专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08169816B2 Fabrication methods of partial cladded write line to enhance write margin for magnetic random access memory 有权
标题翻译：部分包层写入线的设计和制造方法，以增强磁随机存取存储器的写入裕度
公开(公告)号：US08169816B2
公开(公告)日：2012-05-01
申请号：US12584952
申请日：2009-09-15
申请人： Tai Min , Wai-Ming J. Kan , David Heim , Chyu Jiuh Torng
发明人： Tai Min , Wai-Ming J. Kan , David Heim , Chyu Jiuh Torng
IPC分类号： G11C11/00
CPC分类号： H01L27/228 , B82Y25/00 , G11C11/16 , H01F10/3254 , H01F10/3263 , H01L43/08 , H01L43/12
摘要： A cladding structure for a conductive line used to switch a free layer in a MTJ is disclosed and includes two cladding sidewalls on two sides of the conductive line, a top cladding portion on a side of the conductive line facing away from the MTJ, and a highly conductive, non-magnetic spacing control layer formed between the MTJ and conductive line. The spacing control layer has a thickness of 0.02 to 0.12 microns to maintain the distance separating free layer and conductive line between 0.03 and 0.15 microns. The spacing control layer is aligned parallel to the conductive line and contacts a plurality of MTJ elements in a row of MRAM cells. Half-select error problems are avoided while maintaining high write efficiency. A spacing control layer may be formed between a word line and a bottom electrode in a top pinned layer or dual pinned layer configuration.
摘要翻译：公开了用于切换MTJ中的自由层的用于导电线的包层结构，并且在导电线的两侧包括两个包层侧壁，在远离MTJ的导电线侧的顶部包层部分，以及在MTJ和导线之间形成的高导电性，非磁性间隔控制层。间隔控制层的厚度为0.02至0.12微米，以保持分离自由层和导电线之间的距离在0.03和0.15微米之间。间隔控制层平行于导线对准，并接触一排MRAM单元中的多个MTJ元件。避免半选择错误问题，同时保持较高的写入效率。间隔控制层可以形成在顶部钉扎层或双重钉扎层构造中的字线和底部电极之间。

2. 发明授权

US07885094B2 MRAM with cross-tie magnetization configuration 有权
标题翻译：具有交叉磁化结构的MRAM
公开(公告)号：US07885094B2
公开(公告)日：2011-02-08
申请号：US12150241
申请日：2008-04-25
申请人： Tai Min , David Heim
发明人： Tai Min , David Heim
IPC分类号： G11C11/00
CPC分类号： B82Y25/00 , G11C11/161 , G11C11/1675 , H01F10/325 , H01F10/3254 , Y10S977/935
摘要： The incidence of half-select errors during MRAM programming has been significantly reduced by giving the free layer a shape that approximates an X so that, when the free layer switches, the magnetization in the arms of the X guides the magnetization in the central section (the X's intersection area) causing it to rotate towards the hard axis in two opposing directions. This raises the free layer's switching energy barrier, thereby reducing half-select errors.
摘要翻译： MRAM编程中的半选择误差的发生率通过使自由层接近X的形状而显着降低，使得当自由层切换时，X的臂中的磁化引导中心部分的磁化（ X的交叉区域）使其在两个相对的方向上朝着硬轴旋转。这提高了自由层的开关能量势垒，从而减少了半选择误差。

3. 发明申请

US20090268512A1 MRAM with cross-tie magnetization configuration 有权
标题翻译：具有交叉磁化结构的MRAM
公开(公告)号：US20090268512A1
公开(公告)日：2009-10-29
申请号：US12150241
申请日：2008-04-25
申请人： Tai Min , David Heim
发明人： Tai Min , David Heim
IPC分类号： G11C11/02 , H01F7/00
CPC分类号： B82Y25/00 , G11C11/161 , G11C11/1675 , H01F10/325 , H01F10/3254 , Y10S977/935
摘要： The incidence of half-select errors during MRAM programming has been significantly reduced by giving the free layer a shape that approximates an X so that, when the free layer switches, the magnetization in the arms of the X guides the magnetization in the central section (the X's intersection area) causing it to rotate towards the hard axis in two opposing directions. This raises the free layer's switching energy barrier, thereby reducing half-select errors.
摘要翻译： MRAM编程中的半选择误差的发生率通过使自由层接近X的形状而显着降低，使得当自由层切换时，X的臂中的磁化引导中心部分的磁化（ X的交叉区域）使其在两个相对的方向上朝着硬轴旋转。这提高了自由层的开关能量势垒，从而减少了半选择误差。

4. 发明授权

US08755149B2 Shield designs with internal magnetization control for ATE improvement 有权
标题翻译：屏蔽设计具有内部磁化控制，可提高ATE
公开(公告)号：US08755149B2
公开(公告)日：2014-06-17
申请号：US13620764
申请日：2012-09-15
申请人： Suping Song , Lijie Guan , Tai Min , Yuhui Tang
发明人： Suping Song , Lijie Guan , Tai Min , Yuhui Tang
IPC分类号： G11B5/127
CPC分类号： G11B5/315 , G11B5/1278 , G11B5/3116 , G11B5/3163
摘要： A magnetic recording head is fabricated with a pole tip shielded laterally on its sides by a pair of symmetrically disposed side shields formed of porous heterogeneous material that contains non-magnetic inclusions. The non-magnetic inclusions, when properly incorporated within the magnetic matrix of the shields, promote the formation of flux loops within the shields that have portions that are parallel to the ABS and do not display locally disorganized and dynamic regions of flux during the creation of magnetic transitions within the recording medium by the magnetic pole. These flux loop portions, combine with the magnetic flux emerging from the main pole to create a net writing field that significantly reduces adjacent track erasures (ATE) and wide area erasures (WATE).
摘要翻译：制造磁记录头，其极侧通过由包含非磁性夹杂物的多孔异质材料形成的一对对称设置的侧屏蔽侧向屏蔽。当非磁性夹杂物适当地并入屏蔽体的磁矩阵中时，促进在屏蔽体内形成具有与ABS平行的部分的磁通环，并且在创建过程中不显示局部无组织和动态的磁通区域通过磁极在记录介质内的磁转变。这些磁通回路部分与从主极产生的磁通相结合，形成一个净写入场，显着地减少了相邻轨道擦除（ATE）和广域擦除（WATE）。

5. 发明授权

US08609262B2 Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM application 有权
标题翻译：用于制造自旋转矩（STT）-RAM应用的高性能MTJ装置的结构和方法
公开(公告)号：US08609262B2
公开(公告)日：2013-12-17
申请号：US12460412
申请日：2009-07-17
申请人： Cheng T. Horng , Ru-Ying Tong , Guangli Liu , Robert Beach , Witold Kula , Tai Min
发明人： Cheng T. Horng , Ru-Ying Tong , Guangli Liu , Robert Beach , Witold Kula , Tai Min
IPC分类号： G11B5/706 , H01L43/08 , H01L29/82 , G01R33/09 , G11C11/16
CPC分类号： H01L43/12 , B82Y25/00 , C23C14/3414 , G11C11/16 , G11C11/161 , H01L43/08 , H01L43/10 , Y10T428/1114
摘要： A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by natural oxidation and containing an oxygen surfactant layer to form a more uniform MgO layer and lower breakdown distribution percent. A CoFeB/NCC/CoFeB composite free layer with a middle nanocurrent channel layer minimizes Jc0 while enabling thermal stability, write voltage, read voltage, and Hc values that satisfy 64 Mb design requirements. The NCC layer has RM grains in an insulator matrix where R is Co, Fe, or Ni, and M is a metal such as Si or Al. NCC thickness is maintained around the minimum RM grain size to avoid RM granules not having sufficient diameter to bridge the distance between upper and lower CoFeB layers. A second NCC layer and third CoFeB layer may be included in the free layer or a second NCC layer may be inserted below the Ru capping layer.
摘要翻译：公开了一种STT-RAM MTJ，其具有通过自然氧化形成的MgO隧道势垒，并含有氧表面活性剂层以形成更均匀的MgO层和较低的击穿分布百分比。具有中等纳米通道层的CoFeB / NCC / CoFeB复合自由层使Jc0最小化，同时实现满足64Mb设计要求的热稳定性，写电压，读电压和Hc值。 NCC层在绝缘体基体中具有RM颗粒，其中R是Co，Fe或Ni，M是诸如Si或Al的金属。 NCC厚度保持在最小RM晶粒尺寸周围，以避免RM颗粒不具有足够的直径以桥接上部和下部CoFeB层之间的距离。可以在自由层中包括第二NCC层和第三CoFeB层，或者可以将第二NCC层插入Ru覆盖层的下方。

6. 发明授权

US08498079B1 Superior performance head design with minimized ATE and WATE 有权
标题翻译：卓越的性能头设计，最小化ATE和WATE
公开(公告)号：US08498079B1
公开(公告)日：2013-07-30
申请号：US13620760
申请日：2012-09-15
申请人： Suping Song , Yuhui Tang , Tai Min , Lijie Guan
发明人： Suping Song , Yuhui Tang , Tai Min , Lijie Guan
IPC分类号： G11B5/127
CPC分类号： G11B5/1278 , G11B5/3116 , G11B5/3146 , G11B5/315 , G11B5/3163
摘要： A PMR writer is disclosed with an all wrap around design wherein the leading shield, side shields, and composite trailing shield are comprised of an anisotropic (−Ku) magnetic layer, and where the leading shield and side shields adjoin a gap layer. The composite shield has a first layer made of an isotropic magnetic material adjoining the write gap, and the anisotropic (−Ku) layer adjoins the first trailing shield layer on a side opposite the write gap. The main pole may have a tapered leading side and a tapered trailing side with the anisotropic (−Ku) leading shield and trailing shield layers extending a greater distance from the ABS than the ends of the tapered main pole sides. Adjacent track erasure is minimized while on-track write field and field gradient are improved.
摘要翻译：公开了一种全息环绕设计的PMR写入器，其中前屏蔽，侧屏蔽和复合拖尾屏蔽由各向异性（-Ku）磁性层组成，并且其中前屏蔽和侧屏蔽邻接间隙层。复合屏蔽具有由与写入间隙相邻的各向同性磁性材料制成的第一层，各向异性（-Ku）层与写入间隙相对的一侧与第一后屏蔽层相邻。主极可以具有锥形前缘和锥形后缘，各向异性（-Ku）前屏蔽和后屏蔽层比锥形主极侧的端部从ABS延伸更大的距离。相邻的磁道擦除最小化，同时提高了磁道写入场和磁场梯度。

7. 发明授权

US08422287B2 Pulse field assisted spin momentum transfer MRAM design 有权
标题翻译：脉冲场辅助自旋动量转移MRAM设计
公开(公告)号：US08422287B2
公开(公告)日：2013-04-16
申请号：US12807611
申请日：2010-09-09
申请人： Tai Min , Qiang Chen , Po Kang Wang
发明人： Tai Min , Qiang Chen , Po Kang Wang
IPC分类号： G11C11/14
CPC分类号： G11C11/161 , G11C11/1659 , G11C11/1675
摘要： An MRAM array structure and a method of its operation that is not subject to accidental writing on half-selected elements. Each element of the MRAM is an MTJ (magnetic tunneling junction) cell operating in accord with an STT (spin torque transfer) scheme for changing its free layer magnetization state and each cell is patterned to have a C-shape in the horizontal plane. The cell thereby operates by C-mode switching to provide stability against accidental writing by half-selection. During operation, switching of a cell's magnetization is accomplished with the assist of the pulsed magnetic fields of additional word lines that are formed either orthogonal to or parallel to the existing bit lines and that can carry currents in either direction as required to provide the assist.
摘要翻译： MRAM阵列结构及其操作方法，不会在半选择元素上偶然写入。 MRAM的每个元件是根据用于改变其自由层磁化状态的STT（自旋转矩传递）方案操作的MTJ（磁性隧道结）单元，并且每个单元被图案化以在水平面中具有C形。因此，电池通过C模式切换来操作，以通过半选择提供对意外写入的稳定性。在操作期间，通过与现有位线正交或平行的附加字线的脉冲磁场的帮助来实现电池的磁化的切换，并且可以根据需要在任一方向上承载电流以提供辅助。

8. 发明授权

US07994596B2 Magnetic tunneling junction film structure with process determined in-plane magnetic anisotropy 有权
标题翻译：磁隧道结膜结构与工艺确定面内磁各向异性
公开(公告)号：US07994596B2
公开(公告)日：2011-08-09
申请号：US11515533
申请日：2006-09-05
申请人： Tai Min , Cheng Horng , Po Kang Wang
发明人： Tai Min , Cheng Horng , Po Kang Wang
IPC分类号： H01L29/82 , G11C11/15
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3218 , H01F10/3272 , H01F41/307 , H01L43/12
摘要： An MTJ memory cell and/or an array of such cells is provided wherein each such cell has a small circular horizontal cross-section of 1.0 microns or less in diameter and wherein the ferromagnetic free layer of each such cell has a magnetic anisotropy produced by a magnetic coupling with a thin antiferromagnetic layer that is formed on the free layer. The MTJ memory cell so provided is far less sensitive to shape irregularities and edge defects than cells of the prior art.
摘要翻译：提供MTJ存储器单元和/或这种单元的阵列，其中每个这样的单元具有直径为1.0微米或更小的小的圆形水平横截面，并且其中每个这样的单元的铁磁性自由层具有由与在自由层上形成的薄的反铁磁层的磁耦合。如此提供的MTJ存储单元对于形状不规则和边缘缺陷的敏感性远低于现有技术的单元。

9. 发明申请

US20080253178A1 MRAM with enhanced programming margin 有权
标题翻译： MRAM具有增强的编程余量
公开(公告)号：US20080253178A1
公开(公告)日：2008-10-16
申请号：US11787330
申请日：2007-04-16
申请人： Tai Min , Po Kang Wang
发明人： Tai Min , Po Kang Wang
IPC分类号： G11C11/02 , H01L21/00
CPC分类号： G11C11/16
摘要： An MRAM that is not subject to accidental writing of half-selected memory elements is described, together with a method for its manufacture. The key features of this MRAM are a C-shaped memory element used in conjunction with a segmented bit line architecture.
摘要翻译：描述了不会偶然写入半选择的存储元件的MRAM及其制造方法。该MRAM的主要特征是与分段位线结构一起使用的C形存储元件。

10. 发明申请

US20080180865A1 CPP magnetic recording head with self-stabilizing vortex configuration 有权
标题翻译： CPP磁记录头具有自稳定涡流配置
公开(公告)号：US20080180865A1
公开(公告)日：2008-07-31
申请号：US12079470
申请日：2008-03-27
申请人： Tai Min , Pokang Wang , Min Li , Otto Vogeli
发明人： Tai Min , Pokang Wang , Min Li , Otto Vogeli
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3912 , G11B2005/3996 , G11C11/16 , Y10T29/49043 , Y10T29/49048 , Y10T29/49053
摘要： A CPP MTJ or GMR read sensor is provided in which the free layer is self-stabilized by a magnetization in a circumferential vortex configuration. This magnetization permits the pinned layer to be magnetized in a direction parallel to the ABS plane, which thereby makes the pinned layer directionally more stable as well. The lack of lateral horizontal bias layers or in-stack biasing allows the formation of closely configured shields, thereby providing protection against side-reading. The vortex magnetization is accomplished by first magnetizing the free layer in a uniform vertical field, then applying a vertical current while the field is still present.
摘要翻译：提供了CPP MTJ或GMR读取传感器，其中自由层通过周向涡流构型中的磁化而自稳定。这种磁化允许钉扎层在平行于ABS平面的方向上被磁化，从而使钉扎层也更方向地更稳定。缺少横向水平偏置层或叠层偏压允许形成紧密配置的屏蔽，从而提供防止侧读的保护。涡流磁化是通过在均匀的垂直场中首先磁化自由层，然后在场仍然存在时施加垂直电流来实现的。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式