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    • 3. 发明专利
    • Bonding system and bonding method
    • 粘接系统和粘接方法
    • JP2011119717A
    • 2011-06-16
    • JP2010247508
    • 2010-11-04
    • Bondtech IncTadatomo Sugaボンドテック株式会社唯知 須賀
    • SUGA TADATOMOYAMAUCHI AKIRA
    • H01L21/60
    • H01L24/80H01L24/81H01L2224/13021H01L2224/16111H01L2224/80895H01L2224/80896H01L2224/81895H01L2224/81896
    • PROBLEM TO BE SOLVED: To provide a bonding technology capable of securing the favorable bonding strength of both objects to be bonded without forming a resin layer necessarily when both the objects to be bonded are connected electrically.
      SOLUTION: In a bonding system, two objects 91 and 92 to be bonded each having a bonding part PT1 composed of one of Au(gold), Cu(copper) and Al(aluminum) and a bonding part PT2 composed of one of one of Si(silicon), SiO
      2 (silicon dioxide) or glass on bonding surfaces thereof are bonded. In the bonding system, each bonding surface of two objects 91 and 92 to be bonded is subjected to hydrophilic treatment by an energy wave, and then the two objects 91 and 92 to be bonded are pressed and bonded in a state that the bonding parts PT1 of the two objects 91 and 92 to be bonded and the bonding parts PT2 of the two objects 91 and 92 to be bonded are brought into contact with each other.
      COPYRIGHT: (C)2011,JPO&INPIT
    • 要解决的问题:提供一种接合技术,其能够在要被接合的物体两端电连接的同时,在不形成树脂层的情况下确保两接合物的良好的接合强度。 解决方案:在接合系统中,要结合的两个物体91和92具有由Au(金),Cu(铜)和Al(铝)之一组成的接合部分PT1和由一个 的Si(硅),SiO 2 (二氧化硅)之一或其结合面上的玻璃。 在接合系统中,要接合的两个物体91和92的每个接合表面通过能量波进行亲水处理,然后在待接合的两个物体91和92被压接和接合在接合部分PT1 要接合的两个物体91和92的两个物体91和92的接合部分PT2彼此接触。 版权所有(C)2011,JPO&INPIT
    • 8. 发明专利
    • Surface treatment method of chip, bonding method, and surface treatment device
    • 切片,接合方法和表面处理装置的表面处理方法
    • JP2013251404A
    • 2013-12-12
    • JP2012125236
    • 2012-05-31
    • Tadatomo Suga唯知 須賀Bondtech Incボンドテック株式会社
    • SUGA TADATOMOYAMAUCHI AKIRA
    • H01L21/60B23K20/00B23K20/24C23C8/16C23G5/00
    • H01L24/81
    • PROBLEM TO BE SOLVED: To provide a technique for bonding a plurality of chips to a substrate, such as a wafer, efficiently and stably by leaving no undesirable residue, such as an oxide, on a junction interface, thereby processing the chips in an oxidative atmosphere, such as the atmosphere, before and after surface treatment.SOLUTION: The surface treatment method of a metal region for bonding a chip having a chip side junction interface having one or a plurality of metal regions to a substrate includes a step S1 for preparing a chip where the surface of a metal region is coated with a volatile material, a step S2 for evaporating the volatile material and exposing the surface of the metal region, and a step S3 for performing surface activation by colliding particles having predetermined kinetic energy against the surface of the metal region in a non-oxidative atmosphere, following to the step for exposing the surface of the metal region, and further performing hydrophilic treatment by depositing the water.
    • 要解决的问题:提供一种通过在接合界面上不留下不需要的残留物(例如氧化物)将多个芯片与晶片等基板(例如晶片)结合而成的技术,从而将芯片加工成氧化 气氛,如大气,表面处理前后的处理。解决方案:将具有一个或多个金属区域的具有芯片侧接合界面的芯片接合到基板的金属区域的表面处理方法包括:步骤S1,用于制备 金属区域的表面涂覆有挥发性材料的芯片,用于蒸发挥发性材料并暴露金属区域的表面的步骤S2,以及通过使具有预定动能的颗粒碰撞而进行表面活化的步骤S3 在非氧化性气氛中的金属区域的表面,接着暴露金属区域的表面的步骤,并进一步进行亲水处理 放水。