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    • 1. 发明申请
    • Pulse field assisted spin momentum transfer MRAM design
    • 脉冲场辅助自旋动量转移MRAM设计
    • US20120063214A1
    • 2012-03-15
    • US12807611
    • 2010-09-09
    • Tai MinQiang ChenPo Kang Wang
    • Tai MinQiang ChenPo Kang Wang
    • G11C11/00
    • G11C11/161G11C11/1659G11C11/1675
    • An MRAM array structure and a method of its operation that is not subject to accidental writing on half-selected elements. Each element of the MRAM is an MTJ (magnetic tunneling junction) cell operating in accord with an STT (spin torque transfer) scheme for changing its free layer magnetization state and each cell is patterned to have a C-shape in the horizontal plane. The cell thereby operates by C-mode switching to provide stability against accidental writing by half-selection. During operation, switching of a cell's magnetization is accomplished with the assist of the pulsed magnetic fields of additional word lines that are formed either orthogonal to or parallel to the existing bit lines and that can carry currents in either direction as required to provide the assist.
    • MRAM阵列结构及其操作方法,不会在半选择元素上偶然写入。 MRAM的每个元件是根据用于改变其自由层磁化状态的STT(自旋转矩传递)方案操作的MTJ(磁性隧道结)单元,并且每个单元被图案化以在水平面中具有C形。 因此,电池通过C模式切换来操作,以通过半选择提供对意外写入的稳定性。 在操作期间,通过与现有位线正交或平行的附加字线的脉冲磁场的帮助来实现电池的磁化的切换,并且可以根据需要在任一方向上承载电流以提供辅助。
    • 2. 发明授权
    • Pulse field assisted spin momentum transfer MRAM design
    • 脉冲场辅助自旋动量转移MRAM设计
    • US08422287B2
    • 2013-04-16
    • US12807611
    • 2010-09-09
    • Tai MinQiang ChenPo Kang Wang
    • Tai MinQiang ChenPo Kang Wang
    • G11C11/14
    • G11C11/161G11C11/1659G11C11/1675
    • An MRAM array structure and a method of its operation that is not subject to accidental writing on half-selected elements. Each element of the MRAM is an MTJ (magnetic tunneling junction) cell operating in accord with an STT (spin torque transfer) scheme for changing its free layer magnetization state and each cell is patterned to have a C-shape in the horizontal plane. The cell thereby operates by C-mode switching to provide stability against accidental writing by half-selection. During operation, switching of a cell's magnetization is accomplished with the assist of the pulsed magnetic fields of additional word lines that are formed either orthogonal to or parallel to the existing bit lines and that can carry currents in either direction as required to provide the assist.
    • MRAM阵列结构及其操作方法,不会在半选择元素上偶然写入。 MRAM的每个元件是根据用于改变其自由层磁化状态的STT(自旋转矩传递)方案操作的MTJ(磁性隧道结)单元,并且每个单元被图案化以在水平面中具有C形。 因此,电池通过C模式切换来操作,以通过半选择提供对意外写入的稳定性。 在操作期间,通过与现有位线正交或平行的附加字线的脉冲磁场的帮助来实现电池的磁化的切换,并且可以根据需要在任一方向上承载电流以提供辅助。