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    • 1. 发明授权
    • Pressure processing device
    • 压力加工装置
    • US06712081B1
    • 2004-03-30
    • US09650812
    • 2000-08-30
    • Katsuhiro UeharaYoshihiko SakashitaTakeshi KandaTakeo Nishimoto
    • Katsuhiro UeharaYoshihiko SakashitaTakeshi KandaTakeo Nishimoto
    • B08B300
    • H01L21/67057B08B7/0021Y10S134/902
    • A pressure processing device including a vessel having a body and an opening/closing member. A seal member is provided on a joining surface between the body and the opening/closing member, and a non-sliding joining surface is provided which is not slidably moved when the member is opened and closed. A device is provided including a diaphragm for housing an object to be processed, and a fluid introducing passage to the vessel provided so that a greater part of a fluid flowing into the vessel flows into the diaphragm. The diaphragm can be formed of heat insulating material, and a filter can be provided for removing particles installed on the side of the diaphragm into which a fluid flows. A plate having a labyrinth construction can be provided for trapping particles by parts on a surface thereof. A pressure processing device in which an object may be washed is also provided.
    • 一种压力处理装置,包括具有主体和开闭部件的容器。 密封构件设置在主体和打开/关闭构件之间的接合表面上,并且设置非滑动接合表面,其在构件打开和关闭时不能够滑动。 提供了一种装置,其包括用于容纳被处理物体的隔膜,以及设置为使得流入容器的大部分流体流入隔膜的容器的流体引入通道。 隔膜可以由绝热材料形成,并且可以设置用于去除安装在流体流入的隔膜侧的颗粒的过滤器。 可以提供具有迷宫结构的板,用于通过其表面上的部分捕获颗粒。 还提供了可以清洗物体的压力处理装置。
    • 2. 发明授权
    • Apparatus for preparing compound single crystals
    • 复合单晶制备装置
    • US5685907A
    • 1997-11-11
    • US586825
    • 1996-01-31
    • Takao FujikawaKatsuhiro UeharaYoshihiko SakashitaKazuya SuzukiHiroshi OkadaTakao KawanakaSeiichiro Ohmoto
    • Takao FujikawaKatsuhiro UeharaYoshihiko SakashitaKazuya SuzukiHiroshi OkadaTakao KawanakaSeiichiro Ohmoto
    • C30B11/00C30B35/00
    • C30B11/00C30B29/48Y10T117/102
    • A method and apparatus for the preparation of single crystals of group II-VI compounds such as ZnSe and CdTe and group III-V compounds such as InP and GaP or of ternary compounds thereof, from which some of their components are likely to be dissociated and evaporated during crystal growth at high temperatures. Single crystals are prepared which enable the preparation of high quality compound single crystals and prevent the contamination of furnace structures. The method includes melting a source material in a container by heating in a furnace body and solidifying the melt by cooling from the bottom to grow a single crystal. The container is enclosed by an airtight chamber communicating to the outside with a pressure equalizing passage. Heating is performed while the passage is held at a low temperature equal to or lower than the melting point of a high-dissociation-pressure component of the source material. The apparatus includes a container for holding the source material, a hermetical furnace body including a heater to heat the container, an airtight chamber inside the heater which encloses the container and a pressure equalizing passage communicating with the airtight chamber and forming a lower portion of the chamber.
    • PCT No.PCT / JP95 / 01069 Sec。 371日期1996年1月31日 102(e)日期1996年1月31日PCT归档1995年6月1日PCT公布。 WO95 / 33873 PCT出版物 日期:1995年12月14日一种用于制备诸如ZnSe和CdTe的II-VI族化合物的单晶和InP和GaP的III-V族化合物或其三元化合物的方法和装置,其一些组分为 在高温下晶体生长期间可能会被解离和蒸发。 制备单晶,其可制备高质量的复合单晶并防止炉结构的污染。 该方法包括通过在炉体中加热熔化容器中的源材料并通过从底部冷却来固化熔体以生长单晶。 容器由与压力平衡通道连通的气密室封闭。 当通道保持在等于或低于源材料的高解离压分量的熔点的低温时进行加热。 该装置包括用于保持源材料的容器,包括用于加热容器的加热器的密封炉体,包围容器的加热器内的气密室和与气密室连通的压力平衡通道,并形成 房间。
    • 3. 发明授权
    • Vertical furnace for the growth of single crystals
    • 立式炉用于生长单晶
    • US5698029A
    • 1997-12-16
    • US659013
    • 1996-06-04
    • Takao FujikawaKatsuhiro UeharaYoshihiko SakashitaHiroshi OkadaTakao Kawanaka
    • Takao FujikawaKatsuhiro UeharaYoshihiko SakashitaHiroshi OkadaTakao Kawanaka
    • C30B11/00C30B35/00
    • C30B11/003C30B11/002C30B29/40Y10T117/10Y10T117/1016
    • A high-pressure container 1 as a furnace casing is equipped with insulating cylinder 2 of an inverted glass shape, and heater elements 18 individually mounted on heater mounting plates 16 arranged in parallel to section vertically the space for arranging the heater elements 18 at a given interval in the insulating cylinder 2. For the procedures of single crystal growth by heating in a high-pressure gas atmosphere, the insulating cylinder 2 and the heater mounting plates 16 can suppress the effects of spontaneous convection of a high-pressure gas and the effects of the radiation heat from an adjacent heater element, as less as possible, so that the temperature controllability of each heating zone can be improved whereby the vertical temperature distribution in the furnace can be controlled appropriately. Also, a heater element 18 of a larger aperture size can be maintained at a stably supported state, whereby a single crystal of a larger dimension can be grown.
    • 作为炉壳的高压容器1配备有倒置玻璃形状的绝缘筒体2和加热器元件18,其单独地安装在加热器安装板16上,该加热器安装板16垂直地布置在用于将加热器元件18布置在给定的空间 绝缘筒2的间隔。对于通过在高压气体气氛中加热而实现单晶生长的步骤,绝缘筒2和加热器安装板16可以抑制高压气体的自发对流的效果和效果 的相邻加热器元件的辐射热量越少越好,从而可以提高每个加热区域的温度可控性,从而可以适当地控制炉内的垂直温度分布。 此外,可以将较大孔径的加热器元件18保持在稳定的支撑状态,从而可以生长更大尺寸的单晶。
    • 4. 发明授权
    • Method for growing single crystal
    • 生长单晶的方法
    • US5679151A
    • 1997-10-21
    • US604663
    • 1996-02-21
    • Seiichiro OhmotoKatsuhiro UeharaHiroshi OkadaYoshihiko SakashitaTakao Kawanaka
    • Seiichiro OhmotoKatsuhiro UeharaHiroshi OkadaYoshihiko SakashitaTakao Kawanaka
    • C30B11/00C30B15/00C30B11/12
    • C30B11/00C30B15/00C30B29/48Y10T117/1016Y10T117/1024
    • Method of forming a single crystal of ZnSe. A charge of material is loaded in a container. The charge of material is melted to create a melt of material. A single crystal is grown from the melt of material. Then, the grown crystal is brought out of contact with the wall surface of the container. The temperature of the crystal is varied across its phase transition temperature range while establishing a temperature gradient from one end of the grown crystal to the other end. This method is carried out, using a crystal grower comprising the container and an elevation member. The container is disposed inside a high-pressure vessel. The container tapers off downward and is provided with a hole extending from its lower end. The elevation member is inserted into the hole from below to push the grown crystal in a crucible upward. The container is composed of plural separable parts. After the growth of the crystal, the assembled parts are moved substantially horizontally outwardly so that the parts are separated from each other.
    • 形成ZnSe单晶的方法。 物料装入容器中。 材料的充电被熔化以产生材料熔体。 从材料的熔体中生长单晶。 然后,将生长的晶体与容器的壁表面脱离接触。 晶体的温度在其相变温度范围内变化,同时建立从生长晶体的一端到另一端的温度梯度。 使用包括容器和升降构件的结晶器进行该方法。 容器设置在高压容器内。 容器向下逐渐变细并且设有从其下端延伸的孔。 升降构件从下方插入孔中,将生长的晶体向上推入坩埚中。 容器由多个可分离部分组成。 在晶体生长之后,组装的部件基本上水平地向外移动,使得部件彼此分离。
    • 6. 发明授权
    • Method for purifying chlorosilanes
    • 氯硅烷净化方法
    • US09193597B2
    • 2015-11-24
    • US13386926
    • 2010-07-07
    • Naoki NagaiTakaaki ShimizuKatsuhiro UeharaTohru Kubota
    • Naoki NagaiTakaaki ShimizuKatsuhiro UeharaTohru Kubota
    • C01B33/107
    • C01B33/10778
    • The present invention provides a method for obtaining high purity chlorosilanes from chlorosilanes containing boron impurities and phosphorus impurities. On the basis of the finding that solid by-product formation in the purification of chlorosilanes by adding an aromatic aldehyde results from a catalytic reaction by iron ions or rust-like iron, a Lewis base having a masking effect is added to chlorosilanes. Examples of the Lewis base include a divalent sulfur-containing compound and an alkoxysilane. The divalent sulfur-containing compound is preferably a compound represented by the formula: R—S—R′ (wherein R is a hydrocarbon group or a carbonyl group; and the sum of the carbon atoms in R and R′ is 7 or more), and the alkoxysilane is preferably a compound represented by the formula: RxSi(OR′)4-x (wherein R and R′ are each an alkyl group having 1 to 20 carbon atoms).
    • 本发明提供从含有硼杂质和磷杂质的氯硅烷中获得高纯度氯硅烷的方法。 基于通过添加芳族醛的氯硅烷纯化产生固体副产物的结果是由铁离子或铁锈铁的催化反应产生的,将具有掩蔽效应的路易斯碱加入到氯硅烷中。 路易碱碱的实例包括二价含硫化合物和烷氧基硅烷。 二价含硫化合物优选为由下式表示的化合物:R-S-R'(其中R为烃基或羰基; R和R'中的碳原子总数为7以上) 烷氧基硅烷优选为下式所示的化合物:RxSi(OR')4-x(式中,R和R'分别为碳原子数为1〜20的烷基)。
    • 8. 发明授权
    • Electric power generating device
    • 发电装置
    • US07405491B2
    • 2008-07-29
    • US11456429
    • 2006-07-10
    • Masaki MatsukumaYasuo FukushimaToshikazu MiyajiKatsuhiro Uehara
    • Masaki MatsukumaYasuo FukushimaToshikazu MiyajiKatsuhiro Uehara
    • F01D15/10
    • H02K9/19F01D15/10F01K13/006F05D2220/31F05D2220/7642H02K7/1823H02K11/046
    • There is provided an electric power generating device which includes a generator which is constituted by an interior permanent magnet (IPM) synchronous generator, and is connected to a steam turbine without interposition of a reduction gear, cooling means which flows a liquid coolant used to cool the generator, and a frequency converter which converts an electric power generated by the generator into an electric power at a commercial frequency, and outputs the converted electric power, the cooling means includes a circulation passage to which a tank which is used to store the liquid coolant (oil), a cooler which cools the liquid coolant, and a pump which pressure-feeds the liquid coolant are connected, and through which the liquid coolant circulates, and this configuration enables the generator to operate at a high rotational speed, thereby efficiently utilizing the steam energy.
    • 提供了一种发电装置,其包括由内部永磁体(IPM)同步发电机构成的发电机,并且连接到蒸汽轮机而不插入减速齿轮;冷却装置,其流过用于冷却的液体冷却剂 发电机和将发电机产生的电力以商业频率转换为电力的变频器,并输出转换后的电力,冷却装置包括循环通道,用于储存液体的罐 冷却液(油),冷却液体冷却剂的冷却器和压力供给液体冷却剂的泵连接,液体冷却剂通过其流动,这种结构使得发电机能够以高转速工作,从而有效地 利用蒸汽能量。