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1. 发明专利

JPH02216040A REFLECTED ELECTRON BEAM DIFFRACTION APPARATUS 失效
公开(公告)号：JPH02216040A
公开(公告)日：1990-08-28
申请号：JP3714189
申请日：1989-02-16
申请人： MIKOSHIBA NOBUO , OMI TADAHIRO , TSUBOCHI KAZUO , EKI KAZUYA
发明人： MIKOSHIBA NOBUO , OMI TADAHIRO , TSUBOUCHI KAZUO , EKI KAZUYA
IPC分类号： G01N23/225 , G01N23/207
摘要： PURPOSE:To measure the distribution of individual crystals by arranging a reflected electron beam diffraction electron gun, a photomultiplier and an arithmetic circuit to permits the determination of crystal bearings in faces thereof parallel and vertical to the surface of a sample. CONSTITUTION:Diffraction pattern is formed on a fluorescent screen 6 by a diffraction electron beam 5 resulting from an electron beam 4 emitted from a reflected electron beam diffraction electron gun 1. A signal from a diffraction spot is introduced to photomultipliers 10-12 through optical fibers 7-9 to be amplified and computed with an arithmetic circuit 13. Then, with the circuit 13, intensities of the diffraction spots undergo a multiplication processing by an optional constant and a addition/subtraction processing between the intensities of the diffraction spots subjected to the multiplication processing. A signal 14 as the results of the arithmetic processing is inputted into a CRT 15 as brightness signal. Then, a diffraction intensity image from the surface of a sample is displayed on the CRT 15 by a scan signal synchronizing a scan signal 16 of the electron beam from the electron gun 1. Thus, the fibers 7-9 are disposed under vacuum and a allowed to select optional diffraction spots mechanically.

2. 发明专利

JPH02216042A REFLECTED ELECTRON BEAM DIFFRACTION APPARATUS 失效
公开(公告)号：JPH02216042A
公开(公告)日：1990-08-28
申请号：JP3714489
申请日：1989-02-16
申请人： MIKOSHIBA NOBUO , OMI TADAHIRO , TSUBOCHI KAZUO , EKI KAZUYA
发明人： MIKOSHIBA NOBUO , OMI TADAHIRO , TSUBOUCHI KAZUO , EKI KAZUYA
IPC分类号： G01N23/225 , G01N23/20 , G01N23/201
摘要： PURPOSE:To obtain information on a bearing and size of a crystal of a sample while enabling an analysis with high depth-wise resolutions by performing an arithmetic processing of a diffraction pattern as produced when the surface of a sample is irradiated with an electron beam converged to a fine diameter at an angle of incidence almost parallel with the surface thereof. CONSTITUTION:The surface of a sample 3 is irradiated with an electron beam converged to a fine diameter to observe a diffraction pattern. At this point, a relationship between intensities of electron beams at a plurality of points on the diffraction pattern does not change while a monocrystalline area in the surface of the sample 3 is scanned by an electron beam 4 incident into the sample 3 but changes depending on a difference in a direction or the like of a crystal face of an adjacent crystal when the scanning is shifted thereto. A change in this relationship is extracted by a arithmetic processing of a detection output at the points to be displayed two-dimensionally. Thus, only 10-20Angstrom is enough for the penetration depth of the electron beam 4 into the surface of the sample 3 to allow clear recognition of a construction of a fine area on the surface of the sample 3 and this is utilized to be combined with an ion etching of the surface of the sample 3 thereby enabling an structural analysis of the sample 3 with depth-resolutions at 10-20Angstrom .

3. 发明专利

JPH02216041A REFLECTED ELECTRON BEAM DIFFRACTION APPARATUS 失效
公开(公告)号：JPH02216041A
公开(公告)日：1990-08-28
申请号：JP3714389
申请日：1989-02-16
申请人： MIKOSHIBA NOBUO , OMI TADAHIRO , TSUBOCHI KAZUO , EKI KAZUYA
发明人： MIKOSHIBA NOBUO , OMI TADAHIRO , TSUBOUCHI KAZUO , EKI KAZUYA
IPC分类号： G01N23/225 , G01N23/20 , G01N23/201 , H01J37/295
摘要： PURPOSE:To observe a midway development of a variation in a grain boundary of a sample by performing an arithmetic processing of a diffraction pattern with the irradiation of the surface of a sample by an electron beam converged to a fine diameter at an angle of incidence almost parallel to the surface thereof. CONSTITUTION:The surface of a sample 3 is irradiated with an electron beam reduced to a fine diameter to observe a diffraction pattern. At this point, a relationship between intensities of the electron beam at a plurality of points on the diffraction pattern does not change while the electron beam 4 incident into the sample scans a monocrystalline area of the surface of the sample 3 but changes depending on a difference in a direction of crystal face of an adjacent crystal when the scanning is shifted thereto. This change in the relationship is extracted by an arithmetic processing of detection outputs at the points during one scanning by the electron beam. This allows clear recognition of a structure of a fine area of the surface of the sample 3 and a secular change in the structure and combined with functions of energization, heating and other treatments for the sample, a hourly change in the structure can be observed by tracking under various conditions of a fine area of the sample.

4. 发明专利

JPH02216748A SAMPLE SURFACE UNEVENNESS OBSERVATION METHOD BY REFLECTION ELECTRON BEAM DIFFRACTION 失效
公开(公告)号：JPH02216748A
公开(公告)日：1990-08-29
申请号：JP3714289
申请日：1989-02-16
申请人： MIKOSHIBA NOBUO , OMI TADAHIRO , TSUBOCHI KAZUO , EKI KAZUYA
发明人： MIKOSHIBA NOBUO , OMI TADAHIRO , TSUBOUCHI KAZUO , EKI KAZUYA
IPC分类号： G01B15/00 , G01B15/08 , G01N23/225 , H01J37/22 , H01J37/29 , H01J37/295
摘要： PURPOSE:To detect the unevenness on the surface of a sample by the atomic layer level, by scanning the designated area of the sample surface with the electron beams, detecting the intensity of the diffraction electron beams at a time at plural points in which the intensity is varied inversely at the atomic layer steps existing at the opposite surface of a diffraction pattern, and carrying out an operation between the intensities of plural diffraction electron beams. CONSTITUTION:The diameter of the incident electron beam 4 generated from an electron gun 1 for diffracting the reflection electron beam of a reflection high speed electron beam diffraction device is focused in order to observe its minute area, and the surface of a sample 3 loaded in a vacuum chamber 28 is scanned. The electron beam 4 from the electron gun 1 is injected to the surface of the sample 3 at the incident angle theta, and diffraction electron beams 5 depending on the crystal orientation and the plainness of the atomic layer level of the surface are generated. The electron beams 5 are injected to a fluorescent plate 6 for reflection electron beam diffraction spot observation. The output of the fluorescent plate 6 is added to an operation circuit 13 through photo-fibers 7-9, an operation is applied to the intensities between the diffraction electron beams detected simultanously, and the unevenness of the sample surface is detected by the atomic layer level.

5. 发明专利

JPH03204927A DRY-ETCHING PROCESS 失效
公开(公告)号：JPH03204927A
公开(公告)日：1991-09-06
申请号：JP34175089
申请日：1989-12-31
申请人： OMI TADAHIRO , MIKOSHIBA NOBUO , SEIKO INSTR INC
发明人： OMI TADAHIRO , MIKOSHIBA NOBUO , MUROTA JUNICHI , MATSUURA TAKASHI , UETAKE HIROAKI , FUKUDA KOICHI
IPC分类号： H01L21/302 , H01L21/3065 , H01L29/78
摘要： PURPOSE:To do high anisotropic etching with high selecting at high anisotropy but also a sufficient rate for practical use by a method wherein a first gas containing a halogen gas and nitrogen gas is used for a first plasma etching and a second gas of a pure halogen gas or of a halogen-containing gas is used for a second plasma etching. CONSTITUTION:A protective film against sidewall is formed by a plasma of a gas containing a halogen gas and nitrogen gas to avoid the reaction of radicals of halogen atoms while the etching process of the bottom surface is accelerated by ion assist effect for enabling the surface to take anisotropical shape. Furthermore, the selectivity of masks or underneath oxide film can be enhanced by adding a bit of O2 gas. On the other hand, the surface of Si can be nitrified or oxidized to be insulated by adding N2 and O2 gas. Accordingly, in order to form a contact layer after etching process, the addition of N2 and O2 is stopped immediately before finishing the etching process while the etching process is performed using the plasma of a gas of a pure halogen gas or halogen-containing gas so as to improve the processing quality.

6. 发明专利

JPS6290924A METHOD AND APPARATUS FOR FORMING DEPOSITED FILM 失效
公开(公告)号：JPS6290924A
公开(公告)日：1987-04-25
申请号：JP21114485
申请日：1985-09-26
申请人： MIKOSHIBA NOBUO
发明人： MIKOSHIBA NOBUO , OMI TADAHIRO , TSUBOUCHI KAZUO , EKI KAZUYA , SUZUKI NOBUMASA
IPC分类号： H01L21/205 , C23C16/452 , C23C16/48 , C23C16/50 , H01L21/263 , H01L21/31
摘要： PURPOSE:To form a dense deposited film of high quality by supplying in advance vapor-pahse compound as an exciting seed to a substrate surface and emitting a light to the surface. CONSTITUTION:After a substrate temperature becomes a predetermined value, a plasma is generated near discharge electrodes 6 in a reaction vessel 8. Then, a predetermined light is emitted from a light illumination system 1 to a substrate surface. Then, raw gas containing metal alkyl compound of the prescribed partial pressure in diluted gas is supplied into the vessel 8. Exciting speed generated in a plasma generating range near the electrodes 6 arrives at the surface to be reacted with photon energy of the light emitted to the surface to form a desired deposited film. Thus, the reaction of the seed of the compound and the surface reaction on the substrate surface are independently achieved to prevent decomposed products from generating due to the vapor-phase reaction and from being deposited on the substrate.

7. 发明专利

JPH04324934A SEMICONDUCTOR CIRCUIT DEVICE AND WIRING THEREOF 失效
公开(公告)号：JPH04324934A
公开(公告)日：1992-11-13
申请号：JP9555891
申请日：1991-04-25
申请人： TSUBOCHI KAZUO
发明人： TSUBOUCHI KAZUO , EKI KAZUYA , HIURA YOHEI , OMI TADAHIRO
IPC分类号： H01L21/3205 , H01L23/52 , H01L23/532
摘要： PURPOSE:To manufacture the wiring making excellent migration resistance giving high yield as for the title wiring for semiconductor circuit device. CONSTITUTION:Within the title wiring comprising crystalline material to be connected to a semiconductor element, the crystal axial direction of the nearest atoms arranged in the single crystals 30, 31, 32, 33 comprising the crystalline material and the direction 40 of the current fed to the wiring are intersected with each other within the angle range not exceeding 22.5 deg..

8. 发明专利

JP2003224079A HEAT TREATING METHOD, HEAT TREATING DEVICE AND MANUFACTURING METHOD FOR SILICON EPITAXIAL WAFER 审中-公开
公开(公告)号：JP2003224079A
公开(公告)日：2003-08-08
申请号：JP2002023684
申请日：2002-01-31
申请人： SHINETSU HANDOTAI KK , OMI TADAHIRO
发明人： KANETANI KOICHI , NISHIZAWA TAKESHI , OMI TADAHIRO , SUGAWA SHIGETOSHI
IPC分类号： H01L21/677 , H01L21/205 , H01L21/324 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To provide a heat treating method capable of reducing the amount of brought-in moisture to a heat treating chamber (reaction chamber), a heat treating device and a manufacturing method for a silicon epitaxial wafer. SOLUTION: The heat treating method is for executing a heat treatment to a silicon single crystal substrate W by using a heat treating device 10 provided with a load lock chamber 20, a heat treating chamber 30, and a transfer chamber 40 for transferring the silicon single crystal substrate W between the load lock chamber 20 and the heat treating chamber 30. After performing work for enabling the atmosphere outside the heat treating device 10 to flow into the transfer chamber 40, a transfer chamber inner wall heating process is executed for heating the inner wall of the transfer chamber 40 to a temperature lower than the temperature of the heat treatment performed in the heat treating chamber 40. Thereafter, the silicon single crystal substrate W inside the load lock chamber 20 is carried through the transfer chamber 40 to the heat treating chamber 30, and the heat treatment is performed in the heat treating chamber 30. COPYRIGHT: (C)2003,JPO

9. 发明专利

JP2003214671A CLEAN ROOM 审中-公开
公开(公告)号：JP2003214671A
公开(公告)日：2003-07-30
申请号：JP2002014906
申请日：2002-01-24
申请人： OMI TADAHIRO , KUMAGAI GUMI CO LTD
发明人： OMI TADAHIRO , YAMADA TAKAHISA , SUMIHAMA HIROSHI , NAKAZAWA KATSUNORI , SUZUKI HIROKAZU , MURAOKA KENJI , MIURA MASAYASU
IPC分类号： E04F13/07 , E04F13/00 , E04F13/08 , E04F15/18 , E04H5/02 , F24F7/06
摘要： PROBLEM TO BE SOLVED: To solve a problem of a conventional clean room, wherein anti-static measures for walls and floors are not sufficiently made, so they are electrically charged, dusts accumulate due to static charge, a static electricity spark causes organic reaction, and then gas generate, causing problems in manufacturing semiconductors. SOLUTION: This clean room has a conductive sheet floor finishing material (conductive vinyl chloride sheet 4) extending to a wall substrate surface (2), and has a conductive sheet wall finishing material (conductive cloth 5) through which electricity is conducted to the sheet floor finishing material extending to the wall substrate surface. COPYRIGHT: (C)2003,JPO

10. 发明专利

JP2003213952A STRUT BASE WRAPPER FOR CLEAN ROOM 审中-公开
公开(公告)号：JP2003213952A
公开(公告)日：2003-07-30
申请号：JP2002014925
申请日：2002-01-24
申请人： OMI TADAHIRO , KUMAGAI GUMI CO LTD
发明人： OMI TADAHIRO , YAMADA TAKAHISA , SUMIHAMA HIROSHI , NAKAZAWA KATSUNORI , SUZUKI HIROKAZU , MURAOKA KENJI , MIURA MASAYASU
IPC分类号： E04B1/24 , E04H5/02
摘要： PROBLEM TO BE SOLVED: To solve a problem of a conventional clean room base wrapper, the problem being caused by non-conduction thereof to a steel strut and difficult grounding of current charged on a surface of the steel strut, resulting in stagnation of electric charge on the surface of the steel strut and adverse effect on semiconductor production, etc. SOLUTION: There is provided a new strut base wrapper 1 for the clean room, which consists of a base wrapping frame 2, and base wrapping concrete 5. The base wrapping frame 2 is formed of an electric conductor, and encloses the periphery of a base of the strut 42 in a manner being spaced away from the strut so as to form a space in which concrete is placed. The base wrapping concrete 5 is placed in the space between the base wrapping frame 2 and the strut 42. An inner side of the base wrapping frame 2 is electrically connected to the strut 42 via a conductive rod 4. Further, a surface of the strut, a floor surface, and an upper surface of the base wrapping concrete are subjected to conductive treatment, and the strut surface and the floor surface which have been subjected to the conductive treatment are brought into conduction with each other via the upper surface of the base wrapping concrete which has been subjected to the conductive treatment, and the conductive base wrapping frame. COPYRIGHT: (C)2003,JPO

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