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1. 发明专利

JPH02212389A PULLING-UP DEVICE FOR SEMICONDUCTOR SINGLE CRYSTAL 失效
公开(公告)号：JPH02212389A
公开(公告)日：1990-08-23
申请号：JP3335189
申请日：1989-02-13
申请人： TOSHIBA CORP
发明人： YASUNAGA TOSHIO , FUJII YUKI
IPC分类号： C30B15/14 , H01L21/208
摘要： PURPOSE:To directly control the temp. of melt of a semiconductor and to simpli fy the constitution of the device by constituting this device of such a structure that a heating body is directly provided to the outer surface of a crucible for housing semiconductor material and melting it. CONSTITUTION:An unrotary table supporting shaft 12 is provided in an envelope 15 equipped with a heat insulating material in the inner surface. A crucible 10 is arranged on a table 13 provided on the top end of this supporting shaft 12. A shaft 14 for pulling-up single crystal is fitted with seed crystal 107 to the lower end and unrotated and vertically moved. This shaft 14 is arranged to the upper part of the crucible 10. High-m.p. metal is coated on the outer surface of the crucible 10 and a patterned heating body 11 is provided. For example, this heating body 11 consists of both a heating body part 21 of the outer circumferential side and a heating body part 31 of the bottom face. Pt and W, etc., are properly utilized as the high-m.p. metal and the heating body 11 can be formed by fitting a mask having a pattern shape to the circumferen tial side of the crucible and coating the high-m.p. metal by a vacuum depositing method and thereafter removing the mask. In this device, the need for a temp. equalizing wall and rotation of the shaft 14 are eliminated.

2. 发明专利

JPS61248343A ROTARY ANODE TYPE X-RAY TUBE 失效
公开(公告)号：JPS61248343A
公开(公告)日：1986-11-05
申请号：JP8962985
申请日：1985-04-25
申请人： TOSHIBA CORP
发明人： SASAKI TOMIYA , YASUNAGA TOSHIO
IPC分类号： H01J35/10
摘要： PURPOSE:To exercise the special character of a magnetic bearing fully, and enable to improve reliability and to acquire a long service life, by furnishing a temperature decreasing device for a rotor, so as to decrease the temperature of the rotor, where a magnetic ring to consist a magnetic bearing is arranged, below the Curie temperature of the magnetic ring material. CONSTITUTION:A target plate 3 is not connected directly to a rotor 4a but linked through a target fixing shaft 15 made of a metallic material with a low heat-conductivity and a high-temperature strength such as tungsten or molybdenum, for example, and moreover, some measure is prepared to provide a low heat-conductivity at the connection 17 between the target plate 3 and the target fixing shaft 15. The target plate 3 and the target fixing shaft 15 are connected directly. The target fixing shaft 15 and the rotor 4 don't contact at the whole surface but only at the peripheral portion, by making a concave 15a at the center of the fixing shaft 15, and screwed by bolts 16.

3. 发明专利

JPH0692780A APPARATUS FOR PRODUCTION OF SEMICONDUCTOR SINGLE CRYSTAL 失效
公开(公告)号：JPH0692780A
公开(公告)日：1994-04-05
申请号：JP24475692
申请日：1992-09-14
申请人： TOSHIBA CORP
发明人： YASUNAGA TOSHIO
IPC分类号： C30B15/14 , H01L21/208
摘要： PURPOSE:To provide the semiconductor single crystal having the low density of microdefects and high quality by constituting the lower side of a hermetic vessel as a single crystal production part and the upper side as a single crystal soaking and heat insulating part, thereby constituting the apparatus for production of the single crystal. CONSTITUTION:The single crystal production part 111 is constituted by a crucible 103 which houses and melts the raw material for the semiconductor single crystal, a heater 107 for melting the raw materials for the crystal enclosing the crucible 103 and a pulling up mechanism for pulling up a single crystal body 19 from a semiconductor melt 104 within the hermetic vessel 1. The upper part of the single crystal production part 111 within the hermetic vessel 1 is provided with the single crystal soaking and heat insulating part 11 having a holding heater 2 for soaking and holding to the pulled up and formed single crystalline body 19 in its longitudinal direction. The crystalline body after disconnection is subjected to a desired experience time in a 400 to 500 deg.C range and the crystalline body having the decreased microdefects is obtd.

4. 发明专利

JPH03274728A MANUFACTURE OF SEMICONDUCTOR WAFER 失效
公开(公告)号：JPH03274728A
公开(公告)日：1991-12-05
申请号：JP7327190
申请日：1990-03-26
申请人： TOSHIBA CORP
发明人： NISHIO JOSHI , FUJII TAKASHI , YOSHIDA HIROAKI , USUDA KOJI , YASUNAGA TOSHIO
IPC分类号： H01L21/304
摘要： PURPOSE:To unite a plurality of semiconductor substrates into a single unit through direct adhesion without heat treatment by immersing a plurality of semiconductor substrates subjected to mirror-finish polishing in liquid, fitting them together in liquid, taking them out of liquid, and drying them. CONSTITUTION:Two substrates, both surfaces of which have been subjected to mechanochemical polishing into mirror finish, are first immersed in acetone. That is, a substrate rest 3 is placed in a container 1 to be filled with acetone 2, in which a p-type ZnSe substrate 4 and an n-type ZnSe substrate 5 left to stand in air about a day after mirror polishing are immersed in an upright position on the substrate rest 3. And in the condition of no bubbles on the surfaces of both substrates, one substrate 4 is moved with wafer tweezers to the position of the other substrate 5. Subsequently, they are put into contact and fitted in such a manner that the orientation flats of both substrates 4 and 5 match. In this condition, the two substrates 4 and 5 are pulled out of acetone 2 and placed on filter paper on a level stand. They are left to stand in this condition for one day. After acetone between the two substrates have evaporated, a united wafer of n-type/p-type ZnSe is obtained.

5. 发明专利

JPH035391A SEMICONDUCTOR SINGLE CRYSTAL PRODUCTION DEVICE 失效
公开(公告)号：JPH035391A
公开(公告)日：1991-01-11
申请号：JP13998189
申请日：1989-06-01
申请人： TOSHIBA CORP
发明人： YASUNAGA TOSHIO , NISHIO JOSHI
IPC分类号： C30B13/00 , H01L21/208
摘要： PURPOSE:To improve the quality by disposing a temp. averaging member between a focus heating unit and a multiple crystal semiconductor lacated at the focus position of the unit and moving the focus position successively to melt and solidify the semiconductor multiple crystal body into a single crystal. CONSTITUTION:Between the focus heating unit 101 and the multiple crystal body 10, such as GaAs, a part of which is located in the focus position, the temp. an averaging member 11 made of tubular material of high melting point and high thermal conductivity, such as Mo, is disposed coaxially with the multiple crystal body 10. The multiple crystal body 10 is uniformly heated by the temp. averaging member 11 which once absorbs the heat to be collected at the focus sent from the focus heating unit 101 and gets high temp. By this heating, the temp. of the bar-shaped multiple crystal body 10 is uniformly raised in the peripheral direction, and the melting area is formed at the central position of the temp. averaging member 11. In this case, there are three cases: the case in which the focus heating unit 101 is fixed and the multiple crystal body 10 is moved, the case in which the multiple crystal body 10 is fixed and the forcus heating unit 101 is moved, and the case in which both are moved.

6. 发明专利

JPH0230692A APPARATUS FOR PULLING UP SEMICONDUCTOR SINGLE CRYSTAL 失效
公开(公告)号：JPH0230692A
公开(公告)日：1990-02-01
申请号：JP17937588
申请日：1988-07-19
申请人： TOSHIBA CORP
发明人： YASUNAGA TOSHIO , FUJII TAKASHI , NISHIO JOSHI
IPC分类号： C30B15/14 , H01L21/208
摘要： PURPOSE:To enable free control of the rotational speed of a crucible by combining a rotatable crucible, a heater, a uniform-temperature wall and a semiconductor single crystal pull-up means in such a manner as to exert a specific action. CONSTITUTION:Two coaxial supporting shafts are extended through an opening 12a. A cylindrical uniform-temperature wall 14 made of carbon or calcined BN is attached to the top end of the outside hollow 1st supporting shaft 13 interposing a space between a heater 12. The uniform-temperature wall 14 is provided with an opening 14a inside of the connection part of the 1st supporting shaft 13 and the inside 2nd supporting shaft 23 is extended through the opening 14a. A table 15 is attached to the top of the 2nd supporting shaft 23 extending through the opening 14a. The table 15 is kept from contact with the uniform-temperature wall 14. A rotation driving mechanism 16 for the 1st supporting shaft is placed below the 1st supporting shaft 13 and a rotation driving mechanism 26 for the 2nd supporting shaft is placed below the 2nd supporting shaft 23 and each supporting shaft is rotated at an independently selected rotational speed.

7. 发明专利

JPH01215786A APPARATUS FOR PRODUCING SEMICONDUCTOR SINGLE CRYSTAL 失效
公开(公告)号：JPH01215786A
公开(公告)日：1989-08-29
申请号：JP4057788
申请日：1988-02-25
申请人： TOSHIBA CORP
发明人： NISHIO JOSHI , FUJII TAKASHI , TERAJIMA KAZUTAKA , FUKUDA KATSUYOSHI , KATSUMATA TORU , YASUNAGA TOSHIO
IPC分类号： C30B15/00 , C30B27/02 , H01L21/208
摘要： PURPOSE:To obtain an apparatus, used for producing a semiconductor single crystal, capable of providing the semiconductor single crystal in a low oxygen concentration with excellent reproducibility and having a long useful life, by selecting a material for thermal shielding unit within a prescribed range based on relation to temperature distribution in a growth device. CONSTITUTION:A crucible 2 for forming a raw material melt 6 for, e.g., GaAs single crystal, is arranged in a crystal growth chamber (high-pressure vessel) in the form of an unclosed pipe. A heater 3 is placed around the above- mentioned crucible 2 and one or more thermal shielding units 41-44 are placed around the afore-mentioned heater 3 to constitute an apparatus for producing a semiconductor single crystal. The above-mentioned thermal shielding units are normally constituted of graphite. At least surface part of the thermal shielding unit 41 which is not heated at >=900K is constituted of a carbide (e.g., TiC) of a transition metal. As a result, contamination of the resultant single crystal by carbon can be effectively suppressed without emitting CO2 or CO to be a carbon contamination source as compared with the case where the afore-mentioned thermal shielding units are constituted of graphite.

8. 发明专利

JPH02120295A APPARATUS FOR PULLING UP SINGLE CRYSTAL 失效
公开(公告)号：JPH02120295A
公开(公告)日：1990-05-08
申请号：JP27294788
申请日：1988-10-31
申请人： TOSHIBA CORP
发明人： NAKADA YUJI , YASUNAGA TOSHIO , NISHIO JOSHI
IPC分类号： C30B15/22 , H01L21/208
摘要： PURPOSE:To control behavior of an atmospheric gas and enable free control of heat quantity radiated from a crystal surface by providing a rotating object having a surface on the side of a single crystal thereon on the same axis as that of a single crystal pulling up shaft. CONSTITUTION:A rotating object 120 is installed on a single crystal. If the rotating object 120 is, e.g., a disk, the surface of the disk arranged facing to the side of a single crystal and an atmospheric gas 111 is forcibly rotated by viscosity effects of the atmospheric gas. As a result, centrifugal force is added to the atmospheric gas, which flows to the outer peripheral part. When the gas reaches the vicinity of a cylindrical unit 121, the atmospheric gas flows downward if a clearance 122 is suitably small. Thereby, stable forced convection is formed to satisfactorily control the heat quantity radiated from the surface of a single crystal (107a). The number of revolutions of the rotating object 120 can be variably set by a supporting shaft 124 for the rotating object and the position in the axial direction can be moved by a means similar to a pulling up shaft 108.

9. 发明专利

JPS63308811A SUPERCONDUCTIVE WIRE MATERIAL 失效
公开(公告)号：JPS63308811A
公开(公告)日：1988-12-16
申请号：JP14407387
申请日：1987-06-11
申请人： TOSHIBA CORP
发明人： YASUNAGA TOSHIO , KATSUMATA TORU
IPC分类号： H01B12/12 , H01B12/16
摘要： PURPOSE:To obtain a compact superconductive wire material by providing a superconductive wire material at a pipe inside wall and letting refrigerant flow inside a hole. CONSTITUTION:A superconductive material 23 of Cu-Y oxide is provided at the inside face of a hollow Cu pipe 22 and an insulator 21 is provided at the outside face. For pipe, SUS will do. Refrigerant G is sent from a cooler 31, which enters from one end of a superconductive wire material 6a and flows inside the pipe and comes down through a nonconductive connecting pipe 32 and enters an other superconductive material 6b and then returns to a cooler 31. Since the power transmission distance is determined by the thermal load, in case of long distance, this loop is repeated. According to this constitution, a superconductive apparatus can be constituted only by providing a cooler at the pipe end.

10. 发明专利

JPS591994A Heat pipe for temperature control 失效
标题翻译：热管用于温度控制
公开(公告)号：JPS591994A
公开(公告)日：1984-01-07
申请号：JP10855582
申请日：1982-06-25
申请人： Toshiba Corp
发明人： ISHIZUKA MASARU , YASUNAGA TOSHIO
IPC分类号： F28D15/06 , F28D15/02
CPC分类号： F28D15/0233
摘要： PURPOSE:To regulate and control a radiating side to a predetermined temperature by a method wherein an auxiliary heater is provided in the heat pipe for controlling the temperature of a satellite or the like. CONSTITUTION:Heat, generated from a heating body 1 in the satellite, is transmitted to the radiating plate by the heat pipe 4 consisting of a wick 2 and a refrigerant 3 and is radiated into the space of cosmos. The radiating side is exposed to the space of zero degree of absolute temperature, therefore, the refrigerant 3 at the radiating side is solidified. Therefore, in case it is not necessary to radiate the heat generating in the satellite, the heat pipe is not operated, however, in case it is necessary to radiate the heat, the radiating side of the heat pipe 4 is heated by the auxiliary heater 6 and thereby regulating the temperature of the radiating side so as not to be lowered below the temperature of the solidifying point thereof. The input of the auxiliary heater 6 is determined and controlled by the operation of a micro-computer or a thermal switch made by bimetal based on a condition whether the necessity of the heat radiation is existing or not or the temperature of the radiating side is lower than the melting point of the refrigerant 3 or not.
摘要翻译：目的：通过在热管中设置辅助加热器来控制卫星等的温度的方法，将辐射侧调节和控制到预定温度。构成：由卫星上的加热体1产生的热量通过由芯2和制冷剂3构成的热管4传递到散热板，并被辐射到宇宙空间。辐射侧暴露于零度绝对温度的空间，因此，辐射侧的制冷剂3凝固。因此，在不需要辐射卫星的发热的情况下，热管不工作，但是在需要放热的情况下，热管4的放热侧被辅助加热器从而调节辐射侧的温度，使其不会降低到低于其凝固点的温度。辅助加热器6的输入根据是否存在热辐射的必要性或辐射侧的温度较低的条件由微电脑或由双金属制成的热开关的操作来确定和控制比制冷剂3的熔点高。

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