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1. 发明授权

US08841664B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08841664B2
公开(公告)日：2014-09-23
申请号：US13404516
申请日：2012-02-24
申请人： Hitomi Sato , Takayuki Saito , Kosei Noda , Toru Takayama
发明人： Hitomi Sato , Takayuki Saito , Kosei Noda , Toru Takayama
IPC分类号： H01L29/10 , H01L29/786 , H01L27/108 , H01L29/49 , H01L27/115
CPC分类号： H01L29/7869 , H01L27/10873 , H01L27/1156 , H01L29/4908 , H01L29/78603 , H01L29/78606
摘要： Provided is a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which a semiconductor film whose threshold voltage is difficult to control is used as an active layer. By using a silicon oxide film having a negative fixed charge as a film in contact with the active layer of the transistor or a film in the vicinity of the active layer, a negative electric field is always applied to the active layer due to the negative fixed charge and the threshold voltage of the transistor can be shifted in the positive direction. Thus, the highly reliable semiconductor device can be manufactured by giving stable electric characteristics to the transistor.
摘要翻译：提供了一种高可靠性的半导体器件，其通过对其中阈值电压难以控制的半导体膜用作有源层的晶体管给予稳定的电特性。通过使用具有负固定电荷的氧化硅膜作为与晶体管的有源层或有源层附近的膜接触的膜，由于负固定，总是向有源层施加负电场电荷和晶体管的阈值电压可以向正方向移动。因此，可以通过给晶体管提供稳定的电特性来制造高度可靠的半导体器件。

2. 发明申请

US20120153275A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120153275A1
公开(公告)日：2012-06-21
申请号：US13316604
申请日：2011-12-12
申请人： Yuta Endo , Toshinari Sasaki , Kosei Noda , Hitomi Sato , Yuhei Sato
发明人： Yuta Endo , Toshinari Sasaki , Kosei Noda , Hitomi Sato , Yuhei Sato
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/4908 , H01L21/28088 , H01L21/288 , H01L27/1225 , H01L29/42384 , H01L29/66742 , H01L29/7869
摘要： To manufacture a transistor whose threshold voltage is controlled without using a backgate electrode, a circuit for controlling the threshold voltage, and an impurity introduction method. To manufacture a semiconductor device having favorable electrical characteristics, high reliability, and low power consumption using the transistor. A gate electrode including a tungsten oxide film whose composition is controlled is used. The composition or the like is adjusted by a film formation method of the tungsten oxide film, whereby the work function can be controlled. By using the tungsten oxide film whose work function is controlled as part of the gate electrode, the threshold of the transistor can be controlled. Using the transistor whose threshold voltage is controlled, a semiconductor device having favorable electrical characteristics, high reliability, and low power consumption can be manufactured.
摘要翻译：制造在不使用背栅电极的情况下控制阈值电压的晶体管，用于控制阈值电压的电路和杂质导入方法。使用晶体管制造具有良好的电特性，高可靠性和低功耗的半导体器件。使用包含其组成被控制的氧化钨膜的栅电极。通过氧化钨膜的成膜方法调整组合物等，由此可以控制功函数。通过使用功函数被控制为栅电极的一部分的氧化钨膜，可以控制晶体管的阈值。通过使用阈值电压被控制的晶体管，可以制造具有良好的电特性，高可靠性和低功耗的半导体器件。

3. 发明授权

US08748889B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08748889B2
公开(公告)日：2014-06-10
申请号：US13188992
申请日：2011-07-22
申请人： Toshinari Sasaki , Hitomi Sato , Kosei Noda , Yuta Endo , Mizuho Ikarashi , Keitaro Imai , Atsuo Isobe , Yutaka Okazaki
发明人： Toshinari Sasaki , Hitomi Sato , Kosei Noda , Yuta Endo , Mizuho Ikarashi , Keitaro Imai , Atsuo Isobe , Yutaka Okazaki
IPC分类号： H01L29/12 , H01L21/36
CPC分类号： H01L29/7869 , H01L29/66969 , H01L29/78603 , H01L29/78606
摘要： It is an object to manufacture a semiconductor device in which a transistor including an oxide semiconductor has normally-off characteristics, small fluctuation in electric characteristics, and high reliability. First, first heat treatment is performed on a substrate, a base insulating layer is formed over the substrate, an oxide semiconductor layer is formed over the base insulating layer, and the step of performing the first heat treatment to the step of forming the oxide semiconductor layer are performed without exposure to the air. Next, after the oxide semiconductor layer is formed, second heat treatment is performed. An insulating layer from which oxygen is released by heating is used as the base insulating layer.
摘要翻译：本发明的目的是制造其中包括氧化物半导体的晶体管具有常态特性，电特性波动小，可靠性高的半导体器件。首先，在基板上进行第一热处理，在基板上形成基极绝缘层，在基底绝缘层上形成氧化物半导体层，对形成氧化物半导体的工序进行第一热处理的工序在不暴露于空气的情况下执行层。接下来，在形成氧化物半导体层之后，进行第二热处理。使用通过加热而释放氧的绝缘层作为基底绝缘层。

4. 发明授权

US09202822B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09202822B2
公开(公告)日：2015-12-01
申请号：US13316604
申请日：2011-12-12
申请人： Yuta Endo , Toshinari Sasaki , Kosei Noda , Hitomi Sato , Yuhei Sato
发明人： Yuta Endo , Toshinari Sasaki , Kosei Noda , Hitomi Sato , Yuhei Sato
IPC分类号： H01L27/12 , H01L29/49 , H01L29/786
CPC分类号： H01L29/4908 , H01L21/28088 , H01L21/288 , H01L27/1225 , H01L29/42384 , H01L29/66742 , H01L29/7869
摘要： To manufacture a transistor whose threshold voltage is controlled without using a backgate electrode, a circuit for controlling the threshold voltage, and an impurity introduction method. To manufacture a semiconductor device having favorable electrical characteristics, high reliability, and low power consumption using the transistor. A gate electrode including a tungsten oxide film whose composition is controlled is used. The composition or the like is adjusted by a film formation method of the tungsten oxide film, whereby the work function can be controlled. By using the tungsten oxide film whose work function is controlled as part of the gate electrode, the threshold of the transistor can be controlled. Using the transistor whose threshold voltage is controlled, a semiconductor device having favorable electrical characteristics, high reliability, and low power consumption can be manufactured.
摘要翻译：制造在不使用背栅电极的情况下控制阈值电压的晶体管，用于控制阈值电压的电路和杂质导入方法。使用晶体管制造具有良好的电特性，高可靠性和低功耗的半导体器件。使用包含其组成被控制的氧化钨膜的栅电极。通过氧化钨膜的成膜方法调整组合物等，由此可以控制功函数。通过使用功函数被控制为栅电极的一部分的氧化钨膜，可以控制晶体管的阈值。通过使用阈值电压被控制的晶体管，可以制造具有良好的电特性，高可靠性和低功耗的半导体器件。

5. 发明授权

US09799461B2 Power storage device and method for manufacturing electrode 有权
公开(公告)号：US09799461B2
公开(公告)日：2017-10-24
申请号：US13596189
申请日：2012-08-28
申请人： Kosei Noda , Kazutaka Kuriki , Nobuhiro Inoue
发明人： Kosei Noda , Kazutaka Kuriki , Nobuhiro Inoue
IPC分类号： H01M4/38 , H01M4/48 , H01G11/68 , H01G11/06 , H01G11/28 , H01G11/30 , H01G11/46 , H01G11/86 , H01M4/131 , H01M4/134 , H01M4/1391 , H01M4/1395 , H01M4/36 , H01M10/052
CPC分类号： H01G11/68 , H01G11/06 , H01G11/28 , H01G11/30 , H01G11/46 , H01G11/86 , H01M4/131 , H01M4/134 , H01M4/1391 , H01M4/1395 , H01M4/366 , H01M4/386 , H01M4/387 , H01M4/48 , H01M4/483 , H01M10/052 , Y02E60/13 , Y02T10/7011 , Y02T10/7022
摘要： As an electrode for a power storage device, an electrode including a current collector, a first active material layer over the current collector, and a second active material layer that is over the first active material layer and includes a particle containing niobium oxide and a granular active material is used, whereby the charge-discharge cycle characteristics and rate characteristics of the power storage device can be improved. Moreover, contact between the granular active material and the particle containing niobium oxide makes the granular active material physically fixed; accordingly, deterioration due to expansion and contraction of the active material which occur along with charge and discharge of the power storage device, such as powdering of the active material or its separation from the current collector, can be suppressed.

6. 发明授权

US09425045B2 Semiconductor device including oxide semiconductor and manufacturing method thereof 有权
标题翻译：包括氧化物半导体的半导体器件及其制造方法
公开(公告)号：US09425045B2
公开(公告)日：2016-08-23
申请号：US13107283
申请日：2011-05-13
申请人： Shunpei Yamazaki , Toshinari Sasaki , Kosei Noda
发明人： Shunpei Yamazaki , Toshinari Sasaki , Kosei Noda
IPC分类号： H01L21/02 , H01L29/786 , H01L27/12
CPC分类号： H01L29/66969 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/385 , H01L27/1225 , H01L29/7869
摘要： It is an object to provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability. An oxide semiconductor film serving as a channel formation region of a transistor is formed by a sputtering method at a temperature higher than 200° C., so that the number of water molecules eliminated from the oxide semiconductor film can be 0.5/nm3 or less according to thermal desorption spectroscopy. A substance including a hydrogen atom such as hydrogen, water, a hydroxyl group, or hydride which causes variation in the electric characteristics of a transistor including an oxide semiconductor is prevented from entering the oxide semiconductor film, whereby the oxide semiconductor film can be highly purified and made to be an electrically i-type (intrinsic) semiconductor.
摘要翻译：本发明的目的是提供一种具有稳定的电特性和高可靠性的氧化物半导体的半导体装置。通过溅射法在高于200℃的温度下形成用作晶体管的沟道形成区的氧化物半导体膜，从氧化物半导体膜中除去的水分子数可以为0.5nm / nm 3以下到热解吸光谱。包含氢原子的物质，例如氢，水，羟基或氢化物，其导致包括氧化物半导体的晶体管的电特性发生变化，从而防止氧化物半导体膜进入氧化物半导体膜，由此氧化物半导体膜可以被高度纯化并制成电i型（本征）半导体。

7. 发明授权

US08900916B2 Method for manufacturing semiconductor device including oxide semiconductor film 有权
标题翻译：包括氧化物半导体膜的半导体器件的制造方法
公开(公告)号：US08900916B2
公开(公告)日：2014-12-02
申请号：US12832329
申请日：2010-07-08
申请人： Shunpei Yamazaki , Miyuki Hosoba , Kosei Noda , Hiroki Ohara , Toshinari Sasaki , Junichiro Sakata
发明人： Shunpei Yamazaki , Miyuki Hosoba , Kosei Noda , Hiroki Ohara , Toshinari Sasaki , Junichiro Sakata
IPC分类号： H01L21/00
CPC分类号： H01L29/66969 , H01L21/477 , H01L27/1225 , H01L29/7869
摘要： A highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics, and a manufacturing method thereof. In the manufacturing method of the semiconductor device which includes a thin film transistor where a semiconductor layer including a channel formation region is an oxide semiconductor layer, heat treatment which reduces impurities such as moisture to improve the purity of the oxide semiconductor layer and oxidize the oxide semiconductor layer (heat treatment for dehydration or dehydrogenation) is performed. Not only impurities such as moisture in the oxide semiconductor layer but also those existing in a gate insulating layer are reduced, and impurities such as moisture existing in interfaces between the oxide semiconductor layer and films provided over and under and in contact with the oxide semiconductor layer are reduced.
摘要翻译：一种高度可靠的半导体器件及其制造方法，其包括具有稳定电特性的薄膜晶体管。在包括具有沟道形成区域的半导体层是氧化物半导体层的薄膜晶体管的半导体器件的制造方法中，减少诸如水分的杂质的热处理以提高氧化物半导体层的纯度并氧化氧化物进行半导体层（脱水或脱氢的热处理）。氧化物半导体层中的水分等杂质，以及存在于栅极绝缘层中的杂质都会降低，氧化物半导体层和氧化物半导体层之间的界面中存在的水分等杂质与氧化物半导体层减少了

8. 发明授权

US08803142B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08803142B2
公开(公告)日：2014-08-12
申请号：US12907722
申请日：2010-10-19
申请人： Shunpei Yamazaki , Masashi Tsubuku , Kosei Noda , Kouhei Toyotaka , Kazunori Watanabe , Hikaru Harada
发明人： Shunpei Yamazaki , Masashi Tsubuku , Kosei Noda , Kouhei Toyotaka , Kazunori Watanabe , Hikaru Harada
IPC分类号： H01L29/04 , H01L29/12 , H01L29/78
CPC分类号： H01L29/7869 , G06F15/76 , H01L27/10805 , H01L27/10873 , H01L27/11 , H01L27/1108 , H01L27/1112 , H01L27/1225 , H01L27/124 , H01L27/1255 , H01L28/60 , H01L29/24 , H01L29/41733 , H01L29/42384 , H01L29/78696
摘要： An object is to provide a memory device including a memory element that can be operated without problems by a thin film transistor with a low off-state current. Provided is a memory device in which a memory element including at least one thin film transistor that includes an oxide semiconductor layer is arranged as a matrix. The thin film transistor including an oxide semiconductor layer has a high field effect mobility and low off-state current, and thus can be operated favorably without problems. In addition, the power consumption can be reduced. Such a memory device is particularly effective in the case where the thin film transistor including an oxide semiconductor layer is provided in a pixel of a display device because the memory device and the pixel can be formed over one substrate.
摘要翻译：目的是提供一种存储器件，其包括可通过具有低截止电流的薄膜晶体管无故障地操作的存储元件。提供了一种存储器件，其中包括至少一个包括氧化物半导体层的薄膜晶体管的存储元件被布置为矩阵。包括氧化物半导体层的薄膜晶体管具有高场效应迁移率和低截止电流，因此可以有利地操作而没有问题。此外，可以降低功耗。由于存储器件和像素可以形成在一个衬底上，所以这种存储器件在包括氧化物半导体层的薄膜晶体管被设置在显示器件的像素中的情况下是特别有效的。

9. 发明授权

US08772849B2 Semiconductor memory device 有权
标题翻译：半导体存储器件
公开(公告)号：US08772849B2
公开(公告)日：2014-07-08
申请号：US13410608
申请日：2012-03-02
申请人： Kosei Noda
发明人： Kosei Noda
IPC分类号： H01L29/76 , H01L29/12
CPC分类号： H01L27/1156 , G11C16/0433 , H01L28/40
摘要： A semiconductor memory device includes a semiconductor film; a first gate insulating film covering the semiconductor film; a first gate electrode provided over the semiconductor film with the first gate insulating film interposed therebetween; a first conductive film which is provided over the first gate insulating film; an insulating film which is provided over the first gate insulating film, exposes top surfaces of the first gate electrode and the first conductive film, and has a groove portion between the first gate electrode and the first conductive film; an oxide semiconductor film which is provided over the insulating film and is in contact with the first gate electrode, the first conductive film, and the groove portion; a second gate insulating film covering the oxide semiconductor film; and a second gate electrode provided over the oxide semiconductor film and the groove portion with the second gate insulating film interposed therebetween.
摘要翻译：半导体存储器件包括半导体膜; 覆盖半导体膜的第一栅极绝缘膜; 设置在所述半导体膜上的第一栅电极，其间插入有所述第一栅极绝缘膜; 设置在所述第一栅极绝缘膜上的第一导电膜; 设置在第一栅极绝缘膜上的绝缘膜暴露第一栅电极和第一导电膜的顶表面，并且在第一栅电极和第一导电膜之间具有沟槽部分; 氧化物半导体膜，设置在所述绝缘膜上并且与所述第一栅电极，所述第一导电膜和所述槽部接触; 覆盖氧化物半导体膜的第二栅极绝缘膜; 以及设置在所述氧化物半导体膜和所述沟槽部分上方的第二栅电极，其间插入有所述第二栅极绝缘膜。

10. 发明授权

US08525304B2 Semiconductor device 有权
公开(公告)号：US08525304B2
公开(公告)日：2013-09-03
申请号：US13110240
申请日：2011-05-18
申请人： Yuta Endo , Toshinari Sasaki , Kosei Noda , Mizuho Sato
发明人： Yuta Endo , Toshinari Sasaki , Kosei Noda , Mizuho Sato
IPC分类号： H01L23/58
CPC分类号： H01L21/02554 , H01L21/02488 , H01L21/02664 , H01L27/1225 , H01L29/4908 , H01L29/66969 , H01L29/78606 , H01L29/7869
摘要： An insulating layer containing a silicon peroxide radical is used as an insulating layer in contact with an oxide semiconductor layer for forming a channel. Oxygen is released from the insulating layer, whereby oxygen deficiency in the oxide semiconductor layer and an interface state between the insulating layer and the oxide semiconductor layer can be reduced. Accordingly, a semiconductor device where reliability is high and variation in electric characteristics is small can be manufactured.

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