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    • 1. 发明授权
    • Touch panel and electronic device including the same
    • 触摸面板和电子设备包括相同
    • US09189066B2
    • 2015-11-17
    • US12889800
    • 2010-09-24
    • Tae-Sang ParkSeong-Taek Lim
    • Tae-Sang ParkSeong-Taek Lim
    • G06F3/041G06F3/01
    • G06F3/016
    • A touch panel and an electronic device having the same are provided. The touch panel includes a first substrate; a second substrate that is spaced apart from the first substrate by a gap, the second substrate including a touch surface; an array of driving electrode pairs that is arranged on the first substrate and the second substrate, and induces an electrical field locally between the first substrate and the second substrate when a driving voltage is applied thereto; and electro-rheological fluid that is filled in the gap between the first substrate and the second substrate, a viscosity of the electro-rheological fluid changing depending on the electrical field induced by the driving electrode pairs. An operating force or a return force is adjusted by controlling an application or release of the driving voltage.
    • 提供了触摸面板和具有该触摸面板的电子设备。 触摸面板包括第一基板; 第二基板,其通过间隙与所述第一基板间隔开,所述第二基板包括触摸表面; 布置在所述第一基板和所述第二基板上的驱动电极对的阵列,并且当向其施加驱动电压时,在所述第一基板和所述第二基板之间局部引发电场; 以及填充在第一基板和第二基板之间的间隙中的电流变流体,电流变流体的粘度根据由驱动电极对感应的电场而变化。 通过控制驱动电压的应用或释放来调节操作力或返回力。
    • 6. 发明授权
    • Storage node, phase change memory device and methods of operating and fabricating the same
    • 存储节点,相变存储器件及其操作和制造方法
    • US08120004B2
    • 2012-02-21
    • US12314310
    • 2008-12-08
    • Dong-Seok SuhTae-Sang Park
    • Dong-Seok SuhTae-Sang Park
    • H01L29/00
    • H01L45/144H01L27/2436H01L45/06H01L45/1233H01L45/1286H01L45/1675H01L45/1683
    • A storage node, a phase change memory device, and methods of operating and fabricating the same are provided. The storage node may include a lower electrode, a phase change layer on the lower electrode and an upper electrode on the phase change layer, and the lower electrode and the upper electrode may be composed of thermoelectric materials having a melting point higher than that of the phase change layer, and having different conductivity types. An upper surface of the lower electrode may have a recessed shape, and a lower electrode contact layer may be provided between the lower electrode and the phase change layer. A thickness of the phase change layer may be about 100 nm or less, and the lower electrode may be composed of an n-type thermoelectric material, and the upper electrode may be composed of a p-type thermoelectric material, or they may be composed on the contrary to the above. Seeback coefficients of the lower electrode, the phase change layer, and the upper electrode may be different from each other.
    • 提供存储节点,相变存储器件及其操作和制造方法。 存储节点可以包括下电极,下电极上的相变层和相变层上的上电极,下电极和上电极可以由熔点高于 相变层,并具有不同的导电类型。 下电极的上表面可以具有凹陷形状,并且下电极接触层可以设置在下电极和相变层之间。 相变层的厚度可以为约100nm以下,下部电极可以由n型热电材料构成,上部电极可以由p型热电材料构成,也可以组成 与上述相反。 下电极,相变层和上电极的回吸系数可以彼此不同。