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1. 发明授权

US09189066B2 Touch panel and electronic device including the same 有权
标题翻译：触摸面板和电子设备包括相同
公开(公告)号：US09189066B2
公开(公告)日：2015-11-17
申请号：US12889800
申请日：2010-09-24
申请人： Tae-Sang Park , Seong-Taek Lim
发明人： Tae-Sang Park , Seong-Taek Lim
IPC分类号： G06F3/041 , G06F3/01
CPC分类号： G06F3/016
摘要： A touch panel and an electronic device having the same are provided. The touch panel includes a first substrate; a second substrate that is spaced apart from the first substrate by a gap, the second substrate including a touch surface; an array of driving electrode pairs that is arranged on the first substrate and the second substrate, and induces an electrical field locally between the first substrate and the second substrate when a driving voltage is applied thereto; and electro-rheological fluid that is filled in the gap between the first substrate and the second substrate, a viscosity of the electro-rheological fluid changing depending on the electrical field induced by the driving electrode pairs. An operating force or a return force is adjusted by controlling an application or release of the driving voltage.
摘要翻译：提供了触摸面板和具有该触摸面板的电子设备。触摸面板包括第一基板; 第二基板，其通过间隙与所述第一基板间隔开，所述第二基板包括触摸表面; 布置在所述第一基板和所述第二基板上的驱动电极对的阵列，并且当向其施加驱动电压时，在所述第一基板和所述第二基板之间局部引发电场; 以及填充在第一基板和第二基板之间的间隙中的电流变流体，电流变流体的粘度根据由驱动电极对感应的电场而变化。通过控制驱动电压的应用或释放来调节操作力或返回力。

2. 发明授权

US09209671B2 Stator module and motor including the same 有权
标题翻译：定子模块和电机包括相同
公开(公告)号：US09209671B2
公开(公告)日：2015-12-08
申请号：US13590691
申请日：2012-08-21
申请人： Tae-Sang Park , Hong-Soon Choi , Won-Ho Kim
发明人： Tae-Sang Park , Hong-Soon Choi , Won-Ho Kim
IPC分类号： H02K23/44 , H02K21/16
CPC分类号： H02K21/16 , H02K2201/06 , H02K2213/09
摘要： A stator module and a motor including the stator module are provided. The motor includes a stator and a stator module. The rotor includes a rotor core and a plurality of rotor poles arranged around a circumference of the rotor core, each generating a magnetic flux. The stator module includes a first stator and a second stator disposed coaxially with each other, each being rotatable in a circumferential direction and each having a coil wound thereon, and a rotation driving unit which controls a rotation of the first stator and the second stator through the same angle in opposite directions, thereby controlling a flux linkage of a rotor according to the rotational angle of each of the first stator and the second stator.
摘要翻译：提供了包括定子模块的定子模块和电动机。电动机包括定子和定子模块。转子包括转子芯和围绕转子芯的圆周设置的多个转子磁极，每个转子磁极产生磁通量。定子模块包括彼此同轴设置的第一定子和第二定子，每个定子可沿圆周方向旋转，并且每个都具有卷绕在其上的线圈，以及旋转驱动单元，其控制第一定子和第二定子的旋转通过在相反方向上具有相同的角度，从而根据第一定子和第二定子中的每一个的旋转角来控制转子的磁链。

3. 发明申请

US20090095952A1 Storage node, phase change memory device and methods of operating and fabricating the same 有权
公开(公告)号：US20090095952A1
公开(公告)日：2009-04-16
申请号：US12314310
申请日：2008-12-08
申请人： Dong-Seok Suh , Tae-Sang Park
发明人： Dong-Seok Suh , Tae-Sang Park
IPC分类号： H01L45/00
CPC分类号： H01L45/144 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/1286 , H01L45/1675 , H01L45/1683
摘要： A storage node, a phase change memory device, and methods of operating and fabricating the same are provided. The storage node may include a lower electrode, a phase change layer on the lower electrode and an upper electrode on the phase change layer, and the lower electrode and the upper electrode may be composed of thermoelectric materials having a melting point higher than that of the phase change layer, and having different conductivity types. An upper surface of the lower electrode may have a recessed shape, and a lower electrode contact layer may be provided between the lower electrode and the phase change layer. A thickness of the phase change layer may be about 100 nm or less, and the lower electrode may be composed of an n-type thermoelectric material, and the upper electrode may be composed of a p-type thermoelectric material, or they may be composed on the contrary to the above. Seeback coefficients of the lower electrode, the phase change layer, and the upper electrode may be different from each other.

4. 发明授权

US06393188B1 Dispersion compensation device and optical transmission system with the same 有权
标题翻译：色散补偿装置与光传输系统相同
公开(公告)号：US06393188B1
公开(公告)日：2002-05-21
申请号：US09388488
申请日：1999-09-02
申请人： Ki-Tae Jeong , Young-Tark Lee , Ho-Jin Jeong , Han-Kyo Seo , Jeong-U Jeon , Tae-Sang Park , Seok-Bong Ko , Yun-Hee Cho , Seong-Il Choi , Sang-Woork Park
发明人： Ki-Tae Jeong , Young-Tark Lee , Ho-Jin Jeong , Han-Kyo Seo , Jeong-U Jeon , Tae-Sang Park , Seok-Bong Ko , Yun-Hee Cho , Seong-Il Choi , Sang-Woork Park
IPC分类号： G02B616
CPC分类号： G02B6/29377 , G02B6/29394 , G02B6/4215
摘要： A dispersion compensation device and an optical transmission system are capable of simultaneously compensating a dispersion value and dispersion slope in a single-mode optical fiber in a high-speed long-distance optical transmission system and a wavelength division optical transmission system. The dispersion compensation device includes N number of component optical fibers arranged in a serial fashion, N being a positive integer more than one, wherein each of the component optical fiber has a different dispersion value per a unit length, a dispersion slope per a unit length, and a different length.
摘要翻译：色散补偿装置和光传输系统能够同时补偿高速长距离光传输系统和波分分光传输系统中的单模光纤中的色散值和色散斜率。色散补偿装置包括以串联方式布置的N个分量光纤，N是大于1的正整数，其中每个分量光纤每单位长度具有不同的色散值，每单位长度的色散斜率，和不同的长度。

5. 发明申请

US20120127789A1 STORAGE NODE, PHASE CHANGE MEMORY DEVICE AND METHODS OF OPERATING AND FABRICATING THE SAME 有权
标题翻译：存储节点，相变存储器件及其操作和制造方法
公开(公告)号：US20120127789A1
公开(公告)日：2012-05-24
申请号：US13348333
申请日：2012-01-11
申请人： Dong-Seok Suh , Tae-Sang Park
发明人： Dong-Seok Suh , Tae-Sang Park
IPC分类号： G11C11/00 , H01L21/8239
CPC分类号： H01L45/144 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/1286 , H01L45/1675 , H01L45/1683
摘要： A storage node may include a lower electrode, a phase change layer on the lower electrode and an upper electrode on the phase change layer, and the lower electrode and the upper electrode may be composed of thermoelectric materials having a melting point higher than that of the phase change layer, and having different conductivity types. An upper surface of the lower electrode may have a recessed shape, and a lower electrode contact layer may be provided between the lower electrode and the phase change layer.
摘要翻译：存储节点可以包括下电极，下电极上的相变层和相变层上的上电极，下电极和上电极可以由熔点高于相变层，并具有不同的导电类型。下电极的上表面可以具有凹陷形状，并且下电极接触层可以设置在下电极和相变层之间。

6. 发明授权

US08120004B2 Storage node, phase change memory device and methods of operating and fabricating the same 有权
标题翻译：存储节点，相变存储器件及其操作和制造方法
公开(公告)号：US08120004B2
公开(公告)日：2012-02-21
申请号：US12314310
申请日：2008-12-08
申请人： Dong-Seok Suh , Tae-Sang Park
发明人： Dong-Seok Suh , Tae-Sang Park
IPC分类号： H01L29/00
CPC分类号： H01L45/144 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/1286 , H01L45/1675 , H01L45/1683
摘要： A storage node, a phase change memory device, and methods of operating and fabricating the same are provided. The storage node may include a lower electrode, a phase change layer on the lower electrode and an upper electrode on the phase change layer, and the lower electrode and the upper electrode may be composed of thermoelectric materials having a melting point higher than that of the phase change layer, and having different conductivity types. An upper surface of the lower electrode may have a recessed shape, and a lower electrode contact layer may be provided between the lower electrode and the phase change layer. A thickness of the phase change layer may be about 100 nm or less, and the lower electrode may be composed of an n-type thermoelectric material, and the upper electrode may be composed of a p-type thermoelectric material, or they may be composed on the contrary to the above. Seeback coefficients of the lower electrode, the phase change layer, and the upper electrode may be different from each other.
摘要翻译：提供存储节点，相变存储器件及其操作和制造方法。存储节点可以包括下电极，下电极上的相变层和相变层上的上电极，下电极和上电极可以由熔点高于相变层，并具有不同的导电类型。下电极的上表面可以具有凹陷形状，并且下电极接触层可以设置在下电极和相变层之间。相变层的厚度可以为约100nm以下，下部电极可以由n型热电材料构成，上部电极可以由p型热电材料构成，也可以组成与上述相反。下电极，相变层和上电极的回吸系数可以彼此不同。

7. 发明申请

US20050284362A1 Apparatus for processing surface of substrate 失效
标题翻译：用于处理衬底表面的设备
公开(公告)号：US20050284362A1
公开(公告)日：2005-12-29
申请号：US11157522
申请日：2005-06-21
申请人： Tae-Gyu Kim , Tae-Sang Park
发明人： Tae-Gyu Kim , Tae-Sang Park
IPC分类号： B05C11/02 , B05C13/00 , H01L21/00 , H01L21/687
CPC分类号： H01L21/68735 , H01L21/6715
摘要： A substrate surface processing apparatus is provided. In the substrate surface processing apparatus, a spin chuck holds a substrate thereon by suction, spins the substrate, and moves up and down the substrate. An upper bowl and a lower bowl surround the spin chuck for receiving a processing solution by which the surface of the substrate is processed. An air outlet is positioned under the lower bowl for exhausting air from the upper and lower bowls. A flow separation protrusion is formed within the upper bowl. It separates an air flow around the substrate into an upward air flow and a downward air flow and exhausts the downward air flow through the air outlet.
摘要翻译：提供了一种基板表面处理装置。在基板表面处理装置中，旋转卡盘通过抽吸将基板保持在其上，旋转基板，并且在基板上上下移动。上碗和下碗围绕旋转卡盘，用于接收处理溶液，通过该处理溶液处理基材的表面。空气出口位于下碗下面，用于从上碗和下碗排出空气。在上碗中形成流动分离突起。它将基板周围的空气流分离成向上的空气流和向下的空气流，并排出通过出气口的向下空气流。

8. 发明授权

US07582163B2 Apparatus for processing surface of substrate 失效
标题翻译：用于处理衬底表面的设备
公开(公告)号：US07582163B2
公开(公告)日：2009-09-01
申请号：US11157522
申请日：2005-06-21
申请人： Tae-Gyu Kim , Tae-Sang Park
发明人： Tae-Gyu Kim , Tae-Sang Park
IPC分类号： B05C11/02 , B05B1/28 , B05B3/00
CPC分类号： H01L21/68735 , H01L21/6715
摘要： A substrate surface processing apparatus is provided. In the substrate surface processing apparatus, a spin chuck holds a substrate thereon by suction, spins the substrate, and moves up and down the substrate. An upper bowl and a lower bowl surround the spin chuck for receiving a processing solution by which the surface of the substrate is processed. An air outlet is positioned under the lower bowl for exhausting air from the upper and lower bowls. A flow separation protrusion is formed within the upper bowl. It separates an air flow around the substrate into an upward air flow and a downward air flow and exhausts the downward air flow through the air outlet.
摘要翻译：提供了一种基板表面处理装置。在基板表面处理装置中，旋转卡盘通过抽吸将基板保持在其上，旋转基板，并且在基板上上下移动。上碗和下碗围绕旋转卡盘，用于接收处理溶液，通过该处理溶液处理基材的表面。空气出口位于下碗下面，用于从上碗和下碗排出空气。在上碗中形成流动分离突起。它将基板周围的空气流分离成向上的空气流和向下的空气流，并排出通过出气口的向下空气流。

9. 发明授权

US07476892B2 Storage node, phase change memory device and methods of operating and fabricating the same 有权
标题翻译：存储节点，相变存储器件及其操作和制造方法
公开(公告)号：US07476892B2
公开(公告)日：2009-01-13
申请号：US11589056
申请日：2006-10-30
申请人： Dong-Seok Suh , Tae-Sang Park
发明人： Dong-Seok Suh , Tae-Sang Park
IPC分类号： H01L29/00 , H01L29/02 , H01L29/04 , H01L47/00 , H01L29/06
CPC分类号： H01L45/144 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/1286 , H01L45/1675 , H01L45/1683
摘要： A storage node, a phase change memory device, and methods of operating and fabricating the same are provided. The storage node may include a lower electrode, a phase change layer on the lower electrode and an upper electrode on the phase change layer, and the lower electrode and the upper electrode may be composed of thermoelectric materials having a melting point higher than that of the phase change layer, and having different conductivity types. An upper surface of the lower electrode may have a recessed shape, and a lower electrode contact layer may be provided between the lower electrode and the phase change layer. A thickness of the phase change layer may be about 100 nm or less, and the lower electrode may be composed of an n-type thermoelectric material, and the upper electrode may be composed of a p-type thermoelectric material, or they may be composed on the contrary to the above. Seeback coefficients of the lower electrode, the phase change layer, and the upper electrode may be different from each other.
摘要翻译：提供存储节点，相变存储器件及其操作和制造方法。存储节点可以包括下电极，下电极上的相变层和相变层上的上电极，下电极和上电极可以由熔点高于相变层，并具有不同的导电类型。下电极的上表面可以具有凹陷形状，并且下电极接触层可以设置在下电极和相变层之间。相变层的厚度可以为约100nm以下，下部电极可以由n型热电材料构成，上部电极可以由p型热电材料构成，也可以组成与上述相反。下电极，相变层和上电极的回吸系数可以彼此不同。

10. 发明授权

US07372125B2 Phase change memory devices using magnetic resistance effect, methods of operating and methods of fabricating the same 有权
标题翻译：使用磁阻效应的相变存储器件，操作方法及其制造方法
公开(公告)号：US07372125B2
公开(公告)日：2008-05-13
申请号：US11542204
申请日：2006-10-04
申请人： Jin-Seo Noh , Tae-Sang Park
发明人： Jin-Seo Noh , Tae-Sang Park
IPC分类号： H01L29/00
CPC分类号： H01L45/143 , G11C11/15 , G11C11/5678 , G11C11/5685 , G11C13/0004 , G11C13/0007 , G11C13/004 , G11C13/0069 , G11C2013/0054 , G11C2013/009 , G11C2213/31 , G11C2213/32 , G11C2213/79 , H01L27/228 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/148 , H01L45/1675
摘要： A phase change memory device includes a substrate, a switching element formed in the substrate and a storage node connected to the switching element. The storage node may include a lower electrode connected to the switching element, a first phase change layer formed on the lower electrode, a magnetic resistance layer formed on the first phase change layer, a second phase change layer formed on the magnetic resistance layer and an upper electrode formed on the second phase change layer.
摘要翻译：相变存储器件包括衬底，形成在衬底中的开关元件和连接到开关元件的存储节点。存储节点可以包括连接到开关元件的下电极，形成在下电极上的第一相变层，形成在第一相变层上的磁阻层，形成在磁阻层上的第二相变层和上电极形成在第二相变层上。

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