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    • 7. 发明授权
    • High-luminance quantum correlation photon beam generator
    • 高亮度量子相关光子束发生器
    • US07486433B2
    • 2009-02-03
    • US11664388
    • 2005-09-30
    • Vygandas JarutisVygantas MizeikisSaulius JuodkazisHiroaki Misawa
    • Vygandas JarutisVygantas MizeikisSaulius JuodkazisHiroaki Misawa
    • G02F1/35
    • B82Y10/00G02F1/39G06N99/002
    • A high-luminance quantum correlation photon beam generator in which a laser light source (1) emits a laser pumped light and a parametric crystal (2) generates a pair of two photons of a signal photon and an idler photon on receiving the pumped light to emit two photon beams. Further, a beam splitter (5) splits a signal photon beam (6) from an idler photon beam (7), a mode inverter (10) rotates one of the signal photon beam, (6) and the idler photon beam (7) 180° around its geometric center, a phase adjusting means (8) adjusts phases of the signal photon beam (6) and the idler photon beam (7) based on an optical time delay, and a beam coupling means (14) overlays the signal photon beam (6) with the idler photon beam (7) in a common-line polarized annular shape by the mode inverter (10) to bring them into a quantum correlated state.
    • 其中激光光源(1)发射激光泵浦光和参数晶体(2)的高亮度量子相关光子发生器在接收泵浦光时产生信号光子和惰性光子的一对两个光子 发射两个光子束。 此外,分束器(5)从信号光子束(7)分离信号光子束(6),模式反相器(10)旋转信号光子束(6)和惰轮光子束(7)之一, 基于光学时间延迟,相位调整装置(8)调整信号光子束(6)和惰轮光子束(7)的相位,并且束耦合装置(14)覆盖信号 具有惰性光子束(7)的光子束(6)通过模式反相器(10)以共线偏振环形形状,使其进入量子相关状态。
    • 8. 发明申请
    • Metal Structure and Production Method Therefor
    • 金属结构及其制造方法
    • US20080160287A1
    • 2008-07-03
    • US11884614
    • 2006-02-16
    • Hiroaki MisawaKosei UenoYasuyuki TsuboiKeiji Sasaki
    • Hiroaki MisawaKosei UenoYasuyuki TsuboiKeiji Sasaki
    • B32B5/16G03F7/00B08B3/12
    • G02B5/3058B82Y20/00G01N21/554G02B5/008Y10T428/24917Y10T428/25
    • A metal structure capable of significantly increasing wavelength selectivity and polarization electivity for an incident light, and a production method thereof. First, a solid transparent substrate (glass substrate) (10) is cleaned and dried (S100). The surface of the substrate (10) is spin-coated with a positive electron lithography-use resist solution and then baked, and the resist solution is removed to form a resist thin film (20) on the substrate (10) (S200). A specified pattern is drawn on the resist thin film (20) with an electron beam, and the film is developed, rinsed and dried (S300). Then, metals such as chromium and then gold are formed sequentially on the substrate (10) by sputtering (S400). And, excessive resist materials are removed from the surface of the substrate (10) (S500), whereby metal nano-rod array (40) is completed. The metal nano-rod array (40) has a structure in which many metal nano-rods having their sizes precisely controlled are integrated on the substrate (10) at constant fine intervals and with their directions aligned in one axial direction.
    • 能够显着提高入射光的波长选择性和极化电位的金属结构体及其制造方法。 首先,清洁干燥固体透明基板(玻璃基板)(10)(S100)。 用正电子光刻用抗蚀剂溶液旋涂基板(10)的表面,然后烘烤,除去抗蚀剂溶液,以在基板(10)上形成抗蚀剂薄膜(20)(S 200) 。 用电子束在抗蚀剂薄膜(20)上绘制规定的图案,并将该膜显影,漂洗和干燥(S 300)。 然后,通过溅射在基板(10)上依次形成诸如铬,然后金属的金属(S 400)。 并且,从基板(10)的表面除去过量的抗蚀剂材料(S 500),从而完成金属纳米棒阵列(40)。 金属纳米棒阵列(40)具有这样的结构,其中许多具有精确控制的尺寸的金属纳米棒以恒定的细微间隔并且沿着一个轴向对齐在基底(10)上。
    • 10. 发明授权
    • Photoelectric conversion device, light detecting device, and light detecting method
    • 光电转换装置,光检测装置和光检测方法
    • US09240286B2
    • 2016-01-19
    • US13394528
    • 2010-09-02
    • Hiroaki MisawaYoshiaki NishijimaKosei UenoKei Murakoshi
    • Hiroaki MisawaYoshiaki NishijimaKosei UenoKei Murakoshi
    • H01L31/0224H01L31/04H01L31/18H01L51/44H01L29/47H01G9/20
    • H01G9/2031H01G9/2022H01L29/47H01L31/022425H01L31/18Y02E10/542Y02P70/521
    • The present invention has an object to provide a photoelectric conversion device which can be manufactured through a simple manufacturing process, achieve photoelectric conversion over a wide range of wavelength regions, and attain high photoelectric conversion efficiency even in the infrared wavelength region, a photodetection device, and a photodetection method. This photoelectric conversion device 1 includes a substrate 2 containing single crystalline titanium dioxide, adhesion layers 2c formed on a surface 2a of the substrate 2, metal microstructure bodies 3, each of which has a volume of 1,000 nm3 or more and 3,000,000 nm3 or less, arranged at predetermined intervals in a predetermined direction on surfaces of the adhesion layers 2c, a container 4 for containing an electrolyte solution L in an arrangement region of the metal microstructure bodies 3 on the surface 2a of the substrate 2, a conductive layer 7 formed on a rear surface 2b of the substrate 2, and a counter electrode 5 in contact with the electrolyte solution L in the container 4; and the metal microstructure bodies 3 adhere onto the substrate 2 through the adhesion layers 2c, a Schottky barrier is formed at an interface of the substrate 2 with the metal microstructure bodies 3, and photoelectric conversion is carried out for light in an infrared region by utilizing a plasmon resonance phenomenon.
    • 本发明的目的是提供一种能够通过简单的制造工艺制造的光电转换装置,在宽范围的波长区域上实现光电转换,并且即使在红外波长区域也获得高的光电转换效率,光电检测装置, 和光电检测方法。 该光电转换装置1包括含有单晶二氧化钛的基板2,形成在基板2的表面2a上的粘合层2c,金属微结构体3的体积为1000nm 3以上且3,000,000nm 3以下, 在粘合层2c的表面上以预定方向以预定的方向排列,在基板2的表面2a上的金属微结构体3的配置区域中容纳电解液L的容器4,形成在基板2的表面2a上的导电层7 基板2的后表面2b和与容器4中的电解液L接触的对电极5; 并且金属微结构体3通过粘附层2c附着在基板2上,在基板2与金属微结构体3的界面形成肖特基势垒,利用红外线区域的光进行光电转换 等离子体共振现象。