (at a distance of 10 nm or less from the metal layer. The high-carrier concentration region is composed of n- or p-type impurity layers and IV-group semiconductor layers that have been alternately deposited upon another by means of, for example, vapor-phase growth.
摘要翻译：金属 - 半导体结包括布线金属层和半导体层。为了降低结的接触电阻，在半导体层的近表面部分设置掺杂有n型或p型杂质且具有1021cm-3以上的高载流子浓度的区域与金属层相比为10nm以下，高载流子浓度区域由n型或p型杂质层和IV族半导体层构成，这些层通过例如气相成长。

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