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1. 发明专利

JPS63176391A HEATER FOR PRODUCTION OF SINGLE CRYSTAL 失效
公开(公告)号：JPS63176391A
公开(公告)日：1988-07-20
申请号：JP394787
申请日：1987-01-13
申请人： TOSHIBA CORP
发明人： NISHIO JOSHI , KATSUMATA TORU , FUKUDA KATSUYOSHI , TERAJIMA KAZUTAKA
IPC分类号： C30B15/14 , C30B27/02
摘要： PURPOSE:To enable the production of a single crystal having high uniformity and free from growth stripes, in high yield, preventing the formation of twins and polycrystals, by using a heater having a specific structure, thereby improving the heat-generation uniformity of the heater. CONSTITUTION:The objective heater for the production of a single crystal is composed of a side-wall part 11 coaxially encircling a crucible containing a raw material for single crystal, a base part 12 supporting the side-wall part 11 and an electrode-attaching part 14 supporting the base part 12 and connected to a power source electrode. The above three parts are integrated. Plural slits 15 are applied to the side-wall part 11 in a manner that the wall forms a continuous heater extending from an electrode to the other electrode of the above power source electrodes. The base part 12 is connected to the side-wall part 11 in a plane in which the electrode is connected to the electrode attaching part 14, in a direction having an angle of 45-90 deg. from the line (A-A') connecting the center of an electrode rod and that of the other electrode rod of the above power source electrodes taking the center of axis of the crucible and the side- wall part 11 as the center of the angle and in a plane perpendicular to the above plane.

2. 发明专利

JPS6389497A PRODUCTION OF SILICON-ADDED GALLIUM ARSENIC SINGLE CRYSTAL 失效
公开(公告)号：JPS6389497A
公开(公告)日：1988-04-20
申请号：JP22973086
申请日：1986-09-30
申请人： TOSHIBA CORP
发明人： NISHIO JOSHI , FUKUDA KATSUYOSHI , TERAJIMA KAZUTAKA , KATSUMATA TORU
IPC分类号： C30B27/02 , C30B29/42 , H01L21/18
摘要： PURPOSE:To produce the title single crystal having a low dislocation density by charging Si (compd.) into the raw material melt contg. Ga and As in a specified ratio in a crucible, heating the crucible, and pulling up the single crystal. CONSTITUTION:A crucible 12 contg. a mixture of Ga and As in the 0.96-0.98 atomic ratio of Ga/As, the Si (compd.) as an impurity additive, and B2O3 as a sealant is set in the heater 13, heat shielding body 14, etc., arranged in a high-pressure vessel 11. The inside of the vessel 11 is evacuated, and then an inert gas is introduced. The heater 13 is then energized to heat the crucible 12, hence Ga is allowed to react with As to form a raw material melt 15, and the liq. sealant layer 156 is positioned on the melt. The melt 15 is then kept at a temp. optimum for seeding while monitoring a thermocouple 19, then a lifting shaft 18 is lowered, and a seed crystal 17 is brought into contact with the melt 15 through the liq. sealant layer 16 and then pulled up.

3. 发明专利

JPH01134000A DEVICE FOR PRODUCING SEMICONDUCTOR SINGLE CRYSTAL 失效
公开(公告)号：JPH01134000A
公开(公告)日：1989-05-26
申请号：JP29275487
申请日：1987-11-19
申请人： TOSHIBA CORP
发明人： NISHIO JOSHI , FUJII TAKASHI , TERAJIMA KAZUTAKA , FUKUDA KATSUYOSHI , KATSUMATA TORU
IPC分类号： C30B27/02 , C30B35/00
摘要： PURPOSE:To stably produce a semiconductor single crystal having a low content of carbon by forming at least the surface of the specified member among the heat-insulating or heat-shielding members arranged in a vessel of the title device with SiC, Si3N4, or AlN. CONSTITUTION:An opened raw material storage part 2 such as a crucible made of PBN is arranged in the high-pressure vessel 1 of the device, an annular heater 3 is provided around the storage part 2, and a heat-insulating or heat- shielding graphitic body 4 is provided at the part (inner heat-shielding body) to be heated to >=900 K around the heater 3. A heat-shielding body 5 with at least the surface coated with SiC, Si3N4, or lN is provided at the part (outer heat-shielding body) to be heated to =900 K and the outer heat-shielding body to

4. 发明专利

JPH01131098A PRODUCTION OF OXIDE SUPERCONDUCTOR CRYSTAL 失效
公开(公告)号：JPH01131098A
公开(公告)日：1989-05-23
申请号：JP28811787
申请日：1987-11-13
申请人： TOSHIBA CORP
发明人： FUKUDA KATSUYOSHI , NISHIO JOSHI , KATSUMATA TORU
IPC分类号： C30B17/00 , C30B29/22 , H01B12/00 , H01B13/00 , H01L39/12 , H01L39/24
摘要： PURPOSE:To facilitate the production of plural oxide superconductor of good quality by using flux containing vanadium oxide, when the crystal of plural oxide superconductor is allowed to grow by the liquid-phase growth method. CONSTITUTION:A solution 7 of flux containing vanadium oxide such as V2O5, and raw materials of plural oxide superconductor such as a mixture of Y2O3, 2BaO, and 3CuO, is charged in the crucible 3 in the single crystal-pulling up unit. Then, the solution 7 is heated with heater 2 at about 1,200-1,300 deg.C and cooled down to about 700 deg.C. Then, the seed crystal such as of Y-Ba-Cu-O single crystal on the top of the pulling-up shaft 8 is allowed to contact with the solution 7 and the oxide superconductor is pulled up, as an oxygen gas is fed from pipe 12. Thus, crystals of oxide supercouductor with high homogeneity of superconductive transition point and large critical current can be produced with high reproducibility.

5. 发明专利

JPS63308811A SUPERCONDUCTIVE WIRE MATERIAL 失效
公开(公告)号：JPS63308811A
公开(公告)日：1988-12-16
申请号：JP14407387
申请日：1987-06-11
申请人： TOSHIBA CORP
发明人： YASUNAGA TOSHIO , KATSUMATA TORU
IPC分类号： H01B12/12 , H01B12/16
摘要： PURPOSE:To obtain a compact superconductive wire material by providing a superconductive wire material at a pipe inside wall and letting refrigerant flow inside a hole. CONSTITUTION:A superconductive material 23 of Cu-Y oxide is provided at the inside face of a hollow Cu pipe 22 and an insulator 21 is provided at the outside face. For pipe, SUS will do. Refrigerant G is sent from a cooler 31, which enters from one end of a superconductive wire material 6a and flows inside the pipe and comes down through a nonconductive connecting pipe 32 and enters an other superconductive material 6b and then returns to a cooler 31. Since the power transmission distance is determined by the thermal load, in case of long distance, this loop is repeated. According to this constitution, a superconductive apparatus can be constituted only by providing a cooler at the pipe end.

6. 发明专利

JPS63270390A PRODUCTION OF COMPOUND SEMICONDUCTOR 失效
公开(公告)号：JPS63270390A
公开(公告)日：1988-11-08
申请号：JP10458387
申请日：1987-04-30
申请人： TOSHIBA CORP
发明人： KATSUMATA TORU
IPC分类号： H01L21/208 , C30B15/26 , C30B27/02
摘要： PURPOSE:To clearly observe the interior of a high-pressure furnace, by blowing an inert gas without containing any volatile element on the inner end face of the high-pressure furnace of a quartz or sapphire rod for observing the interior of the furnace. CONSTITUTION:A crystal raw material and an encapsulating agent are fed into a crucible 22 in a pressure vessel 21 and the crucible 22 is heated by a heating element 23 to melt the crystal raw material and encapsulating agent and cover the raw material melt 24 with the liquid encapsulating agent 25. An inert gas without containing any volatile element is passed from the outside of the furnace through an introduction pipe 26 and blown on the end face of a quartz or sapphire rod 27 in the interior of the furnace for observing the interior of the furnace. Thereby the end face is prevented from fouling by sticking of volatile elements to the end face of the rod 27 and a single crystal is pulled up while observing single crystal growth condition from the other end face without clouding.

7. 发明专利

JPS63172941A METHOD FOR MEASURING DIFFUSION CONSTANT OF COMPOUND AND ALLOY IN MOLTEN STATE 失效
公开(公告)号：JPS63172941A
公开(公告)日：1988-07-16
申请号：JP394587
申请日：1987-01-13
申请人： TOSHIBA CORP
发明人： YOSHIDA HIROAKI , KATSUMATA TORU , FUKUDA KATSUYOSHI , TERAJIMA KAZUTAKA
IPC分类号： H01L21/66 , G01N13/00
摘要： PURPOSE:To determine the more precise diffusion speed and to obtain a uniform material having high quality by alternately joining two kinds of small piece samples to each other and subjecting the samples to heating, melting and resolidifying in a convectionless state in a magnetic field. CONSTITUTION:The sample of testing diffusion is constituted by alternately jointing two kinds of the small pieces sample, CaSb layers 6 and InSb layers 7 and sandwiching both ends with silicon plates 8 in order to obtain a uniform liquid boundary. The sample prepd. by laminating plural sheets of such samples are disposed in an electric oven 1 and the magnetic field is impressed thereto by an electromagnet 2. The samples are then subjected to heating, melting nd resolidifying in the pseudo gravityfree state of decreased convection while a temp. gradient is held applied in the joining direction of the raw materials. The exact diffusion speed is measured by measuring the element distribution in the joining direction by mass spectrometry, etc. The determination of the diffusion speed in the liquid which is heretofore impossible is thereby permitted and, therefore the uniform material having the high quality is obtd.

8. 发明专利

JPS6487598A TREATMENT OF RAW MATERIAL FOR COMPOUND SEMICONDUCTOR POLYCRYSTAL 失效
公开(公告)号：JPS6487598A
公开(公告)日：1989-03-31
申请号：JP24405287
申请日：1987-09-30
申请人： TOSHIBA CORP
发明人： KATSUMATA TORU , FUKUDA KATSUYOSHI
IPC分类号： C01B25/08 , C30B27/02 , C30B29/40 , H01L21/208
摘要： PURPOSE:To obtain a single crystal which obviates the generation of defects at a high yield by chemically etching a polycrystal raw material, then subjecting the polycrystal to a heating treatment in hydrogen or hydrogen-contg. inert gas and packing the treated crystal in a crucible at the time of producing the compd. semiconductor single crystal by an LEC method. CONSTITUTION:The following method is adopted at the time of producing the compd. semiconductor single crystal by a liquid sealing Czochralski method using the polycrystal raw material: The polycrystal raw material to be used is chemically etched and is then heated for the prescribed time in the hydrogen or the inert gaseous atmosphere contg. hydrogen by which the surface is completely reduced; thereafter, the crystal is packed in the crucible. The formation of the oxide film on the surface of the raw material melt at the time of crystal growth which is heretofore the cause for the generation of defects is prevented by adopting the above-mentioned method.

9. 发明专利

JPS6445798A PRODUCTION OF SINGLE CRYSTAL BY LIQUID-ENCAPSULATED PULLING UP METHOD 失效
公开(公告)号：JPS6445798A
公开(公告)日：1989-02-20
申请号：JP20130487
申请日：1987-08-12
申请人： TOSHIBA CORP
发明人： NISHIO JOSHI , KATSUMATA TORU , FUKUDA KATSUYOSHI , TERAJIMA KAZUTAKA
IPC分类号： H01L21/18 , C30B27/02
摘要： PURPOSE:To optimize a position in the direction of a pulling up shaft for a crucible and thereby obtain a long compound single crystal, by measuring temperature gradient in the radial direction of the crucible at each position in the direction of the pulling up shaft for the crucible. CONSTITUTION:A jig 22, having thermocouples (23a)-(23c) fixed and held in the radial direction of a crucible 12 and connecting to a pulling up shaft 21 is placed. The interior of a high-pressure vessel 11 is heated with a heater 13 while being evacuated to keep the temperature at the bottom of the crucible 12 at a given high value. The shaft 21 is then raised and lowered so as to place the tips of the thermocouples 23 at the positions of the liquid level when a raw material melt 16 is introduced into the crucible 12. Temperature distribution in this state is recorded on a recorder 24. On the other hand, temperature distribution in the radial direction of the crucible is determined from temperature difference of the central thermocouple (34b) from the surrounding thermocouples (34a) and (34c). A melt 16 and a liquid encapsulating layer 17 are subsequently contained in the crucible 12 in this state and the vertical set position of the crucible 12 is determined so as to provide the surface 16 of the melt 16 at the position in the direction of the shaft 21. A single crystal is then pulled up and down in this state and the crucible 12 is simultaneously raised so as to place the surface of the melt 16 at a position in the direction of the shaft 21 according to the lowering of the melt 16 accompanied by the pulling up of the single crystal.

10. 发明专利

JPS63310521A MANUFACTURE OF OXIDE SUPERCONDUCTOR FIBER 失效
公开(公告)号：JPS63310521A
公开(公告)日：1988-12-19
申请号：JP14663587
申请日：1987-06-12
申请人： TOSHIBA CORP
发明人： KATSUMATA TORU , TERAJIMA KAZUTAKA , NAKADA YUJI , FUKUDA KATSUYOSHI , YOSHIDA HIROAKI , NISHIO JOSHI , FUJII TAKASHI
IPC分类号： B28B1/00 , H01B12/04 , H01B13/00
摘要： PURPOSE:To prevent a breaking in the manufacture of a fiber and to obtain a long fiber by using a material core wire in which some of metallic elements to compose a desired pluralitic oxide are short, and diffusing the necessary metallic element in the core material. CONSTITUTION:As the YBaO material 11, a composite of necessary component metal elements in which Cu is short is used. It is heated by a heater 13, a wire drawing process is executed to produce a material core wire 12 with the diameter of 1mm. To the core material 12, the metallic Cu is vacuum-evaporated or spattered, and the surface is covered with the Cu layer 15 of about 1mm thick. After that, the core material 12 is moved in an infrared ray concentration heating furnace 16 at the speed 1cm/min, extended up to the diameter 0.5mm, made into a desired YBaCuO type superconductor fiber 17, and wound on a drum 18. By making the core material 12 into a Cu-short YBaO, then covering it with the Cu layer which is strong against a breaking, and executing a wire drawing process, in such a way, no breaking is generated during the manufacture process, and an excellent pluralistic type oxide superconductor fiber can be produced.

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