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1. 发明授权

US07994596B2 Magnetic tunneling junction film structure with process determined in-plane magnetic anisotropy 有权
标题翻译：磁隧道结膜结构与工艺确定面内磁各向异性
公开(公告)号：US07994596B2
公开(公告)日：2011-08-09
申请号：US11515533
申请日：2006-09-05
申请人： Tai Min , Cheng Horng , Po Kang Wang
发明人： Tai Min , Cheng Horng , Po Kang Wang
IPC分类号： H01L29/82 , G11C11/15
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3218 , H01F10/3272 , H01F41/307 , H01L43/12
摘要： An MTJ memory cell and/or an array of such cells is provided wherein each such cell has a small circular horizontal cross-section of 1.0 microns or less in diameter and wherein the ferromagnetic free layer of each such cell has a magnetic anisotropy produced by a magnetic coupling with a thin antiferromagnetic layer that is formed on the free layer. The MTJ memory cell so provided is far less sensitive to shape irregularities and edge defects than cells of the prior art.
摘要翻译：提供MTJ存储器单元和/或这种单元的阵列，其中每个这样的单元具有直径为1.0微米或更小的小的圆形水平横截面，并且其中每个这样的单元的铁磁性自由层具有由与在自由层上形成的薄的反铁磁层的磁耦合。如此提供的MTJ存储单元对于形状不规则和边缘缺陷的敏感性远低于现有技术的单元。

2. 发明授权

US07696548B2 MRAM with super-paramagnetic sensing layer 有权
标题翻译： MRAM具有超顺磁感应层
公开(公告)号：US07696548B2
公开(公告)日：2010-04-13
申请号：US11200380
申请日：2005-08-09
申请人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
发明人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
IPC分类号： H01L29/94
CPC分类号： H01L43/08
摘要： An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.
摘要翻译：公开了一种MRAM，其具有由沿第一轴的磁化方向的铁磁层，超顺磁性（SP）自由层和在它们之间形成的绝缘层构成的MTJ。 SP自由层具有在没有外部场的情况下基本为零的残余磁化，并且其中磁化大致与外部场成正比，直到达到饱和值。在一个实施例中，单独的存储层形成在MTJ的上方，下方或附近，并且具有沿其易于轴线平行于第一轴线的磁化方向的单轴各向异性。在第二实施例中，存储层形成在MTJ内的非磁性导电间隔层上，并与MTJ同时构图。 SP自由层可以是CoFeB的多层或层压层。存储层可以具有SyAP配置和层压结构。

3. 发明申请

US20070034919A1 MRAM with super-paramagnetic sensing layer 有权
标题翻译： MRAM具有超顺磁感应层
公开(公告)号：US20070034919A1
公开(公告)日：2007-02-15
申请号：US11200380
申请日：2005-08-09
申请人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
发明人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
IPC分类号： H01L29/94
CPC分类号： H01L43/08
摘要： An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.
摘要翻译：公开了一种MRAM，其具有由沿第一轴的磁化方向的铁磁层，超顺磁性（SP）自由层和在它们之间形成的绝缘层构成的MTJ。 SP自由层具有在没有外部场的情况下基本为零的残余磁化，并且其中磁化大致与外部场成正比，直到达到饱和值。在一个实施例中，单独的存储层形成在MTJ的上方，下方或附近，并且具有沿其易于轴线平行于第一轴线的磁化方向的单轴各向异性。在第二实施例中，存储层形成在MTJ内的非磁性导电间隔层上，并与MTJ同时构图。 SP自由层可以是CoFeB的多层或层压层。存储层可以具有SyAP配置和层压结构。

4. 发明授权

US08178363B2 MRAM with storage layer and super-paramagnetic sensing layer 有权
标题翻译： MRAM与存储层和超顺磁感应层
公开(公告)号：US08178363B2
公开(公告)日：2012-05-15
申请号：US13373127
申请日：2011-11-04
申请人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
发明人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
IPC分类号： H01L21/336 , H01L21/8246
CPC分类号： H01L43/08
摘要： An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.
摘要翻译：公开了一种MRAM，其具有由沿第一轴的磁化方向的铁磁层，超顺磁性（SP）自由层和在它们之间形成的绝缘层构成的MTJ。 SP自由层具有在没有外部场的情况下基本为零的残余磁化，并且其中磁化大致与外部场成正比，直到达到饱和值。在一个实施例中，单独的存储层形成在MTJ的上方，下方或附近，并且具有沿其易于轴线平行于第一轴线的磁化方向的单轴各向异性。在第二实施例中，存储层形成在MTJ内的非磁性导电间隔层上，并与MTJ同时构图。 SP自由层可以是CoFeB的多层或层压层。存储层可以具有SyAP配置和层压结构。

5. 发明授权

US08062909B2 MRAM with storage layer and super-paramagnetic sensing layer 有权
公开(公告)号：US08062909B2
公开(公告)日：2011-11-22
申请号：US12661365
申请日：2010-03-16
申请人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
发明人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
IPC分类号： H01L21/336 , H01L21/8246
CPC分类号： H01L43/08
摘要： An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.

6. 发明授权

US08039885B2 MRAM with storage layer and super-paramagnetic sensing layer 有权
标题翻译： MRAM与存储层和超顺磁感应层
公开(公告)号：US08039885B2
公开(公告)日：2011-10-18
申请号：US12661345
申请日：2010-03-16
申请人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
发明人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
IPC分类号： H01L29/94
CPC分类号： H01L43/08
摘要： An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.
摘要翻译：公开了一种MRAM，其具有由沿第一轴的磁化方向的铁磁层，超顺磁性（SP）自由层和在它们之间形成的绝缘层构成的MTJ。 SP自由层具有在没有外部场的情况下基本为零的残余磁化，并且其中磁化大致与外部场成正比，直到达到饱和值。在一个实施例中，单独的存储层形成在MTJ的上方，下方或附近，并且具有沿其易于轴线平行于第一轴线的磁化方向的单轴各向异性。在第二实施例中，存储层形成在MTJ内的非磁性导电间隔层上，并与MTJ同时构图。 SP自由层可以是CoFeB的多层或层压层。存储层可以具有SyAP配置和层压结构。

7. 发明授权

US07105372B2 Magnetic tunneling junction film structure with process determined in-plane magnetic anisotropy 有权
标题翻译：磁隧道结膜结构与工艺确定面内磁各向异性
公开(公告)号：US07105372B2
公开(公告)日：2006-09-12
申请号：US10761003
申请日：2004-01-20
申请人： Tai Min , Cheng Horng , Po Kang Wang
发明人： Tai Min , Cheng Horng , Po Kang Wang
IPC分类号： H01L21/00
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3218 , H01F10/3272 , H01F41/307 , H01L43/12
摘要： A method of forming an MTJ memory cell and/or an array of such cells is provided wherein each such cell has a small circular horizontal cross-section of 1.0 microns or less in diameter and wherein the ferromagnetic free layer of each such cell has a magnetic anisotropy produced by a magnetic coupling with a thin antiferromagnetic layer that is formed on the free layer. The MTJ memory cell so provided is far less sensitive to shape irregularities and edge defects than cells of the prior art.
摘要翻译：提供了形成MTJ存储器单元和/或这种单元阵列的方法，其中每个这样的单元具有直径为1.0微米或更小的小的圆形水平横截面，并且其中每个这样的单元的铁磁自由层具有磁性通过与形成在自由层上的薄的反铁磁层的磁耦合产生的各向异性。如此提供的MTJ存储单元对于形状不规则和边缘缺陷的敏感性远低于现有技术的单元。

8. 发明申请

US20120058574A1 MRAM with storage layer and super-paramagnetic sensing layer 有权
公开(公告)号：US20120058574A1
公开(公告)日：2012-03-08
申请号：US13373127
申请日：2011-11-04
申请人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
发明人： Po-Kang Wang , Yimin Guo , Cheng Horng , Tai Min , Ru-Ying Tong
IPC分类号： H01L21/02
CPC分类号： H01L43/08
摘要： An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.

9. 发明申请

US20110284977A1 Array of magnetic tunneling junction film structures with process determined in-plane magnetic anisotropy 有权
标题翻译：具有工艺确定的面内磁各向异性的磁隧道结膜结构阵列
公开(公告)号：US20110284977A1
公开(公告)日：2011-11-24
申请号：US13136194
申请日：2011-07-26
申请人： Tai Min , Cheng Horng , Po Kang Wang
发明人： Tai Min , Cheng Horng , Po Kang Wang
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3218 , H01F10/3272 , H01F41/307 , H01L43/12
摘要： An MRAM array of MTJ memory cells is provided wherein each such cell is a layered MTJ structure located at an intersection of a word and bit line and has a small circular horizontal cross-section of 1.0 microns or less in diameter and wherein the ferromagnetic free layer of each such cell has a magnetic anisotropy produced by a magnetic coupling with a thin antiferromagnetic layer that is formed on the free layer. The array of MTJ memory cells so provided is far less sensitive to shape irregularities and edge defects of individual cells than arrays of the prior art.
摘要翻译：提供了MTJ存储器单元的MRAM阵列，其中每个这样的单元是位于字和位线的交叉点处的分层MTJ结构，并且具有直径为1.0微米或更小的小的圆形水平横截面，并且其中铁磁自由层每个这样的电池具有由形成在自由层上的薄的反铁磁性层的磁耦合产生的磁各向异性。如此提供的MTJ存储器单元的阵列比现有技术的阵列对单个单元的形状不规则和边缘缺陷的敏感性差。

10. 发明授权

US08525280B2 Array of magnetic tunneling junction film structures with process determined in-plane magnetic anisotropy 有权
标题翻译：具有工艺确定的面内磁各向异性的磁隧道结膜结构阵列
公开(公告)号：US08525280B2
公开(公告)日：2013-09-03
申请号：US13136194
申请日：2011-07-26
申请人： Tai Min , Cheng Horng , Po Kang Wang
发明人： Tai Min , Cheng Horng , Po Kang Wang
IPC分类号： H01L29/82 , G11C11/15
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3218 , H01F10/3272 , H01F41/307 , H01L43/12
摘要： An MRAM array of MTJ memory cells is provided wherein each such cell is a layered MTJ structure located at an intersection of a word and bit line and has a small circular horizontal cross-section of 1.0 microns or less in diameter and wherein the ferromagnetic free layer of each such cell has a magnetic anisotropy produced by a magnetic coupling with a thin antiferromagnetic layer that is formed on the free layer. The array of MTJ memory cells so provided is far less sensitive to shape irregularities and edge defects of individual cells than arrays of the prior art.
摘要翻译：提供了MTJ存储器单元的MRAM阵列，其中每个这样的单元是位于字和位线的交叉点处的分层MTJ结构，并且具有直径为1.0微米或更小的小的圆形水平横截面，并且其中铁磁自由层每个这样的电池具有由形成在自由层上的薄的反铁磁性层的磁耦合产生的磁各向异性。如此提供的MTJ存储器单元的阵列比现有技术的阵列对单个单元的形状不规则和边缘缺陷的敏感性差。

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