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    • 1. 发明申请
    • VEHICLE EQUIPMENT MOUNTING STRUCTURE
    • 车辆设备安装结构
    • WO2012104721A1
    • 2012-08-09
    • PCT/IB2012/000185
    • 2012-02-02
    • TOYOTA JIDOSHA KABUSHIKI KAISHAAISIN AW CO., LTD.HOTTA, KojiYAMANAKA, KenshiHOTTA, Yutaka
    • HOTTA, KojiYAMANAKA, KenshiHOTTA, Yutaka
    • B60K1/04
    • B60L11/18B60K1/04B60K2001/0411B60R16/04
    • A vehicle equipment mounting structure that arranges a motor case (12), in which a rotary electric machine that drives a vehicle is housed, in an engine compartment (20), and that includes a PCU (13) that controls the rotary electric machine, and an auxiliary (14) battery that supplies electric power to the PCU. This structure includes a fixing portion (22) that fixes the PCU onto the motor case (12), and a connecting portion (23) that connects the auxiliary battery (14) to a side member (15) that absorbs an impact load by being crushed in a crushing direction. The connecting portion (23) has a displaceable member that is displaceable in the crushing direction. The auxiliary battery is arranged on a vehicle front side of the PCU such that the PCU and the auxiliary battery partially overlap in the crushing direction. The auxiliary battery is arranged so as to be able to move past the PCU in response to an impact load.
    • 一种车辆设备安装结构,其布置有容纳有驱动车辆的旋转电机的电动机壳体(12),位于发动机室(20)中,并且包括控制旋转电机的PCU(13) 以及向PCU供电的辅助电池(14)。 该结构包括将PCU固定在电动机壳体(12)上的固定部分(22)和将辅助电池(14)连接到吸收冲击负载的侧部件(15)的连接部分(23) 在破碎的方向粉碎。 连接部分(23)具有可在破碎方向上移动的位移构件。 辅助电池布置在PCU的车辆前侧,使得PCU和辅助电池在破碎方向上部分重叠。 辅助电池被布置成能够响应于冲击负载而移动经过PCU。
    • 3. 发明公开
    • VEHICULAR INSTRUMENT-MOUNTING STRUCTURE
    • 蒙特哥鲁姆FÜRINSTRUMENTE在FAHRZEUGEN
    • EP2636562A1
    • 2013-09-11
    • EP12747327.0
    • 2012-02-13
    • TOYOTA JIDOSHA KABUSHIKI KAISHAAisin AW Co., Ltd.
    • HOTTA, KojiYAMANAKA, KenshiHOTTA, Yutaka
    • B60R16/04
    • B62D21/155B60K1/00B60R16/04B60Y2200/92B60Y2306/01
    • The present invention comprises side members (15), which are vehicular skeleton members of a hybrid vehicle (10); a front cross member (18) for connecting the two side members (15); spring supports (16) connected to the side members (15); an auxiliary battery arranged further towards the vehicle front relative to a PCU (13) and attached to the front cross member (18) via a support platform (23) and a securing piece (22); a radiator (17) attached to the front cross member (18); a motor case (12) and an engine (11) connected to the vehicular skeleton member via an engine mount; an axle (25) extending from the motor case (12); and a PCU (13) connected to the motor case (12) via a guide plate (19) and a linkage bolt. Thus, there is provided a vehicular instrument-mounting structure capable of inhibiting collision of a power control device or other vehicle-mounted instrument with another member, and inhibiting damage caused to the power control device or other vehicle-mounted instrument during a vehicle collision.
    • 本发明包括作为混合动力车辆(10)的车辆骨架构件的侧构件(15)。 用于连接两个侧构件(15)的前横梁(18); 连接到侧构件(15)的弹簧支撑件(16); 辅助电池相对于PCU(13)进一步朝向车辆前方布置并且经由支撑平台(23)和固定件(22)附接到前横梁(18); 安装在前横梁(18)上的散热器(17); 电动机壳体(12)和经由发动机支架与车辆骨架构件连接的发动机(11); 从马达壳体(12)延伸的轴(25); 以及经由引导板(19)和连接螺栓连接到电动机壳体(12)的PCU(13)。 因此,提供了一种能够抑制动力控制装置或其他车载装置与另一构件的碰撞的车辆仪表安装结构,并且在车辆碰撞期间抑制对动力控制装置或其他车载装置的损坏。
    • 6. 发明申请
    • TRENCH GATE FIELD EFFECT DEVICES
    • TRENCH门式场效应器件
    • WO2005062385A1
    • 2005-07-07
    • PCT/JP2004/018432
    • 2004-12-03
    • TOYOTA JIDOSHA KABUSHIKI KAISHAHOTTA, KojiKAWAJI, SachikoSUGIYAMA, TakahideUSUI, Masanori
    • HOTTA, KojiKAWAJI, SachikoSUGIYAMA, TakahideUSUI, Masanori
    • H01L29/739
    • H01L29/7397H01L29/0619H01L29/0634H01L29/1095H01L29/7813
    • The present invention relates to a technique for reducing the on-voltage of the semiconductor device by increasing the concentration of minority carriers in the deep region (26) and the intermediate region (28). A semiconductor device according to the invention comprises an electrode, a top region (36) of a second conductivity type connected to the electrode, a deep region of the second conductivity type, and an intermediate region of a first conductivity type connected to the electrode. A portion of the intermediate region isolates the top region and the deep region. The semiconductor device further comprises a gate electrode (32) facing the portion of the intermediate region via an insulating layer. The portion facing the gate electrode isolates the top region and the deep region. The semiconductor device according to the invention further comprises a barrier region (40) that is formed within the intermediate region and/or the top region.
    • 本发明涉及通过增加深区域(26)和中间区域(28)中的少数载流子的浓度来降低半导体器件的导通电压的技术。 根据本发明的半导体器件包括电极,连接到电极的第二导电类型的顶部区域(36),第二导电类型的深区域和连接到电极的第一导电类型的中间区域。 中间区域的一部分隔离顶部区域和深部区域。 半导体器件还包括经由绝缘层面对中间区域的部分的栅电极(32)。 面对栅电极的部分隔离顶部区域和深部区域。 根据本发明的半导体器件还包括形成在中间区域和/或顶部区域内的阻挡区域(40)。