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    • 1. 发明授权
    • Compound and silver halide photographic material containing the same
    • 含有相同的化合物和卤化银照相材料
    • US06365335B1
    • 2002-04-02
    • US09373584
    • 1999-08-13
    • Takanori HiokiKiyoshi Morimoto
    • Takanori HiokiKiyoshi Morimoto
    • G03C112
    • G03C1/14G03C1/0051G03C1/127G03C1/16G03C1/18G03C1/22G03C1/26G03C2001/0055
    • A Silver halide photographic material high in sensitivity and decreased in residual color is disclosed, which comprises at least one compound represented by the following formula (I): wherein Z1 represents an oxygen atom, a sulfur atom, a selenium atom, a tellurium atom, a carbon atom or a nitrogen atom; Q represents a group necessary for forming a methine dye; M1 represents a charge equilibrium counter ion; m1 represents the number necessary for neutralizing a charge of the molecule; Vp represents a group having a log P value lower than that of Cl; q1 represents 1, 2, 3 or 4; and R1 is represented by following: R1=(La)k1CONHSO2R11, R1=(Lb)k2SO2NHCOR12, R1=(Lc)k3CONHCOR13, R1=(Ld)k4SO2NHSO2R14 wherein R11, R12, R13 and R14 each represents an alkyl group, an aryl group, a heterocyclic group, an alkoxyl group, an aryloxy group, a heterocyclyloxy group or an amino group; La, Lb, Lc and Ld each represents a methylene group; and k1, k2, k3 a nd k4 each represents an integer of 1 to 18.
    • 披露了高灵敏度和残留颜色降低的卤化银照相材料,其包含至少一种由下式(I)表示的化合物:其中Z1表示氧原子,硫原子,硒原子,碲原子, 碳原子或氮原子; Q表示形成次甲基染料所需的基团; M1表示电荷平衡反离子; m1表示中和分子的电荷所需的数目; Vp表示log P值低于Cl的基团; q1表示1,2,3或4; 并且R1表示如下:R1 =(La)k1CONHSO2R11,R1 =(Lb)k2SO2NHCOR12,R1 =(Lc)k3CONHCOR13,R1 =(Ld)k4SO2NHSO2R14其中R11,R12,R13和R14各自表示烷基, 杂环基,烷氧基,芳氧基,杂环氧基或氨基; La,Lb,Lc和Ld各自表示亚甲基; k1,k2,k3,...,k4分别表示1〜18的整数。
    • 2. 发明授权
    • Silver halide photographic emulsion comprising methine compound and silver halide photographic material
    • 包含次甲基化合物和卤化银照相材料的卤化银照相乳剂
    • US06582895B2
    • 2003-06-24
    • US09773689
    • 2001-02-02
    • Naoyuki HanakiTakanori HiokiKiyoshi Morimoto
    • Naoyuki HanakiTakanori HiokiKiyoshi Morimoto
    • G03C1005
    • G03C1/005G03C1/10G03C1/14G03C1/16
    • A silver halide photographic emulsion which comprises at least one methine compound represented by the following formula (I): wherein X1 and X2 each represents an oxygen atom, a sulfur atom, a selenium atom, or N—R3, wherein R3 represents a hydrogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, or a heterocyclic group; V1 and V2 each represents a monovalent substituent; n1 and n2 each represents 0, 1, 2, 3 or 4; L1, L2 and L3 each represents a methine group; l represents an integer of 0 to 3; M represents a counter ion for balancing electric charge; m represents a necessary number for balancing electric charge; and R1 and R2 each represents a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group or a substituted or unsubstituted heterocyclic group, but at least either R1 or R2 represents the alkyl group represented by any of the following formulae: Ra=(Qa)rCO{overscore (N)}SO2Raa Rb=(Qb)sSO2{overscore (N)}CORbb Rc=(Qc)tCO{overscore (N)}CORcc Rd=(Qd)uSO2{overscore (N)}SO2Rdd Re=(Qe)vX wherein Raa, Rbb, Rcc and Rdd each represents an alkyl group, an aryl group, a heterocyclic group, an alkoxyl group, an aryloxy group, a heterocyclyloxy group, or an amino group; Qa, Qb, Qc, Qd and Qe each represents a divalent linking group; X represents SO3−, CO2−, or PO32−; and r, s, t, u and v each represents an integer of 1 or more, but when X represents SO3−, v represents 1 or 2.
    • 一种卤化银照相乳剂,其包含由下式(I)表示的至少一种次甲基化合物:其中X 1和X 2各自表示氧原子,硫原子,硒原子或N-R 3,其中R 3表示氢原子 取代或未取代的烷基,取代或未取代的芳基或杂环基; V1和V2各自表示一价取代基; n1和n2各自表示0,1,2,3或4; L1,L2和L3各自表示次甲基; l表示0〜3的整数, M表示用于平衡电荷的抗衡离子; m表示用于平衡电荷的必要数量; 并且R 1和R 2各自表示取代或未取代的烷基,取代或未取代的芳基或取代或未取代的杂环基,但R 1或R 2中的至少一个表示由下式表示的烷基:其中Raa,Rbb Rcc和Rdd各自表示烷基,芳基,杂环基,烷氧基,芳氧基,杂环氧基或氨基; Qa,Qb,Qc,Qd和Qe各自表示二价连接基团; X代表SO3-,CO2-或PO32-; 并且r,s,t,u和v各自表示1以上的整数,但当X表示SO 3 - 时,v表示1或2。
    • 3. 发明授权
    • Water-based ink composition for inkjet recording
    • 用于喷墨记录的水性油墨组合物
    • US08222326B2
    • 2012-07-17
    • US12535702
    • 2009-08-05
    • Kiyoshi MorimotoKeiichi Tateishi
    • Kiyoshi MorimotoKeiichi Tateishi
    • C09D11/10
    • C09B29/0025C09B29/3656C09B33/12C09B33/24C09B67/0084C09D11/322C09D11/326
    • The invention provides a water-based ink composition for inkjet recording which contains vinyl polymer particles containing a styrene-acrylic acid copolymer in which the total content of the constitutional units derived from styrene monomer, acrylic acid, and methacrylic acid is 45% by mass or more; and at least one of an azo pigment represented by Formula (1), a tautomer thereof, a salt or hydrate thereof; and a water-based liquid medium, and which is excellent in discharge stability after a long-term storage or after aging at high temperatures: wherein, Q represents a heterocyclic group; W represents an alkoxy group, an amino group etc.; X1 and X2 each independently represent a hydrogen atom, an alkyl group etc.; R1 represents a hydrogen atom or a substituent; R2 represents a heterocyclic group; and n represents an integer of 1 to 4.
    • 本发明提供了一种喷墨记录用水性油墨组合物,其含有含有苯乙烯 - 丙烯酸共聚物的乙烯基聚合物颗粒,其中衍生自苯乙烯单体,丙烯酸和甲基丙烯酸的结构单元的总含量为45质量% 更多; 和由式(1)表示的偶氮颜料,其互变异构体,其盐或水合物中的至少一种; 水性液体介质,长期保存后或高温老化后的放电稳定性优异:其中,Q表示杂环基; W表示烷氧基,氨基等; X1和X2各自独立地表示氢原子,烷基等。 R1表示氢原子或取代基; R2表示杂环基; n表示1〜4的整数。
    • 6. 发明授权
    • Non-volatile memory
    • 非易失性存储器
    • US07291857B2
    • 2007-11-06
    • US10967222
    • 2004-10-19
    • Hideyuki TanakaTakashi OhtsukaKiyoyuki MoritaKiyoshi Morimoto
    • Hideyuki TanakaTakashi OhtsukaKiyoyuki MoritaKiyoshi Morimoto
    • H01L47/00
    • H01L27/2463H01L45/06H01L45/1233H01L45/1273H01L45/144H01L45/16H01L45/1625
    • A non-volatile memory (1) which comprises an insulating substrate (11) having a plurality of first electrodes (15) extending therethrough from a front surface of the substrate to a rear surface thereof, a second electrode (12) formed on one surface side of the substrate (11), and a recording layer (14) held between the first electrodes (15) and the second electrode (12) and variable in resistance value by electric pulses applied across the first electrodes (15) and the second electrode (12), the plurality of first electrodes (15) being electrically connected to the recording layer (14) in a region constituting a single memory cell (MC). The non-volatile memory (1) can be reduced in power consumption and has great freedom of design and high reliability.
    • 一种非易失性存储器(1),其包括绝缘基板(11),所述绝缘基板具有从所述基板的前表面延伸穿过其延伸到其后表面的多个第一电极(15),形成在一个表面上的第二电极 基板(11)的一侧,以及保持在第一电极(15)和第二电极(12)之间的记录层(14),并且通过施加在第一电极(15)和第二电极 (12),所述多个第一电极(15)在构成单个存储单元(MC)的区域中与记录层(14)电连接。 非易失性存储器(1)可以降低功耗,并具有很大的设计自由度和高可靠性。
    • 8. 发明授权
    • Voltage generating circuit, voltage generating device and semiconductor device using the same, and driving method thereof
    • 电压产生电路,电压产生装置和使用该电压产生装置的半导体装置及其驱动方法
    • US07053693B2
    • 2006-05-30
    • US10765175
    • 2004-01-28
    • Kenji ToyodaMichihito UedaKiyoshi MorimotoKiyoyuki Morita
    • Kenji ToyodaMichihito UedaKiyoshi MorimotoKiyoyuki Morita
    • G05F1/10
    • G11C11/4087G11C11/22G11C11/4074
    • A voltage generating circuit comprising a capacitor (4), a ferroelectric capacitor (6) serially connected to the capacitor (4), an output terminal (11), a capacitor (10) which grounds the output terminal (11), a supply voltage supplying terminal (13), a switch (1) which connects the supply voltage supplying terminal (13) and the connecting node (N1) of the two capacitors (4, 6), and a switch (9) which connects the connecting node (N1) and output terminal (11); wherein during a first period, with the two switches (1) and (9) placed in the OFF state, a terminal (3) is grounded and a terminal (7) is provided with a supply voltage; wherein during a second period, the terminal (3) is provided with the supply voltage and the switch (9) is placed in the ON state; wherein during a third period, the switch (9) is placed in the OFF state, the switch (1) is placed in the ON state, and the terminal (7) is grounded; wherein during a fourth period, the terminal (7) is provided with the supply voltage; and wherein thereafter the first through fourth periods are repeated.
    • 一种电压产生电路,包括电容器(4),串联连接到电容器(4)的铁电电容器(6),输出端子(11),接地输出端子(11)的电容器(10) 供给端子(13),连接电源电压端子(13)和两个电容器(4,6)的连接节点(N1)的开关(1)和连接节点 (N 1)和输出端子(11); 其中在第一时段期间,当两个开关(1)和(9)处于断开状态时,端子(3)接地,端子(7)被提供有电源电压; 其中在第二时段期间,端子(3)设置有电源电压,开关(9)置于ON状态; 其中,在第三时段期间,开关(9)处于断开状态,开关(1)置于导通状态,端子(7)接地; 其中在第四时段期间,所述端子(7)被提供有电源电压; 此后重复第一至第四周期。
    • 9. 发明授权
    • Non-volatile latch circuit and a driving method thereof
    • 非易失性锁存电路及其驱动方法
    • US06845032B2
    • 2005-01-18
    • US10785031
    • 2004-02-25
    • Kenji ToyodaTakashi OhtsukaKiyoshi Morimoto
    • Kenji ToyodaTakashi OhtsukaKiyoshi Morimoto
    • G11C11/22H01L21/8246H01L27/105H03K3/356H03K17/693H03K19/0948H03K19/185
    • G11C11/22H03K17/693
    • Non-volatile latch circuit 10 of the present invention comprises ferroelectric capacitor 1 provided with a first electrode 1a, second electrode 1b, and ferroelectric film 1c that lies between these electrodes; reset terminal Tre that is connected to first electrode 1a and a CMOS inverter element 2 that is connected to second electrode 1b of ferroelectric capacitor 1; voltage switching terminal Tpl that applies a voltage to second electrode 1b; switching element 5 that is connected between second electrode 1b and second input terminal Tpl and switches a voltage applied to second electrode 1b; and set terminal Tse that applies a voltage for switching on or off switching element 5, wherein the voltage generated in second electrode 1b caused by polarization retained by ferroelectric film 1c is higher than the threshold voltage Vtn of NMISFET 4 of CMOS inverter element 2.
    • 本发明的非易失性锁存电路10包括设置有位于这些电极之间的第一电极1a,第二电极1b和铁电体膜1c的铁电电容器1; 连接到第一电极1a的复位端子Tre和连接到铁电电容器1的第二电极1b的CMOS反相器元件2; 向第二电极1b施加电压的电压切换端子Tpl; 开关元件5,其连接在第二电极1b和第二输入端子Tpl之间,并切换施加到第二电极1b的电压; 并设置施加用于接通或关断开关元件5的电压的端子Tse,其中由铁电体膜1c保持的极化所引起的第二电极1b中产生的电压高于CMOS反相器元件2的NMISFET 4的阈值电压Vtn。
    • 10. 发明授权
    • Potential generating circuit, potential generating device and semiconductor device using the same, and driving method thereof
    • 电位发生电路,电位产生装置及使用其的半导体装置及其驱动方法
    • US06809953B2
    • 2004-10-26
    • US10440277
    • 2003-05-16
    • Kenji ToyodaMichihito UedaKiyoshi MorimotoKiyoyuki MoritaToru IwataJun Kajiwara
    • Kenji ToyodaMichihito UedaKiyoshi MorimotoKiyoyuki MoritaToru IwataJun Kajiwara
    • G11C1122
    • H02M3/07H02M3/073
    • A potential generating circuit comprises a capacitor (4); a ferroelectric capacitor (6) connected in series to the capacitor (4); an output terminal (11); a capacitor (10) for grounding the output terminal (11); a switch (9) for connecting a connecting node (5) between the two capacitors (4, 6) to the output terminal (11); and a switch (1) for connecting the connecting node (5) to the ground; wherein during a first period, with the switches (1) and (9) placed in the OFF state, a terminal (3) is provided with a positive potential and a terminal (7) is grounded; wherein during a second period following the first period, the terminal (3) is grounded and the switch (9) is placed in the ON state; wherein during a third period following the second period, the switch (9) is placed in the OFF state, the switch (1) is placed in the ON state, and the terminal (7) is provided with a positive potential; wherein during a fourth period following the third period, the terminal (7) is grounded; and wherein the first through fourth periods are repeated.
    • 电位发生电路包括电容器(4); 与电容器(4)串联连接的铁电电容器(6)。 输出端子(11); 用于使输出端子(11)接地的电容器(10); 用于将两个电容器(4,6)之间的连接节点(5)连接到输出端子(11)的开关(9); 和用于将连接节点(5)连接到地面的开关(1); 其中在第一时段期间,当开关(1)和(9)处于断开状态时,端子(3)被提供有正电位并且端子(7)接地; 其中在所述第一周期之后的第二时段期间,所述端子(3)接地,并且所述开关(9)处于接通状态; 其中在所述第二时段之后的第三时段期间,所述开关(9)处于断开状态,所述开关(1)处于接通状态,并且所述端子(7)被提供有正电位; 其中在所述第三周期之后的第四周期期间,所述终端(7)接地; 并且其中重复第一至第四周期。