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1. 发明专利

AU728597B2 Eye test method using red and green marks and red/green tester used in the eye test method 未知
公开(公告)号：AU728597B2
公开(公告)日：2001-01-11
申请号：AU7870398
申请日：1997-12-22
申请人： AKIO NAKAGAWA
发明人： NAKAGAWA AKIO
IPC分类号： A61B3/10 , A61B3/02 , A61B3/032
摘要： A red/green tester judging whether a glass lens or a contact lens is correct or not, or suitable or too strong, has a case (1). The inside of the case (1) is divided into left and right divisions by a partition plate (2). A red test lamp (3R) and a green test lamp (3G) are provided on the left and right sides of the partition plate (2), respectively. A red film (5) and a green film (6) are provided on the front of the case (1) on the left and right sides of the partition plate (2) respectively through an opal screen (4). Black fixed marks (8 and 9) which have identical patterns and sizes are provided in the positions corresponding to the lamps (3R and 3G) on the fronts of both films (5 and 6). A switching circuit which, after operating or flashing the lamp (3G) for a certain time, operates the lamp (3G) and the lamp 3R simultaneously is provided. Thus, the red/green mark test can be carried out while the adjustment of the crystalline lens which is performed by the subject unconsciously can be avoided as much as possible.

2. 发明专利

AU7870398A Eye test method using red and green marks and red/green tester used in the eye test method 未知
公开(公告)号：AU7870398A
公开(公告)日：1998-07-17
申请号：AU7870398
申请日：1997-12-22
申请人： AKIO NAKAGAWA
发明人： NAKAGAWA AKIO
IPC分类号： A61B3/10 , A61B3/02 , A61B3/032
摘要： A red/green tester judging whether a glass lens or a contact lens is correct or not, or suitable or too strong, has a case (1). The inside of the case (1) is divided into left and right divisions by a partition plate (2). A red test lamp (3R) and a green test lamp (3G) are provided on the left and right sides of the partition plate (2), respectively. A red film (5) and a green film (6) are provided on the front of the case (1) on the left and right sides of the partition plate (2) respectively through an opal screen (4). Black fixed marks (8 and 9) which have identical patterns and sizes are provided in the positions corresponding to the lamps (3R and 3G) on the fronts of both films (5 and 6). A switching circuit which, after operating or flashing the lamp (3G) for a certain time, operates the lamp (3G) and the lamp 3R simultaneously is provided. Thus, the red/green mark test can be carried out while the adjustment of the crystalline lens which is performed by the subject unconsciously can be avoided as much as possible.

3. 发明专利

JPS61106127A Sight examination apparatus using one character 失效
标题翻译：使用一个字符的检测装置
公开(公告)号：JPS61106127A
公开(公告)日：1986-05-24
申请号：JP22847284
申请日：1984-10-29
申请人： Morikawa Seisakusho Kk , Akio Nakagawa
发明人： TANIGUCHI KAZUO , NAKAGAWA AKIO
IPC分类号： A61B3/02

4. 发明专利

JPS59156323A Apparatus for measuring near point distance of eye 失效
标题翻译：用于测量眼睛近点距离的装置
公开(公告)号：JPS59156323A
公开(公告)日：1984-09-05
申请号：JP3260283
申请日：1983-02-26
申请人： Akio Nakagawa
发明人： NAKAGAWA AKIO
IPC分类号： A61B3/09 , G01B11/00

5. 发明授权

US08854033B2 Current sensor, inverter circuit, and semiconductor device having the same 有权
标题翻译：电流传感器，逆变器电路和具有相同功能的半导体器件
公开(公告)号：US08854033B2
公开(公告)日：2014-10-07
申请号：US13150764
申请日：2011-06-01
申请人： Satoshi Shiraki , Norihito Tokura , Shigeki Takahashi , Masahiro Yamamoto , Akira Yamada , Hiroyasu Kudo , Youichi Ashida , Akio Nakagawa
发明人： Satoshi Shiraki , Norihito Tokura , Shigeki Takahashi , Masahiro Yamamoto , Akira Yamada , Hiroyasu Kudo , Youichi Ashida , Akio Nakagawa
IPC分类号： G01R1/20
CPC分类号： H01L27/1203 , G01R19/0092 , H01L21/76283 , H01L23/585 , H01L29/0696 , H01L29/405 , H01L29/7394 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device having a lateral semiconductor element includes a semiconductor substrate, a first electrode on the substrate, a second electrode on the substrate, and an isolation structure located in the substrate to divide the substrate into a first island and a second island electrically insulated from the first island. The lateral semiconductor element includes a main cell located in the first island and a sense cell located in the second island. The main cell causes a first current to flow between the first electrode and the second electrode so that the first current flows in a lateral direction along the surface of the substrate. The first current is detected by detecting a second current flowing though the sense cell.
摘要翻译：具有横向半导体元件的半导体器件包括半导体衬底，衬底上的第一电极，衬底上的第二电极和位于衬底中的隔离结构，以将衬底分成第一岛和与第一岛电绝缘的第二岛第一个岛屿。横向半导体元件包括位于第一岛中的主单元和位于第二岛中的感测单元。主电池使得第一电流在第一电极和第二电极之间流动，使得第一电流沿着基板的表面在横向方向上流动。通过检测流过感测单元的第二电流来检测第一电流。

6. 发明申请

US20120047418A1 INFORMATION PROCESSING APPARATUS, INFORMATION PROCESSING METHOD, AND STORAGE MEDIUM 有权
标题翻译：信息处理设备，信息处理方法和存储介质
公开(公告)号：US20120047418A1
公开(公告)日：2012-02-23
申请号：US13175556
申请日：2011-07-01
申请人： Akio Nakagawa , Hisashi Ishikawa
发明人： Akio Nakagawa , Hisashi Ishikawa
IPC分类号： G06F11/10
CPC分类号： G06K15/408 , G06F13/00 , G06K15/40 , G06T1/60 , H04N1/32561 , H04N1/32593 , H04N1/405 , H04N1/4052
摘要： An information processing apparatus comprising: a reception unit adapted to receive a packet containing first data to be stored in a storage unit, a first address indicating an address of second data held in the storage unit, and a second address indicating an address at which the first data is to be written in the storage unit; an access unit adapted to read out the second data from the storage unit based on the first address, and write the first data in the storage unit based on the second address; and a transmission unit adapted to replace the first data of the packet received by the reception unit with the second data read out by the access unit, and transmit the packet.
摘要翻译：一种信息处理装置，包括：接收单元，适于接收包含要存储在存储单元中的第一数据的分组，指示保存在所述存储单元中的第二数据的地址的第一地址，以及指示所述第二地址，第一数据将被写入存储单元; 基于所述第一地址从所述存储单元读出所述第二数据的存取单元，基于所述第二地址将所述第一数据写入所述存储单元; 以及发送单元，其适于将接收单元接收到的分组的第一数据替换为由接入单元读出的第二数据，并发送分组。

7. 发明申请

US20120032313A1 SEMICONDUCTOR DEVICE HAVING LATERAL DIODE 有权
标题翻译：具有横向二极管的半导体器件
公开(公告)号：US20120032313A1
公开(公告)日：2012-02-09
申请号：US13197719
申请日：2011-08-03
申请人： Takao YAMAMOTO , Norihito Tokura , Hisato Kato , Akio Nakagawa
发明人： Takao YAMAMOTO , Norihito Tokura , Hisato Kato , Akio Nakagawa
IPC分类号： H01L29/861
CPC分类号： H01L29/868 , H01L27/0664 , H01L29/0615 , H01L29/0692 , H01L29/0878 , H01L29/1095 , H01L29/405 , H01L29/42368 , H01L29/7394 , H01L29/7824
摘要： A semiconductor device having a lateral diode includes a semiconductor layer, a first semiconductor region in the semiconductor layer, a contact region having an impurity concentration greater than that of the first semiconductor region, a second semiconductor region located in the semiconductor layer and separated from the contact region, a first electrode electrically connected through the contact region to the first semiconductor region, and a second electrode electrically connected to the second semiconductor region. The second semiconductor region includes a low impurity concentration portion, a high impurity concentration portion, and an extension portion. The second electrode forms an ohmic contact with the high impurity concentration portion. The extension portion has an impurity concentration greater than that of the low impurity concentration portion and extends in a thickness direction of the semiconductor layer.
摘要翻译：具有横向二极管的半导体器件包括半导体层，半导体层中的第一半导体区域，具有大于第一半导体区域的杂质浓度的杂质浓度的接触区域，位于半导体层中并与该半导体层分离的第二半导体区域接触区域，通过接触区域电连接到第一半导体区域的第一电极和与第二半导体区域电连接的第二电极。第二半导体区域包括低杂质浓度部分，高杂质浓度部分和延伸部分。第二电极与高杂质浓度部分形成欧姆接触。延伸部分的杂质浓度大于低杂质浓度部分的杂质浓度，并且在半导体层的厚度方向上延伸。

8. 发明申请

US20110298446A1 CURRENT SENSOR, INVERTER CIRCUIT, AND SEMICONDUCTOR DEVICE HAVING THE SAME 有权
标题翻译：电流传感器，逆变器电路和具有该电流传感器的半导体器件
公开(公告)号：US20110298446A1
公开(公告)日：2011-12-08
申请号：US13150764
申请日：2011-06-01
申请人： Satoshi SHIRAKI , Norihito Tokura , Shigeki Takahashi , Masahiro Yamamoto , Akira Yamada , Hiroyasu Kudo , Youichi Ashida , Akio Nakagawa
发明人： Satoshi SHIRAKI , Norihito Tokura , Shigeki Takahashi , Masahiro Yamamoto , Akira Yamada , Hiroyasu Kudo , Youichi Ashida , Akio Nakagawa
IPC分类号： G01R1/20 , H01L29/739
CPC分类号： H01L27/1203 , G01R19/0092 , H01L21/76283 , H01L23/585 , H01L29/0696 , H01L29/405 , H01L29/7394 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device having a lateral semiconductor element includes a semiconductor substrate, a first electrode on the substrate, a second electrode on the substrate, and an isolation structure located in the substrate to divide the substrate into a first island and a second island electrically insulated from the first island. The lateral semiconductor element includes a main cell located in the first island and a sense cell located in the second island. The main cell causes a first current to flow between the first electrode and the second electrode so that the first current flows in a lateral direction along the surface of the substrate. The first current is detected by detecting a second current flowing though the sense cell.
摘要翻译：具有横向半导体元件的半导体器件包括半导体衬底，衬底上的第一电极，衬底上的第二电极和位于衬底中的隔离结构，以将衬底分成第一岛和与第一岛电绝缘的第二岛第一个岛屿。横向半导体元件包括位于第一岛中的主单元和位于第二岛中的感测单元。主电池使得第一电流在第一电极和第二电极之间流动，使得第一电流沿着基板的表面在横向方向上流动。通过检测流过感测单元的第二电流来检测第一电流。

9. 发明授权

US08031954B2 Image encoding apparatus and control method thereof using prediction encoding and pixel classification 有权
标题翻译：图像编码装置及其使用预测编码和像素分类的控制方法
公开(公告)号：US08031954B2
公开(公告)日：2011-10-04
申请号：US12107844
申请日：2008-04-23
申请人： Akio Nakagawa , Hisashi Ishikawa , Ryoko Mise
发明人： Akio Nakagawa , Hisashi Ishikawa , Ryoko Mise
IPC分类号： G06K9/36 , G06K9/46
CPC分类号： H04N19/93 , H04N19/102 , H04N19/105 , H04N19/12 , H04N19/146 , H04N19/17 , H04N19/176 , H04N19/182 , H04N19/186 , H04N19/593 , H04N19/60
摘要： According to this invention, encoded data are generated by sorting pixel data in a block according to different scan start positions and different scan routes upon generating encoded data for respective blocks, and encoded data with a smallest data amount of these encoded data is outputted. To this end, a block generation unit inputs blocks each defined by 8×8 pixels from image data to be encoded. Four encoding processing units respectively sort inputted 8×8 pixels according to the information stored in scan start position information storage units and scan route information storage units. The respective encoding processing units generate encoded data based on the sorted pixel data. A selector selects and outputs encoded data with a smallest data size from those generated by the encoding processing units.
摘要翻译：根据本发明，通过根据不同的扫描开始位置和不同的扫描路径对块中的像素数据进行排序，生成编码数据，生成各个块的编码数据，并输出这些编码数据的最小数据量的编码数据。为此，块生成单元从要编码的图像数据输入由8×8像素定义的块。四个编码处理单元根据存储在扫描开始位置信息存储单元和扫描路径信息存储单元中的信息分别输入8×8像素。相应的编码处理单元基于分类的像素数据生成编码数据。选择器选择并输出具有由编码处理单元生成的数据的最小数据大小的编码数据。

10. 发明授权

US07564097B2 Trench-gated MOSFET including schottky diode therein 有权
标题翻译：沟槽栅MOSFET，其中包括肖特基二极管
公开(公告)号：US07564097B2
公开(公告)日：2009-07-21
申请号：US11740045
申请日：2007-04-25
申请人： Syotaro Ono , Akio Nakagawa , Yusuke Kawaguchi , Yoshihiro Yamaguchi
发明人： Syotaro Ono , Akio Nakagawa , Yusuke Kawaguchi , Yoshihiro Yamaguchi
IPC分类号： H01L29/94
CPC分类号： H01L29/7813 , H01L29/1095
摘要： Disclosed is a trench MOSFET, including: a trench gate structure having a gate electrode and a gate insulating film; an n-type diffusion layer formed to face the gate electrode via the gate insulating film at an upper portion of the trench; a p-type base layer formed to face the gate electrode via the gate insulating film at a lower portion than the upper portion; an n-type epitaxial layer locating to face the gate electrode via the gate insulating film at a further lower portion than the lower portion; a metal layer formed departing from the trench in parallel with a depth direction of the trench, penetrating the n-type diffusion layer and the p-type base layer, to reach the n-type epitaxial layer; and a p-type layer with higher impurity concentration than the p-type base layer, locating to be in contact with the p-type base layer and the metal layer.
摘要翻译：公开了一种沟槽MOSFET，其包括：具有栅极电极和栅极绝缘膜的沟槽栅极结构; 形成为在沟槽的上部经由栅极绝缘膜与栅电极对置的n型扩散层; p型基底层，其在比上部更低的一部分处经由栅极绝缘膜形成为面对栅电极; n型外延层，其定位成在比下部更下方的一部分经由栅极绝缘膜面对栅电极; 与沟槽的深度方向平行地形成的穿过n型扩散层和p型基底层的金属层，以到达n型外延层; 以及比p型基底层高的杂质浓度的p型层，与p型基底层和金属层接触。

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