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1. 发明授权

US4697102A Bipolar logic circuit having two multi-emitter transistors with an emitter of one connected to the collector of the other to prevent saturation 失效
标题翻译：双极逻辑电路具有两个多发射极晶体管，其发射极连接到另一个的集电极以防止饱和
公开(公告)号：US4697102A
公开(公告)日：1987-09-29
申请号：US737872
申请日：1985-05-28
申请人： Takahiro Okabe , Makoto Hayashi , Katuhiro Morisuye , Tomoyuki Watanabe , Katsuyoshi Washio , Setsuo Ogura , Makoto Furihata , Shizuo Kondo
发明人： Takahiro Okabe , Makoto Hayashi , Katuhiro Morisuye , Tomoyuki Watanabe , Katsuyoshi Washio , Setsuo Ogura , Makoto Furihata , Shizuo Kondo
IPC分类号： H03K19/00 , H03K19/013 , H03K19/082
CPC分类号： H03K19/001 , H03K19/013
摘要： A logic circuit is provided which includes a first multi-emitter transistor with its emitters coupled to a group of first input lines and a first transistor with its base coupled to the collector of said first multi-emitter transistor. A second transistor is also provided with its base coupled to the collector of said first transistor, said second transistor having a polarity opposite to that of said first multi-emitter transistor. A second multi-emitter transistor is connected with its base coupled to the collector of said second transistor and with its emitters coupled to a group of second input lines, and a third transistor is connected with its base coupled to the collector of said second multi-emitter transistor and with its collector coupled to an output line. The collector of said first multi-emitter transistor is coupled to the emitter of said second multi-emitter transistor in order to absorb minority carriers stored in the transistors. This feature significantly improves the circuit operating speed. A further feature is the provision of a logic circuit which is highly integrated and which consumes reduced amounts of electric power, while maintaining high-speed performance of the TTL circuit, by substituting a multi-collector transistor that reversely operates for an inverter portion of the TTL circuit.
摘要翻译：提供了一种逻辑电路，其包括第一多发射极晶体管，其发射极耦合到一组第一输入线，第一晶体管的基极耦合到所述第一多发射极晶体管的集电极。第二晶体管还设置有其基极耦合到所述第一晶体管的集电极，所述第二晶体管具有与所述第一多发射极晶体管的极性相反的极性。第二多发射极晶体管与其基极耦合，耦合到所述第二晶体管的集电极，并且其发射极耦合到一组第二输入线，并且第三晶体管与其基极连接，耦合到所述第二多晶体管的集电极，发射极晶体管，其集电极耦合到输出线。所述第一多发射极晶体管的集电极耦合到所述第二多发射极晶体管的发射极，以便吸收存储在晶体管中的少数载流子。该功能显着提高了电路工作速度。另一个特征是提供了一种高度集成的逻辑电路，并且通过将反向工作的多集电极晶体管替换为逆变器部分的多集电极晶体管，同时维持TTL电路的高速性能，从而消耗了较少的电功率 TTL电路。

2. 发明授权

US4670859A Logic circuit 失效
标题翻译：逻辑电路
公开(公告)号：US4670859A
公开(公告)日：1987-06-02
申请号：US704412
申请日：1985-02-22
申请人： Makoto Furihata , Setsuo Ogura , Shizuo Kondo , Eiji Minamimura
发明人： Makoto Furihata , Setsuo Ogura , Shizuo Kondo , Eiji Minamimura
IPC分类号： G11C17/00 , H03K19/00 , H03K19/091
CPC分类号： H03K19/091 , H03K19/001
摘要： A logic circuit of a large scale which consumes small amounts of electric power is comprised of a plurality of ROM portions each formed of IIL circuits. Input signal lines are commonly used to transmit input signals to the ROM portions. The plurality of ROM portions are selectively operated by ROM select signals, and outputs corresponding to the input signals are obtained from a selected ROM portion. To select a particular ROM portion out of the plurality of ROM portions, the emitters of inverse npn transistors of IIL circuits constituting the selected ROM portion are rendered to assume ground potential. In the meantime, the emitters of the inverse npn transistors of IIL circuits in the non-selected ROM portions are held in a floating condition. This makes it possible to obtain a logic circuit which consumes small amounts of electric power with a very simple construction since the non-selected ROM portions consume no power.
摘要翻译：消耗少量电力的大规模的逻辑电路包括由IIL电路形成的多个ROM部分。输入信号线通常用于将输入信号发送到ROM部分。多个ROM部分由ROM选择信号选择性地操作，并且从所选择的ROM部分获得对应于输入信号的输出。为了选择多个ROM部分中的特定ROM部分，构成所选择的ROM部分的IIL电路的逆npn晶体管的发射极被呈现为地电位。同时，未选择的ROM部分中的IIL电路的逆npn晶体管的发射极保持在浮置状态。这使得可以以非常简单的结构获得消耗少量电力的逻辑电路，因为未选择的ROM部分不消耗电力。

3. 发明授权

US4725745A Bi-MOS PLA 失效
公开(公告)号：US4725745A
公开(公告)日：1988-02-16
申请号：US643260
申请日：1984-08-22
申请人： Shizuo Kondo , Setsuo Ogura , Eiji Minamimura , Makoto Furihata
发明人： Shizuo Kondo , Setsuo Ogura , Eiji Minamimura , Makoto Furihata
IPC分类号： H01L27/112 , H03K19/0944 , H03K19/177 , H03K19/02 , G06F7/38 , H03K19/091
CPC分类号： H03K19/09448 , H01L27/112 , H03K19/17708
摘要： An integrated programmable logic array formed within a single silicon chip comprises a combination of a logical product gate array and a logical summation gate array. The logical product gate array is equipped with a plurality of MIS field-effect transistors whose gates are selectively driven by a plurality of input signals. Source-drain paths of these transistors are connected in series. The logical summation gate array is equipped with a plurality of inverted bipolar transistors having collector-emitter paths which are connected in parallel.
摘要翻译：形成在单个硅芯片内的集成可编程逻辑阵列包括逻辑乘积门阵列和逻辑求和门阵列的组合。逻辑积门阵列配备有多个MIS场效应晶体管，其栅极由多个输入信号选择性地驱动。这些晶体管的源极 - 漏极路径串联连接。逻辑求和门阵列配备有多个并联连接的集电极 - 发射极路径的反向双极晶体管。

4. 发明授权

US4659947A PLA with forward-conduction bipolar "and" array and I.sup.2 L "OR" array 失效
标题翻译： PLA与前导双极“和”阵列和I2L“OR”阵列
公开(公告)号：US4659947A
公开(公告)日：1987-04-21
申请号：US665385
申请日：1984-10-26
申请人： Setsuo Ogura , Shizuo Kondo , Eiji Minamimura , Makoto Furihata
发明人： Setsuo Ogura , Shizuo Kondo , Eiji Minamimura , Makoto Furihata
IPC分类号： H03K19/091 , H03K19/177 , H03K19/082
CPC分类号： H03K19/17708
摘要： An integrated programmable logic array formed within a single silicon chip comprises a combination of an NAND or AND gate array and an NOR or OR gate array.The NAND or AND gate array includes a plurality of bipolar transistors which are driven to operate in the forward direction by a plurality of input signals, and a plurality of Schottky barrier diodes provided between the collectors of the bipolar transistors and output signal lines. The NOR or OR gate array includes a plurality of other bipolar transistors which are driven to operate in the backward direction by a plurality of output signals from the NAND or AND gate array.
摘要翻译：形成在单个硅芯片内的集成可编程逻辑阵列包括NAND或与门阵列和NOR或OR门阵列的组合。 NAND或与门阵列包括多个双极晶体管，其被驱动以通过多个输入信号在正向工作，以及设置在双极晶体管的集电极和输出信号线之间的多个肖特基势垒二极管。 NOR或OR门阵列包括多个其它双极晶体管，其被驱动以通过来自NAND或与门阵列的多个输出信号在向后方向上工作。

5. 发明授权

US4804940A Resistor and electron device employing the same 失效
标题翻译：电阻器和采用该电阻器的电子器件
公开(公告)号：US4804940A
公开(公告)日：1989-02-14
申请号：US843666
申请日：1986-03-25
申请人： Akira Takigawa , Shizuo Kondo , Masumi Kasahara , Toshinori Hirashima , Mikio Haijima , Setsuo Ogura , Osamu Takada , Yoshiki Akamatsu
发明人： Akira Takigawa , Shizuo Kondo , Masumi Kasahara , Toshinori Hirashima , Mikio Haijima , Setsuo Ogura , Osamu Takada , Yoshiki Akamatsu
IPC分类号： H01C7/00 , H01L21/02 , H03M1/76 , H03M1/36 , H03M1/74
CPC分类号： H01L28/20 , H01C7/006 , H03M1/765
摘要： A resistor is provided with a plurality of turn parts whose corners have an obtuse flexional angle in order to improve the relative resistance precision. A ladder resistor can be formed with a plurality of such resistors connected in series, and various electronic devices are formed employing the ladder resistor.
摘要翻译：电阻器设置有多个转弯部分，其拐角具有钝的弯曲角度，以便提高相对电阻精度。梯形电阻器可以形成有串联连接的多个这样的电阻器，并且使用梯形电阻器形成各种电子器件。

6. 发明授权

US07817437B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07817437B2
公开(公告)日：2010-10-19
申请号：US12394421
申请日：2009-02-27
申请人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
发明人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
IPC分类号： H05K7/02 , H05K7/06 , H05K7/08 , H05K7/10
CPC分类号： H01L25/16 , H01L23/49844 , H01L23/552 , H01L23/645 , H01L23/66 , H01L24/06 , H01L24/48 , H01L24/49 , H01L2223/6611 , H01L2223/6644 , H01L2224/05554 , H01L2224/05599 , H01L2224/48091 , H01L2224/48227 , H01L2224/48799 , H01L2224/49113 , H01L2224/49175 , H01L2224/49433 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01082 , H01L2924/09701 , H01L2924/10161 , H01L2924/10253 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/15153 , H01L2924/1517 , H01L2924/19105 , H01L2924/19107 , H01L2924/30107 , H01L2924/3025 , H03F1/56 , H03F3/195 , H03F3/213 , H03F3/604 , H03F2200/12 , H03F2200/168 , H03F2200/222 , H03F2200/318 , H03F2200/387 , H03F2200/408 , H03F2200/451 , H03H7/383 , H01L2924/00 , H01L2224/45099
摘要： In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.
摘要翻译：在诸如高频功率放大器模块的半导体器件中，在安装在布线基板的主表面上的半导体芯片上形成多个放大装置，并且半导体芯片的电极通过导线电连接到电极的布线基板。为了使高频功率放大器模块尺寸变小，将电连接到固定基准电位的导线的基板侧接合电极位于距离半导体芯片的一侧更靠近基板侧接合电极的位置，电连接到输出线。电连接到输入线的基板侧输入电极位于与半导体芯片的侧面相距一定距离处，等于从半导体芯片侧到基板侧输出电极的距离，或者距离半导体芯片半导体芯片的侧面比基板侧接合电极为止。

7. 发明申请

US20090161329A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20090161329A1
公开(公告)日：2009-06-25
申请号：US12394421
申请日：2009-02-27
申请人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
发明人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
IPC分类号： H01L23/66
CPC分类号： H01L25/16 , H01L23/49844 , H01L23/552 , H01L23/645 , H01L23/66 , H01L24/06 , H01L24/48 , H01L24/49 , H01L2223/6611 , H01L2223/6644 , H01L2224/05554 , H01L2224/05599 , H01L2224/48091 , H01L2224/48227 , H01L2224/48799 , H01L2224/49113 , H01L2224/49175 , H01L2224/49433 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01082 , H01L2924/09701 , H01L2924/10161 , H01L2924/10253 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/15153 , H01L2924/1517 , H01L2924/19105 , H01L2924/19107 , H01L2924/30107 , H01L2924/3025 , H03F1/56 , H03F3/195 , H03F3/213 , H03F3/604 , H03F2200/12 , H03F2200/168 , H03F2200/222 , H03F2200/318 , H03F2200/387 , H03F2200/408 , H03F2200/451 , H03H7/383 , H01L2924/00 , H01L2224/45099
摘要： In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.
摘要翻译：在诸如高频功率放大器模块的半导体器件中，在安装在布线基板的主表面上的半导体芯片上形成多个放大装置，并且半导体芯片的电极通过导线电连接到电极的布线基板。为了使高频功率放大器模块尺寸变小，将电连接到固定基准电位的导线的基板侧接合电极位于距离半导体芯片的一侧更靠近基板侧接合电极的位置，电连接到输出线。电连接到输入线的基板侧输入电极位于距离半导体芯片侧的距离大约等于从半导体芯片的侧面到基板侧输出电极的距离处，或者位于距离半导体芯片半导体芯片的侧面比基板侧接合电极为止。

8. 发明申请

US20070001300A1 Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20070001300A1
公开(公告)日：2007-01-04
申请号：US11451579
申请日：2006-06-13
申请人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
发明人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
IPC分类号： H01L23/34
CPC分类号： H01L24/06 , H01L23/04 , H01L23/49805 , H01L23/49822 , H01L23/49838 , H01L23/49844 , H01L23/552 , H01L23/645 , H01L23/66 , H01L24/48 , H01L24/49 , H01L25/16 , H01L2223/6611 , H01L2223/6627 , H01L2223/6644 , H01L2223/6655 , H01L2224/05553 , H01L2224/05554 , H01L2224/05599 , H01L2224/45139 , H01L2224/45147 , H01L2224/4554 , H01L2224/45669 , H01L2224/48011 , H01L2224/48091 , H01L2224/48227 , H01L2224/484 , H01L2224/48799 , H01L2224/49111 , H01L2224/49113 , H01L2224/4912 , H01L2224/49175 , H01L2224/49433 , H01L2224/73265 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01014 , H01L2924/01015 , H01L2924/01021 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01047 , H01L2924/01051 , H01L2924/01078 , H01L2924/09701 , H01L2924/10161 , H01L2924/10253 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/15153 , H01L2924/1517 , H01L2924/15173 , H01L2924/15313 , H01L2924/15787 , H01L2924/16152 , H01L2924/19032 , H01L2924/19105 , H01L2924/19107 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H03F1/56 , H03F3/195 , H03F3/213 , H03F3/604 , H03F2200/12 , H03F2200/168 , H03F2200/222 , H03F2200/255 , H03F2200/318 , H03F2200/387 , H03F2200/408 , H03F2200/411 , H03F2200/423 , H03F2200/451 , H03F2200/543 , H03H7/383 , H05K1/0243 , H05K1/0298 , H05K1/183 , H05K3/403 , H01L2924/05432 , H01L2924/2065 , H01L2224/45099 , H01L2924/00
摘要： In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.
摘要翻译：在诸如高频功率放大器模块的半导体器件中，在安装在布线基板的主表面上的半导体芯片上形成多个放大装置，并且半导体芯片的电极通过导线电连接到电极的布线基板。为了使高频功率放大器模块尺寸变小，将电连接到固定基准电位的导线的基板侧接合电极位于距离半导体芯片的一侧更靠近基板侧接合电极的位置，电连接到输出线。电连接到输入线的基板侧输入电极位于距离半导体芯片侧的距离大约等于从半导体芯片的侧面到基板侧输出电极的距离处，或者位于距离半导体芯片半导体芯片的侧面比基板侧接合电极为止。

9. 发明申请

US20060028277A1 Power amplifier module 失效
标题翻译：功率放大器模块
公开(公告)号：US20060028277A1
公开(公告)日：2006-02-09
申请号：US11247185
申请日：2005-10-12
申请人： Kiichi Yamashita , Tomonori Tanoue , Shizuo Kondo
发明人： Kiichi Yamashita , Tomonori Tanoue , Shizuo Kondo
IPC分类号： H03G3/10
CPC分类号： H03F1/02 , H03F1/30 , H03F3/21 , H03G7/001 , H03G7/06
摘要： The present invention provides a power amplifier module featuring that: its output power characteristic smoothly changes as the input control Voltage changes; and its control sensitivity is stable over a wide dynamic range. By same means, idling current for gain setting is supplied to a single amplifier element or all of multiple stages of amplifier elements of the power amplifier module. By making this idling current behave so as to exponentially change, relative to input control voltage, the invention enables output power control proportional to the input control voltage.
摘要翻译：本发明提供了一种功率放大器模块，其特征在于：其输出功率特性随着输入控制电压的变化而平滑地变化; 其控制灵敏度在宽动态范围内稳定。通过同样的方式，用于增益设定的空载电流被提供给功率放大器模块的单个放大器元件或放大器元件的多个级的全部。通过使该怠速电流相对于输入控制电压发生指数变化，本发明实现与输入控制电压成比例的输出功率控制。

10. 发明申请

US20080048777A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20080048777A1
公开(公告)日：2008-02-28
申请号：US11905421
申请日：2007-10-01
申请人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
发明人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
IPC分类号： H03F3/20
CPC分类号： H01L25/16 , H01L23/49844 , H01L23/552 , H01L23/645 , H01L23/66 , H01L24/06 , H01L24/48 , H01L24/49 , H01L2223/6611 , H01L2223/6644 , H01L2224/05554 , H01L2224/05599 , H01L2224/48091 , H01L2224/48227 , H01L2224/48799 , H01L2224/49113 , H01L2224/49175 , H01L2224/49433 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01082 , H01L2924/09701 , H01L2924/10161 , H01L2924/10253 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/15153 , H01L2924/1517 , H01L2924/19105 , H01L2924/19107 , H01L2924/30107 , H01L2924/3025 , H03F1/56 , H03F3/195 , H03F3/213 , H03F3/604 , H03F2200/12 , H03F2200/168 , H03F2200/222 , H03F2200/318 , H03F2200/387 , H03F2200/408 , H03F2200/451 , H03H7/383 , H01L2924/00 , H01L2224/45099
摘要： In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.
摘要翻译：在诸如高频功率放大器模块的半导体器件中，在安装在布线基板的主表面上的半导体芯片上形成多个放大装置，并且半导体芯片的电极通过导线电连接到电极的布线基板。为了使高频功率放大器模块尺寸变小，将电连接到固定基准电位的导线的基板侧接合电极位于距离半导体芯片的一侧更靠近基板侧接合电极的位置，电连接到输出线。电连接到输入线的基板侧输入电极位于距离半导体芯片侧的距离大约等于从半导体芯片的侧面到基板侧输出电极的距离处，或者位于距离半导体芯片半导体芯片的侧面比基板侧接合电极为止。

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