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1. 发明授权

US5744824A Semiconductor device method for producing the same and liquid crystal display including the same 失效
标题翻译：其制造用半导体装置及其制造方法
公开(公告)号：US5744824A
公开(公告)日：1998-04-28
申请号：US863272
申请日：1997-05-27
申请人： Takamasa Kousai , Naoki Makita , Toru Takayama
发明人： Takamasa Kousai , Naoki Makita , Toru Takayama
IPC分类号： G02F1/1345 , G02F1/136 , G02F1/1368 , G09G3/18 , G09G3/36 , H01L21/336 , H01L21/8232 , H01L27/085 , H01L27/12 , H01L29/786 , H01L51/50 , H01L29/04 , H01L29/12 , H01L31/036
CPC分类号： H01L27/12 , H01L29/78621
摘要： A liquid crystal display device including: a display section including a liquid crystal layer; a pair of substrates interposing the liquid crystal layer; a plurality of pixel electrodes located in a matrix on one of the pair of substrates; a plurality of first thin film transistors respectively connected to the plurality of pixel electrodes; and a peripheral driving circuit located for driving the display section, the peripheral driving circuit being located on the substrate on which the first thin film transistors are located and having a second thin film transistor. Each of the first thin film transistors includes a first channel layer formed of a first crystalline silicon layer, and the second thin film transistor includes a second channel layer formed of a second crystalline silicon layer having a higher mobility than the mobility of the first crystalline silicon layer. The second crystalline silicon layer includes a catalytic element for promoting crystallization.
摘要翻译：一种液晶显示装置，包括：显示部，包括液晶层; 插入液晶层的一对基板; 位于所述一对基板中的一个基板上的矩阵中的多个像素电极; 分别连接到所述多个像素电极的多个第一薄膜晶体管; 以及用于驱动显示部分的外围驱动电路，外围驱动电路位于其上位于第一薄膜晶体管的基板上并具有第二薄膜晶体管。每个第一薄膜晶体管包括由第一晶体硅层形成的第一沟道层，并且第二薄膜晶体管包括由具有比第一晶体硅的迁移率高的迁移率的第二晶体硅层形成的第二沟道层层。第二晶体硅层包括促进结晶的催化元素。

2. 发明授权

US5970327A Method of fabricating a thin film transistor 失效
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US5970327A
公开(公告)日：1999-10-19
申请号：US975446
申请日：1997-11-21
申请人： Naoki Makita , Takashi Funai , Toru Takayama
发明人： Naoki Makita , Takashi Funai , Toru Takayama
IPC分类号： C23C16/24 , H01L21/02 , H01L21/20 , H01L21/335 , H01L21/336 , H01L27/12 , H01L29/78 , H01L29/786
CPC分类号： H01L21/2022 , H01L29/66757 , H01L21/2026
摘要： A semiconductor device comprising a substrate having thereon an amorphous silicon film fabricated by a reduced pressure chemical vapor deposition, characterized in that a thin film transistor is provided by using a crystalline silicon film obtained by effecting crystal growth in parallel with the surface of the substrate at the periphery of a region containing a selectively introduced metallic element, the region being obtained by selectively introducing a metallic element capable of accelerating the crystallization of the amorphous silicon film and heating the region thereafter.
摘要翻译：一种半导体器件，包括其上具有通过减压化学气相沉积制造的非晶硅膜的衬底，其特征在于，通过使用通过与衬底的表面平行地实现晶体生长获得的晶体硅膜来提供薄膜晶体管，包含选择性引入的金属元素的区域的周边，该区域通过选择性地引入能够加速非晶硅膜的结晶的金属元素并且之后加热该区域而获得。

3. 发明授权

US5811327A Method and an apparatus for fabricating a semiconductor device 失效
标题翻译：用于制造半导体器件的方法和装置
公开(公告)号：US5811327A
公开(公告)日：1998-09-22
申请号：US407609
申请日：1995-03-21
申请人： Takashi Funai , Naoki Makita , Toru Takayama
发明人： Takashi Funai , Naoki Makita , Toru Takayama
IPC分类号： G02F1/136 , C30B13/22 , G02F1/1368 , H01L21/20 , H01L21/00 , H01L21/336
CPC分类号： C30B13/22 , H01L21/2022 , H01L21/2026
摘要： In a substrate having an insulating surface in which an amorphous semiconductor film is deposited on the insulating surface, a predetermined under-heating portion of the amorphous semiconductor film is partially heated with a heating source emitting heating rays. While heating, the under-heating portion is shifted by moving the heating source or the substrate. Accordingly, the amorphous semiconductor film is sequentially heat-treated and polycrystallized. As the under-heating portion shifts, the polycrystallization sequentially proceeds using the already polycrystallized portion by irradiation with the heating rays, which is adjacent to the under-heating portion, as seed crystal. Thus, the growth condition of crystal grains is uniformly controlled in the shifting direction of the under-heating portion.
摘要翻译：在绝缘表面上沉积非晶半导体膜的衬底中，非晶半导体膜的预定的欠热部分用发出加热射线的加热源部分加热。在加热的同时，通过移动加热源或基板来移动欠热部分。因此，非晶半导体膜依次热处理和多晶化。当加热不足部分移动时，通过用与下加热部分相邻的加热线照射作为晶种，使用已经多晶结构的部分依次进行多晶化。因此，在欠热部分的移动方向上均匀地控制晶粒的生长条件。

4. 发明授权

US09777352B2 Oil-well steel pipe having excellent sulfide stress cracking resistance 有权
公开(公告)号：US09777352B2
公开(公告)日：2017-10-03
申请号：US14239829
申请日：2012-08-17
申请人： Atsushi Soma , Tomohiko Omura , Yuji Arai , Mitsuhiro Numata , Toru Takayama , Masanao Seo
发明人： Atsushi Soma , Tomohiko Omura , Yuji Arai , Mitsuhiro Numata , Toru Takayama , Masanao Seo
IPC分类号： C22C38/32 , C22C38/00 , C22C38/28 , C22C38/02 , C22C38/04 , C22C38/06 , C22C38/22 , C22C38/24 , C22C38/26 , C21D8/10 , C21D9/08 , C21D9/00
CPC分类号： C22C38/32 , C21D8/105 , C21D9/00 , C21D9/08 , C21D9/085 , C22C38/00 , C22C38/001 , C22C38/002 , C22C38/02 , C22C38/04 , C22C38/06 , C22C38/22 , C22C38/24 , C22C38/26 , C22C38/28 , Y02P10/212
摘要： To provide an oil-well steel pipe having excellent SSC resistance. The oil-well steel pipe according to the present invention contains, by mass percent, C: 0.15 to 0.35%, Si: 0.1 to 0.75%, Mn: 0.1 to 1.0%, Cr: 0.1 to 1.7%, Mo: 0.1 to 1.2%, Ti: 0.01 to 0.05%, Nb: 0.010 to 0.030%, Al: 0.01 to 0.1%, P: at most 0.03%, S: at most 0.01%, N: at most 0.007%, and O: at most 0.01%, the balance being Fe and impurities. The Ti content and the Nb content in a residue obtained by bromine-methanol extraction satisfy equation (1): 100×[Nb]/([Ti]+[Nb])≦27.5 (1) where the Ti content (mass %) and the Nb content (mass %) in the residue are substituted for [Ti] and [Nb].

5. 发明授权

US09175371B2 Steel for steel tube with excellent sulfide stress cracking resistance 有权
标题翻译：钢管用于钢管，具有优良的耐硫化物应力开裂性能
公开(公告)号：US09175371B2
公开(公告)日：2015-11-03
申请号：US13702763
申请日：2011-05-25
申请人： Mitsuhiro Numata , Tomohiko Omura , Masayuki Morimoto , Toru Takayama , Atsushi Soma
发明人： Mitsuhiro Numata , Tomohiko Omura , Masayuki Morimoto , Toru Takayama , Atsushi Soma
IPC分类号： C22C38/28 , C22C38/22 , C22C38/32 , C22C38/00 , C22C38/02 , C22C38/04 , C22C38/06 , C22C38/24 , C22C38/26 , C21D8/02
CPC分类号： C22C38/32 , C21D8/0247 , C22C38/001 , C22C38/002 , C22C38/02 , C22C38/04 , C22C38/06 , C22C38/22 , C22C38/24 , C22C38/26 , C22C38/28
摘要： The present invention provides a steel which simultaneously satisfies a plurality of characteristics, specifically, a steel for tubes with excellent sulfide stress cracking resistance, including, C: 0.2 to 0.7%; Si: 0.01 to 0.8%; Mn: 0.1 to 1.5%; S: not more than 0.005%; P: not more than 0.03%; Al: 0.0005 to 0.1%; Ti: 0.005 to 0.05%; Ca: 0.0004 to 0.005%; N: not more than 0.007%; Cr: 0.1 to 1.5%; and Mo: 0.2 to 1.0%; the balance being Fe, Mg and impurities, being characterized in that: the content of Mg is not less than 1.0 ppm and not more than 5.0 ppm; and inclusions of not less than 50% of the total number of those in steel have such a morphology that Mg—Al—O-based oxides exist at the central part of the inclusion, Ca—Al-based oxides enclose the Mg—Al—O-based oxides, and Ti-containing-carbonitrides further exist on a periphery of the Ca—Al-based oxides.
摘要翻译：本发明提供一种同时满足多种特性的钢，具体地说，具有优异的耐硫化物应力开裂性的钢，其包括C：0.2〜0.7％， Si：0.01〜0.8％ Mn：0.1〜1.5％ S：不超过0.005％; P：不大于0.03％; Al：0.0005〜0.1％ Ti：0.005〜0.05％ Ca：0.0004〜0.005％ N：不大于0.007％; Cr：0.1〜1.5％和Mo：0.2〜1.0％余量为Fe，Mg和杂质，其特征在于：Mg的含量不小于1.0ppm且不大于5.0ppm; 并且不少于钢总数的50％的夹杂物具有在夹杂物的中心部存在Mg-Al-O系氧化物的形态，Ca-Al系氧化物包围Mg-Al- O型氧化物和含Ti的碳氮化物进一步存在于Ca-Al系氧化物的周围。

6. 发明授权

US08951849B2 Method for manufacturing semiconductor device including layer containing yttria-stabilized zirconia 有权
标题翻译：包含氧化钇稳定氧化锆层的半导体器件的制造方法
公开(公告)号：US08951849B2
公开(公告)日：2015-02-10
申请号：US13050002
申请日：2011-03-17
申请人： Toru Takayama , Kengo Akimoto
发明人： Toru Takayama , Kengo Akimoto
IPC分类号： H01L35/24 , H01L21/3105 , H01L21/316 , H01L21/3205 , H01L29/49 , H01L29/66 , H01L29/786 , H01L29/417
CPC分类号： H01L21/3105 , H01L21/31604 , H01L21/32055 , H01L29/41733 , H01L29/4908 , H01L29/66765 , H01L29/78696
摘要： An object is to provide a semiconductor device including a microcrystalline semiconductor film with favorable quality and a method for manufacturing the semiconductor device. In a thin film transistor formed using a microcrystalline semiconductor film, yttria-stabilized zirconia having a fluorite structure is formed in the uppermost layer of a gate insulating film in order to improve quality of a microcrystalline semiconductor film to be formed in the initial stage of deposition. The microcrystalline semiconductor film is deposited on the yttria-stabilized zirconia, so that the microcrystalline semiconductor film around an interface with a base particularly has favorable crystallinity while by crystallinity of the base.
摘要翻译：目的在于提供一种具有质量好的微晶半导体膜的半导体装置及其制造方法。在使用微晶半导体膜形成的薄膜晶体管中，在栅极绝缘膜的最上层形成具有萤石结构的氧化钇稳定的氧化锆，以提高在初始沉积时形成的微晶半导体膜的质量。微晶半导体膜沉积在氧化钇稳定的氧化锆上，使得与碱的界面周围的微晶半导体膜特别具有良好的结晶度，同时通过碱的结晶度。

7. 发明授权

US08841664B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08841664B2
公开(公告)日：2014-09-23
申请号：US13404516
申请日：2012-02-24
申请人： Hitomi Sato , Takayuki Saito , Kosei Noda , Toru Takayama
发明人： Hitomi Sato , Takayuki Saito , Kosei Noda , Toru Takayama
IPC分类号： H01L29/10 , H01L29/786 , H01L27/108 , H01L29/49 , H01L27/115
CPC分类号： H01L29/7869 , H01L27/10873 , H01L27/1156 , H01L29/4908 , H01L29/78603 , H01L29/78606
摘要： Provided is a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which a semiconductor film whose threshold voltage is difficult to control is used as an active layer. By using a silicon oxide film having a negative fixed charge as a film in contact with the active layer of the transistor or a film in the vicinity of the active layer, a negative electric field is always applied to the active layer due to the negative fixed charge and the threshold voltage of the transistor can be shifted in the positive direction. Thus, the highly reliable semiconductor device can be manufactured by giving stable electric characteristics to the transistor.
摘要翻译：提供了一种高可靠性的半导体器件，其通过对其中阈值电压难以控制的半导体膜用作有源层的晶体管给予稳定的电特性。通过使用具有负固定电荷的氧化硅膜作为与晶体管的有源层或有源层附近的膜接触的膜，由于负固定，总是向有源层施加负电场电荷和晶体管的阈值电压可以向正方向移动。因此，可以通过给晶体管提供稳定的电特性来制造高度可靠的半导体器件。

8. 发明授权

US08674493B2 IC card and booking-account system using the IC card 有权
标题翻译： IC卡和预订账号系统使用IC卡
公开(公告)号：US08674493B2
公开(公告)日：2014-03-18
申请号：US13618384
申请日：2012-09-14
申请人： Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno , Mai Akiba
发明人： Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno , Mai Akiba
IPC分类号： H01L23/498
CPC分类号： G06K19/077 , G06K19/07703 , G06Q20/105 , G06Q20/3415 , G07F7/1008 , H01L2224/48091 , H01L2224/48465 , H01L2224/73265 , H01L2924/00011 , H01L2924/01015 , H01L2924/01047 , H01L2924/10253 , H01L2924/10271 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2924/01005 , H01L2224/45147
摘要： It is an object of the present invention to provide a highly sophisticated functional IC card that can ensure security by preventing forgery such as changing a picture of a face, and display other images as well as the picture of a face. An IC card comprising a display device and a plurality of thin film integrated circuits; wherein driving of the display device is controlled by the plurality of thin film integrated circuits; a semiconductor element used for the plurality of thin film integrated circuits and the display device is formed by using a polycrystalline semiconductor film; the plurality of thin film integrated circuits are laminated; the display device and the plurality of thin film integrated circuits are equipped for the same printed wiring board; and the IC card has a thickness of from 0.05 mm to 1 mm.
摘要翻译：本发明的目的是提供一种高度复杂的功能IC卡，其可以通过防止诸如改变脸部图像的伪造，以及显示其他图像以及脸部照片来确保安全性。一种IC卡，包括显示装置和多个薄膜集成电路; 其中所述显示装置的驱动由所述多个薄膜集成电路控制; 通过使用多晶半导体膜形成用于多个薄膜集成电路的半导体元件和显示装置; 层叠多个薄膜集成电路; 显示装置和多个薄膜集成电路被配备用于相同的印刷线路板; IC卡的厚度为0.05mm〜1mm。

9. 发明授权

US08673739B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08673739B2
公开(公告)日：2014-03-18
申请号：US13303519
申请日：2011-11-23
申请人： Toru Takayama , Yuugo Goto , Yumiko Fukumoto , Junya Maruyama , Takuya Tsurume
发明人： Toru Takayama , Yuugo Goto , Yumiko Fukumoto , Junya Maruyama , Takuya Tsurume
IPC分类号： H01L21/30
CPC分类号： H01L27/1266 , H01L27/1214 , H01L33/0079
摘要： It is an object of the invention to provide a lightweight semiconductor device having a highly reliable sealing structure which can prevent ingress of impurities such as moisture that deteriorate element characteristics, and a method of manufacturing thereof. A protective film having superior gas barrier properties (which is a protective film that is likely to damage an element if the protective film is formed on the element directly) is previously formed on a heat-resistant substrate other than a substrate with the element formed thereon. The protective film is peeled off from the heat-resistant substrate, and transferred over the substrate with the element formed thereon so as to seal the element.
摘要翻译：本发明的目的是提供一种具有高度可靠的密封结构的轻质半导体器件及其制造方法，该密封结构能够防止元素特性恶化的诸如水分等杂质的侵入。具有优异阻气性的保护膜（其是如果在元件上直接形成保护膜时可能损坏元件的保护膜）预先在其上形成有元件的基板之外的耐热基板上形成。保护膜从耐热基材上剥离，并在其上形成的元件在基板上转印以密封元件。

10. 发明授权

US08634050B2 Liquid crystal display device and method for manufacturing the same 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US08634050B2
公开(公告)日：2014-01-21
申请号：US12108614
申请日：2008-04-24
申请人： Shunpei Yamazaki , Toru Takayama
发明人： Shunpei Yamazaki , Toru Takayama
IPC分类号： G02F1/1339
CPC分类号： G02F1/1339 , G02F1/1341 , G02F2001/13415
摘要： A liquid crystal display device using a plastic substrate becomes required to have high resolution, high opening ratio, high reliability, or the like, with the increasing of a screen size. Besides, high productivity and cost reduction is also required. According to the present invention, a protective film 123 comprising at least one silicon nitride film, which is formed by a ratio frequency sputtering using a silicon target, is provided over an opposing substrate (a flexible substrate); sealant 112 is drawn; a liquid crystal material 114 is dropped over the opposing substrate in vacuo; and the opposing substrate is pasted to a flexible substrate 110 provided with a pixel electrode 111 and a columnar spacer 115.
摘要翻译：随着屏幕尺寸的增加，使用塑料基板的液晶显示装置需要具有高分辨率，高开口率，高可靠性等。此外，还需要高生产率和成本降低。根据本发明，在相对的基板（柔性基板）上设置包括通过使用硅靶的比率频率溅射形成的至少一个氮化硅膜的保护膜123。抽出密封剂112; 将液晶材料114真空滴在相对的基板上; 并且将相对的基板粘贴到设置有像素电极111和柱状间隔物115的柔性基板110上。

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