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1. 发明申请

US20050029625A1 Method and apparatus for allowing formation of self-aligned base contacts 失效
标题翻译：允许形成自对准基底触点的方法和装置
公开(公告)号：US20050029625A1
公开(公告)日：2005-02-10
申请号：US10778525
申请日：2004-02-12
申请人： Tahir Hussain , Rajesh Rajavel , Mary Montes
发明人： Tahir Hussain , Rajesh Rajavel , Mary Montes
IPC分类号： H01L21/331 , H01L29/417 , H01L29/737 , H01L27/082
CPC分类号： H01L29/66318 , H01L29/41708 , H01L29/7371
摘要： A method and apparatus for depositing self-aligned base contacts where over-etching the emitter sidewall to undercut the emitter contact is not needed. A semiconductor structure has a T-shaped emitter contact that comprises a T-top and T-foot. The T-top acts as a mask for depositing the base contacts. In forming the T-top, its dimensions may be varied, thereby allowing the spacing between the base contacts and emitter to be adjusted.
摘要翻译：不需要用于沉积自对准基极触点的方法和装置，其中过蚀刻发射极侧壁以切割发射极接触。半导体结构具有包括T形顶部和T形脚的T形发射体接触。 T形顶部用作沉积基部触点的掩模。在形成T形顶部时，其尺寸可以变化，从而允许调节基座触头和发射器之间的间隔。

2. 发明授权

US08178946B1 Modulation doped super-lattice base for heterojunction bipolar transistors 有权
标题翻译：用于异质结双极晶体管的调制掺杂超晶格基极
公开(公告)号：US08178946B1
公开(公告)日：2012-05-15
申请号：US12623325
申请日：2009-11-20
申请人： James Chingwei Li , Marko Sokolich , Tahir Hussain , David H. Chow
发明人： James Chingwei Li , Marko Sokolich , Tahir Hussain , David H. Chow
IPC分类号： H01L29/00
CPC分类号： H01L29/155 , H01L29/201 , H01L29/7373
摘要： A heterojunction bipolar transistor (HBT) having an emitter, a base, and a collector, the base including a first semiconductor layer coupled to the collector, the first semiconductor layer having a first bandgap between a first conduction band and a first valence band and a second semiconductor layer coupled to the first semiconductor layer and having a second bandgap between a second conduction band and a second valence band, wherein the second valence band is higher than the first valence band and wherein the second semiconductor layer comprises a two dimensional hole gas and a third semiconductor layer coupled to the second semiconductor layer and having a third bandgap between a third conduction band and a third valence band, wherein the third valence band is lower than the second valence band and wherein the third semiconductor layer is coupled to the emitter.
摘要翻译：具有发射极，基极和集电极的异质结双极晶体管（HBT），所述基极包括耦合到集电极的第一半导体层，所述第一半导体层在第一导带和第一价带之间具有第一带隙，第二半导体层，其耦合到所述第一半导体层，并且在第二导带和第二价带之间具有第二带隙，其中所述第二价带高于所述第一价带，并且其中所述第二半导体层包括二维空穴气体，耦合到所述第二半导体层并且在第三导带和第三价带之间具有第三带隙的第三半导体层，其中所述第三价带低于所述第二价带，并且其中所述第三半导体层耦合到所述发射极。

3. 发明授权

US07368765B1 Bipolar transistors with low parasitic losses 失效
标题翻译：具有低寄生损耗的双极晶体管
公开(公告)号：US07368765B1
公开(公告)日：2008-05-06
申请号：US11313862
申请日：2005-12-20
申请人： Rajesh D. Rajavel , David H. Chow , Tahir Hussain , Yakov Royter
发明人： Rajesh D. Rajavel , David H. Chow , Tahir Hussain , Yakov Royter
IPC分类号： H01L29/739 , H01L31/00
CPC分类号： H01L29/732 , H01L29/0821 , H01L29/66242 , H01L29/66272 , H01L29/7371
摘要： Bipolar junction transistors (BJTs) and single or double heterojunction bipolar transistors with low parasitics, and methods for making the same is presented. A transistor is fabricated such that the collector region underneath a base contact area is deactivated. This results in a drastic reduction of the base-collector parasitic capacitance, Cbc. An embodiment of the present invention provides a transistor architecture for which the base contact area can be decoupled from the collector and hence allows for dramatic reduction in the parasitics of transistors.
摘要翻译：提出了双极结晶体管（BJT）和具有低寄生效应的单或双异质结双极晶体管及其制造方法。制造晶体管使得基极接触区域下面的集电极区域被去激活。这导致基极 - 集电极寄生电容C bc 的急剧减小。本发明的一个实施例提供一种晶体管架构，其基极接触区域可以与集电极分离，因此允许显着降低晶体管的寄生效应。

4. 发明授权

US06591105B1 System and method for managing access in cellular network with multiple profiles 有权
标题翻译：用于管理具有多个配置文件的蜂窝网络中的接入的系统和方法
公开(公告)号：US06591105B1
公开(公告)日：2003-07-08
申请号：US09475099
申请日：1999-12-30
申请人： Tahir Hussain , Ranjit Bhatia
发明人： Tahir Hussain , Ranjit Bhatia
IPC分类号： H04Q720
CPC分类号： H04W8/18
摘要： A telecommunications system and method is disclosed for allowing business indoor mobile subscribers having multiple profiles to access both the business indoor network and the Public Land Mobile Network (PLMN) using one mobile terminal. To implement this dual-network service, a toggle feature can be provided to allow a business indoor mobile subscriber to choose between different subscriber profiles. Thus, if a mobile subscriber currently has the business indoor profile active and wishes to access the PLMN while roaming outside the business indoor cell(s), the mobile subscriber can initiate this toggle feature, and upon acknowledgment and authentication by the PLMN, the mobile subscriber can have access to the PLMN.
摘要翻译：公开了一种电信系统和方法，用于允许具有多个简档的商业室内移动用户使用一个移动终端访问商业室内网络和公共陆地移动网络（PLMN）。为了实现这种双网络服务，可以提供切换功能，以允许商业室内移动用户在不同的用户简档之间进行选择。因此，如果移动用户当前具有活动的商业室内简档并且希望在商业室内小区外部漫游时访问PLMN，则移动订户可以发起该切换特征，并且在PLMN确认和认证之后，移动台用户可以访问PLMN。

5. 发明授权

US06366781B1 System and method for time of arrival based positioning during handover 有权
标题翻译：移交期间到达时间定位的系统和方法
公开(公告)号：US06366781B1
公开(公告)日：2002-04-02
申请号：US09350042
申请日：1999-07-08
申请人： Tahir Hussain , Bagher Zadeh
发明人： Tahir Hussain , Bagher Zadeh
IPC分类号： H04Q720
CPC分类号： H04W36/32 , H04W36/38
摘要： A telecommunications system and method is disclosed for allowing an ongoing Time of Arrival (TOA) based positioning of a mobile station to proceed if a radio related handover has occurred before the expiration of a delta timer in a Base Station Controller (BSC). The BSC stores an HOTIMER value therein, which corresponds to the amount of time involved in a normal radio-related handover procedure from the sending of a Handover Command to the reception of a Handover Complete message. If the BSC delta timer is active, e.g., positioning is ongoing, and the BSC determines that a radio related handover is needed, the BSC checks the amount of time remaining in the BSC delta timer. If that amount is more than the HOTIMER, then the ongoing positioning is not canceled.
摘要翻译：公开了一种电信系统和方法，用于如果在基站控制器（BSC）中的增量计时器到期之前已经发生无线电相关的切换，则允许正在进行的移动台的定位（TOA）进行。 BSC存储其中的HOTIMER值，其对应于从发送切换命令到接收完成消息的正常无线电相关切换过程中涉及的时间量。如果BSC delta定时器是活动的，例如定位正在进行，并且BSC确定需要无线电相关的切换，则BSC检查BSC delta定时器中剩余的时间量。如果该数量超过HOTIMER，则不会取消正在进行的定位。

6. 发明授权

US07868335B1 Modulation doped super-lattice sub-collector for high-performance HBTs and BJTs 有权
标题翻译：用于高性能HBT和BJT的调制掺杂超晶格子集电极
公开(公告)号：US07868335B1
公开(公告)日：2011-01-11
申请号：US12193436
申请日：2008-08-18
申请人： James Chingwei Li , Marko Sokolich , Tahir Hussain , David H. Chow
发明人： James Chingwei Li , Marko Sokolich , Tahir Hussain , David H. Chow
IPC分类号： H01L21/20
CPC分类号： H01L29/7371 , H01L29/155 , H01L29/365
摘要： A bipolar junction transistor having an emitter, a base, and a collector includes a stack of one or more layer sets adjacent the collector. Each layer set includes a first material having a first band gap, wherein the first material is highly doped, and a second material having a second band gap narrower than the first band gap, wherein the second material is at most lightly doped.
摘要翻译：具有发射极，基极和集电极的双极结型晶体管包括与集电极相邻的一个或多个层组的叠层。每个层组包括具有第一带隙的第一材料，其中所述第一材料是高度掺杂的，以及具有比所述第一带隙窄的第二带隙的第二材料，其中所述第二材料最多是轻掺杂的。

7. 发明授权

US06852615B2 Ohmic contacts for high electron mobility transistors and a method of making the same 有权
标题翻译：用于高电子迁移率晶体管的欧姆接触及其制造方法
公开(公告)号：US06852615B2
公开(公告)日：2005-02-08
申请号：US10457506
申请日：2003-06-09
申请人： Miroslav Micovic , Tahir Hussain , Paul Hashimoto , Janna Ruth Duvall
发明人： Miroslav Micovic , Tahir Hussain , Paul Hashimoto , Janna Ruth Duvall
IPC分类号： H01L21/285 , H01L29/20 , H01L29/417 , H01L29/45 , H10L21/338
CPC分类号： H01L29/452 , H01L21/28575 , H01L29/2003 , H01L29/41725 , Y10S438/975 , Y10S438/978
摘要： A process and related product in which ohmic contacts are formed in High Electron Mobility Transistors (HEMTs) employing compound substrates such as gallium nitride. An improved device and an improvement to a process for fabrication of ohmic contacts to GaN/AlGaN HEMTs using a novel two step resist process to fabricate the ohmic contacts are described. This novel two-step process consists of depositing a plurality of layers having compounds of Group III V elements on a substrate; patterning and depositing a first photoresist on one of the layers; etching recessed areas into this layer; depositing ohmic metals on the recessed areas; removing the first photoresist; patterning and depositing a second photoresist, smaller in profile than the first photoresist, on the layer; depositing more ohmic metal on the layer allowing for complete coverage of the recessed areas; removing the second photoresist, and annealing the semiconductor structure.
摘要翻译：在使用诸如氮化镓的复合衬底的高电子迁移率晶体管（HEMT）中形成欧姆接触的工艺及相关产品。描述了使用新颖的两步抗蚀剂工艺制造欧姆接触的改进的器件和用于制造对GaN / AlGaN HEMT的欧姆接触的工艺的改进。这种新型的两步法包括在基片上沉积多层具有IIIV族元素化合物的层; 在其中一层上图案化和沉积第一光致抗蚀剂; 将凹陷区域蚀刻到该层中; 在凹陷区域沉积欧姆金属; 去除第一光致抗蚀剂; 在该层上图案化和沉积比第一光致抗蚀剂更小的第二光致抗蚀剂; 在该层上沉积更多的欧姆金属，允许完全覆盖凹陷区域; 去除第二光致抗蚀剂，并退火半导体结构。

8. 发明授权

US06725048B2 Traffic congestion management when providing realtime information to service providers 有权
标题翻译：向服务提供商提供实时信息时的流量拥塞管理
公开(公告)号：US06725048B2
公开(公告)日：2004-04-20
申请号：US09862217
申请日：2001-05-21
申请人： Xiaohong Mao , Hans Erik van Elburg , Kiran Harpanhalli , Tahir Hussain
发明人： Xiaohong Mao , Hans Erik van Elburg , Kiran Harpanhalli , Tahir Hussain
IPC分类号： H04Q720
CPC分类号： H04L67/16 , G06F17/3087 , G06Q10/02 , H04L29/06 , H04L43/028 , H04L43/16 , H04L67/04 , H04L67/12 , H04L67/18 , H04L67/20 , H04L67/22 , H04L67/26 , H04L67/2819 , H04L67/2828 , H04L67/306 , H04L67/325 , H04L69/329 , H04W4/02 , H04W8/20
摘要： Methods, systems, and arrangements facilitate information interexchange between a telecommunications network and an information service provider. For example, a business-to-business (B2B) engine includes one or more logic modules for interfacing with the telecommunications network and with the information service provider. The B2B engine facilitates the reporting of, e.g., realtime information from the telecommunications network to the information service provider. This realtime information may include subscriber unit location that is proactively sent by the subscriber unit to the B2B engine for forwarding to the information service provider. To avoid possibly congesting the telecommunications network, the B2B engine is empowered to monitor the number of proactively-transmitted location messages and to limit them if they exceed a defined threshold.
摘要翻译：方法，系统和安排促进电信网络和信息服务提供商之间的信息交换。例如，企业对企业（B2B）引擎包括用于与电信网络和信息服务提供商接口的一个或多个逻辑模块。 B2B引擎有助于例如从电信网络到信息服务提供商的实时信息的报告。该实时信息可以包括由用户单元主动发送到B2B引擎以用于转发到信息服务提供商的订户单元位置。为了避免可能使电信网络拥塞，B2B引擎被授权监视主动发送的位置消息的数量，并且如果它们超过定义的阈值则限制它们。

9. 发明授权

US06680236B2 Ion-implantation and shallow etching to produce effective edge termination in high-voltage heterojunction bipolar transistors 有权
标题翻译：离子注入和浅蚀刻在高压异质结双极晶体管中产生有效的边缘终止
公开(公告)号：US06680236B2
公开(公告)日：2004-01-20
申请号：US10044689
申请日：2002-01-11
申请人： Tahir Hussain , Mary C. Montes
发明人： Tahir Hussain , Mary C. Montes
IPC分类号： H01L21331
CPC分类号： H01L29/66318
摘要： A method is provided for improving edge terminations in a semiconductor device while maintaining breakdown voltage of said semiconductor device at or near its theoretical limit. The method comprises: employing ion-implantation to create a compensated region around the semiconductor device, followed by wet chemical etching to form a mesa on the order of 0.2 to 0.3 &mgr;m. The method provides a simple but novel approach to fabricate edge terminations in semiconductor devices in general and in devices employing p-n junctions such as in a GaAs heterojunction bipolar transistor (HBT) to achieve near-ideal electrical characteristics at the device edge. Instead of traditional edge beveling techniques such as those involving grinding, sandblasting, or mesa-etching using masks, the technique disclosed herein utilizes ion-implantation to create a compensated region around the device and wet chemical etching to make a shallow mesa.
摘要翻译：提供一种用于改善半导体器件中的边缘端接的方法，同时将所述半导体器件的击穿电压保持在理论极限处或接近其理论极限。该方法包括：使用离子注入在半导体器件周围产生补偿区域，随后进行湿式化学蚀刻以形成0.2至0.3μm的数量级的台面。该方法提供了一种简单而新颖的方法来制造半导体器件中的边缘终端以及采用p-n结的器件，例如在GaAs异质结双极晶体管（HBT）中，以在器件边缘实现接近理想的电特性。代替传统的边缘倒角技术，例如涉及使用掩模的研磨，喷砂或台面蚀刻的那些技术，本文公开的技术利用离子注入在该装置周围产生补偿区域，并进行湿化学蚀刻以形成浅台面。

10. 发明授权

US06351644B1 System, method and apparatus to prepare base transceiver station for intra-cell asynchronous positioning handover 有权
标题翻译：用于小区内异步定位切换的基站收发台的系统，方法和装置
公开(公告)号：US06351644B1
公开(公告)日：2002-02-26
申请号：US09398666
申请日：1999-09-17
申请人： Tahir Hussain , Bagher Zadeh , Shahrokh Amirijoo
发明人： Tahir Hussain , Bagher Zadeh , Shahrokh Amirijoo
IPC分类号： H04Q720
CPC分类号： H04W64/00 , H04W74/00
摘要： A system, method, and apparatus for determining a position of a mobile station in a mobile telecommunications network is disclosed. Speech interruptions during mobile station positioning are reduced or eliminated by controlling the number of access bursts transmitted by the mobile station. The number of access burst transmitted by the mobile station is controlled to a level commensurate with the degree of positioning accuracy required by the requesting application. The number of access bursts is calculated by the Mobile Location Center (MLC) and communicated to the Base Transceiver Station (BTS) via the Base Station Controller (BSC). After the requisite number of access bursts are received, the BTS transmits a signal to the mobile station, causing the mobile station to cease transmitting access bursts.
摘要翻译：公开了一种用于确定移动电话在移动电信网络中的位置的系统，方法和装置。通过控制由移动台发送的接入脉冲串的数量来减少或消除移动台定位期间的语音中断。由移动台发送的接入脉冲串的数量被控制到与请求应用程序所要求的定位精度相当的水平。接入脉冲串的数量由移动定位中心（MLC）计算并通过基站控制器（BSC）传送到基站收发台（BTS）。在接收到所需数量的接入突发之后，BTS向移动台发送信号，导致移动台停止发送接入脉冲串。

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