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1. 发明专利

JP2764599B2 失效
公开(公告)号：JP2764599B2
公开(公告)日：1998-06-11
申请号：JP3714389
申请日：1989-02-16
申请人： MIKOSHIBA NOBUO , OOMI TADAHIRO , TSUBOCHI KAZUO , EKI KAZUYA
发明人： MIKOSHIBA NOBUO , OOMI TADAHIRO , TSUBOCHI KAZUO , EKI KAZUYA
IPC分类号： G01N23/225 , G01N23/20 , G01N23/201 , H01J37/295

2. 发明专利

JP2764600B2 失效
公开(公告)号：JP2764600B2
公开(公告)日：1998-06-11
申请号：JP3714489
申请日：1989-02-16
申请人： MIKOSHIBA NOBUO , OOMI TADAHIRO , TSUBOCHI KAZUO , EKI KAZUYA
发明人： MIKOSHIBA NOBUO , OOMI TADAHIRO , TSUBOCHI KAZUO , EKI KAZUYA
IPC分类号： G01N23/225 , G01N23/20 , G01N23/201

3. 发明专利

JPH02216040A REFLECTED ELECTRON BEAM DIFFRACTION APPARATUS 失效
公开(公告)号：JPH02216040A
公开(公告)日：1990-08-28
申请号：JP3714189
申请日：1989-02-16
申请人： MIKOSHIBA NOBUO , OMI TADAHIRO , TSUBOCHI KAZUO , EKI KAZUYA
发明人： MIKOSHIBA NOBUO , OMI TADAHIRO , TSUBOUCHI KAZUO , EKI KAZUYA
IPC分类号： G01N23/225 , G01N23/207
摘要： PURPOSE:To measure the distribution of individual crystals by arranging a reflected electron beam diffraction electron gun, a photomultiplier and an arithmetic circuit to permits the determination of crystal bearings in faces thereof parallel and vertical to the surface of a sample. CONSTITUTION:Diffraction pattern is formed on a fluorescent screen 6 by a diffraction electron beam 5 resulting from an electron beam 4 emitted from a reflected electron beam diffraction electron gun 1. A signal from a diffraction spot is introduced to photomultipliers 10-12 through optical fibers 7-9 to be amplified and computed with an arithmetic circuit 13. Then, with the circuit 13, intensities of the diffraction spots undergo a multiplication processing by an optional constant and a addition/subtraction processing between the intensities of the diffraction spots subjected to the multiplication processing. A signal 14 as the results of the arithmetic processing is inputted into a CRT 15 as brightness signal. Then, a diffraction intensity image from the surface of a sample is displayed on the CRT 15 by a scan signal synchronizing a scan signal 16 of the electron beam from the electron gun 1. Thus, the fibers 7-9 are disposed under vacuum and a allowed to select optional diffraction spots mechanically.

4. 发明专利

JPH02216041A REFLECTED ELECTRON BEAM DIFFRACTION APPARATUS 失效
公开(公告)号：JPH02216041A
公开(公告)日：1990-08-28
申请号：JP3714389
申请日：1989-02-16
申请人： MIKOSHIBA NOBUO , OMI TADAHIRO , TSUBOCHI KAZUO , EKI KAZUYA
发明人： MIKOSHIBA NOBUO , OMI TADAHIRO , TSUBOUCHI KAZUO , EKI KAZUYA
IPC分类号： G01N23/225 , G01N23/20 , G01N23/201 , H01J37/295
摘要： PURPOSE:To observe a midway development of a variation in a grain boundary of a sample by performing an arithmetic processing of a diffraction pattern with the irradiation of the surface of a sample by an electron beam converged to a fine diameter at an angle of incidence almost parallel to the surface thereof. CONSTITUTION:The surface of a sample 3 is irradiated with an electron beam reduced to a fine diameter to observe a diffraction pattern. At this point, a relationship between intensities of the electron beam at a plurality of points on the diffraction pattern does not change while the electron beam 4 incident into the sample scans a monocrystalline area of the surface of the sample 3 but changes depending on a difference in a direction of crystal face of an adjacent crystal when the scanning is shifted thereto. This change in the relationship is extracted by an arithmetic processing of detection outputs at the points during one scanning by the electron beam. This allows clear recognition of a structure of a fine area of the surface of the sample 3 and a secular change in the structure and combined with functions of energization, heating and other treatments for the sample, a hourly change in the structure can be observed by tracking under various conditions of a fine area of the sample.

5. 发明专利

JPH02216042A REFLECTED ELECTRON BEAM DIFFRACTION APPARATUS 失效
公开(公告)号：JPH02216042A
公开(公告)日：1990-08-28
申请号：JP3714489
申请日：1989-02-16
申请人： MIKOSHIBA NOBUO , OMI TADAHIRO , TSUBOCHI KAZUO , EKI KAZUYA
发明人： MIKOSHIBA NOBUO , OMI TADAHIRO , TSUBOUCHI KAZUO , EKI KAZUYA
IPC分类号： G01N23/225 , G01N23/20 , G01N23/201
摘要： PURPOSE:To obtain information on a bearing and size of a crystal of a sample while enabling an analysis with high depth-wise resolutions by performing an arithmetic processing of a diffraction pattern as produced when the surface of a sample is irradiated with an electron beam converged to a fine diameter at an angle of incidence almost parallel with the surface thereof. CONSTITUTION:The surface of a sample 3 is irradiated with an electron beam converged to a fine diameter to observe a diffraction pattern. At this point, a relationship between intensities of electron beams at a plurality of points on the diffraction pattern does not change while a monocrystalline area in the surface of the sample 3 is scanned by an electron beam 4 incident into the sample 3 but changes depending on a difference in a direction or the like of a crystal face of an adjacent crystal when the scanning is shifted thereto. A change in this relationship is extracted by a arithmetic processing of a detection output at the points to be displayed two-dimensionally. Thus, only 10-20Angstrom is enough for the penetration depth of the electron beam 4 into the surface of the sample 3 to allow clear recognition of a construction of a fine area on the surface of the sample 3 and this is utilized to be combined with an ion etching of the surface of the sample 3 thereby enabling an structural analysis of the sample 3 with depth-resolutions at 10-20Angstrom .

6. 发明专利

JPH0348460A INTEGRATED CIRCUIT 失效
公开(公告)号：JPH0348460A
公开(公告)日：1991-03-01
申请号：JP10503890
申请日：1990-04-20
申请人： MIKOSHIBA NOBUO , TSUBOCHI KAZUO , EKI KAZUYA
发明人： MIKOSHIBA NOBUO , TSUBOUCHI KAZUO , EKI KAZUYA
IPC分类号： H01L29/78 , H01L21/8236 , H01L27/088 , H01L29/49
摘要： PURPOSE:To obtain a high-speed and high-density integrated circuit with a fewer MOSFETs, which operates both at room temperature and at the temperature of liquid nitrogen and which can be manufactured in a fewer processes, by using gates with a specific work function without doping the channel section of a semiconductor substrate immediately below a gate insulating film with an impurity which is different in conductivity type from the substrate. CONSTITUTION:The channel section 18' of an Si substrate 7 immediately below the insulating film 16 of a gate electrode 17 is not doped with an impurity which is different in conductivity type from the substrate. The gate electrode 17 is formed of a material having a work function smaller than that of the p type Si substrate 7. (When the conductivity of the substrate 7 is n-type, a material having a work function lager than that of an n-type substrate is used for the gate electrode.) The channel length 24 of the channel section 18 is constituted of very fine MOSFETs of 0.5mum in width by using such nitrides as LaB6, TiN, ZrN, TaN, VN, etc., and such carbides as ZrC, TiC, TaC, HfC, etc., as low-work function gate metals.

7. 发明专利

JPH02216748A SAMPLE SURFACE UNEVENNESS OBSERVATION METHOD BY REFLECTION ELECTRON BEAM DIFFRACTION 失效
公开(公告)号：JPH02216748A
公开(公告)日：1990-08-29
申请号：JP3714289
申请日：1989-02-16
申请人： MIKOSHIBA NOBUO , OMI TADAHIRO , TSUBOCHI KAZUO , EKI KAZUYA
发明人： MIKOSHIBA NOBUO , OMI TADAHIRO , TSUBOUCHI KAZUO , EKI KAZUYA
IPC分类号： G01B15/00 , G01B15/08 , G01N23/225 , H01J37/22 , H01J37/29 , H01J37/295
摘要： PURPOSE:To detect the unevenness on the surface of a sample by the atomic layer level, by scanning the designated area of the sample surface with the electron beams, detecting the intensity of the diffraction electron beams at a time at plural points in which the intensity is varied inversely at the atomic layer steps existing at the opposite surface of a diffraction pattern, and carrying out an operation between the intensities of plural diffraction electron beams. CONSTITUTION:The diameter of the incident electron beam 4 generated from an electron gun 1 for diffracting the reflection electron beam of a reflection high speed electron beam diffraction device is focused in order to observe its minute area, and the surface of a sample 3 loaded in a vacuum chamber 28 is scanned. The electron beam 4 from the electron gun 1 is injected to the surface of the sample 3 at the incident angle theta, and diffraction electron beams 5 depending on the crystal orientation and the plainness of the atomic layer level of the surface are generated. The electron beams 5 are injected to a fluorescent plate 6 for reflection electron beam diffraction spot observation. The output of the fluorescent plate 6 is added to an operation circuit 13 through photo-fibers 7-9, an operation is applied to the intensities between the diffraction electron beams detected simultanously, and the unevenness of the sample surface is detected by the atomic layer level.

8. 发明专利

JPS63307717A ORGANIC METAL FEEDER 失效
公开(公告)号：JPS63307717A
公开(公告)日：1988-12-15
申请号：JP14305087
申请日：1987-06-10
申请人： MIKOSHIBA NOBUO
发明人： MIKOSHIBA NOBUO , TSUBOUCHI KAZUO , EKI KAZUYA , SUZUKI NOBUMASA
IPC分类号： F17C1/00 , H01L21/205
摘要： PURPOSE:To make it needless to fill an unnecessarily large quantity of organic metal in a cylinder containing organic metal for reducing any impurity in said cylinder to enhance the purity of a deposited film to be formed by a method wherein the cylinder containing organic metal is provided with a leading-in means of the organic metal and a removing means of the same. CONSTITUTION:An organic metal 3 is previously contained in a spare cylinder 8 while a valve 5 is opened to keep a thermostatic chamber 7 at a constant temperature for securing the pertinent saturated vapor pressure of the organic metal 3. When a main cylinder 4 is filled with the organic metal 3 to be used, the temperature in the thermostatic chamber 7 is restored to the room temperature and then the valve 5 is closed. In order to use the organic metal 3, carrier gas such as H2, Ar etc., is led in the organic metal 3 contained in the cylinder 4 passing through another valve 1 in the arrow direction and then the organic metal 3 fit for the saturated vapor pressure together with the carrier gas is carried to a substrate through the other valve 2. After using, the other valve 6 is opened to fill any waste liquid of the organic metal 3 in a waste liquid cylinder 9. Through these procedures, an unnecesarily large quantity of organic metal 3 need not be filled in the main cylinder 4 containing the organic metal 3.

9. 发明专利

JP2635021B2 失效
公开(公告)号：JP2635021B2
公开(公告)日：1997-07-30
申请号：JP21114485
申请日：1985-09-26
申请人： MIKOSHIBA NOBUO
发明人： MIKOSHIBA NOBUO , OOMI TADAHIRO , TSUBOCHI KAZUO , EKI KAZUYA , SUZUKI NOBUMASA
IPC分类号： H01L21/205 , C23C16/452 , C23C16/48 , C23C16/50 , H01L21/263 , H01L21/31

10. 发明专利

JPH0553055B2 失效
公开(公告)号：JPH0553055B2
公开(公告)日：1993-08-09
申请号：JP20254685
申请日：1985-09-14
申请人： MIKOSHIBA NOBUO
发明人： MIKOSHIBA NOBUO , TSUBOCHI KAZUO , EKI KAZUYA , SATO KAZUO , SUZUKI NOBUMASA
IPC分类号： H01L21/205 , H01L21/31

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