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    • 7. 发明授权
    • Reciprocating compressor
    • 往复式压缩机
    • US6022199A
    • 2000-02-08
    • US63250
    • 1998-04-20
    • Kiyoshi YoshiiKatsutoshi EnomotoKatsuhiko AraiHisao Ichikawa
    • Kiyoshi YoshiiKatsutoshi EnomotoKatsuhiko AraiHisao Ichikawa
    • F04B27/08F04B39/10F04B1/12
    • F04B39/1066F04B39/1086Y10T137/7843
    • A reciprocating compressor is provided. Compression chambers are formed on at least one end of pistons slidably received within respective cylinder bores of a cylinder block. A cylinder head is secured to the cylinder block and has a high-pressure chamber and a low-pressure chamber formed therein. A separating member is arranged between the cylinder block and the cylinder head. The separating member has a valve sheet, a valve plate, a stopper plate. The valve sheet is formed with suction valves and discharge valves. The valve plate is arranged between the valve sheet and the cylinder block, and formed with refrigerant outlet ports and relief holes each opening into a corresponding one of the compression chambers, for communicating with a corresponding one of refrigerant inlet ports formed through the stopper plate when the corresponding suction valve opens. The relief holes and/or refrigerant outlet ports each have a projecting portion formed integrally with a portion of a rim of an opening thereof in a manner bent in a direction of thickness of the valve plate. The stopper plate is arranged between the valve sheet and the cylinder head and formed with the refrigerant inlet ports, refrigerant outlet passages each opening into the high-pressure chamber for communicating with a corresponding one of the refrigerant outlet ports when a corresponding one of the discharge valves opens, and stoppers each setting a limit to an amount of opening of a corresponding one of the discharge valves.
    • 提供往复式压缩机。 压缩室形成在可滑动地容纳在气缸体的相应气缸孔内的活塞的至少一端。 气缸盖固定到气缸体上,并具有形成在其中的高压室和低压室。 在气缸体和气缸盖之间设置分离构件。 分离构件具有阀片,阀板,止动板。 阀片形成有吸气阀和排气阀。 阀板布置在阀片和气缸体之间,并且形成有制冷剂出口和排气孔,每个开口通向相应的一个压缩室,用于与通过止动板形成的相应的一个制冷剂入口连通, 相应的吸入阀打开。 排气孔和/或制冷剂出口各自具有与阀板的厚度方向弯曲的方式与其开口的边缘的一部分一体地形成的突出部。 止动板布置在阀片和气缸盖之间,并且形成有制冷剂入口,制冷剂出口通道各自打开到高压室中,用于与对应的一个制冷剂出口连通,当相应的一个排出口 阀打开,并且每个止动件设定对应的一个排出阀的开度的极限。
    • 8. 发明授权
    • Reduction-reoxidation type semiconductor ceramic capacitor and method of
manufacturing thereof
    • 还原再氧化型半导体陶瓷电容器及其制造方法
    • US4747014A
    • 1988-05-24
    • US018893
    • 1987-02-25
    • Daisuke KainoKatsuhiko AraiJunichi WatanabeKazuo Sasazawa
    • Daisuke KainoKatsuhiko AraiJunichi WatanabeKazuo Sasazawa
    • H01G4/008H01G4/12H01G4/28H01G4/10H01G7/00
    • H01G4/1272Y10T29/435
    • A reduction-reoxidation type semiconductor ceramic capacitor according to the first invention includes: semiconductor ceramic; a reoxidated dielectric layer formed on the surface of the semiconductor ceramic; at least a pair of electrodes formed on the reoxidated dielectric layer; one of the electrodes being formed with an electrical conductor containing one kind or more of metals or metal compounds selected from Zn, Al, Ni, and Sn; one kind or more of metals in extremely small quantities selected from the metals being diffused into the interior of a portion, in contact with said electrode, of the reoxidated dielectric layer.In addition, a method of manufacturing of the reduction-reoxidation type semiconductor ceramic capacitor comprising the steps of: rendering the semiconductor ceramic to a heat treatment at temperature of from 950.degree. to 1200.degree. C. to thereby form the reoxidated dielectric layer; providing an electrode material layer containing one kind or more of metals or metal compounds selected from Zn, Al, Ni and Sn on a portion forming one of said electrodes; and baking said electrode material layer so provided at temperature of from 600.degree. to 850.degree. C. to thereby form the electrode.
    • 根据第一发明的还原再氧化型半导体陶瓷电容器包括:半导体陶瓷; 形成在半导体陶瓷的表面上的再氧化介电层; 形成在所述再氧化介电层上的至少一对电极; 其中一个电极由含有一种或多种选自Zn,Al,Ni和Sn的金属或金属化合物的电导体形成; 选自金属中的极少量的金属中的一种以上的金属被扩散到与所述电极接触的与再氧化的介电层接触的部分的内部。 此外,还原再氧化型半导体陶瓷电容器的制造方法包括以下步骤:使半导体陶瓷在950〜1200℃的温度下进行热处理,从而形成再氧化的介电层; 在形成所述电极之一的部分上提供含有选自Zn,Al,Ni和Sn中的一种或多种金属或金属化合物的电极材料层; 并在600℃至850℃的温度下烘烤所述电极材料层,从而形成电极。