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1. 发明专利

JP2764600B2 失效
公开(公告)号：JP2764600B2
公开(公告)日：1998-06-11
申请号：JP3714489
申请日：1989-02-16
申请人： MIKOSHIBA NOBUO , OOMI TADAHIRO , TSUBOCHI KAZUO , EKI KAZUYA
发明人： MIKOSHIBA NOBUO , OOMI TADAHIRO , TSUBOCHI KAZUO , EKI KAZUYA
IPC分类号： G01N23/225 , G01N23/20 , G01N23/201

2. 发明专利

JPH04324934A SEMICONDUCTOR CIRCUIT DEVICE AND WIRING THEREOF 失效
公开(公告)号：JPH04324934A
公开(公告)日：1992-11-13
申请号：JP9555891
申请日：1991-04-25
申请人： TSUBOCHI KAZUO
发明人： TSUBOUCHI KAZUO , EKI KAZUYA , HIURA YOHEI , OMI TADAHIRO
IPC分类号： H01L21/3205 , H01L23/52 , H01L23/532
摘要： PURPOSE:To manufacture the wiring making excellent migration resistance giving high yield as for the title wiring for semiconductor circuit device. CONSTITUTION:Within the title wiring comprising crystalline material to be connected to a semiconductor element, the crystal axial direction of the nearest atoms arranged in the single crystals 30, 31, 32, 33 comprising the crystalline material and the direction 40 of the current fed to the wiring are intersected with each other within the angle range not exceeding 22.5 deg..

3. 发明专利

JPH02216041A REFLECTED ELECTRON BEAM DIFFRACTION APPARATUS 失效
公开(公告)号：JPH02216041A
公开(公告)日：1990-08-28
申请号：JP3714389
申请日：1989-02-16
申请人： MIKOSHIBA NOBUO , OMI TADAHIRO , TSUBOCHI KAZUO , EKI KAZUYA
发明人： MIKOSHIBA NOBUO , OMI TADAHIRO , TSUBOUCHI KAZUO , EKI KAZUYA
IPC分类号： G01N23/225 , G01N23/20 , G01N23/201 , H01J37/295
摘要： PURPOSE:To observe a midway development of a variation in a grain boundary of a sample by performing an arithmetic processing of a diffraction pattern with the irradiation of the surface of a sample by an electron beam converged to a fine diameter at an angle of incidence almost parallel to the surface thereof. CONSTITUTION:The surface of a sample 3 is irradiated with an electron beam reduced to a fine diameter to observe a diffraction pattern. At this point, a relationship between intensities of the electron beam at a plurality of points on the diffraction pattern does not change while the electron beam 4 incident into the sample scans a monocrystalline area of the surface of the sample 3 but changes depending on a difference in a direction of crystal face of an adjacent crystal when the scanning is shifted thereto. This change in the relationship is extracted by an arithmetic processing of detection outputs at the points during one scanning by the electron beam. This allows clear recognition of a structure of a fine area of the surface of the sample 3 and a secular change in the structure and combined with functions of energization, heating and other treatments for the sample, a hourly change in the structure can be observed by tracking under various conditions of a fine area of the sample.

4. 发明专利

JPH10233751A CODE DIVISION MULTIPLEX COMMUNICATION EQUIPMENT 失效
公开(公告)号：JPH10233751A
公开(公告)日：1998-09-02
申请号：JP3249397
申请日：1997-02-17
申请人： TSUBOCHI KAZUO
发明人： TSUBOUCHI KAZUO , EKI KAZUYA , FUJITA YASUHITO
IPC分类号： H04J13/00 , H04B1/709
摘要： PROBLEM TO BE SOLVED: To provide the code division multiplex communication equipment with less power consumption that has programmability of spread codes. SOLUTION: A correlation device 5 employs the switched current system and detects the correlation by current summation. A voltage/current converter V/IC 101 converts a voltage of a signal Vin received from a terminal T1 into a current Iin. CDF/F1021 -102n (n is a natural number) being current flip-flop circuits sample and latch the current Iin converted by the V/IC 101 in time series based on clock signals W1, W2. The current flip-flop circuits 1021-102n have switch transistors(TRs) that interrupt a drive current other than that at a sampling to reduce the current consumption. A switch matrix 103 changes a path through which an output current of the CDF/F1021 -102n flows based on a pseudo random noise PN code. A current adder 105 adds output currents of a switch matrix 103 to take correlation between the input signal and the PN code.

5. 发明专利

JPH10233750A CODE DIVISION MULTIPLEX COMMUNICATION EQUIPMENT 失效
公开(公告)号：JPH10233750A
公开(公告)日：1998-09-02
申请号：JP3249297
申请日：1997-02-17
申请人： TSUBOCHI KAZUO
发明人： TSUBOUCHI KAZUO , EKI KAZUYA , FUJITA YASUHITO
IPC分类号： H04J13/00 , H04B1/709
摘要： PROBLEM TO BE SOLVED: To provide the code division multiplex communication equipment that has provision for a long spread code, is operated for RF and IF bands and easily changes a spread code with less power consumption. SOLUTION: A correlation device 5 employs the switched current system and detects the correlation by current summation. A voltage/current converter V/IC 101 converts a voltage of a signal Vin received from a terminal T1 into a current Iin. CDF/F1021 -102n (n is a natural number) are current flip-flop circuits and sample and latch the current Iin converted by the V/IC 101 in time series based on clock signals W1, W2. A switch matrix 103 changes a path through which an output current of the CDF/F1021 -102n flows based on a pseudo random noise PN code. A current adder 105 adds output currents of a switch matrix 103 to take correlation between the input signal and the PN code.

6. 发明专利

JP2764599B2 失效
公开(公告)号：JP2764599B2
公开(公告)日：1998-06-11
申请号：JP3714389
申请日：1989-02-16
申请人： MIKOSHIBA NOBUO , OOMI TADAHIRO , TSUBOCHI KAZUO , EKI KAZUYA
发明人： MIKOSHIBA NOBUO , OOMI TADAHIRO , TSUBOCHI KAZUO , EKI KAZUYA
IPC分类号： G01N23/225 , G01N23/20 , G01N23/201 , H01J37/295

7. 发明专利

JPH0465385A FORMATION OF METALLIC THIN FILM 失效
公开(公告)号：JPH0465385A
公开(公告)日：1992-03-02
申请号：JP17755490
申请日：1990-07-06
申请人： TSUBOCHI KAZUO
发明人： TSUBOUCHI KAZUO , EKI KAZUYA
IPC分类号： C30B1/02 , C30B29/02 , C30B29/52 , H01L21/3205 , H01L23/52
摘要： PURPOSE:To enhance resistance to migration characteristics by forming a non- single-crystal metallic film made of Al or Al alloy in contact with single-crystal metal of the same kind of metal and heat-treating the metallic film to make it single crystal. CONSTITUTION:An insulated film 2 such as SiO2 formed on a semiconductor base body 1 like single crystal Si by a sputtering method. Then an aperture part is formed in the insulated film 2 by reactive ionic etching, etc., and the surface of the base body 1 is exposed. Single crystal Al3 is selectively formed in the aperture part by regulating the surface temp. of the base body at the decomposition temp. of a raw material to 450 deg.C by an Al-CVD method wherein both gaseous alkylaluminum hydride such as dimethylaluminum hydride and gaseous H2 are utilized in this aperture part. Furthermore non-single crystal Al4 is formed on both single crystal Al3 and the insulated film 2 by a CVD method. Thereafter this non-single crystal Al4 is heat-treated by resistance heating, laser beam heating and electron beam heating, etc., at >=550 deg.C in the atmosphere of an individual such as H2 and Ar or of a gaseous mixture and made to single crystal. An insulated film 5 is formed thereon by a CVD method, etc. This method is applicable even to Al alloy in addition to Al.

8. 发明专利

JPH02216040A REFLECTED ELECTRON BEAM DIFFRACTION APPARATUS 失效
公开(公告)号：JPH02216040A
公开(公告)日：1990-08-28
申请号：JP3714189
申请日：1989-02-16
申请人： MIKOSHIBA NOBUO , OMI TADAHIRO , TSUBOCHI KAZUO , EKI KAZUYA
发明人： MIKOSHIBA NOBUO , OMI TADAHIRO , TSUBOUCHI KAZUO , EKI KAZUYA
IPC分类号： G01N23/225 , G01N23/207
摘要： PURPOSE:To measure the distribution of individual crystals by arranging a reflected electron beam diffraction electron gun, a photomultiplier and an arithmetic circuit to permits the determination of crystal bearings in faces thereof parallel and vertical to the surface of a sample. CONSTITUTION:Diffraction pattern is formed on a fluorescent screen 6 by a diffraction electron beam 5 resulting from an electron beam 4 emitted from a reflected electron beam diffraction electron gun 1. A signal from a diffraction spot is introduced to photomultipliers 10-12 through optical fibers 7-9 to be amplified and computed with an arithmetic circuit 13. Then, with the circuit 13, intensities of the diffraction spots undergo a multiplication processing by an optional constant and a addition/subtraction processing between the intensities of the diffraction spots subjected to the multiplication processing. A signal 14 as the results of the arithmetic processing is inputted into a CRT 15 as brightness signal. Then, a diffraction intensity image from the surface of a sample is displayed on the CRT 15 by a scan signal synchronizing a scan signal 16 of the electron beam from the electron gun 1. Thus, the fibers 7-9 are disposed under vacuum and a allowed to select optional diffraction spots mechanically.

9. 发明专利

JPH05168802A LIQUID MATERIAL VAPORIZER AND THIN FILM FORMING DEVICE 失效
公开(公告)号：JPH05168802A
公开(公告)日：1993-07-02
申请号：JP34486991
申请日：1991-12-26
申请人： TSUBOCHI KAZUO
发明人： TSUBOUCHI KAZUO , EKI KAZUYA
IPC分类号： B01D1/14 , B01D1/16 , B01D1/20 , B01D3/06 , B01J7/02 , C23C16/44 , C23C16/448 , C23C16/455 , C30B25/14 , H01L21/285
摘要： PURPOSE:To efficiently vaporize a material low in saturated vapor pressure at room temp. by arranging a heated plate pierced with a small hole in front of a thin tube with the tip opened to inject a liq. material in the form of droplets and evacuating a space on the opposite side of the thin tube. CONSTITUTION:A liq. material 2 is transported, a plate 30 is provided with a small hole 40 opened at the tip of a nozzle, and the plate 30 is heated by a heater. A gaseous mixture 31 is introduced into the small hole 40 from around the nozzle. A pressure gradient is generated in the small hole 40 from a space A to a space B as the reaction chamber, and the space B is evacuated by an evacuating device. A droplet 50 is injected from the nozzle into such space A, small hole 40 and space B, vaporized in the small hole 40 and introduced into the space B. At this time, although the droplet 50 is not vaporized when the small hole 40 is kept at room temp., the plate 30 is heated and the heated gaseous mixture 31 is introduced, and hence the droplet is vaporized into the small hole 40.

10. 发明专利

JPH0513598A METHOD FOR FORMING DEPOSITION FILM 失效
公开(公告)号：JPH0513598A
公开(公告)日：1993-01-22
申请号：JP16588391
申请日：1991-07-05
申请人： TSUBOCHI KAZUO
发明人： TSUBOUCHI KAZUO , EKI KAZUYA
IPC分类号： H01L21/285 , C23C16/20 , H01L21/28 , H01L21/3205 , H01L21/768 , H01L23/52
摘要： PURPOSE:To form a conductive deposition film which becomes a good wiring having an excellent step coverage. CONSTITUTION:A chemical surface treatment is given to a substrate having an electron donative surface 90 and a non-electron donative surface 91 in order to terminate the electron donative surface with hydrogen atom. Subsequently, a process to heat the substrate arranged in a space for the deposition film formation, the first deposition process to deposit a film 92 mainly made of aluminum on the electron donative surface by introducing an alkyl aluminum hydride gas and a hydrogen gas into the deposition film formation space, and the second deposition process to deposit a film mainly made of aluminum over the entire area of the deposited film mainly made of aluminum and the non- electron donative surface are provided.

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