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1. 发明授权

US07368765B1 Bipolar transistors with low parasitic losses 失效
标题翻译：具有低寄生损耗的双极晶体管
公开(公告)号：US07368765B1
公开(公告)日：2008-05-06
申请号：US11313862
申请日：2005-12-20
申请人： Rajesh D. Rajavel , David H. Chow , Tahir Hussain , Yakov Royter
发明人： Rajesh D. Rajavel , David H. Chow , Tahir Hussain , Yakov Royter
IPC分类号： H01L29/739 , H01L31/00
CPC分类号： H01L29/732 , H01L29/0821 , H01L29/66242 , H01L29/66272 , H01L29/7371
摘要： Bipolar junction transistors (BJTs) and single or double heterojunction bipolar transistors with low parasitics, and methods for making the same is presented. A transistor is fabricated such that the collector region underneath a base contact area is deactivated. This results in a drastic reduction of the base-collector parasitic capacitance, Cbc. An embodiment of the present invention provides a transistor architecture for which the base contact area can be decoupled from the collector and hence allows for dramatic reduction in the parasitics of transistors.
摘要翻译：提出了双极结晶体管（BJT）和具有低寄生效应的单或双异质结双极晶体管及其制造方法。制造晶体管使得基极接触区域下面的集电极区域被去激活。这导致基极 - 集电极寄生电容C bc 的急剧减小。本发明的一个实施例提供一种晶体管架构，其基极接触区域可以与集电极分离，因此允许显着降低晶体管的寄生效应。

2. 发明授权

US07569872B1 Bipolar transistors with low parasitic losses 失效
标题翻译：具有低寄生损耗的双极晶体管
公开(公告)号：US07569872B1
公开(公告)日：2009-08-04
申请号：US11313865
申请日：2005-12-20
申请人： Rajesh D. Rajavel , David H. Chow , Tahir Hussain , Yakov Royter
发明人： Rajesh D. Rajavel , David H. Chow , Tahir Hussain , Yakov Royter
IPC分类号： H01L29/739 , H01L31/072
CPC分类号： H01L29/7371 , H01L29/0821 , H01L29/1004 , H01L29/66318
摘要： Bipolar junction transistors (BJTs) and single or double heterojunction bipolar transistors with low parasitics, and methods for making the same is presented. A transistor is fabricated such that the collector region underneath a base contact area is deactivated. This results in a drastic reduction of the base-collector parasitic capacitance, Cbc. An embodiment of the present invention provides a transistor architecture for which the base contact area can be decoupled from the collector and hence allows for dramatic reduction in the parasitics of transistors.
摘要翻译：提出了双极结晶体管（BJT）和具有低寄生效应的单或双异质结双极晶体管及其制造方法。制造晶体管使得基极接触区域下面的集电极区域被去激活。这导致基极集电极寄生电容Cbc的急剧减小。本发明的一个实施例提供一种晶体管架构，其基极接触区域可以与集电极分离，因此允许显着降低晶体管的寄生效应。

3. 发明授权

US07229874B2 Method and apparatus for allowing formation of self-aligned base contacts 失效
标题翻译：允许形成自对准基底触点的方法和装置
公开(公告)号：US07229874B2
公开(公告)日：2007-06-12
申请号：US10778525
申请日：2004-02-12
申请人： Tahir Hussain , Rajesh D. Rajavel , Mary C. Montes
发明人： Tahir Hussain , Rajesh D. Rajavel , Mary C. Montes
IPC分类号： H01L21/8249 , H01L21/336 , H01L21/331
CPC分类号： H01L29/66318 , H01L29/41708 , H01L29/7371
摘要： A method and apparatus for depositing self-aligned base contacts where over-etching the emitter sidewall to undercut the emitter contact is not needed. A semiconductor structure has a T-shaped emitter contact that comprises a T-top and T-foot. The T-top acts as a mask for depositing the base contacts. In forming the T-top, its dimensions may be varied, thereby allowing the spacing between the base contacts and emitter to be adjusted.
摘要翻译：不需要用于沉积自对准基极触点的方法和装置，其中过蚀刻发射极侧壁以切割发射极接触。半导体结构具有包括T形顶部和T形脚的T形发射体接触。 T形顶部用作沉积基部触点的掩模。在形成T形顶部时，其尺寸可以变化，从而允许调节基座触头和发射器之间的间隔。

4. 发明授权

US09450022B1 Memristor devices and fabrication 有权
标题翻译：忆阻器的装置和制造
公开(公告)号：US09450022B1
公开(公告)日：2016-09-20
申请号：US13604559
申请日：2012-09-05
申请人： Dana C. Wheeler , Tahir Hussain , Yakov Royter , Eason F. Wang
发明人： Dana C. Wheeler , Tahir Hussain , Yakov Royter , Eason F. Wang
IPC分类号： H01L27/24 , H01L21/00
CPC分类号： H01L27/2418 , H01L27/2463 , H01L45/04 , H01L45/1253 , H01L45/146 , H01L45/16
摘要： A method for fabricating a digital memristor crossbar array includes applying a protective layer on at least a portion of a memristive layer. A method for fabricating an analog memristor crossbar array includes providing a self-aligning first electrode layer. An analog memristor includes a memristive layer bar arranged to self-align said second electrode on said memristive layer along its length.
摘要翻译：数字忆阻器横杆阵列的制造方法包括在至少一部分忆阻层上施加保护层。一种用于制造模拟忆阻器交叉开关阵列的方法包括提供自对准的第一电极层。模拟忆阻器包括设置成沿其长度自对准所述忆阻层上的所述第二电极的忆阻层条。

5. 发明授权

US08178946B1 Modulation doped super-lattice base for heterojunction bipolar transistors 有权
标题翻译：用于异质结双极晶体管的调制掺杂超晶格基极
公开(公告)号：US08178946B1
公开(公告)日：2012-05-15
申请号：US12623325
申请日：2009-11-20
申请人： James Chingwei Li , Marko Sokolich , Tahir Hussain , David H. Chow
发明人： James Chingwei Li , Marko Sokolich , Tahir Hussain , David H. Chow
IPC分类号： H01L29/00
CPC分类号： H01L29/155 , H01L29/201 , H01L29/7373
摘要： A heterojunction bipolar transistor (HBT) having an emitter, a base, and a collector, the base including a first semiconductor layer coupled to the collector, the first semiconductor layer having a first bandgap between a first conduction band and a first valence band and a second semiconductor layer coupled to the first semiconductor layer and having a second bandgap between a second conduction band and a second valence band, wherein the second valence band is higher than the first valence band and wherein the second semiconductor layer comprises a two dimensional hole gas and a third semiconductor layer coupled to the second semiconductor layer and having a third bandgap between a third conduction band and a third valence band, wherein the third valence band is lower than the second valence band and wherein the third semiconductor layer is coupled to the emitter.
摘要翻译：具有发射极，基极和集电极的异质结双极晶体管（HBT），所述基极包括耦合到集电极的第一半导体层，所述第一半导体层在第一导带和第一价带之间具有第一带隙，第二半导体层，其耦合到所述第一半导体层，并且在第二导带和第二价带之间具有第二带隙，其中所述第二价带高于所述第一价带，并且其中所述第二半导体层包括二维空穴气体，耦合到所述第二半导体层并且在第三导带和第三价带之间具有第三带隙的第三半导体层，其中所述第三价带低于所述第二价带，并且其中所述第三半导体层耦合到所述发射极。

6. 发明授权

US07868335B1 Modulation doped super-lattice sub-collector for high-performance HBTs and BJTs 有权
标题翻译：用于高性能HBT和BJT的调制掺杂超晶格子集电极
公开(公告)号：US07868335B1
公开(公告)日：2011-01-11
申请号：US12193436
申请日：2008-08-18
申请人： James Chingwei Li , Marko Sokolich , Tahir Hussain , David H. Chow
发明人： James Chingwei Li , Marko Sokolich , Tahir Hussain , David H. Chow
IPC分类号： H01L21/20
CPC分类号： H01L29/7371 , H01L29/155 , H01L29/365
摘要： A bipolar junction transistor having an emitter, a base, and a collector includes a stack of one or more layer sets adjacent the collector. Each layer set includes a first material having a first band gap, wherein the first material is highly doped, and a second material having a second band gap narrower than the first band gap, wherein the second material is at most lightly doped.
摘要翻译：具有发射极，基极和集电极的双极结型晶体管包括与集电极相邻的一个或多个层组的叠层。每个层组包括具有第一带隙的第一材料，其中所述第一材料是高度掺杂的，以及具有比所述第一带隙窄的第二带隙的第二材料，其中所述第二材料最多是轻掺杂的。

7. 发明授权

US08957455B1 Modulation doped super-lattice base for heterojunction bipolar transistors 有权
标题翻译：用于异质结双极晶体管的调制掺杂超晶格基极
公开(公告)号：US08957455B1
公开(公告)日：2015-02-17
申请号：US13438810
申请日：2012-04-03
申请人： James Chingwei Li , Marko Sokolich , Tahir Hussain , David H. Chow
发明人： James Chingwei Li , Marko Sokolich , Tahir Hussain , David H. Chow
IPC分类号： H01L29/737
CPC分类号： H01L29/155 , H01L29/201 , H01L29/7373
摘要： A heterojunction bipolar transistor (HBT) having an emitter, a base, and a collector, the base including a first semiconductor layer coupled to the collector, the first semiconductor layer having a first bandgap between a first conduction band and a first valence band and a second semiconductor layer coupled to the first semiconductor layer and having a second bandgap between a second conduction band and a second valence band, wherein the second valence band is higher than the first valence band and wherein the second semiconductor layer comprises a two dimensional hole gas and a third semiconductor layer coupled to the second semiconductor layer and having a third bandgap between a third conduction band and a third valence band, wherein the third valence band is lower than the second valence band and wherein the third semiconductor layer is coupled to the emitter.
摘要翻译：具有发射极，基极和集电极的异质结双极晶体管（HBT），所述基极包括耦合到集电极的第一半导体层，所述第一半导体层在第一导带和第一价带之间具有第一带隙，第二半导体层，其耦合到所述第一半导体层，并且在第二导带和第二价带之间具有第二带隙，其中所述第二价带高于所述第一价带，并且其中所述第二半导体层包括二维空穴气体，耦合到所述第二半导体层并且在第三导带和第三价带之间具有第三带隙的第三半导体层，其中所述第三价带低于所述第二价带，并且其中所述第三半导体层耦合到所述发射极。

8. 发明授权

US06591105B1 System and method for managing access in cellular network with multiple profiles 有权
标题翻译：用于管理具有多个配置文件的蜂窝网络中的接入的系统和方法
公开(公告)号：US06591105B1
公开(公告)日：2003-07-08
申请号：US09475099
申请日：1999-12-30
申请人： Tahir Hussain , Ranjit Bhatia
发明人： Tahir Hussain , Ranjit Bhatia
IPC分类号： H04Q720
CPC分类号： H04W8/18
摘要： A telecommunications system and method is disclosed for allowing business indoor mobile subscribers having multiple profiles to access both the business indoor network and the Public Land Mobile Network (PLMN) using one mobile terminal. To implement this dual-network service, a toggle feature can be provided to allow a business indoor mobile subscriber to choose between different subscriber profiles. Thus, if a mobile subscriber currently has the business indoor profile active and wishes to access the PLMN while roaming outside the business indoor cell(s), the mobile subscriber can initiate this toggle feature, and upon acknowledgment and authentication by the PLMN, the mobile subscriber can have access to the PLMN.
摘要翻译：公开了一种电信系统和方法，用于允许具有多个简档的商业室内移动用户使用一个移动终端访问商业室内网络和公共陆地移动网络（PLMN）。为了实现这种双网络服务，可以提供切换功能，以允许商业室内移动用户在不同的用户简档之间进行选择。因此，如果移动用户当前具有活动的商业室内简档并且希望在商业室内小区外部漫游时访问PLMN，则移动订户可以发起该切换特征，并且在PLMN确认和认证之后，移动台用户可以访问PLMN。

9. 发明授权

US06366781B1 System and method for time of arrival based positioning during handover 有权
标题翻译：移交期间到达时间定位的系统和方法
公开(公告)号：US06366781B1
公开(公告)日：2002-04-02
申请号：US09350042
申请日：1999-07-08
申请人： Tahir Hussain , Bagher Zadeh
发明人： Tahir Hussain , Bagher Zadeh
IPC分类号： H04Q720
CPC分类号： H04W36/32 , H04W36/38
摘要： A telecommunications system and method is disclosed for allowing an ongoing Time of Arrival (TOA) based positioning of a mobile station to proceed if a radio related handover has occurred before the expiration of a delta timer in a Base Station Controller (BSC). The BSC stores an HOTIMER value therein, which corresponds to the amount of time involved in a normal radio-related handover procedure from the sending of a Handover Command to the reception of a Handover Complete message. If the BSC delta timer is active, e.g., positioning is ongoing, and the BSC determines that a radio related handover is needed, the BSC checks the amount of time remaining in the BSC delta timer. If that amount is more than the HOTIMER, then the ongoing positioning is not canceled.
摘要翻译：公开了一种电信系统和方法，用于如果在基站控制器（BSC）中的增量计时器到期之前已经发生无线电相关的切换，则允许正在进行的移动台的定位（TOA）进行。 BSC存储其中的HOTIMER值，其对应于从发送切换命令到接收完成消息的正常无线电相关切换过程中涉及的时间量。如果BSC delta定时器是活动的，例如定位正在进行，并且BSC确定需要无线电相关的切换，则BSC检查BSC delta定时器中剩余的时间量。如果该数量超过HOTIMER，则不会取消正在进行的定位。

10. 发明授权

US06852615B2 Ohmic contacts for high electron mobility transistors and a method of making the same 有权
标题翻译：用于高电子迁移率晶体管的欧姆接触及其制造方法
公开(公告)号：US06852615B2
公开(公告)日：2005-02-08
申请号：US10457506
申请日：2003-06-09
申请人： Miroslav Micovic , Tahir Hussain , Paul Hashimoto , Janna Ruth Duvall
发明人： Miroslav Micovic , Tahir Hussain , Paul Hashimoto , Janna Ruth Duvall
IPC分类号： H01L21/285 , H01L29/20 , H01L29/417 , H01L29/45 , H10L21/338
CPC分类号： H01L29/452 , H01L21/28575 , H01L29/2003 , H01L29/41725 , Y10S438/975 , Y10S438/978
摘要： A process and related product in which ohmic contacts are formed in High Electron Mobility Transistors (HEMTs) employing compound substrates such as gallium nitride. An improved device and an improvement to a process for fabrication of ohmic contacts to GaN/AlGaN HEMTs using a novel two step resist process to fabricate the ohmic contacts are described. This novel two-step process consists of depositing a plurality of layers having compounds of Group III V elements on a substrate; patterning and depositing a first photoresist on one of the layers; etching recessed areas into this layer; depositing ohmic metals on the recessed areas; removing the first photoresist; patterning and depositing a second photoresist, smaller in profile than the first photoresist, on the layer; depositing more ohmic metal on the layer allowing for complete coverage of the recessed areas; removing the second photoresist, and annealing the semiconductor structure.
摘要翻译：在使用诸如氮化镓的复合衬底的高电子迁移率晶体管（HEMT）中形成欧姆接触的工艺及相关产品。描述了使用新颖的两步抗蚀剂工艺制造欧姆接触的改进的器件和用于制造对GaN / AlGaN HEMT的欧姆接触的工艺的改进。这种新型的两步法包括在基片上沉积多层具有IIIV族元素化合物的层; 在其中一层上图案化和沉积第一光致抗蚀剂; 将凹陷区域蚀刻到该层中; 在凹陷区域沉积欧姆金属; 去除第一光致抗蚀剂; 在该层上图案化和沉积比第一光致抗蚀剂更小的第二光致抗蚀剂; 在该层上沉积更多的欧姆金属，允许完全覆盖凹陷区域; 去除第二光致抗蚀剂，并退火半导体结构。

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