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1. 发明授权

US6143661A Method of processing semiconductor device with laser 有权
标题翻译：用激光加工半导体器件的方法
公开(公告)号：US6143661A
公开(公告)日：2000-11-07
申请号：US133330
申请日：1998-08-13
申请人： Takamasa Kousai , Hongyong Zhang , Akiharu Miyanaga
发明人： Takamasa Kousai , Hongyong Zhang , Akiharu Miyanaga
IPC分类号： H01L21/20 , H01L21/268 , H01L21/324 , H01L21/336 , H01L21/77 , H01L29/786 , H01L21/302
CPC分类号： H01L21/2026 , H01L27/1285
摘要： A method of fabricating a semiconductor device by the use of laser crystallization steps is provided. During these crystallization steps, an amorphous or polycrystalline semiconductor is crystallized by laser irradiation in such a way that generation of ridges is suppressed. Two separate laser crystallization steps are carried out. First, a laser irradiation step is performed in a vacuum, using somewhat weak laser light. Then, another laser irradiation step is performed in a vacuum, in the atmosphere, or in an oxygen ambient with intenser laser light. The first laser irradiation conducted in a vacuum does not result in satisfactory crystallization. However, this irradiation can suppress generation of ridges. The second laser irradiation step is performed in a vacuum, in the atmosphere, or in an oxygen ambient to achieve sufficient crystallization, but no ridges are produced.
摘要翻译：提供了通过使用激光晶化步骤制造半导体器件的方法。在这些结晶步骤中，通过激光照射使非晶或多晶半导体结晶化，从而抑制隆起的产生。进行两个单独的激光结晶步骤。首先，使用稍微弱的激光在真空中进行激光照射步骤。然后，在真空中，大气中，或在氧气环境下，用较强的激光进行另一激光照射步骤。在真空中进行的第一次激光照射不能令人满意的结晶。然而，这种照射可以抑制隆起的产生。第二激光照射步骤在真空中，大气中或在氧气氛中进行以实现足够的结晶，但不产生脊。

2. 发明授权

US5795795A Method of processing semiconductor device with laser 失效
公开(公告)号：US5795795A
公开(公告)日：1998-08-18
申请号：US462361
申请日：1995-06-05
申请人： Takamasa Kousai , Hongyong Zhang , Akiharu Miyanaga
发明人： Takamasa Kousai , Hongyong Zhang , Akiharu Miyanaga
IPC分类号： H01L21/20 , H01L21/268 , H01L21/324 , H01L21/336 , H01L21/77 , H01L29/786 , H01L21/306
CPC分类号： H01L21/2026 , H01L27/1285
摘要： A method of fabricating a semiconductor device by the use of laser crystallization steps is provided. During these crystallization steps, an amorphous or polycrystalline semiconductor is crystallized by laser irradiation in such a way that generation of ridges is suppressed. Two separate laser crystallization steps are carried out. First, a laser irradiation step is performed in a vacuum, using somewhat weak laser light. Then, another laser irradiation step is performed in a vacuum, in the atmosphere, or in an oxygen ambient with intenser laser light. The first laser irradiation conducted in a vacuum does not result in satisfactory crystallization. However, this irradiation can suppress generation of ridges. The second laser irradiation step is performed in a vacuum, in the atmosphere, or in an oxygen ambient to achieve sufficient crystallization, but no ridges are produced.

3. 发明授权

US07943930B2 Semiconductor device forming method 失效
标题翻译：半导体器件形成方法
公开(公告)号：US07943930B2
公开(公告)日：2011-05-17
申请号：US12143035
申请日：2008-06-20
申请人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga , Hisashi Ohtani
发明人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga , Hisashi Ohtani
IPC分类号： H01L29/04
CPC分类号： H01L29/045 , G09G2300/0408 , H01L21/02532 , H01L21/02672 , H01L27/1277 , H01L27/1296 , H01L29/66757
摘要： In thin film transistors (TFTs) having an active layer of crystalline silicon adapted for mass production, a catalytic element is introduced into doped regions of an amorphous silicon film by ion implantation or other means. This film is crystallized at a temperature below the strain point of the glass substrate. Further, a gate insulating film and a gate electrode are formed. Impurities are introduced by a self-aligning process. Then, the laminate is annealed below the strain point of the substrate to activate the dopant impurities. On the other hand, Neckel or other element is also used as a catalytic element for promoting crystallization of an amorphous silicon film. First, this catalytic element is applied in contact with the surface of the amorphous silicon film. The film is heated at 450 to 650° C. to create crystal nuclei. The film is further heated at a higher temperature to grow the crystal grains. In this way, a crystalline silicon film having improved crystallinity is formed.
摘要翻译：在具有适于批量生产的结晶硅有源层的薄膜晶体管（TFT）中，通过离子注入或其它方式将催化元素引入到非晶硅膜的掺杂区域中。该膜在低于玻璃基板的应变点的温度下结晶。此外，形成栅极绝缘膜和栅电极。杂质通过自对准过程引入。然后，层压体在基板的应变点以下退火以活化掺杂剂杂质。另一方面，Neckel或其它元素也用作促进非晶硅膜结晶的催化元素。首先，将该催化元件与非晶硅膜的表面接触。将膜在450至650℃加热以产生晶核。将膜进一步在较高温度下加热以生长晶粒。以这种方式，形成具有改善的结晶度的晶体硅膜。

4. 发明授权

US07749819B2 Method for manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07749819B2
公开(公告)日：2010-07-06
申请号：US11808035
申请日：2007-06-06
申请人： Hisashi Ohtani , Akiharu Miyanaga , Hongyong Zhang , Naoaki Yamaguchi
发明人： Hisashi Ohtani , Akiharu Miyanaga , Hongyong Zhang , Naoaki Yamaguchi
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L21/02532 , H01L21/02667 , H01L21/02672 , H01L21/02686 , H01L27/1277 , H01L29/66757
摘要： It is an object to obtain a crystalline silicon film having preferable characteristics for a thin film transistor.A crystalline silicon film having improved crystallinity is obtained by the following steps: forming a silicon nitride film substantially in contact with an amorphous silicon film on glass substrate; introducing a catalyst element such as nickel; performing an annealing treatment at a temperature of 500 to 600° C. for crystallization; and further irradiating it with a laser light, thereby a crystalline silicon film having improved crystallinity can be obtained. By using the crystalline silicon film thus obtained, a semiconductor device such as a TFT having improved characteristic can be obtained.
摘要翻译：本发明的目的是获得具有优选薄膜晶体管特性的晶体硅膜。通过以下步骤获得具有改善的结晶度的晶体硅膜：在玻璃基板上形成与非晶硅膜基本接触的氮化硅膜; 引入催化剂元素如镍; 在500〜600℃的温度下进行退火处理，进行结晶化; 并进一步用激光照射，从而可以获得具有改善的结晶度的结晶硅膜。通过使用由此获得的结晶硅膜，可以获得具有改善的特性的诸如TFT的半导体器件。

5. 发明授权

US07391051B2 Semiconductor device forming method 失效
标题翻译：半导体器件形成方法
公开(公告)号：US07391051B2
公开(公告)日：2008-06-24
申请号：US11321640
申请日：2005-12-30
申请人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga , Hisashi Ohtani
发明人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga , Hisashi Ohtani
IPC分类号： H01L31/00
CPC分类号： H01L29/045 , G09G2300/0408 , H01L21/02532 , H01L21/02672 , H01L27/1277 , H01L27/1296 , H01L29/66757
摘要： In thin film transistors (TFTs) having an active layer of crystalline silicon adapted for mass production, a catalytic element is introduced into doped regions of an amorphous silicon film by ion implantation or other means. This film is crystallized at a temperature below the strain point of the glass substrate. Further, a gate insulating film and a gate electrode are formed. Impurities are introduced by a self-aligning process. Then, the laminate is annealed below the strain point of the substrate to activate the dopant impurities. On the other hand, Neckel or other element is also used as a catalytic element for promoting crystallization of an amorphous silicon film. First, this catalytic element is applied in contact with the surface of the amorphous silicon film. The film is heated at 450 to 650° C. to create crystal nuclei. The film is further heated at a higher temperature to grow the crystal grains. In this way, a crystalline silicon film having improved crystallinity is formed.
摘要翻译：在具有适于批量生产的结晶硅有源层的薄膜晶体管（TFT）中，通过离子注入或其它方式将催化元素引入到非晶硅膜的掺杂区域中。该膜在低于玻璃基板的应变点的温度下结晶。此外，形成栅极绝缘膜和栅电极。杂质通过自对准过程引入。然后，层压体在基板的应变点以下退火以活化掺杂剂杂质。另一方面，Neckel或其它元素也用作促进非晶硅膜结晶的催化元素。首先，将该催化元件与非晶硅膜的表面接触。将膜在450至650℃加热以产生晶核。将膜进一步在较高温度下加热以生长晶粒。以这种方式，形成具有改善的结晶度的晶体硅膜。

6. 发明申请

US20060192202A1 Semiconductor device forming method 失效
公开(公告)号：US20060192202A1
公开(公告)日：2006-08-31
申请号：US11321640
申请日：2005-12-30
申请人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga , Hisashi Ohtani
发明人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga , Hisashi Ohtani
IPC分类号： H01L29/786
CPC分类号： H01L29/045 , G09G2300/0408 , H01L21/02532 , H01L21/02672 , H01L27/1277 , H01L27/1296 , H01L29/66757
摘要： In thin film transistors (TFTS) having an active layer of crystalline silicon adapted for mass production, a catalytic element is introduced into doped regions of an amorphous silicon film by ion implantation or other means. This film is crystallized at a temperature below the strain point of the glass substrate. Further, a gate insulating film and a gate electrode are formed. Impurities are introduced by a self-aligning process. Then, the laminate is annealed below the strain point of the substrate to activate the dopant impurities. On the other hand, Neckel or other element is also used as a catalytic element for promoting crystallization of an amorphous silicon film. First, this catalytic element is applied in contact with the surface of the amorphous silicon film. The film is heated at 450 to 650° C. to create crystal nuclei. The film is further heated at a higher temperature to grow the crystal grains. In this way, a crystalline silicon film having improved crystallinity is formed.

7. 发明授权

US06998639B2 Method for manufacturing a semiconductor device 失效
公开(公告)号：US06998639B2
公开(公告)日：2006-02-14
申请号：US10026802
申请日：2001-12-27
申请人： Hisashi Ohtani , Akiharu Miyanaga , Takeshi Fukunaga , Hongyong Zhang
发明人： Hisashi Ohtani , Akiharu Miyanaga , Takeshi Fukunaga , Hongyong Zhang
IPC分类号： H01L29/04
CPC分类号： H01L21/02672 , H01L21/02422 , H01L21/02532 , H01L21/02686 , H01L21/2022 , H01L27/1277 , H01L27/1296 , H01L29/045 , H01L29/66757 , H01L29/66772 , H01L29/78654 , H01L29/78675 , H01L29/78678 , Y10S148/016
摘要： A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film thereafter to crystallize the film.

8. 发明授权

US5543352A Method for manufacturing a semiconductor device using a catalyst 失效
标题翻译：使用催化剂制造半导体器件的方法
公开(公告)号：US5543352A
公开(公告)日：1996-08-06
申请号：US341935
申请日：1994-11-16
申请人： Hisashi Ohtani , Akiharu Miyanaga , Hongyong Zhang , Naoaki Yamaguchi , Atsunori Suzuki
发明人： Hisashi Ohtani , Akiharu Miyanaga , Hongyong Zhang , Naoaki Yamaguchi , Atsunori Suzuki
IPC分类号： H01L31/10 , G02F1/1362 , H01L21/02 , H01L21/20 , H01L21/336 , H01L27/12 , H01L29/78 , H01L29/786
CPC分类号： H01L29/66757 , H01L21/2022 , G02F1/13454
摘要： A method for manufacturing a thin film transistor having a crystalline silicon layer as an active layer comprises the steps of disposing a solution containing a catalyst for promoting a crystallization of silicon in contact with an amorphous silicon film, crystallizing the amorphous silicon at a relatively low temperature and then improving the crystallinity by irradiating the film with a laser light. The concentration of the catalyst in the crystallized silicon film can be controlled by controlling the concentration of the catalyst in the solution.
摘要翻译：制造具有结晶硅层作为有源层的薄膜晶体管的方法包括以下步骤：设置含有促进与非晶硅膜接触的硅结晶的催化剂的溶液，使非晶硅在相对低的温度下结晶然后用激光照射该膜来提高结晶度。可以通过控制溶液中催化剂的浓度来控制结晶硅膜中催化剂的浓度。

9. 发明申请

US20090035923A1 Method for manufacturing a semiconductor device 失效
公开(公告)号：US20090035923A1
公开(公告)日：2009-02-05
申请号：US12219026
申请日：2008-07-15
申请人： Hisashi Ohtani , Akiharu Miyanaga , Takeshi Fukunaga , Hongyong Zhang
发明人： Hisashi Ohtani , Akiharu Miyanaga , Takeshi Fukunaga , Hongyong Zhang
IPC分类号： H01L21/205
CPC分类号： H01L21/02672 , H01L21/02422 , H01L21/02532 , H01L21/02686 , H01L21/2022 , H01L27/1277 , H01L27/1296 , H01L29/045 , H01L29/66757 , H01L29/66772 , H01L29/78654 , H01L29/78675 , H01L29/78678 , Y10S148/016
摘要： A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film thereafter to crystallize the film.

10. 发明授权

US07235828B2 Semiconductor device with residual nickel from crystallization of semiconductor film 失效
标题翻译：具有半导体膜结晶残留镍的半导体器件
公开(公告)号：US07235828B2
公开(公告)日：2007-06-26
申请号：US10952774
申请日：2004-09-30
申请人： Hisashi Ohtani , Akiharu Miyanaga , Hongyong Zhang , Naoaki Yamaguchi
发明人： Hisashi Ohtani , Akiharu Miyanaga , Hongyong Zhang , Naoaki Yamaguchi
IPC分类号： H01L29/786
CPC分类号： H01L21/02532 , H01L21/02667 , H01L21/02672 , H01L21/02686 , H01L27/1277 , H01L29/66757
摘要： It is an object to obtain a crystalline silicon film having preferable characteristics for a thin film transistor.A crystalline silicon film having improved crystallinity is obtained by the following steps: forming a silicon nitride film substantially in contact with an amorphous silicon film on glass substrate; introducing a catalyst element such as nickel; performing an annealing treatment at a temperature of 500 to 600° C. for crystallization; and further irradiating it with a laser light, thereby a crystalline silicon film having improved crystallinity can be obtained. By using the crystalline silicon film thus obtained, a semiconductor device such as a TFT having improved characteristic can be obtained.
摘要翻译：本发明的目的是获得具有优选薄膜晶体管特性的晶体硅膜。通过以下步骤获得具有改善的结晶度的晶体硅膜：在玻璃基板上形成与非晶硅膜基本接触的氮化硅膜; 引入催化剂元素如镍; 在500〜600℃的温度下进行退火处理，进行结晶化; 并进一步用激光照射，从而可以获得具有改善的结晶度的结晶硅膜。通过使用由此获得的结晶硅膜，可以获得具有改善的特性的诸如TFT的半导体器件。

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