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    • 1. 发明授权
    • Photoelectric conversion device, light detecting device, and light detecting method
    • 光电转换装置,光检测装置和光检测方法
    • US09240286B2
    • 2016-01-19
    • US13394528
    • 2010-09-02
    • Hiroaki MisawaYoshiaki NishijimaKosei UenoKei Murakoshi
    • Hiroaki MisawaYoshiaki NishijimaKosei UenoKei Murakoshi
    • H01L31/0224H01L31/04H01L31/18H01L51/44H01L29/47H01G9/20
    • H01G9/2031H01G9/2022H01L29/47H01L31/022425H01L31/18Y02E10/542Y02P70/521
    • The present invention has an object to provide a photoelectric conversion device which can be manufactured through a simple manufacturing process, achieve photoelectric conversion over a wide range of wavelength regions, and attain high photoelectric conversion efficiency even in the infrared wavelength region, a photodetection device, and a photodetection method. This photoelectric conversion device 1 includes a substrate 2 containing single crystalline titanium dioxide, adhesion layers 2c formed on a surface 2a of the substrate 2, metal microstructure bodies 3, each of which has a volume of 1,000 nm3 or more and 3,000,000 nm3 or less, arranged at predetermined intervals in a predetermined direction on surfaces of the adhesion layers 2c, a container 4 for containing an electrolyte solution L in an arrangement region of the metal microstructure bodies 3 on the surface 2a of the substrate 2, a conductive layer 7 formed on a rear surface 2b of the substrate 2, and a counter electrode 5 in contact with the electrolyte solution L in the container 4; and the metal microstructure bodies 3 adhere onto the substrate 2 through the adhesion layers 2c, a Schottky barrier is formed at an interface of the substrate 2 with the metal microstructure bodies 3, and photoelectric conversion is carried out for light in an infrared region by utilizing a plasmon resonance phenomenon.
    • 本发明的目的是提供一种能够通过简单的制造工艺制造的光电转换装置,在宽范围的波长区域上实现光电转换,并且即使在红外波长区域也获得高的光电转换效率,光电检测装置, 和光电检测方法。 该光电转换装置1包括含有单晶二氧化钛的基板2,形成在基板2的表面2a上的粘合层2c,金属微结构体3的体积为1000nm 3以上且3,000,000nm 3以下, 在粘合层2c的表面上以预定方向以预定的方向排列,在基板2的表面2a上的金属微结构体3的配置区域中容纳电解液L的容器4,形成在基板2的表面2a上的导电层7 基板2的后表面2b和与容器4中的电解液L接触的对电极5; 并且金属微结构体3通过粘附层2c附着在基板2上,在基板2与金属微结构体3的界面形成肖特基势垒,利用红外线区域的光进行光电转换 等离子体共振现象。
    • 2. 发明申请
    • PHOTOELECTRIC CONVERSION DEVICE, LIGHT DETECTING DEVICE, AND LIGHT DETECTING METHOD
    • 光电转换装置,光检测装置和光检测方法
    • US20120325301A1
    • 2012-12-27
    • US13394528
    • 2010-09-02
    • Hiroaki MisawaYoshiaki NishijimaKosei UenoKei Murakoshi
    • Hiroaki MisawaYoshiaki NishijimaKosei UenoKei Murakoshi
    • H01L31/07
    • H01G9/2031H01G9/2022H01L29/47H01L31/022425H01L31/18Y02E10/542Y02P70/521
    • The present invention has an object to provide a photoelectric conversion device which can be manufactured through a simple manufacturing process, achieve photoelectric conversion over a wide range of wavelength regions, and attain high photoelectric conversion efficiency even in the infrared wavelength region, a photodetection device, and a photodetection method. This photoelectric conversion device 1 includes a substrate 2 containing single crystalline titanium dioxide, adhesion layers 2c formed on a surface 2a of the substrate 2, metal microstructure bodies 3, each of which has a volume of 1,000 nm3 or more and 3,000,000 nm3 or less, arranged at predetermined intervals in a predetermined direction on surfaces of the adhesion layers 2c, a container 4 for containing an electrolyte solution L in an arrangement region of the metal microstructure bodies 3 on the surface 2a of the substrate 2, a conductive layer 7 formed on a rear surface 2b of the substrate 2, and a counter electrode 5 in contact with the electrolyte solution L in the container 4; and the metal microstructure bodies 3 adhere onto the substrate 2 through the adhesion layers 2c, a Schottky barrier is formed at an interface of the substrate 2 with the metal microstructure bodies 3, and photoelectric conversion is carried out for light in an infrared region by utilizing a plasmon resonance phenomenon.
    • 本发明的目的是提供一种能够通过简单的制造工艺制造的光电转换装置,在宽范围的波长区域上实现光电转换,并且即使在红外波长区域也获得高的光电转换效率,光电检测装置, 和光电检测方法。 该光电转换装置1包括含有单晶二氧化钛的基板2,形成在基板2的表面2a上的粘合层2c,金属微结构体3的体积为1000nm 3以上且3,000,000nm 3以下, 在粘合层2c的表面上以预定方向以预定的方向排列,在基板2的表面2a上的金属微结构体3的配置区域中容纳电解液L的容器4,形成在基板2的表面2a上的导电层7 基板2的后表面2b和与容器4中的电解液L接触的对电极5; 并且金属微结构体3通过粘附层2c附着在基板2上,在基板2与金属微结构体3的界面形成肖特基势垒,利用红外线区域的光进行光电转换 等离子体共振现象。
    • 6. 发明申请
    • Metal Structure and Production Method Therefor
    • 金属结构及其制造方法
    • US20080160287A1
    • 2008-07-03
    • US11884614
    • 2006-02-16
    • Hiroaki MisawaKosei UenoYasuyuki TsuboiKeiji Sasaki
    • Hiroaki MisawaKosei UenoYasuyuki TsuboiKeiji Sasaki
    • B32B5/16G03F7/00B08B3/12
    • G02B5/3058B82Y20/00G01N21/554G02B5/008Y10T428/24917Y10T428/25
    • A metal structure capable of significantly increasing wavelength selectivity and polarization electivity for an incident light, and a production method thereof. First, a solid transparent substrate (glass substrate) (10) is cleaned and dried (S100). The surface of the substrate (10) is spin-coated with a positive electron lithography-use resist solution and then baked, and the resist solution is removed to form a resist thin film (20) on the substrate (10) (S200). A specified pattern is drawn on the resist thin film (20) with an electron beam, and the film is developed, rinsed and dried (S300). Then, metals such as chromium and then gold are formed sequentially on the substrate (10) by sputtering (S400). And, excessive resist materials are removed from the surface of the substrate (10) (S500), whereby metal nano-rod array (40) is completed. The metal nano-rod array (40) has a structure in which many metal nano-rods having their sizes precisely controlled are integrated on the substrate (10) at constant fine intervals and with their directions aligned in one axial direction.
    • 能够显着提高入射光的波长选择性和极化电位的金属结构体及其制造方法。 首先,清洁干燥固体透明基板(玻璃基板)(10)(S100)。 用正电子光刻用抗蚀剂溶液旋涂基板(10)的表面,然后烘烤,除去抗蚀剂溶液,以在基板(10)上形成抗蚀剂薄膜(20)(S 200) 。 用电子束在抗蚀剂薄膜(20)上绘制规定的图案,并将该膜显影,漂洗和干燥(S 300)。 然后,通过溅射在基板(10)上依次形成诸如铬,然后金属的金属(S 400)。 并且,从基板(10)的表面除去过量的抗蚀剂材料(S 500),从而完成金属纳米棒阵列(40)。 金属纳米棒阵列(40)具有这样的结构,其中许多具有精确控制的尺寸的金属纳米棒以恒定的细微间隔并且沿着一个轴向对齐在基底(10)上。
    • 7. 发明授权
    • Metallic structure and photodetector
    • 金属结构和光电探测器
    • US08236421B2
    • 2012-08-07
    • US13179168
    • 2011-07-08
    • Kosei UenoHiroaki MisawaDai OhnishiTakui SakaguchiYoichi Mugino
    • Kosei UenoHiroaki MisawaDai OhnishiTakui SakaguchiYoichi Mugino
    • B32B5/66
    • G01J1/02B22F1/0018B22F1/0096B22F2001/0037B82Y30/00C22C5/02Y10T428/2982Y10T428/2991Y10T428/2993Y10T428/2995Y10T428/2996Y10T428/2998
    • In a metallic structure including a metallic nano-chain with plasmon resonance absorption, a metallic nanoparticle forming the metallic nano-chain is formed in a circular, triangle, or rhomboid shape. The wavelength selectivity can be increased also by forming a closed region by mutually linking all of metallic nanoparticles that are mutually linked with bottlenecks. In a photodetector, a photodetection unit including a current detection probe, a nano-chain unit, and a current detection probe is arranged on a substrate. The nano-chain unit is a metallic structure with plasmon resonance absorption, where metallic nanoparticles are mutually linked with bottlenecks. Each current detection probe has a corner whose tip is formed with a predetermined angle, and this corner is arranged to face the tip of the nano-chain unit, i.e., a corner of the metallic nanoparticle. Photodetection with high wavelength selectivity is performed based on a change in the initial voltage of the current-voltage characteristic.
    • 在包括具有等离子体共振吸收的金属纳米链的金属结构中,形成金属纳米链的金属纳米颗粒形成为圆形,三角形或菱形。 波长选择性也可以通过相互连接与瓶颈相互连接的所有金属纳米颗粒形成闭合区域来增加。 在光电检测器中,在基板上设置包括电流检测探针,纳米链单元和电流检测探针的光检测单元。 纳米链单元是具有等离子体共振吸收的金属结构,其中金属纳米颗粒与瓶颈相互联系。 每个电流检测探针具有尖端以预定角度形成的角部,并且该角部被布置成面对纳米链单元的尖端,即金属纳米颗粒的角部。 基于电流 - 电压特性的初始电压的变化来执行具有高波长选择性的光检测。
    • 8. 发明申请
    • METALLIC STRUCTURE AND PHOTODETECTOR
    • 金属结构和光电转换器
    • US20110266414A1
    • 2011-11-03
    • US13179168
    • 2011-07-08
    • Kosei UENOHiroaki MisawaDai OhnishiTakui SakaguchiYoichi Mugino
    • Kosei UENOHiroaki MisawaDai OhnishiTakui SakaguchiYoichi Mugino
    • H01J40/00B82Y20/00
    • G01J1/02B22F1/0018B22F1/0096B22F2001/0037B82Y30/00C22C5/02Y10T428/2982Y10T428/2991Y10T428/2993Y10T428/2995Y10T428/2996Y10T428/2998
    • In a metallic structure including a metallic nano-chain with plasmon resonance absorption, a metallic nanoparticle forming the metallic nano-chain is formed in a circular, triangle, or rhomboid shape. The wavelength selectivity can be increased also by forming a closed region by mutually linking all of metallic nanoparticles that are mutually linked with bottlenecks. In a photodetector, a photodetection unit including a current detection probe, a nano-chain unit, and a current detection probe is arranged on a substrate. The nano-chain unit is a metallic structure with plasmon resonance absorption, where metallic nanoparticles are mutually linked with bottlenecks. Each current detection probe has a corner whose tip is formed with a predetermined angle, and this corner is arranged to face the tip of the nano-chain unit, i.e., a corner of the metallic nanoparticle. Photodetection with high wavelength selectivity is performed based on a change in the initial voltage of the current-voltage characteristic.
    • 在包括具有等离子体共振吸收的金属纳米链的金属结构中,形成金属纳米链的金属纳米颗粒形成为圆形,三角形或菱形。 波长选择性也可以通过相互连接与瓶颈相互连接的所有金属纳米颗粒形成闭合区域来增加。 在光电检测器中,在基板上设置包括电流检测探针,纳米链单元和电流检测探针的光检测单元。 纳米链单元是具有等离子体共振吸收的金属结构,其中金属纳米颗粒与瓶颈相互联系。 每个电流检测探针具有尖端以预定角度形成的角部,并且该角部布置成面对纳米链单元的尖端,即金属纳米颗粒的角部。 基于电流 - 电压特性的初始电压的变化来执行具有高波长选择性的光检测。
    • 9. 发明授权
    • Plasmon resonance detector
    • 等离子体共振检测器
    • US08047713B2
    • 2011-11-01
    • US12318109
    • 2008-12-22
    • Kosei UenoHiroaki MisawaDai OhnishiTakui SakaguchiYoichi Mugino
    • Kosei UenoHiroaki MisawaDai OhnishiTakui SakaguchiYoichi Mugino
    • G01K7/00
    • G01J5/20G01J5/02G01J5/023G01J5/08G01J5/0853
    • Provided is a plasmon resonance detector that can detect temperature change in optical devices, in which the metal structure having plasmon resonance absorption is used for the optical devices. A diode formed of a conductive substrate, an n-type semiconductor layer, an i-type semiconductor layer, a p-type semiconductor layer, an n electrode (negative electrode), a p electrode (positive electrode), an insulating film, or the like is used as a semiconductor device whose resistance value changes in accordance with temperature change. A nanochain formed by connecting a plurality of metal nanoparticles is disposed on this diode. When the nanochain is irradiated with light, the nanochain generates heat. The heat generated in the nanochain is conducted to the diode. The resistance value of the diode changes in accordance with temperature change, and thus this change is read, a temperature or an amount of heat generation of the nanochain is measured, and existence and strength of the plasmon resonance are detected.
    • 提供了一种等离子体共振检测器,其可以检测具有等离子体共振吸收的金属结构用于光学器件的光学器件中的温度变化。 由导电性基板,n型半导体层,i型半导体层,p型半导体层,n电极(负极),ap电极(正极),绝缘膜或 类似物被用作其电阻值根据温度变化而变化的半导体器件。 通过连接多个金属纳米颗粒形成的纳米链设置在该二极管上。 当纳米链被光照射时,纳米链产生热量。 在纳米链中产生的热量传导到二极管。 二极管的电阻值根据温度变化而变化,因此读取该变化,测量纳米链的温度或发热量,并检测等离子体共振的存在和强度。
    • 10. 发明授权
    • Metal structure and production method therefor
    • 金属结构及其生产方法
    • US07824761B2
    • 2010-11-02
    • US11884614
    • 2006-02-16
    • Hiroaki MisawaKosei UenoYasuyuki TsuboiKeiji Sasaki
    • Hiroaki MisawaKosei UenoYasuyuki TsuboiKeiji Sasaki
    • B32B9/00
    • G02B5/3058B82Y20/00G01N21/554G02B5/008Y10T428/24917Y10T428/25
    • A metal structure capable of significantly increasing wavelength selectivity and polarization electivity for an incident light, and a production method thereof. First, a solid transparent substrate (glass substrate) (10) is cleaned and dried (S100). The surface of the substrate (10) is spin-coated with a positive electron lithography-use resist solution and then baked, and the resist solution is removed to form a resist thin film (20) on the substrate (10) (S200). A specified pattern is drawn on the resist thin film (20) with an electron beam, and the film is developed, rinsed and dried (S300). Then, metals such as chromium and then gold are formed sequentially on the substrate (10) by sputtering (S400). And, excessive resist materials are removed from the surface of the substrate (10) (S500), whereby metal nano-rod array (40) is completed. The metal nano-rod array (40) has a structure in which many metal nano-rods having their sizes precisely controlled are integrated on the substrate (10) at constant fine intervals and with their directions aligned in one axial direction.
    • 能够显着提高入射光的波长选择性和极化电位的金属结构体及其制造方法。 首先,清洁并干燥固体透明基板(玻璃基板)(10)(S100)。 用正电子光刻用抗蚀剂溶液旋涂基板(10)的表面,然后烘烤,除去抗蚀剂溶液,以在基板(10)上形成抗蚀剂薄膜(20)(S200)。 用电子束在抗蚀剂薄膜(20)上绘制规定的图案,并将该膜显影,漂洗和干燥(S300)。 然后,通过溅射在基板(10)上依次形成诸如铬,然后金的金属(S400)。 并且,从基板(10)的表面除去过量的抗蚀剂材料(S500),由此完成金属纳米棒阵列(40)。 金属纳米棒阵列(40)具有这样的结构,其中许多具有精确控制的尺寸的金属纳米棒以恒定的精细间隔并且沿着一个轴向对齐而集成在基板(10)上。