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1. 发明授权

US6057636A Micro power switch using a cold cathode and a driving method thereof 失效
标题翻译：使用冷阴极的微功率开关及其驱动方法
公开(公告)号：US6057636A
公开(公告)日：2000-05-02
申请号：US931417
申请日：1997-09-16
申请人： Tadashi Sakai , Tomio Ono , Naoshi Sakuma , Hiromichi Ohashi , Kazuya Nakayama
发明人： Tadashi Sakai , Tomio Ono , Naoshi Sakuma , Hiromichi Ohashi , Kazuya Nakayama
IPC分类号： H01J1/304 , H01J19/24 , H01J21/10 , H03K17/54 , H01J1/46 , H01J1/02 , H01J1/05
CPC分类号： H01J21/105 , H03K17/545
摘要： The present invention provides a micro power switch comprising a cold cathode for emitting electrons, an anode for capturing the electrons emitted from the cold cathode, and a control electrode for controlling an amount of the electrons emitted from the cold cathode, wherein the cold cathode is made of material having a smaller electron emission barrier than the control electrode, the anode is applied with a positive potential in relation to the cold cathode, and the control electrode is applied with a potential equal to or lower than a potential of the cold cathode.
摘要翻译：本发明提供了一种微功率开关，其包括用于发射电子的冷阴极，用于捕获从冷阴极发射的电子的阳极和用于控制从冷阴极发射的电子的量的控制电极，其中冷阴极为由具有比控制电极更小的电子发射势垒的材料制成，阳极相对于冷阴极施加正电位，并且控制电极施加等于或低于冷阴极电位的电位。

2. 发明授权

US06323831B1 Electron emitting device and switching circuit using the same 失效
标题翻译：电子发射器件和使用其的开关电路
公开(公告)号：US06323831B1
公开(公告)日：2001-11-27
申请号：US09153086
申请日：1998-09-15
申请人： Tomio Ono , Tadashi Sakai , Naoshi Sakuma , Kazuya Nakayama
发明人： Tomio Ono , Tadashi Sakai , Naoshi Sakuma , Kazuya Nakayama
IPC分类号： G09G322
CPC分类号： H01J3/022 , H01J7/44 , H01J19/78
摘要： An electron emitting comprising an emitter electrode for emitting electrons when applied with an electric field, a gate electrode for extracting the electrons emitted from the emitter electrode, when applied with a voltage from a signal source, the voltage being positive with respect to the emitter electrode, an anode electrode connected to a load, for collecting the electrons extracted by the gate electrode, and for passing an anode current, and a gate resistor connected between the signal source and the gate electrode, for reducing a gate current flowing in the gate electrode, without changing an anode current flowing in the anode, and for lowering a gate voltage by utilizing a voltage drop cause by the gate current.
摘要翻译：一种电子发射器，包括用于在施加电场时发射电子的发射极电极，用于从发射极发射的电子提取的栅电极，当施加来自信号源的电压时，该电压相对于发射电极为正连接到负载的阳极，用于收集由栅电极提取的电子和用于通过阳极电流，以及连接在信号源和栅电极之间的栅极电阻，用于减少在栅电极中流动的栅极电流，而不改变在阳极中流动的阳极电流，并且通过利用由栅极电流引起的电压降降低栅极电压。

3. 发明授权

US06297586B1 Cold-cathode power switching device of field-emission type 失效
标题翻译：场致发射型冷阴极功率开关器件
公开(公告)号：US06297586B1
公开(公告)日：2001-10-02
申请号：US09263217
申请日：1999-03-05
申请人： Kazuya Nakayama , Tadashi Sakai , Naoshi Sakuma , Tomio Ono
发明人： Kazuya Nakayama , Tadashi Sakai , Naoshi Sakuma , Tomio Ono
IPC分类号： H01J116
CPC分类号： H01J21/105 , H01J1/3044
摘要： Disclosed herein are a cold-cathode power switching device and a method of manufacturing the same. The device has a high voltage resistance and can be manufactured with high yield though its element area is large to control large currents. In the method, arrays of miniature emitters are prepared, and the emitter arrays are adhered to a conductive substrate having trenches. The conductive substrate is cut along the trenches, forming a plurality of substrates. The gaps between these substrates are filled with insulating resin. As a result, a multi-module power switching device for controlling large currents is manufactured with high yield. Further, cold-cathode modules, each having a gate pad, are arranged on a cathode electrode made of a conducive substrate, insulating strips are formed on the cathode electrode, gate lines are formed on the insulating strips, and the gate pads are connected to the gate lines. The electrons emitted from the modules can be controlled at a time. Each module may have a cathode pad connected to a cathode line. Depressions are made in those part of an anode electrode which oppose the gate pads and cathode pads, providing a sufficient insulation distance between each emitter and the anode electrode. Hence, a cold-cathode power switching device of field emission type can be provided which has a high voltage resistance.
摘要翻译：本文公开了一种冷阴极电力开关装置及其制造方法。该器件具有高耐压性，并且可以以高产率制造，尽管其元件面积大以控制大电流。在该方法中，制备微型发射体的阵列，并且发射极阵列粘附到具有沟槽的导电衬底上。沿着沟槽切割导电衬底，形成多个衬底。这些基板之间的间隙用绝缘树脂填充。结果，以高产率制造用于控制大电流的多模块功率开关装置。此外，在由导电基板制成的阴极上配置有具有栅极焊盘的冷阴极模块，在阴极上形成绝缘条，在绝缘条上形成栅极线，栅极连接到门线。可以一次控制从模块发射的电子。每个模块可以具有连接到阴极线的阴极焊盘。在与栅极焊盘和阴极焊盘相对的阳极电极的那些部分进行抑制，从而在每个发射极和阳极电极之间提供足够的绝缘距离。因此，可以提供具有高耐电压性的场致发射型冷阴极功率开关器件。

4. 发明授权

US06469425B1 Electron emission film and field emission cold cathode device 有权
标题翻译：电子发射膜和场致发射冷阴极器件
公开(公告)号：US06469425B1
公开(公告)日：2002-10-22
申请号：US09501241
申请日：2000-02-10
申请人： Tadashi Sakai , Kazuya Nakayama , Li Zhang , Gehan Anil Joseph Amaratunga , Ioannis Alexandrou , Mark Baxendale , Nalin Rupasinghe
发明人： Tadashi Sakai , Kazuya Nakayama , Li Zhang , Gehan Anil Joseph Amaratunga , Ioannis Alexandrou , Mark Baxendale , Nalin Rupasinghe
IPC分类号： H01J130
CPC分类号： H01J9/022 , H01J1/30 , H01J2201/30446
摘要： An electron emission film includes a matrix consisting essentially of amorphous carbon and fullerene-like structures consisting essentially of a two-dimensional network of six-membered carbon rings. The fullerene-like structures are dispersed in the matrix and partially project from the matrix. The weight ratio of amorphous carbon to the fullerene-like structures is about 50:50 to 5:95. Amorphous carbon contains nitrogen acting as a donor at a concentration of about 4×10−7 to 10 atom %.
摘要翻译：电子发射膜包括基本上由无定形碳和富勒烯样结构组成的基体，其基本上由六元碳环的二维网络组成。富勒烯样结构分散在基质中并部分地从基质上突出。无定形碳与富勒烯样结构的重量比为约50:50至5:95。无定形碳含有以约4×10-7至10原子％浓度的作为供体的氮。

5. 发明授权

US07034346B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07034346B2
公开(公告)日：2006-04-25
申请号：US10445952
申请日：2003-05-28
申请人： Kazuya Nakayama , Satoshi Aida , Shigeo Kouzuki , Masaru Izumisawa
发明人： Kazuya Nakayama , Satoshi Aida , Shigeo Kouzuki , Masaru Izumisawa
IPC分类号： H01L27/148
CPC分类号： H01L29/7802 , H01L21/26586 , H01L29/0696 , H01L29/0847 , H01L29/0878 , H01L29/1095 , H01L29/41766 , H01L29/4232 , H01L29/42364 , H01L29/42376 , H01L29/4933 , H01L29/66712 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device according to an embodiment of the present invention has a gate electrode which is formed on a semiconductor substrate via a gate insulating film, and which has a slit portion; side wall films formed at both side faces of the gate electrode and at side walls of the slit portion, and which fill an interior of the slit portion and cover the gate insulating film directly beneath the slit portion; and an interlayer insulating film formed to cover the gate electrode and the side wall films.
摘要翻译：根据本发明的实施例的半导体器件具有通过栅极绝缘膜形成在半导体衬底上并具有狭缝部分的栅电极; 形成在栅电极的两个侧面和狭缝部的侧壁处的侧壁膜，并且填充狭缝部分的内部并在狭缝部分正下方覆盖栅极绝缘膜; 以及形成为覆盖栅电极和侧壁膜的层间绝缘膜。

6. 发明授权

US5793065A Insulated-gate thyristor 失效
公开(公告)号：US5793065A
公开(公告)日：1998-08-11
申请号：US483325
申请日：1995-06-07
申请人： Takashi Shinohe , Kazuya Nakayama , Minami Takeuchi , Masakazu Yamaguchi , Mitsuhiko Kitagawa , Ichiro Omura , Akio Nakagawa
发明人： Takashi Shinohe , Kazuya Nakayama , Minami Takeuchi , Masakazu Yamaguchi , Mitsuhiko Kitagawa , Ichiro Omura , Akio Nakagawa
IPC分类号： H01L29/423 , H01L29/745 , H01L29/749 , H01L29/74 , H01L31/111
CPC分类号： H01L29/7455 , H01L29/42308 , H01L29/749
摘要： Disclosed herein is an insulated-gate thyristor comprising a base layer of a first conductivity type, having first and second major surfaces, a first main-electrode region of the first conductivity type, formed in the first major surface of the base layer, a second main-electrode region of a second conductivity type, formed in the second major surface of the base layer, at least a pair of grooves extending from the first main-electrode region into the base layer, and opposing each other and spaced apart by a predetermined distance, insulated gate electrodes formed within the grooves, and a turn-off insulated-gate transistor structure for releasing carriers of the second conductivity type from the base layer.

7. 发明申请

US20050258503A1 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050258503A1
公开(公告)日：2005-11-24
申请号：US11186838
申请日：2005-07-22
申请人： Kazuya Nakayama , Satoshi Aida , Shigeo Kouzuki , Masaru Izumisawa
发明人： Kazuya Nakayama , Satoshi Aida , Shigeo Kouzuki , Masaru Izumisawa
IPC分类号： H01L21/265 , H01L21/336 , H01L29/06 , H01L29/08 , H01L29/10 , H01L29/423 , H01L29/49 , H01L29/78 , H01L29/788
CPC分类号： H01L29/7802 , H01L21/26586 , H01L29/0696 , H01L29/0847 , H01L29/0878 , H01L29/1095 , H01L29/41766 , H01L29/4232 , H01L29/42364 , H01L29/42376 , H01L29/4933 , H01L29/66712 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device according to an embodiment of the present invention has a gate electrode which is formed on a semiconductor substrate via a gate insulating film, and which has a slit portion; side wall films formed at both side faces of the gate electrode and at side walls of the slit portion, and which fill an interior of the slit portion and cover the gate insulating film directly beneath the slit portion; and an interlayer insulating film formed to cover the gate electrode and the side wall films.
摘要翻译：根据本发明的实施例的半导体器件具有通过栅极绝缘膜形成在半导体衬底上并具有狭缝部分的栅电极; 形成在栅电极的两个侧面和狭缝部的侧壁处的侧壁膜，并且填充狭缝部分的内部并在狭缝部分正下方覆盖栅极绝缘膜; 以及形成为覆盖栅电极和侧壁膜的层间绝缘膜。

8. 发明授权

US06236069B1 Insulated-gate thyristor 失效
标题翻译：绝缘栅晶闸管
公开(公告)号：US06236069B1
公开(公告)日：2001-05-22
申请号：US09102360
申请日：1998-06-23
申请人： Takashi Shinohe , Kazuya Nakayama , Minami Takeuchi , Masakazu Yamaguchi , Mitsuhiko Kitagawa , Ichiro Omura , Akio Nakagawa
发明人： Takashi Shinohe , Kazuya Nakayama , Minami Takeuchi , Masakazu Yamaguchi , Mitsuhiko Kitagawa , Ichiro Omura , Akio Nakagawa
IPC分类号： H01L2974
CPC分类号： H01L29/7455 , H01L29/42308 , H01L29/749
摘要： Disclosed herein is an insulated-gate thyristor comprising a base layer of a first conductivity type, having first and second major surfaces, a first main-electrode region of the first conductivity type, formed in the first major surface of the base layer, a second main-electrode region of a second conductivity type, formed in the second major surface of the base layer, at least a pair of grooves extending from the first main-electrode region into the base layer, and opposing each other and spaced apart by a predetermined distance, insulated gate electrodes formed within the grooves, and a turn-off insulated-gate transistor structure for releasing carriers of the second conductivity type from the base layer.
摘要翻译：本文公开了一种绝缘栅极晶闸管，其包括第一导电类型的基极层，具有第一和第二主表面，形成在基底层的第一主表面中的第一导电类型的第一主电极区域，第二导电类型的第二主表面形成在基底层的第二主表面的第二导电类型的主电极区域，至少一对从第一主电极区域延伸到基底层中并且彼此相对并间隔开预定的凹槽距离，形成在沟槽内的绝缘栅电极，以及用于从基层释放第二导电类型的载流子的关断绝缘栅晶体管结构。

9. 发明授权

US5464994A Insulated-gate thyristor 失效
标题翻译：绝缘栅晶闸管
公开(公告)号：US5464994A
公开(公告)日：1995-11-07
申请号：US291754
申请日：1994-08-16
申请人： Takashi Shinohe , Kazuya Nakayama , Minami Takeuchi , Masakazu Yamaguchi , Mitsuhiko Kitagawa , Ichiro Omura , Akio Nakagawa
发明人： Takashi Shinohe , Kazuya Nakayama , Minami Takeuchi , Masakazu Yamaguchi , Mitsuhiko Kitagawa , Ichiro Omura , Akio Nakagawa
IPC分类号： H01L29/423 , H01L29/745 , H01L29/749 , H01L29/74
CPC分类号： H01L29/7455 , H01L29/42308 , H01L29/749
摘要： Disclosed herein is an insulated-gate thyristor comprising a base layer of a first conductivity type, having first and second major surfaces, a first main-electrode region of the first conductivity type, formed in the first major surface of the base layer, a second main-electrode region of a second conductivity type, formed in the second major surface of the base layer, at least a pair of grooves extending from the first main-electrode region into the base layer, and opposing each other and spaced apart by a predetermined distance, insulated gate electrodes formed within the grooves, and a turn-off insulated-gate transistor structure for releasing carriers of the second conductivity type from the base layer.
摘要翻译：本文公开了一种绝缘栅极晶闸管，其包括第一导电类型的基极层，具有第一和第二主表面，形成在基底层的第一主表面中的第一导电类型的第一主电极区域，第二导电类型的第二主表面形成在基底层的第二主表面的第二导电类型的主电极区域，至少一对从第一主电极区域延伸到基底层中并且彼此相对并间隔开预定的凹槽距离，形成在沟槽内的绝缘栅电极，以及用于从基层释放第二导电类型的载流子的关断绝缘栅晶体管结构。

10. 发明授权

US5022937A Colored zinc coating 失效
标题翻译：有色锌涂层
公开(公告)号：US5022937A
公开(公告)日：1991-06-11
申请号：US116613
申请日：1987-11-03
申请人： Masatoshi Tomita , Susumu Yamamoto , Chikara Tominaga , Kazuya Nakayama
发明人： Masatoshi Tomita , Susumu Yamamoto , Chikara Tominaga , Kazuya Nakayama
IPC分类号： C23C2/06 , C23C2/08 , C23C2/26 , C23C2/28 , C23C4/08 , C23C28/00
CPC分类号： C23C4/08 , C23C2/06 , C23C2/08 , C23C2/26 , C23C2/28
摘要： This invention permits, in a colored galvanized coating using Ti--Zn, Mn--Zn, Ti--Mn--Zn, (Ti, Mn)--(Cu, Ni, Cr)--Zn, etc., to clearly and stably develop yellow, purple, green, blue or other color by controlling the composition of a galvanizing bath and oxidizing conditions. Further, gold, dark red, olive gray and iridescence color which have not yet obtained can be developed. The color development effected by this invention is clearer than conventional. Instead of galvanizing, the spraying process may be adopted. The surface painting on the colored zinc coating is effective.
摘要翻译：本发明允许在使用Ti-Zn，Mn-Zn，Ti-Mn-Zn，（Ti，Mn） - （Cu，Ni，Cr）-Zn等的有色镀锌涂层中，紫色，绿色，蓝色或其他颜色，通过控制镀锌浴的组成和氧化条件。此外，可以开发尚未获得的金，深红，橄榄灰和彩虹色。通过本发明实现的显色比常规更清楚。代替镀锌，可以采用喷涂工艺。有色锌涂层上的表面喷涂是有效的。

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