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1. 发明授权

US06943995B2 Continuous free layer spin valve sensor with patterned exchange underlayer stabilization 失效
标题翻译：连续自由层旋转阀传感器，具有图案交换底层稳定性
公开(公告)号：US06943995B2
公开(公告)日：2005-09-13
申请号：US10616724
申请日：2003-07-10
申请人： Tai Min , Po-Kang Wang , Moris Musa Dovek
发明人： Tai Min , Po-Kang Wang , Moris Musa Dovek
IPC分类号： G01R33/09 , G11B5/39 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , Y10T29/49032 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： To form a spin valve device, start by forming a gap layer. Form a buffer layer with a layer of refractory material on the buffer layer. Form patterned underlayers including a magnetic material for providing trackwidth and longitudinal bias on the buffer layer comprising either a lower antiferromagnetic layer stacked with a ferromagnetic layer or a Cr layer stacked with a permanent magnetic layer. Form an inwardly tapered depression in the patterned underlayers down to the buffer layer by either ion milling through a mask or a stencil lift off technique. Form layers covering the patterned underlayers that cover the inwardly tapered depression. Form free, pinned, spacer and antiferromagnetic layers. Form conductors either on a surface of the antiferromagnetic layer aside from the depression or between the buffer layer and the patterned underlayers.
摘要翻译：为了形成自旋阀装置，通过形成间隙层开始。在缓冲层上形成具有耐火材料层的缓冲层。包括用于在缓冲层上提供轨道宽度和纵向偏压的磁性材料的形式图案化底层，包括堆叠有铁磁层的下反铁磁层或与永久磁性层堆叠的Cr层。通过离子铣削通过掩模或模板剥离技术，在图案化的底层中形成向下渐变的凹陷，直到缓冲层。覆盖图案化底层的覆盖向内倾斜的凹陷的成形层。无形，固定，间隔和反铁磁层。在反铁磁层的表面上，在凹陷之外或缓冲层和图案化的底层之间形成导体。

2. 发明授权

US06606782B2 Method of forming a continuous free layer spin valve sensor with patterned exchange underlayer stabilization 失效
标题翻译：形成具有图案交换底层稳定性的连续自由层自旋阀传感器的方法
公开(公告)号：US06606782B2
公开(公告)日：2003-08-19
申请号：US10104778
申请日：2002-03-22
申请人： Tai Min , Po-Kang Wang , Moris Musa Dovek
发明人： Tai Min , Po-Kang Wang , Moris Musa Dovek
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3932 , Y10T29/49032 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： To form a spin valve device, start by forming a gap layer. Form a buffer layer with a layer of refractory material on the buffer layer. Form patterned underlayers including a magnetic material for providing trackwidth and longitudinal bias on the buffer layer comprising either a lower antiferromagnetic layer stacked with a ferromagnetic layer or a Cr layer stacked with a permanent magnetic layer. Form an inwardly tapered depression in the patterned underlayers down to the buffer layer by either ion milling through a mask or a stencil lift off technique. Form layers covering the patterned underlayers that cover the inwardly tapered depression. Form free, pinned, spacer and antiferromagnetic layers. Form conductors either on a surface of the antiferromagnetic layer aside from the depression or between the buffer layer and the patterned underlayers.
摘要翻译：为了形成自旋阀装置，通过形成间隙层开始。在缓冲层上形成具有耐火材料层的缓冲层。包括用于在缓冲层上提供轨道宽度和纵向偏压的磁性材料的形式图案化底层包括堆叠有铁磁层的下反铁磁层或者与永久磁性层堆叠的Cr层。通过离子铣削通过掩模或模板剥离技术，在图案化的底层中形成向下渐变的凹陷，直到缓冲层。覆盖图案化底层的覆盖向内倾斜的凹陷的成形层。无形，固定，间隔和反铁磁层。在反铁磁层的表面上，在凹陷之外或缓冲层和图案化的底层之间形成导体。

3. 发明授权

US08422287B2 Pulse field assisted spin momentum transfer MRAM design 有权
标题翻译：脉冲场辅助自旋动量转移MRAM设计
公开(公告)号：US08422287B2
公开(公告)日：2013-04-16
申请号：US12807611
申请日：2010-09-09
申请人： Tai Min , Qiang Chen , Po Kang Wang
发明人： Tai Min , Qiang Chen , Po Kang Wang
IPC分类号： G11C11/14
CPC分类号： G11C11/161 , G11C11/1659 , G11C11/1675
摘要： An MRAM array structure and a method of its operation that is not subject to accidental writing on half-selected elements. Each element of the MRAM is an MTJ (magnetic tunneling junction) cell operating in accord with an STT (spin torque transfer) scheme for changing its free layer magnetization state and each cell is patterned to have a C-shape in the horizontal plane. The cell thereby operates by C-mode switching to provide stability against accidental writing by half-selection. During operation, switching of a cell's magnetization is accomplished with the assist of the pulsed magnetic fields of additional word lines that are formed either orthogonal to or parallel to the existing bit lines and that can carry currents in either direction as required to provide the assist.
摘要翻译： MRAM阵列结构及其操作方法，不会在半选择元素上偶然写入。 MRAM的每个元件是根据用于改变其自由层磁化状态的STT（自旋转矩传递）方案操作的MTJ（磁性隧道结）单元，并且每个单元被图案化以在水平面中具有C形。因此，电池通过C模式切换来操作，以通过半选择提供对意外写入的稳定性。在操作期间，通过与现有位线正交或平行的附加字线的脉冲磁场的帮助来实现电池的磁化的切换，并且可以根据需要在任一方向上承载电流以提供辅助。

4. 发明授权

US07994596B2 Magnetic tunneling junction film structure with process determined in-plane magnetic anisotropy 有权
标题翻译：磁隧道结膜结构与工艺确定面内磁各向异性
公开(公告)号：US07994596B2
公开(公告)日：2011-08-09
申请号：US11515533
申请日：2006-09-05
申请人： Tai Min , Cheng Horng , Po Kang Wang
发明人： Tai Min , Cheng Horng , Po Kang Wang
IPC分类号： H01L29/82 , G11C11/15
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3218 , H01F10/3272 , H01F41/307 , H01L43/12
摘要： An MTJ memory cell and/or an array of such cells is provided wherein each such cell has a small circular horizontal cross-section of 1.0 microns or less in diameter and wherein the ferromagnetic free layer of each such cell has a magnetic anisotropy produced by a magnetic coupling with a thin antiferromagnetic layer that is formed on the free layer. The MTJ memory cell so provided is far less sensitive to shape irregularities and edge defects than cells of the prior art.
摘要翻译：提供MTJ存储器单元和/或这种单元的阵列，其中每个这样的单元具有直径为1.0微米或更小的小的圆形水平横截面，并且其中每个这样的单元的铁磁性自由层具有由与在自由层上形成的薄的反铁磁层的磁耦合。如此提供的MTJ存储单元对于形状不规则和边缘缺陷的敏感性远低于现有技术的单元。

5. 发明申请

US20080253178A1 MRAM with enhanced programming margin 有权
标题翻译： MRAM具有增强的编程余量
公开(公告)号：US20080253178A1
公开(公告)日：2008-10-16
申请号：US11787330
申请日：2007-04-16
申请人： Tai Min , Po Kang Wang
发明人： Tai Min , Po Kang Wang
IPC分类号： G11C11/02 , H01L21/00
CPC分类号： G11C11/16
摘要： An MRAM that is not subject to accidental writing of half-selected memory elements is described, together with a method for its manufacture. The key features of this MRAM are a C-shaped memory element used in conjunction with a segmented bit line architecture.
摘要翻译：描述了不会偶然写入半选择的存储元件的MRAM及其制造方法。该MRAM的主要特征是与分段位线结构一起使用的C形存储元件。

6. 发明授权

US07345911B2 Multi-state thermally assisted storage 有权
标题翻译：多状态热辅助存储
公开(公告)号：US07345911B2
公开(公告)日：2008-03-18
申请号：US11353326
申请日：2006-02-14
申请人： Tai Min , Po-Kang Wang
发明人： Tai Min , Po-Kang Wang
IPC分类号： G11C11/00
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/161 , G11C11/1675 , G11C11/5607
摘要： A random access memory cell is described which is capable of storing multiple information states in a single physical bit. The basic structure combines a conventional MTJ with a reference stack that is magnetostatically coupled to the MTJ. The MTJ is read in the usual way but data is written and stored in the reference stack. Through use of two bit lines, the direction of magnetization of the free layer can be changed in small increments each unique direction representing a different information state.
摘要翻译：描述了能够在单个物理位中存储多个信息状态的随机存取存储器单元。基本结构将传统的MTJ与静磁耦合到MTJ的参考堆叠相结合。 MTJ以通常的方式读取，但是数据被写入并存储在参考堆栈中。通过使用两个位线，自由层的磁化方向可以以小的增量改变每个独特的方向代表不同的信息状态。

7. 发明授权

US07291892B2 Magnetic random access memory designs with controlled magnetic switching mechanism 失效
标题翻译：磁性随机存取存储器设计采用受控磁切换机制
公开(公告)号：US07291892B2
公开(公告)日：2007-11-06
申请号：US11386317
申请日：2006-03-22
申请人： Tai Min , Po Kang Wang
发明人： Tai Min , Po Kang Wang
IPC分类号： H01L43/00
CPC分类号： G11C11/16
摘要： An MRAM array is formed of MTJ cells shaped so as to have their narrowest dimension at the middle of the cell. A preferred embodiment forms the cell into the shape of a kidney or a peanut. Such a shape provides each cell with an artificial nucleation site at the narrowest dimension, where an applied switching field can switch the magnetization of the cell in manner that is both efficient and uniform across the array.
摘要翻译： MRAM阵列由MTJ单元形成，其形状使得其在细胞中间具有最窄的尺寸。优选的实施方案将细胞形成为肾或花生的形状。这种形状为每个单元提供了最窄尺寸的人造成核位点，其中施加的开关场可以以跨阵列有效和均匀的方式切换电池的磁化。

8. 发明授权

US06929957B2 Magnetic random access memory designs with patterned and stabilized magnetic shields 失效
标题翻译：具有图案化和稳定磁屏蔽的磁性随机存取存储器设计
公开(公告)号：US06929957B2
公开(公告)日：2005-08-16
申请号：US10661039
申请日：2003-09-12
申请人： Tai Min , Po Kang Wang
发明人： Tai Min , Po Kang Wang
IPC分类号： G11C11/15 , H01F10/16 , H01F10/32 , H01L21/00 , H01L21/8246 , H01L27/105 , H01L27/115 , H01L27/22 , H01L29/78 , H01L43/08 , H01L43/10 , H01L43/12
CPC分类号： G11C11/15 , H01L27/222 , H01L43/08 , H01L43/12
摘要： A magnetic tunneling junction (MTJ) memory cell and an MRAM array of such cells, is shielded by magnetic shields of ferromagnetic material or by ferromagnetic shields that are stabilized by patterned layers of antiferromagnetic material or permanent magnetic material. The ferromagnetic portions of the shields surround the MTJ cells substantially conformally and thereby can compensate the poles of the free layers of MTJ cells of various geometric cross-sectional shapes and also protect the cells from the adverse effects of extraneous fields. The additional antiferromagnetic and permanent magnetic materials stabilize the shields by exchange or direct coupling.
摘要翻译：磁性隧道结（MTJ）存储单元和这样的单元的MRAM阵列被铁磁材料的磁屏蔽或由反铁磁材料或永久磁性材料的图案化层稳定的铁磁屏蔽屏蔽。屏蔽体的铁磁部分基本上保形地围绕MTJ电池，从而可以补偿各种几何横截面形状的MTJ电池的自由层的极点，并且还保护电池免受外部场的不利影响。额外的反铁磁和永磁材料通过交换或直接耦合来稳定屏蔽。

9. 发明授权

US08497559B2 MRAM with means of controlling magnetic anisotropy 有权
标题翻译： MRAM具有控制磁各向异性的方法
公开(公告)号：US08497559B2
公开(公告)日：2013-07-30
申请号：US11973751
申请日：2007-10-10
申请人： Tai Min , Po Kang Wang
发明人： Tai Min , Po Kang Wang
IPC分类号： H01L29/82 , G11C11/00
CPC分类号： H01L43/08 , G11C11/1675 , H01L43/12
摘要： A CPP MTJ MRAM unit cell utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The strength of the switching field, Hs of the cell is controlled by the magnetic anisotropy of the cell which, in turn, is controlled by a combination of the shape anisotropy and the stress and magnetostriction of the cell free layer. The coefficient of magnetostriction of the free layer can be adjusted by methods such as adding Nb or Hf to alloys of Ni, Fe, Co and B or by forming the free layer as a lamination of layers having different values of their coefficients of magnetostriction. Thus, by tuning the coefficient of magnetostriction of the cell free layer it is possible to produce a switching field of sufficient magnitude to render the cell thermally stable while maintaining a desirable switching current.
摘要翻译： CPP MTJ MRAM单元利用自旋角动量的传递作为改变自由层的磁矩方向的机制。开关场的强度，电池的Hs由电池的磁各向异性控制，电池的磁各向异性又由形状各向异性和无电解层的应力和磁致伸缩的组合控制。自由层的磁致伸缩系数可以通过添加Nb，Hf等Ni，Fe，Co，B的合金的方法来进行，也可以通过形成自由层作为其磁致伸缩系数不同的层的叠层来进行。因此，通过调谐无电解层的磁致伸缩系数，可以产生足够大的开关场，使电池热稳定，同时保持理想的开关电流。

10. 发明申请

US20120058574A1 MRAM with storage layer and super-paramagnetic sensing layer 有权
公开(公告)号：US20120058574A1
公开(公告)日：2012-03-08
申请号：US13373127
申请日：2011-11-04
申请人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
发明人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
IPC分类号： H01L21/02
CPC分类号： H01L43/08
摘要： An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.

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