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1. 发明授权

US5698029A Vertical furnace for the growth of single crystals 失效
标题翻译：立式炉用于生长单晶
公开(公告)号：US5698029A
公开(公告)日：1997-12-16
申请号：US659013
申请日：1996-06-04
申请人： Takao Fujikawa , Katsuhiro Uehara , Yoshihiko Sakashita , Hiroshi Okada , Takao Kawanaka
发明人： Takao Fujikawa , Katsuhiro Uehara , Yoshihiko Sakashita , Hiroshi Okada , Takao Kawanaka
IPC分类号： C30B11/00 , C30B35/00
CPC分类号： C30B11/003 , C30B11/002 , C30B29/40 , Y10T117/10 , Y10T117/1016
摘要： A high-pressure container 1 as a furnace casing is equipped with insulating cylinder 2 of an inverted glass shape, and heater elements 18 individually mounted on heater mounting plates 16 arranged in parallel to section vertically the space for arranging the heater elements 18 at a given interval in the insulating cylinder 2. For the procedures of single crystal growth by heating in a high-pressure gas atmosphere, the insulating cylinder 2 and the heater mounting plates 16 can suppress the effects of spontaneous convection of a high-pressure gas and the effects of the radiation heat from an adjacent heater element, as less as possible, so that the temperature controllability of each heating zone can be improved whereby the vertical temperature distribution in the furnace can be controlled appropriately. Also, a heater element 18 of a larger aperture size can be maintained at a stably supported state, whereby a single crystal of a larger dimension can be grown.
摘要翻译：作为炉壳的高压容器1配备有倒置玻璃形状的绝缘筒体2和加热器元件18，其单独地安装在加热器安装板16上，该加热器安装板16垂直地布置在用于将加热器元件18布置在给定的空间绝缘筒2的间隔。对于通过在高压气体气氛中加热而实现单晶生长的步骤，绝缘筒2和加热器安装板16可以抑制高压气体的自发对流的效果和效果的相邻加热器元件的辐射热量越少越好，从而可以提高每个加热区域的温度可控性，从而可以适当地控制炉内的垂直温度分布。此外，可以将较大孔径的加热器元件18保持在稳定的支撑状态，从而可以生长更大尺寸的单晶。

2. 发明授权

US5685907A Apparatus for preparing compound single crystals 失效
标题翻译：复合单晶制备装置
公开(公告)号：US5685907A
公开(公告)日：1997-11-11
申请号：US586825
申请日：1996-01-31
申请人： Takao Fujikawa , Katsuhiro Uehara , Yoshihiko Sakashita , Kazuya Suzuki , Hiroshi Okada , Takao Kawanaka , Seiichiro Ohmoto
发明人： Takao Fujikawa , Katsuhiro Uehara , Yoshihiko Sakashita , Kazuya Suzuki , Hiroshi Okada , Takao Kawanaka , Seiichiro Ohmoto
IPC分类号： C30B11/00 , C30B35/00
CPC分类号： C30B11/00 , C30B29/48 , Y10T117/102
摘要： A method and apparatus for the preparation of single crystals of group II-VI compounds such as ZnSe and CdTe and group III-V compounds such as InP and GaP or of ternary compounds thereof, from which some of their components are likely to be dissociated and evaporated during crystal growth at high temperatures. Single crystals are prepared which enable the preparation of high quality compound single crystals and prevent the contamination of furnace structures. The method includes melting a source material in a container by heating in a furnace body and solidifying the melt by cooling from the bottom to grow a single crystal. The container is enclosed by an airtight chamber communicating to the outside with a pressure equalizing passage. Heating is performed while the passage is held at a low temperature equal to or lower than the melting point of a high-dissociation-pressure component of the source material. The apparatus includes a container for holding the source material, a hermetical furnace body including a heater to heat the container, an airtight chamber inside the heater which encloses the container and a pressure equalizing passage communicating with the airtight chamber and forming a lower portion of the chamber.
摘要翻译： PCT No.PCT / JP95 / 01069 Sec。 371日期1996年1月31日 102（e）日期1996年1月31日PCT归档1995年6月1日PCT公布。 WO95 / 33873 PCT出版物日期：1995年12月14日一种用于制备诸如ZnSe和CdTe的II-VI族化合物的单晶和InP和GaP的III-V族化合物或其三元化合物的方法和装置，其一些组分为在高温下晶体生长期间可能会被解离和蒸发。制备单晶，其可制备高质量的复合单晶并防止炉结构的污染。该方法包括通过在炉体中加热熔化容器中的源材料并通过从底部冷却来固化熔体以生长单晶。容器由与压力平衡通道连通的气密室封闭。当通道保持在等于或低于源材料的高解离压分量的熔点的低温时进行加热。该装置包括用于保持源材料的容器，包括用于加热容器的加热器的密封炉体，包围容器的加热器内的气密室和与气密室连通的压力平衡通道，并形成房间。

3. 发明授权

US5679151A Method for growing single crystal 失效
标题翻译：生长单晶的方法
公开(公告)号：US5679151A
公开(公告)日：1997-10-21
申请号：US604663
申请日：1996-02-21
申请人： Seiichiro Ohmoto , Katsuhiro Uehara , Hiroshi Okada , Yoshihiko Sakashita , Takao Kawanaka
发明人： Seiichiro Ohmoto , Katsuhiro Uehara , Hiroshi Okada , Yoshihiko Sakashita , Takao Kawanaka
IPC分类号： C30B11/00 , C30B15/00 , C30B11/12
CPC分类号： C30B11/00 , C30B15/00 , C30B29/48 , Y10T117/1016 , Y10T117/1024
摘要： Method of forming a single crystal of ZnSe. A charge of material is loaded in a container. The charge of material is melted to create a melt of material. A single crystal is grown from the melt of material. Then, the grown crystal is brought out of contact with the wall surface of the container. The temperature of the crystal is varied across its phase transition temperature range while establishing a temperature gradient from one end of the grown crystal to the other end. This method is carried out, using a crystal grower comprising the container and an elevation member. The container is disposed inside a high-pressure vessel. The container tapers off downward and is provided with a hole extending from its lower end. The elevation member is inserted into the hole from below to push the grown crystal in a crucible upward. The container is composed of plural separable parts. After the growth of the crystal, the assembled parts are moved substantially horizontally outwardly so that the parts are separated from each other.
摘要翻译：形成ZnSe单晶的方法。物料装入容器中。材料的充电被熔化以产生材料熔体。从材料的熔体中生长单晶。然后，将生长的晶体与容器的壁表面脱离接触。晶体的温度在其相变温度范围内变化，同时建立从生长晶体的一端到另一端的温度梯度。使用包括容器和升降构件的结晶器进行该方法。容器设置在高压容器内。容器向下逐渐变细并且设有从其下端延伸的孔。升降构件从下方插入孔中，将生长的晶体向上推入坩埚中。容器由多个可分离部分组成。在晶体生长之后，组装的部件基本上水平地向外移动，使得部件彼此分离。

4. 发明授权

US06712081B1 Pressure processing device 失效
标题翻译：压力加工装置
公开(公告)号：US06712081B1
公开(公告)日：2004-03-30
申请号：US09650812
申请日：2000-08-30
申请人： Katsuhiro Uehara , Yoshihiko Sakashita , Takeshi Kanda , Takeo Nishimoto
发明人： Katsuhiro Uehara , Yoshihiko Sakashita , Takeshi Kanda , Takeo Nishimoto
IPC分类号： B08B300
CPC分类号： H01L21/67057 , B08B7/0021 , Y10S134/902
摘要： A pressure processing device including a vessel having a body and an opening/closing member. A seal member is provided on a joining surface between the body and the opening/closing member, and a non-sliding joining surface is provided which is not slidably moved when the member is opened and closed. A device is provided including a diaphragm for housing an object to be processed, and a fluid introducing passage to the vessel provided so that a greater part of a fluid flowing into the vessel flows into the diaphragm. The diaphragm can be formed of heat insulating material, and a filter can be provided for removing particles installed on the side of the diaphragm into which a fluid flows. A plate having a labyrinth construction can be provided for trapping particles by parts on a surface thereof. A pressure processing device in which an object may be washed is also provided.
摘要翻译：一种压力处理装置，包括具有主体和开闭部件的容器。密封构件设置在主体和打开/关闭构件之间的接合表面上，并且设置非滑动接合表面，其在构件打开和关闭时不能够滑动。提供了一种装置，其包括用于容纳被处理物体的隔膜，以及设置为使得流入容器的大部分流体流入隔膜的容器的流体引入通道。隔膜可以由绝热材料形成，并且可以设置用于去除安装在流体流入的隔膜侧的颗粒的过滤器。可以提供具有迷宫结构的板，用于通过其表面上的部分捕获颗粒。还提供了可以清洗物体的压力处理装置。

5. 发明授权

US5792271A System for supplying high-pressure medium gas 失效
标题翻译：供应高压中等气体的系统
公开(公告)号：US5792271A
公开(公告)日：1998-08-11
申请号：US845821
申请日：1997-04-28
申请人： Takao Fujikawa , Takahiko Ishii , Tomomitsu Nakai , Yoshihiko Sakashita
发明人： Takao Fujikawa , Takahiko Ishii , Tomomitsu Nakai , Yoshihiko Sakashita
IPC分类号： F27B17/00 , B01J3/02 , B01J4/00 , F17C7/00 , H01L23/02 , C23C14/80
CPC分类号： F17C7/00 , B01J3/02 , B01J4/008 , F17C2205/0332 , F17C2205/0341 , F17C2221/011 , F17C2221/016 , F17C2221/05 , F17C2223/0123 , F17C2227/0348 , F17C2227/0386 , F17C2227/048 , F17C2270/0518
摘要： The present invention provides a system for supplying a high-pressure medium gas suitable for processing a semiconductor to be processed by heating under isostatic pressure in a short cycle. The system includes a gas holder containing a high-pressure medium gas, a compressor for pressurizing the high-pressure medium gas supplied from the gas holder, a high-pressure vessel having a heater, an accumulator for storing the high-pressure medium gas pressurized by the compressor, a first evacuation unit for evacuating the inside of a pipeline for the high-pressure medium gas, a vacuum casing for holding the opening of the high-pressure vessel in a vacuum, a second evacuation unit for evacuating the inside of the vacuum casing, and a valve unit for connecting the high-pressure vessel and the accumulator so that series connection and parallel connection can be switched on the outlet side of the compressor.
摘要翻译：本发明提供了一种用于在短时间内以等压压力下加热适于处理待处理半导体的高压介质气体的系统。该系统包括含有高压介质气体的气体保持器，用于对从气体保持器供给的高压介质气体进行加压的压缩机，具有加热器的高压容器，用于将高压介质气体进行加压的储液器通过压缩机将用于排出高压介质气体的管道内部的第一抽空单元，用于将高压容器的开口保持在真空中的真空壳体，用于抽出高压介质气体的内部的第二抽空单元真空壳体和用于连接高压容器和蓄能器的阀单元，使得可以在压缩机的出口侧上切换串联和并联连接。

6. 发明授权

US5898727A High-temperature high-pressure gas processing apparatus 失效
标题翻译：高温高压气体处理设备
公开(公告)号：US5898727A
公开(公告)日：1999-04-27
申请号：US845822
申请日：1997-04-28
申请人： Takao Fujikawa , Takahiko Ishii , Tomomitsu Nakai , Yoshihiko Sakashita
发明人： Takao Fujikawa , Takahiko Ishii , Tomomitsu Nakai , Yoshihiko Sakashita
IPC分类号： F27B17/00 , C23C14/58 , H01L21/00 , F27D7/06
CPC分类号： C23C14/5806 , C23C14/5886 , H01L21/67017
摘要： The present invention provides a processing apparatus for eliminating pores in via holes of a silicon semiconductor. The apparatus includes a high-pressure vessel divided into at least two vessel component members in the axial direction thereof, at least one of which has a cooling unit, a frame for holding a load acting in the axial direction of the high-pressure vessel in processing a workpiece to be processed in the high-pressure vessel, an actuator for moving the vessel component members of the high-pressure vessel in the axial direction thereof so as to load and unload the workpiece, a sealing unit fitted to a portion for loading and unloading the workpiece, which is formed when the vessel component members are moved in the axial direction of the vessel, and a retractable cotter unit for transmitting a load acting in the axial direction of the high-pressure vessel to the frame.
摘要翻译：本发明提供一种用于消除硅半导体的通孔中的孔的处理装置。该装置包括在其轴向方向上分成至少两个容器部件的高压容器，其中至少一个具有冷却单元，用于保持在高压容器的轴向方向上作用的负载的框架在高压容器内加工待加工的工件，用于使高压容器的容器部件沿其轴向移动以便加载和卸载工件的致动器，安装到用于装载的部分的密封单元以及卸载当容器部件沿容器的轴向移动时形成的工件，以及用于将在高压容器的轴向方向上作用的负载传递到框架的伸缩开口单元。

7. 发明授权

US08652370B2 Hot isostatic pressing method and apparatus 有权
标题翻译：热等静压法及装置
公开(公告)号：US08652370B2
公开(公告)日：2014-02-18
申请号：US11671109
申请日：2007-02-05
申请人： Takao Fujikawa , Tomomitsu Nakai , Makoto Yoneda , Shigeo Kofune , Yoshihiko Sakashita , Masahiko Mitsuda
发明人： Takao Fujikawa , Tomomitsu Nakai , Makoto Yoneda , Shigeo Kofune , Yoshihiko Sakashita , Masahiko Mitsuda
IPC分类号： B29C39/04 , B28B7/32
CPC分类号： B30B11/002 , B28B11/24
摘要： A hot isostatic pressing method is disclosed wherein workpieces are accommodated within a high pressure vessel and the interior of the high pressure vessel is filled with an inert gas of a high temperature and a high pressure to treat the workpieces. The method includes a cooling step which is performed after maintaining the interior of the high pressure vessel at a high temperature and a high pressure for a predetermined time and in which a liquid inert gas is fed into the high pressure vessel. According to this method it is possible to shorten the cycle time of an HIP apparatus.
摘要翻译：公开了一种热等静压法，其中将工件容纳在高压容器内，高压容器的内部填充有高温高压惰性气体，以处理工件。该方法包括冷却步骤，其在将高压容器的内部保持在高温和高压预定时间之后进行，并且将液体惰性气体供给到高压容器中。根据该方法，可以缩短HIP装置的循环时间。

8. 发明授权

US5979306A Heating pressure processing apparatus 失效
标题翻译：加热压力处理装置
公开(公告)号：US5979306A
公开(公告)日：1999-11-09
申请号：US47402
申请日：1998-03-25
申请人： Takao Fujikawa , Yutaka Narukawa , Itaru Masuoka , Takahiro Yuki , Yoshihiko Sakashita
发明人： Takao Fujikawa , Yutaka Narukawa , Itaru Masuoka , Takahiro Yuki , Yoshihiko Sakashita
IPC分类号： B01J3/00 , B01J3/03 , B01J3/04 , H01L21/314 , H01L21/324 , H01L21/768 , B30B15/34
CPC分类号： B01J3/008 , B01J3/03 , B01J3/04 , H01L21/314
摘要： A heating pressure processing apparatus in which gas sealing property and safety can be ensured, and economic property can be improved in heating pressure processing of workpieces such as Si wafers sheet by sheet. A processing vessel 1 formed of vessel components 2, 3 is divided into at least two parts or more in the axial direction thereof and has a seal ring 9 provided in the divided parts of the vessel components 2, parts 3 in such a manner as to be replaceable. The vessel components 2, 3 have shaped parts forming a processing space 5 for a workpiece 4 when the divided parts are sealed through the seal ring 9, the vessel components 2, 3 also having cooling means 10 for the seal ring 9. A ram is provided 18 for pressing the vessel components 2, 3 in the axial direction of the vessel in order to ensure the sealing in the divided parts; and a gas introducing device 20 is provided for introducing a pressurized gas to the processing space 5 in order to process the workpiece.
摘要翻译：能够确保气体密封性和安全性的加热压力处理装置，并且可以逐张地提高诸如Si晶片的工件的加热压力加工的经济性。由容器部件2,3形成的处理容器1在其轴向上被分成至少两部分以上，并且具有设置在容器部件2，部件3的分割部分中的密封环9，可更换容器部件2,3具有成形部件，当分隔部件通过密封环9密封时，形成工件4的处理空间5，容器部件2,3也具有用于密封环9的冷却装置10。设置用于在容器的轴向方向上按压容器部件2,3，以确保分割部分的密封; 并且设置有用于将加压气体引入处理空间5以便处理工件的气体引入装置20。

9. 发明申请

US20070228596A1 HOT ISOSTATIC PRESSING METHOD AND APPARATUS 有权
标题翻译：热稳定压制方法和装置
公开(公告)号：US20070228596A1
公开(公告)日：2007-10-04
申请号：US11671109
申请日：2007-02-05
申请人： Takao Fujikawa , Tomomitsu Nakai , Makoto Yoneda , Shigeo Kofune , Yoshihiko Sakashita , Masahiko Mitsuda
发明人： Takao Fujikawa , Tomomitsu Nakai , Makoto Yoneda , Shigeo Kofune , Yoshihiko Sakashita , Masahiko Mitsuda
IPC分类号： B29C35/04 , B28B7/32
CPC分类号： B30B11/002 , B28B11/24
摘要： A hot isostatic pressing method is disclosed wherein workpieces are accommodated within a high pressure vessel and the interior of the high pressure vessel is filled with an inert gas of a high temperature and a high pressure to treat the workpieces. The method includes a cooling step which is performed after maintaining the interior of the high pressure vessel at a high temperature and a high pressure for a predetermined time and in which a liquid inert gas is fed into the high pressure vessel. According to this method it is possible to shorten the cycle time of an HIP apparatus.
摘要翻译：公开了一种热等静压法，其中将工件容纳在高压容器内，高压容器的内部填充有高温高压惰性气体，以处理工件。该方法包括冷却步骤，其在将高压容器的内部保持在高温和高压预定时间之后进行，并且将液体惰性气体供给到高压容器中。根据该方法，可以缩短HIP装置的循环时间。

10. 发明授权

US06733592B2 High-temperature and high-pressure treatment device 失效
标题翻译：高温高压处理装置
公开(公告)号：US06733592B2
公开(公告)日：2004-05-11
申请号：US10142990
申请日：2002-05-13
申请人： Takao Fujikawa , Yoichi Inoue , Yutaka Narukawa , Takahiko Ishii , Tsuneharu Masuda , Makoto Kadoguchi , Yoshihiko Sakashita
发明人： Takao Fujikawa , Yoichi Inoue , Yutaka Narukawa , Takahiko Ishii , Tsuneharu Masuda , Makoto Kadoguchi , Yoshihiko Sakashita
IPC分类号： C23C1600
CPC分类号： C30B33/005 , H01L21/67109 , Y10S414/135
摘要： The present invention has an object to obtain a small-size, high-temperature and high-pressure treatment device adapted to treat semiconductor wafers. The high-temperature and high-pressure device of the invention is intended to treat semiconductor wafers in an atmosphere of high-temperature and high-pressure gas, and comprises a pressure vessel having at a lower portion thereof an opening for putting the semiconductor wafers in and out, a lower lid disposed so as to be vertically movable for opening and closing the lower opening, wafer transfer means for stacking and unstacking the semiconductor wafers onto and from the lower lid, and a heater attached to the lower lid for heating the semiconductor wafers.
摘要翻译：本发明的目的是获得适于处理半导体晶片的小尺寸，高温和高压处理装置。本发明的高温高压装置旨在在高温高压气体的气氛中处理半导体晶片，并且包括在其下部具有用于将半导体晶片放置在其中的开口的压力容器并且，设置成能够垂直移动以便打开和关闭下部开口的下盖，用于将半导体晶片堆叠和分离到下盖上的晶片传送装置和附接到下盖的加热半导体的加热器晶圆

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