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    • 1. 发明专利
    • Non-lead-based joining material
    • 非铅基接合材料
    • JP2005103562A
    • 2005-04-21
    • JP2003337126
    • 2003-09-29
    • Toshiba Corp株式会社東芝
    • TADAUCHI KIMIHIROKOMATSU IZURUMATSUMOTO KAZUTAKASUZUKI ISAOIMAMURA HIROKO
    • B23K35/26C22C13/00H05K3/34
    • PROBLEM TO BE SOLVED: To provide a soldering material of high joining reliability and excellent in wettability which contains no lead as an environment-harmonized material suitable for mounting/joining electronic components on/with a substrate, and prevents oxidation of zinc.
      SOLUTION: Non-lead-based joining particles are obtained by selecting either zirconium or molybdenum as additive element to the tin-zinc binary system or the tin-zinc-bismuth ternary system, and excellent joining reliability is ensured by improving the characteristic of zinc-containing solder which is easily oxidized. The non-lead-based joining particles are applicable to a micro electric connection area of an IC package such as BGA (ball grid array) and CSP (chip scale package) used for the surface mounting as joining particles for metallic members.
      COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:提供具有高接合可靠性和优异的润湿性的焊接材料,其不含铅作为适合于将电子部件安装/接合在基板上的环境协调材料,并且防止锌的氧化。 解决方案:通过选择锆或钼作为锡锌二元体系或锡 - 锌 - 铋三元体系的添加元素,可以获得非铅基接合颗粒,并且通过改善特性来确保优异的接合可靠性 的容易氧化的含锌焊料。 非铅系接合粒子适用于作为金属部件的接合粒子的表面安装用的BGA(球栅阵列),CSP(芯片尺寸封装)等IC封装的微电连接区域。 版权所有(C)2005,JPO&NCIPI
    • 6. 发明专利
    • BONDING WIRE
    • JPH06168975A
    • 1994-06-14
    • JP19668693
    • 1993-07-15
    • TOSHIBA CORP
    • SATO MICHIOSUZUKI ISAOYAMAMORI KAZUHIRO
    • H01L21/60C22C9/00
    • PURPOSE:To improve creep strength and bonding quality, by using a Cu bonding wire containing a specific amount of specific metal. CONSTITUTION:In virtue of fine amount addition, In, B, Bi, Ge and Si retard the recovery of dislocation and grain boundary transfer at the time of recrystallization, so that the recrystallization temperature is increased, and the grain boundary breaking of a Cu bonding wire is prevented. The content is set to be 20-360wtppm. As, Zn, K, Sr, Mg, Ca and Tl vaporize from Cu at the time of Cu ball formation, so that the permeation of oxygen into the Cu ball and the hardening of the Cu ball are prevented. The content is set to be 10-650wtppm. Sb, P, Li, Sn, Pb and Cd react with permeated oxygen at the time of Cu ball formation, and generate oxide, which evaporates from the Cu ball and softens it. The content is set to be 25-250wtppm. Letting the above metal groups be as A, B and C, the combination of A and B or the combination of A and C is added to high purity copper.
    • 7. 发明专利
    • BONDING WIRE
    • JPH06168974A
    • 1994-06-14
    • JP19668593
    • 1993-07-15
    • TOSHIBA CORP
    • SATO MICHIOSUZUKI ISAOYAMAMORI KAZUHIRO
    • H01L21/60C22C9/00
    • PURPOSE:To improve creep strength and bonding quality, by using a Cu bonding wire containing a specific amount of specific metal. CONSTITUTION:In virtue of very small amount addition, Zn, Hf, Ti, Cr and Mn retard the recovery of dislocation and grain boundary transfer at the time of recrystallization, so that the recrystallization temperature is increased, and the grain boundary breaking of a Cu bonding wire is prevented. The content is set to be 20-560wtppm. Sb, P, Li, Sn, Pb and Cd react with permeated oxygen at the time of Cu ball formation, and generate oxide, which evaporates from the Cu ball and softens it. The content is set to be 25-250wtppm. As, Zn, K, Sr, Mg, Ca and Tl vaporize from Cu at the time of Cu ball formation, so that the permeation of oxygen into the Cu ball and the hardening of the Cu ball are prevented. The content is set to be 10-650wtppm. Letting the above metal groups be A, B and C, the combination of A and B or the combination of A and C is added to high purity copper.
    • 8. 发明专利
    • LINEAR MOTOR
    • JPH02223369A
    • 1990-09-05
    • JP4348189
    • 1989-02-23
    • TOSHIBA CORP
    • ISHIBASHI AYANORISUZUKI ISAOKUSUNOKI SHIGEOTAKEUCHI FUMIAKI
    • H02K33/18H02K41/035
    • PURPOSE:To enable conducting the detection of a position with a good accuracy without being subject to the influence of a vibration by providing a position transducer composed of a rotary member turning in company with the movement of a moving body and a detector for detecting the rotating quantity of said rotating member at the position on the other edge part side relative to a movable element in said moving body. CONSTITUTION:A position transducer 32 is composed of a disc 33 being a rotator and a detector 34 for detecting the rotating quantity of the disc 33. The disc 33 is provided at one end of a roller shaft 29 to rotate integrally therewith. The detector 34 is composed of a light-emitting element 35 and a light-receiving element 36, which elements are fitted to a moving body 25 so as to bold the circumferential part of the disc 33 between and to detect the rotating quantity of the disc 33 by detecting the passage of the translucent part of said disc 33. As the disk 33 rotates on the basis of the movement of the moving body 25, the moving position of the moving body 25 is detected by detection of the rotating quantity of the disc 33. Thus, the detection of a moving position can be conducted with a good accuracy without being subject to the influence of vibration, etc.
    • 10. 发明专利
    • SEMICONDUCTOR DEVICE
    • JPS61241961A
    • 1986-10-28
    • JP8258285
    • 1985-04-19
    • TOSHIBA CORP
    • SATO MICHIOSUZUKI ISAO
    • C22C32/00C22C9/00H01L21/60H01L23/49
    • PURPOSE:To improve creep strength, low-cycle fatigue strength and corrosion resistance, by using wire material comprising specified single crystal copper alloy as a lead wire for wire bonding. CONSTITUTION:As a lead wire for wire bonding, wire material comprising a single crystal copper alloy, which includes 0.2-1.0vol% of at least one kind of material selected from among the group comprising aluminum oxide, silicon oxide, titanium oxide, zirconium oxide, chromium oxide and beryllium oxide, is used. In order to keep strength at high temperature, it is necessary that the size of a particle is 70nm or less and an interval between the particles is 900nm or less. For this purpose, internal oxidation treatment is carried out within a temperature range of 800-1,050 deg.C for 3-24hr. Thus creep due to the load of tensile stress and the fracture life due to low cycle fatigue are improved to a large extent. The fracture life is increased, and corrosion resistance becomes excellent.