专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08178946B1 Modulation doped super-lattice base for heterojunction bipolar transistors 有权
标题翻译：用于异质结双极晶体管的调制掺杂超晶格基极
公开(公告)号：US08178946B1
公开(公告)日：2012-05-15
申请号：US12623325
申请日：2009-11-20
申请人： James Chingwei Li , Marko Sokolich , Tahir Hussain , David H. Chow
发明人： James Chingwei Li , Marko Sokolich , Tahir Hussain , David H. Chow
IPC分类号： H01L29/00
CPC分类号： H01L29/155 , H01L29/201 , H01L29/7373
摘要： A heterojunction bipolar transistor (HBT) having an emitter, a base, and a collector, the base including a first semiconductor layer coupled to the collector, the first semiconductor layer having a first bandgap between a first conduction band and a first valence band and a second semiconductor layer coupled to the first semiconductor layer and having a second bandgap between a second conduction band and a second valence band, wherein the second valence band is higher than the first valence band and wherein the second semiconductor layer comprises a two dimensional hole gas and a third semiconductor layer coupled to the second semiconductor layer and having a third bandgap between a third conduction band and a third valence band, wherein the third valence band is lower than the second valence band and wherein the third semiconductor layer is coupled to the emitter.
摘要翻译：具有发射极，基极和集电极的异质结双极晶体管（HBT），所述基极包括耦合到集电极的第一半导体层，所述第一半导体层在第一导带和第一价带之间具有第一带隙，第二半导体层，其耦合到所述第一半导体层，并且在第二导带和第二价带之间具有第二带隙，其中所述第二价带高于所述第一价带，并且其中所述第二半导体层包括二维空穴气体，耦合到所述第二半导体层并且在第三导带和第三价带之间具有第三带隙的第三半导体层，其中所述第三价带低于所述第二价带，并且其中所述第三半导体层耦合到所述发射极。

2. 发明授权

US07531851B1 Electronic device with reduced interface charge between epitaxially grown layers and a method for making the same 有权
标题翻译：在外延生长层之间具有降低的界面电荷的电子器件及其制造方法
公开(公告)号：US07531851B1
公开(公告)日：2009-05-12
申请号：US11713070
申请日：2007-02-28
申请人： Rajesh D. Rajavel , Mary Y. Chen , Steven S. Bui , David H. Chow , James Chingwei Li , Mehran Mokhtari , Marko Sokolich
发明人： Rajesh D. Rajavel , Mary Y. Chen , Steven S. Bui , David H. Chow , James Chingwei Li , Mehran Mokhtari , Marko Sokolich
IPC分类号： H01L31/0328
CPC分类号： H01L29/7371 , H01L27/0605 , H01L29/0821 , H01L29/66318 , Y10S438/906
摘要： An electronic device contains a substrate, a sub-collector supported by the substrate, an un-doped layer having a selectively implanted buried sub-collector and supported by the sub-collector, an As-based nucleation layer partially supported by the un-doped layer, a collector layer supported by the As-based nucleation layer, a base layer supported by the collector layer, an emitter layer and a base contact supported by the base layer, an emitter cap layer supported by the emitter layer, an emitter contact supported by the emitter cap layer, and a collector contact supported by the sub-collector. A method provides for selecting a first InP layer, forming an As-based nucleation layer on the first InP layer, and epitaxially growing a second InP layer on the As-based nucleation layer.
摘要翻译：电子器件包含衬底，由衬底支撑的子集电极，具有选择性注入的掩埋子集电极并由子集电极支撑的未掺杂层，由未掺杂的部分支撑的基于As的成核层由As基成核层支撑的集电体层，由集电极层支撑的基极层，由基极层支撑的发射极层和基极接触，由发射极层支撑的发射极盖层，负极由发射极盖层和由集电极支撑的集电极触点。一种方法提供选择第一InP层，在第一InP层上形成基于As的成核层，以及在As基成核层上外延生长第二InP层。

3. 发明授权

US06949776B2 Heterojunction bipolar transistor with dielectric assisted planarized contacts and method for fabricating 有权
标题翻译：具有介质辅助平面化触点的异质结双极晶体管及其制造方法
公开(公告)号：US06949776B2
公开(公告)日：2005-09-27
申请号：US10256042
申请日：2002-09-26
申请人： Richard L. Pierson, Jr. , James Chingwei Li , Berinder P. S. Brar , John A. Higgins
发明人： Richard L. Pierson, Jr. , James Chingwei Li , Berinder P. S. Brar , John A. Higgins
IPC分类号： H01L21/331 , H01L29/737 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L29/66318 , H01L29/7371 , Y10S438/978
摘要： A heterojunction bipolar transistor (HBT) is disclosed that includes successive emitter, base and collector and sub-collector epitaxial layers and emitter, base and collector contact metals contacting the emitter, base and sub-collector layers respectively. A passivation material is included that covers the uncovered portions of the layers and covers substantially all of the contact metals. The passivation material has a planar surface and a portion of each of the contact metals protrudes from the surface. Planar metals are included on the planar surface, each being isolated from the others and in electrical contact with a respective contact metal. A method for fabricating an HBT is also disclosed, wherein successive emitter, base, collector and sub-collector epitaxial layers are deposited on a substrate, with the substrate being adjacent to the sub-collector layer. The epitaxial layers are etched to provide locations for contact metals and emitter, base and contact metals are deposited on the emitter, base and sub-collector epitaxial layers, respectively. A self-alignment material is deposited on the surface of the substrate around the epitaxial layers and a planarization material is deposited on and covers the top surface of the HBT. The planarization material is then etched so it has a planar surface about the same level as the surface of the self-alignment material and the contact metals protrude from the planar surface. The planar metals are then deposited over the protruding portions of the contact metals.
摘要翻译：公开了一种异质结双极晶体管（HBT），其包括连续的发射极，基极和集电极和子集电极外延层以及分别与发射极，基极和子集电极层接触的发射极，基极和集电极接触金属。包括钝化材料，其覆盖层的未覆盖部分并覆盖基本上所有的接触金属。钝化材料具有平坦表面，并且每个接触金属的一部分从表面突出。平面金属包括在平面表面上，每个与其它表面分离，并与相应的接触金属电接触。还公开了制造HBT的方法，其中连续的发射极，基极，集电极和亚集电极外延层沉积在衬底上，衬底与子集电极层相邻。外延层被蚀刻以提供用于接触金属和发射极的位置，基极和接触金属分别沉积在发射极，基极和次集电极外延层上。自对准材料沉积在外延层周围的衬底表面上，平坦化材料沉积在HBT的顶表面上并覆盖其上表面。然后对平坦化材料进行蚀刻，使其具有与自对准材料的表面大致相同的平面，并且接触金属从平坦表面突出。然后将平面金属沉积在接触金属的突出部分上。

4. 发明授权

US07868335B1 Modulation doped super-lattice sub-collector for high-performance HBTs and BJTs 有权
标题翻译：用于高性能HBT和BJT的调制掺杂超晶格子集电极
公开(公告)号：US07868335B1
公开(公告)日：2011-01-11
申请号：US12193436
申请日：2008-08-18
申请人： James Chingwei Li , Marko Sokolich , Tahir Hussain , David H. Chow
发明人： James Chingwei Li , Marko Sokolich , Tahir Hussain , David H. Chow
IPC分类号： H01L21/20
CPC分类号： H01L29/7371 , H01L29/155 , H01L29/365
摘要： A bipolar junction transistor having an emitter, a base, and a collector includes a stack of one or more layer sets adjacent the collector. Each layer set includes a first material having a first band gap, wherein the first material is highly doped, and a second material having a second band gap narrower than the first band gap, wherein the second material is at most lightly doped.
摘要翻译：具有发射极，基极和集电极的双极结型晶体管包括与集电极相邻的一个或多个层组的叠层。每个层组包括具有第一带隙的第一材料，其中所述第一材料是高度掺杂的，以及具有比所述第一带隙窄的第二带隙的第二材料，其中所述第二材料最多是轻掺杂的。

5. 发明授权

US06797995B2 Heterojunction bipolar transistor with InGaAs contact and etch stop layer for InP sub-collector 有权
标题翻译：具有InGaAs接触的异质结双极晶体管和InP子集电极的蚀刻停止层
公开(公告)号：US06797995B2
公开(公告)日：2004-09-28
申请号：US10075428
申请日：2002-02-14
申请人： Richard L. Pierson, Jr. , James Chingwei Li , Berinder P. S. Brar , John A. Higgins
发明人： Richard L. Pierson, Jr. , James Chingwei Li , Berinder P. S. Brar , John A. Higgins
IPC分类号： H01L310328
CPC分类号： H01L29/66318 , H01L29/0821 , H01L29/7371
摘要： A thin InGaAs contact layer is provided for the collector of a heterojunction bipolar transistor (HBT) above an InP sub-collector. The contact layer provides a low resistance contact mechanism and a high thermal conductivity path for removing device heat though the sub-collector, and also serves as an etch stop to protect the sub-collector during device fabrication. A portion of the sub-collector lateral to the remainder of the HBT is rendered electrically insulative, preferably by an ion implant, to provide electrical isolation for the device and improve its planarity by avoiding etching through the sub-collector.
摘要翻译：为InP子集电极之上的异质结双极晶体管（HBT）的集电极提供了一个薄的InGaAs接触层。接触层提供低电阻接触机构和高导热性路径，用于通过子集电器去除器件热，并且还用作在器件制造期间保护子集电极的蚀刻停止。在HBT的其余部分横向的子集电极的一部分被优选地通过离子注入电绝缘，以提供器件的电隔离，并通过避免通过子集电极的蚀刻来改善其平面度。

6. 发明授权

US06605825B1 Bipolar transistor characterization apparatus with lateral test probe pads 失效
标题翻译：具有侧向测试探针焊盘的双极晶体管表征装置
公开(公告)号：US06605825B1
公开(公告)日：2003-08-12
申请号：US10075758
申请日：2002-02-14
申请人： Berinder P. S. Brar , James Chingwei Li , John A. Higgins
发明人： Berinder P. S. Brar , James Chingwei Li , John A. Higgins
IPC分类号： H01L2358
CPC分类号： H01L22/34 , H01L2924/0002 , H01L2924/00
摘要： Test probe pads are located lateral to, and spaced from, the emitter, base or collector region of a bipolar transistor, preferably on separate pedestals, and connected to their respective transistor regions by air bridges. The probe pads, transistor contacts and air bridges are preferably formed as common metallizations. In the case of an HBT, a gap in the subcollector below the air bridges insulates the test transistor from capacitor loading by the probe pads. The test transistors can be used to characterize both themselves and functional circuit transistors fabricated with the same process on the same wafer by testing at an intermediate stage of manufacture, thus allowing wafers to be discarded without completing the manufacture if their transistors do not meet specifications.
摘要翻译：测试探针焊盘位于双极晶体管的发射极，基极或集电极区域的两侧并且与之隔开，优选地在独立的基座上，并通过气桥连接到它们各自的晶体管区域。探针焊盘，晶体管触点和气桥优选地形成为公共金属化。在HBT的情况下，空气桥下的子集电极的间隙使测试晶体管与探针焊盘的电容负载绝缘。测试晶体管可用于通过在制造的中间阶段进行测试，在同一晶片上以相同工艺制造的本身和功能电路晶体管进行表征，因此如果晶体管不符合规格，就可以丢弃晶片而不完成制造。

7. 发明授权

US08957455B1 Modulation doped super-lattice base for heterojunction bipolar transistors 有权
标题翻译：用于异质结双极晶体管的调制掺杂超晶格基极
公开(公告)号：US08957455B1
公开(公告)日：2015-02-17
申请号：US13438810
申请日：2012-04-03
申请人： James Chingwei Li , Marko Sokolich , Tahir Hussain , David H. Chow
发明人： James Chingwei Li , Marko Sokolich , Tahir Hussain , David H. Chow
IPC分类号： H01L29/737
CPC分类号： H01L29/155 , H01L29/201 , H01L29/7373
摘要： A heterojunction bipolar transistor (HBT) having an emitter, a base, and a collector, the base including a first semiconductor layer coupled to the collector, the first semiconductor layer having a first bandgap between a first conduction band and a first valence band and a second semiconductor layer coupled to the first semiconductor layer and having a second bandgap between a second conduction band and a second valence band, wherein the second valence band is higher than the first valence band and wherein the second semiconductor layer comprises a two dimensional hole gas and a third semiconductor layer coupled to the second semiconductor layer and having a third bandgap between a third conduction band and a third valence band, wherein the third valence band is lower than the second valence band and wherein the third semiconductor layer is coupled to the emitter.
摘要翻译：具有发射极，基极和集电极的异质结双极晶体管（HBT），所述基极包括耦合到集电极的第一半导体层，所述第一半导体层在第一导带和第一价带之间具有第一带隙，第二半导体层，其耦合到所述第一半导体层，并且在第二导带和第二价带之间具有第二带隙，其中所述第二价带高于所述第一价带，并且其中所述第二半导体层包括二维空穴气体，耦合到所述第二半导体层并且在第三导带和第三价带之间具有第三带隙的第三半导体层，其中所述第三价带低于所述第二价带，并且其中所述第三半导体层耦合到所述发射极。

8. 发明授权

US07354820B2 Heterojunction bipolar transistor with dielectric assisted planarized contacts and method for fabricating 有权
标题翻译：具有介质辅助平面化触点的异质结双极晶体管及其制造方法
公开(公告)号：US07354820B2
公开(公告)日：2008-04-08
申请号：US11227858
申请日：2005-09-14
申请人： Richard L. Pierson, Jr. , James Chingwei Li , Berinder P. S. Brar , John A. Higgins
发明人： Richard L. Pierson, Jr. , James Chingwei Li , Berinder P. S. Brar , John A. Higgins
IPC分类号： H01L21/8249
CPC分类号： H01L29/66318 , H01L29/7371 , Y10S438/978
摘要： A method for fabricating an HBT is disclosed, wherein successive emitter, base, collector and sub-collector epitaxial layers are deposited on a substrate, with the substrate being adjacent to the sub-collector layer. The epitaxial layers are etched to provide locations for contact metals and emitter, base and contact metals are deposited on the emitter, base and sub-collector epitaxial layers, respectively. A self-alignment material is deposited on the surface of the substrate around the epitaxial layers and a planarization material is deposited on and covers the top surface of the HBT. The planarization material is then etched so it has a planar surface about the same level as the surface of the self-alignment material and the contact metals protrude from the planar surface. The planar metals are then deposited over the protruding portions of the contact metals.
摘要翻译：公开了一种用于制造HBT的方法，其中连续的发射极，基极，集电极和次集电极外延层沉积在衬底上，衬底与子集电极层相邻。外延层被蚀刻以提供用于接触金属和发射极的位置，基极和接触金属分别沉积在发射极，基极和次集电极外延层上。自对准材料沉积在外延层周围的衬底表面上，平坦化材料沉积在HBT的顶表面上并覆盖其上表面。然后对平坦化材料进行蚀刻，使其具有与自对准材料的表面大致相同的平面，并且接触金属从平坦表面突出。然后将平面金属沉积在接触金属的突出部分上。

9. 发明授权

US09508552B1 Method for forming metallic sub-collector for HBT and BJT transistors 有权
标题翻译： HBT和BJT晶体管金属子集电极形成方法
公开(公告)号：US09508552B1
公开(公告)日：2016-11-29
申请号：US14481676
申请日：2014-09-09
申请人： James Chingwei Li , Donald A. Hitko , Yakov Royter , Pamela R. Patterson
发明人： James Chingwei Li , Donald A. Hitko , Yakov Royter , Pamela R. Patterson
IPC分类号： H01L21/44 , H01L21/48 , H01L21/331 , H01L21/20 , H01L29/66 , H01L23/373 , H01L23/535 , H01L29/40 , H01L29/49 , H01L21/74 , H01L21/304
CPC分类号： H01L21/2007 , H01L21/304 , H01L21/6835 , H01L21/74 , H01L21/743 , H01L23/3732 , H01L23/3738 , H01L23/535 , H01L29/401 , H01L29/41708 , H01L29/452 , H01L29/495 , H01L29/66242 , H01L29/66265 , H01L29/66318 , H01L29/7371 , H01L2221/6835 , H01L2221/68368
摘要： A heterojunction bipolar transistor having an emitter, a base, and a collector, the heterojunction bipolar transistor including a metallic sub-collector electrically and thermally coupled to the collector wherein the metallic sub-collector comprises a metallic thin film, and a collector contact electrically connected to the metallic sub-collector.
摘要翻译：一种具有发射极，基极和集电极的异质结双极晶体管，所述异质结双极晶体管包括电和热耦合到集电极的金属副集电极，其中所述金属副集电极包括金属薄膜，并且集电极触点电连接到金属副收集器。

10. 发明授权

US09099397B1 Fabrication of self aligned base contacts for bipolar transistors 有权
标题翻译：双极晶体管自对准基极接触的制作
公开(公告)号：US09099397B1
公开(公告)日：2015-08-04
申请号：US13427097
申请日：2012-03-22
申请人： James Chingwei Li
发明人： James Chingwei Li
IPC分类号： H01L21/306 , H01L21/265 , H01L21/285 , H01L29/70 , H01L27/102 , H01L31/11
CPC分类号： H01L21/306 , H01L21/265 , H01L21/285 , H01L27/102 , H01L29/401 , H01L29/42304 , H01L29/6625 , H01L29/70 , H01L29/732 , H01L29/7371 , H01L31/11
摘要： A transistor includes a first emitter layer area, a second emitter layer area, wherein the second emitter layer area is separate from the first emitter layer area, a first metal formed on the first emitter layer area, a second metal formed on the second emitter layer area, a base, and a base metal formed on the base and on the second metal. The first emitter layer area is an emitter of the transistor and the first metal provides an emitter contact. The base metal on the base and on the second metal provides a base contact.
摘要翻译：晶体管包括第一发射极层区域，第二发射极层区域，其中第二发射极层区域与第一发射极层区域分离，形成在第一发射极层区域上的第一金属，形成在第二发射极层上的第二金属区域，基部和形成在基部和第二金属上的基底金属。第一发射极层区域是晶体管的发射极，第一金属提供发射极接触。底座上的第二金属和第二金属上的母材提供了底座接触。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式