专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPH1186759A FIELD EMISSION COLD CATHODE ELECTRON DEVICE 失效
公开(公告)号：JPH1186759A
公开(公告)日：1999-03-30
申请号：JP23729597
申请日：1997-09-02
申请人： TOSHIBA CORP
发明人： FUKUDA KATSUYOSHI , NAKAMOTO MASAYUKI
IPC分类号： H01J29/94 , H01J7/18 , H01J31/12
摘要： PROBLEM TO BE SOLVED: To prevent the generation of flickers of a fluorescent material, emitter damages, etc., and to prolong life and improve reliability. SOLUTION: This field emission cold cathode electron device comprises a field emission cold cathode 10 formed with a gate 23 via an SiO2 film 22 on an Si substrate 21 and an emitter 26 which emits an electron by a tunnel effect in an opening removed of the gate 23, and an anode part 30 formed with an anode 32 on a glass substrate 31, and a fluorescent material 33 oppositely arranged to the field emitting cold cathode 10 on its top. On a part removed of the gate 23 on the SiO2 film 22 of the field emission cold cathode 10, a fine particle adsorption electrode 28 made of Ga is formed.

2. 发明专利

JPH1092347A PLANE TYPE IMAGE DISPLAY DEVICE 失效
公开(公告)号：JPH1092347A
公开(公告)日：1998-04-10
申请号：JP24378496
申请日：1996-09-13
申请人： TOSHIBA CORP
发明人： SUZUKI TAKETOSHI , NAKAMOTO MASAYUKI , FUKUDA KATSUYOSHI
IPC分类号： H01J31/12
摘要： PROBLEM TO BE SOLVED: To provide such a plane type image display device with field emission cold cathodes as being capable of selecting fluorescences without high voltage switching. SOLUTION: Plural cold cathodes 10 are arranged in rows and columns. Gate electrodes 11 (11a, 11b) consisting of sets of two electrodes divided and insulated in rows are arranged to encircle the cold cathodes 10 in the same column. The cold cathodes 10 are formed with a spindt or transfer molding method, e.g. The gate electrodes 11 are arranged perpendicular to the arrangement of a red fluorescence 12a, a green fluorescence 12b and a blue fluorescence 12c formed via an anode on the surface of a glass face plate, not explaned here.

3. 发明专利

JPH0637031A MANUFACTURE OF COMPOUND SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0637031A
公开(公告)日：1994-02-10
申请号：JP19121092
申请日：1992-07-20
申请人： TOSHIBA CORP
发明人： FUKUDA KATSUYOSHI , NAKAYAMA NORIO
IPC分类号： H01L21/265 , H01L21/263
摘要： PURPOSE:To provide a device having a protective film on the surface of a compound semiconductor which device is free from a region around a boundary between the protective film and the compound semiconductor in which region fixed charges are scattered, so as to prevent degradation of device characteristics due to a leak current flowing along the above region. CONSTITUTION:A manufacturing method of a compound semiconductor device includes a step of irradiating a semiconductor device 11 having a protective film 12 with an electron beam from above the protective film 12 so that electrons reach a boundary surface between the semiconductor 11 and the protective film 12.

4. 发明专利

JPH01241883A CRYSTAL FOR SOLID-STATE LASER 失效
公开(公告)号：JPH01241883A
公开(公告)日：1989-09-26
申请号：JP6817988
申请日：1988-03-24
申请人： TOSHIBA CORP
发明人： FUKUDA KATSUYOSHI , TERAJIMA KAZUTAKA
IPC分类号： H01S3/16
摘要： PURPOSE:To provide an excellent crystal for a solid state laser allowing easy formation of the crystal and small variation in its composition by composing the crystal of oxide single crystal of neodymium and boron. CONSTITUTION:Nd2O5 and B2O3 are mixed as materials at 1:3 of molar ratio, and approx. 200g of the mixture is contained in a platinum crucible 3. It is then heated to 1200 deg.C, and sufficiently heated for 10 hours to be melted. Then, melt 7 is set to 1155 deg.C, a seed crystal 9 made of NdB3O6 is brought into contact with the liquid, cooled at a rate of 1 deg.C per one hour, and the crystal is then pulled up. In this case, the crystal 9 is rotated at 100rpm, and the pulling speed is 1mm per one hour. Oxygen gas is introduced from a gas tube 11 into a furnace during this period. NdB3O6 crystal have almost no crack and no variation in the composition, is pale blue green transparent, cut to a rod shape having 3mm of diameter and 3cm of length, and excited by a halogen lamp, thereby providing a laser light having 1.06mum of wavelength.

5. 发明专利

JPH01241529A NONLINEAR OPTICAL CRYSTAL 失效
公开(公告)号：JPH01241529A
公开(公告)日：1989-09-26
申请号：JP6818088
申请日：1988-03-24
申请人： TOSHIBA CORP
发明人： FUKUDA KATSUYOSHI , TERAJIMA KAZUTAKA
IPC分类号： G02F1/35 , C30B15/00 , G02F1/355 , G02F1/361
摘要： PURPOSE:To facilitate crystal growth and to improve stability and SHG (secondary harmonic generation) conversion efficiency of a nonlinear optical crystal by constituting the crystal of oxide of Sr and B. CONSTITUTION:A nonlinear optical crystal is formed from a single crystal of oxide of Sr and B. The single crystal of oxide of Sr and B (Sr-B-O), particularly, a rhombic SrB2O4 has a low m.p., and the crystal is grown relatively easily by a pulling method. Moreover, the single crystal causes no phase transition at

6. 发明专利

JPH01186584A HEATING DEVICE BY ELECTROMAGNETIC WAVE 失效
公开(公告)号：JPH01186584A
公开(公告)日：1989-07-26
申请号：JP488088
申请日：1988-01-14
申请人： TOSHIBA CORP
发明人： FUKUDA KATSUYOSHI , FUJITA TAKASHI , NISHIO JOSHI
IPC分类号： H05B6/64 , F24C7/02
摘要： PURPOSE:To expand the upper limit of heating temperature by pressurizingly forming the vessel secondarily housing a heating chamber itself or a heated body. CONSTITUTION:The electromagnetic wave of a magnetron 16 is propagated in a heating chamber 12 via a waveguide 17, and a heated body 14 is heated directly or within a pressure tight vessel 20. When the chamber 12 itself is made to a required pressure tight structure, a required lock device 13 and pressure nozzle 15 provided, and leaked by the given pressure. And when the vessel 20 secondarily housing the body 14 is used, a pressure nozzle 21 is provided in the vessel 20. The body 14 can be heated to higher temperatures than when pressure is not applied since it is heated under the given air pressure in either case. Also the shortening of heating time is made to possible.

7. 发明专利

JPS6472985A APPARATUS FOR PRODUCING SEMICONDUCTOR SINGLE CRYSTAL 失效
公开(公告)号：JPS6472985A
公开(公告)日：1989-03-17
申请号：JP22861287
申请日：1987-09-14
申请人： TOSHIBA CORP
发明人： FUJITA HIROMOTO , FUKUDA KATSUYOSHI , NISHIO JOSHI , TERAJIMA KAZUTAKA
IPC分类号： C30B15/00 , C30B15/10 , H01L21/208
摘要： PURPOSE:To prevent the failure, etc., of a crucible during the transportation thereof and to obtain a large-sized single crystal with good workability by fastening the crucible by means of a furnace member enclosing the crucible to integrate the crucible and further, providing holding parts for transportation to the furnace member. CONSTITUTION:The crucible 11 and a supporting base 12 which supports the crucible 11 are fastened and integrated by a reinforcing material 13 and thread working and further, the holding parts for transportation, for example, two holes 13' are provided to the crucible. A raw material is housed into such crucible 11 and the crucible is disposed in a high-pressure vessel 14. After the inside of the vessel is pressurized by gaseous Ar, the crucible 11 is heated by a heater 15 which coaxially encloses the crucible. A raw material 16 is thus obtd. A seed crystal 17 is then lowered and is held in contact with he melt 16; thereafter, the seed crystal 17 is pulled up while the crystal is kept rotated by which the single crystal is obtd. The supporting base 12 which houses the crucible 11 and is assembled with the reinforcing material 13 is taken in this state out of the high-pressure vessel 14 after the end of the production of the single crystal. The content remaining in the crucible 11 is taken out and the reinforcing material 13 is removed. The crucible 11 is taken out of the supporting base 12 and is cleaned.

8. 发明专利

JPS63310797A OXIDE SUPERCONDUCTING ELEMENT WAFER 失效
公开(公告)号：JPS63310797A
公开(公告)日：1988-12-19
申请号：JP14572087
申请日：1987-06-11
申请人： TOSHIBA CORP
发明人： TERAJIMA KAZUTAKA , FUKUDA KATSUYOSHI
IPC分类号： C30B19/02 , C30B29/22 , H01B12/06 , H01L39/12 , H01L39/22 , H01L39/24
摘要： PURPOSE:To provide an element wafer having a crystal layer comprising a multicomponent oxide superconductor by forming a crystal layer of the multicomponent oxide superconductor on a crystal substrate consisting of oxides of >=two kinds of metal element constituting the crystal layer. CONSTITUTION:For example, a soln. 22 contg. powder of Y2O3 and powder of CuO dissolved in a flux comprising a liquid mixture of BaCO3 and B2O3 is prepd. in a Pt crucible 21 of a liquid phase growth device. A BaCuO2 crystal substrate 23 held by a holder 25 provided to a tip end of a supporting rod 24 is allowed to contact with the soln. 22. Liquid epitaxial growth is proceeded while revolving the substrate 23 at high speed with a specified cooling rate. By this method, an epitaxial wafer having a uniform YBa2Cu3O7-delta single crystal layer formed with a specified thickness on the BaCuO2 crystal substrate is obtd.

9. 发明专利

JPS63206396A PRODUCTION OF III-V COMPOUND SEMICONDUCTOR SINGLE CRYSTAL 失效
公开(公告)号：JPS63206396A
公开(公告)日：1988-08-25
申请号：JP3805987
申请日：1987-02-23
申请人： TOSHIBA CORP
发明人： NISHIO JOSHI , FUKUDA KATSUYOSHI
IPC分类号： C30B27/02 , C30B29/42
摘要： PURPOSE:To form a single crystal having uniform characteristics from the top to the tail of the single crystal and having sufficiently excellent electrical characteristics as a substrate for ultrahigh-speed integrated circuit, by specifying the rotational speed of a crucible, the initial composition of molten liquid, the magnetic field strength, etc., in the production of a III-V compound semiconductor single crystal by MLEC process. CONSTITUTION:A III-V compound semiconductor single crystal is produced by the following 3 steps of (a)-(c). (a) A step to hold a group III element and a group V element in a crucible 12 placed in a single crystal pulling-up vessel 11, (b) a step to heat the crucible 12 with a heater 14 attached to the outside of the crucible 12, react the group III element with the group V element while rotating the crucible at a prescribed rotational speed and obtain a molten liquid of III-V compound semiconductor having a compositional ratio of the group III element to the group V element of =3,000[Oe].

10. 发明专利

JPS63176391A HEATER FOR PRODUCTION OF SINGLE CRYSTAL 失效
公开(公告)号：JPS63176391A
公开(公告)日：1988-07-20
申请号：JP394787
申请日：1987-01-13
申请人： TOSHIBA CORP
发明人： NISHIO JOSHI , KATSUMATA TORU , FUKUDA KATSUYOSHI , TERAJIMA KAZUTAKA
IPC分类号： C30B15/14 , C30B27/02
摘要： PURPOSE:To enable the production of a single crystal having high uniformity and free from growth stripes, in high yield, preventing the formation of twins and polycrystals, by using a heater having a specific structure, thereby improving the heat-generation uniformity of the heater. CONSTITUTION:The objective heater for the production of a single crystal is composed of a side-wall part 11 coaxially encircling a crucible containing a raw material for single crystal, a base part 12 supporting the side-wall part 11 and an electrode-attaching part 14 supporting the base part 12 and connected to a power source electrode. The above three parts are integrated. Plural slits 15 are applied to the side-wall part 11 in a manner that the wall forms a continuous heater extending from an electrode to the other electrode of the above power source electrodes. The base part 12 is connected to the side-wall part 11 in a plane in which the electrode is connected to the electrode attaching part 14, in a direction having an angle of 45-90 deg. from the line (A-A') connecting the center of an electrode rod and that of the other electrode rod of the above power source electrodes taking the center of axis of the crucible and the side- wall part 11 as the center of the angle and in a plane perpendicular to the above plane.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式