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1. 发明授权

US6143661A Method of processing semiconductor device with laser 有权
标题翻译：用激光加工半导体器件的方法
公开(公告)号：US6143661A
公开(公告)日：2000-11-07
申请号：US133330
申请日：1998-08-13
申请人： Takamasa Kousai , Hongyong Zhang , Akiharu Miyanaga
发明人： Takamasa Kousai , Hongyong Zhang , Akiharu Miyanaga
IPC分类号： H01L21/20 , H01L21/268 , H01L21/324 , H01L21/336 , H01L21/77 , H01L29/786 , H01L21/302
CPC分类号： H01L21/2026 , H01L27/1285
摘要： A method of fabricating a semiconductor device by the use of laser crystallization steps is provided. During these crystallization steps, an amorphous or polycrystalline semiconductor is crystallized by laser irradiation in such a way that generation of ridges is suppressed. Two separate laser crystallization steps are carried out. First, a laser irradiation step is performed in a vacuum, using somewhat weak laser light. Then, another laser irradiation step is performed in a vacuum, in the atmosphere, or in an oxygen ambient with intenser laser light. The first laser irradiation conducted in a vacuum does not result in satisfactory crystallization. However, this irradiation can suppress generation of ridges. The second laser irradiation step is performed in a vacuum, in the atmosphere, or in an oxygen ambient to achieve sufficient crystallization, but no ridges are produced.
摘要翻译：提供了通过使用激光晶化步骤制造半导体器件的方法。在这些结晶步骤中，通过激光照射使非晶或多晶半导体结晶化，从而抑制隆起的产生。进行两个单独的激光结晶步骤。首先，使用稍微弱的激光在真空中进行激光照射步骤。然后，在真空中，大气中，或在氧气环境下，用较强的激光进行另一激光照射步骤。在真空中进行的第一次激光照射不能令人满意的结晶。然而，这种照射可以抑制隆起的产生。第二激光照射步骤在真空中，大气中或在氧气氛中进行以实现足够的结晶，但不产生脊。

2. 发明授权

US6162667A Method for fabricating thin film transistors 失效
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US6162667A
公开(公告)日：2000-12-19
申请号：US408869
申请日：1995-03-23
申请人： Takashi Funai , Naoki Makita , Yoshitaka Yamamoto , Tadayoshi Miyamoto , Takamasa Kousai , Masashi Maekawa
发明人： Takashi Funai , Naoki Makita , Yoshitaka Yamamoto , Tadayoshi Miyamoto , Takamasa Kousai , Masashi Maekawa
IPC分类号： H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L21/00
CPC分类号： H01L27/12 , H01L27/1277 , H01L29/66757
摘要： In a fabrication of a semiconductor device, an amorphous semiconductor film is first formed on a substrate having an insulating surface. Then, a minute amount of catalyst elements for accelerating crystallization of the amorphous semiconductor film is supplied to at least a portion of a surface of the amorphous semiconductor film. A heat treatment is further conducted so that the supplied catalyst elements are diffused into the amorphous semiconductor film. Thus, the catalyst elements are introduced uniformly into the amorphous semiconductor film in a very minute amount or at a low concentration, resulting in polycrystallization of at least a portion of the amorphous semiconductor film. Utilizing the thus obtained crystalline semiconductor film on the substrate surface as an active region, a semiconductor device such as a TFT is fabricated. The introduction of the catalyst elements are conducted by various methods such as: a formation of a film containing a minute amount of the catalyst elements; application of a solution containing the catalyst elements in several spin coating cycles; diffusion of the catalyst elements through a buffer layer; dipping into a solution in which the catalyst elements are dissolved or dispersed; or formation of a plating layer containing the catalyst elements.
摘要翻译：在半导体器件的制造中，首先在具有绝缘表面的衬底上形成非晶半导体膜。然后，将少量用于加速非晶半导体膜的结晶的催化剂元素供给到非晶半导体膜的表面的至少一部分。进一步进行热处理，使得所提供的催化剂元素扩散到非晶半导体膜中。因此，催化剂元素以非常微量或低浓度均匀地引入到非晶半导体膜中，导致至少一部分非晶半导体膜的多晶化。利用由此获得的晶体半导体膜作为有源区，在衬底表面上制造诸如TFT的半导体器件。催化剂元素的引入通过各种方法进行，例如：形成含有微量催化剂元素的膜; 在几个旋涂周期中应用含有催化剂元素的溶液; 催化剂元件通过缓冲层的扩散; 浸入催化剂元素溶解或分散的溶液中; 或形成含有催化剂元素的镀层。

3. 发明授权

US5795795A Method of processing semiconductor device with laser 失效
公开(公告)号：US5795795A
公开(公告)日：1998-08-18
申请号：US462361
申请日：1995-06-05
申请人： Takamasa Kousai , Hongyong Zhang , Akiharu Miyanaga
发明人： Takamasa Kousai , Hongyong Zhang , Akiharu Miyanaga
IPC分类号： H01L21/20 , H01L21/268 , H01L21/324 , H01L21/336 , H01L21/77 , H01L29/786 , H01L21/306
CPC分类号： H01L21/2026 , H01L27/1285
摘要： A method of fabricating a semiconductor device by the use of laser crystallization steps is provided. During these crystallization steps, an amorphous or polycrystalline semiconductor is crystallized by laser irradiation in such a way that generation of ridges is suppressed. Two separate laser crystallization steps are carried out. First, a laser irradiation step is performed in a vacuum, using somewhat weak laser light. Then, another laser irradiation step is performed in a vacuum, in the atmosphere, or in an oxygen ambient with intenser laser light. The first laser irradiation conducted in a vacuum does not result in satisfactory crystallization. However, this irradiation can suppress generation of ridges. The second laser irradiation step is performed in a vacuum, in the atmosphere, or in an oxygen ambient to achieve sufficient crystallization, but no ridges are produced.

4. 发明授权

US5744824A Semiconductor device method for producing the same and liquid crystal display including the same 失效
标题翻译：其制造用半导体装置及其制造方法
公开(公告)号：US5744824A
公开(公告)日：1998-04-28
申请号：US863272
申请日：1997-05-27
申请人： Takamasa Kousai , Naoki Makita , Toru Takayama
发明人： Takamasa Kousai , Naoki Makita , Toru Takayama
IPC分类号： G02F1/1345 , G02F1/136 , G02F1/1368 , G09G3/18 , G09G3/36 , H01L21/336 , H01L21/8232 , H01L27/085 , H01L27/12 , H01L29/786 , H01L51/50 , H01L29/04 , H01L29/12 , H01L31/036
CPC分类号： H01L27/12 , H01L29/78621
摘要： A liquid crystal display device including: a display section including a liquid crystal layer; a pair of substrates interposing the liquid crystal layer; a plurality of pixel electrodes located in a matrix on one of the pair of substrates; a plurality of first thin film transistors respectively connected to the plurality of pixel electrodes; and a peripheral driving circuit located for driving the display section, the peripheral driving circuit being located on the substrate on which the first thin film transistors are located and having a second thin film transistor. Each of the first thin film transistors includes a first channel layer formed of a first crystalline silicon layer, and the second thin film transistor includes a second channel layer formed of a second crystalline silicon layer having a higher mobility than the mobility of the first crystalline silicon layer. The second crystalline silicon layer includes a catalytic element for promoting crystallization.
摘要翻译：一种液晶显示装置，包括：显示部，包括液晶层; 插入液晶层的一对基板; 位于所述一对基板中的一个基板上的矩阵中的多个像素电极; 分别连接到所述多个像素电极的多个第一薄膜晶体管; 以及用于驱动显示部分的外围驱动电路，外围驱动电路位于其上位于第一薄膜晶体管的基板上并具有第二薄膜晶体管。每个第一薄膜晶体管包括由第一晶体硅层形成的第一沟道层，并且第二薄膜晶体管包括由具有比第一晶体硅的迁移率高的迁移率的第二晶体硅层形成的第二沟道层层。第二晶体硅层包括促进结晶的催化元素。

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