专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2004128738A Thin film piezoelectric resonator and high frequency filter 有权
公开(公告)号：JP2004128738A
公开(公告)日：2004-04-22
申请号：JP2002287865
申请日：2002-09-30
申请人： Toshiba Corp , 株式会社東芝
发明人： ARAKI HIROTA , KAYANO HIROYUKI , IZEKI YUJI , YOSHIDA HIROSHI , OHARA RYOICHI , ABE KAZUHIDE , ITAYA KAZUHIKO , KAWAKUBO TAKASHI
IPC分类号： H03H9/58 , H03H9/17
摘要： PROBLEM TO BE SOLVED: To provide a high frequency filter the pass band of which is broadened.
SOLUTION: A thin film piezoelectric body is interposed between two pairs of pole plates respectively opposed to each other to form a thin film piezoelectric resonator 103. Among the pole plates of each pair of the thin film piezoelectric resonator 103, the pole plates fitted to the different surfaces of the thin film piezoelectric resonator 103 are grounded to obtain a resonance output whose phase is inverted to the phase of an input signal. Then thin film piezoelectric resonators 101, 102 are connected in a ladder form to provide a first filter with a center frequency f1 and thin film piezoelectric resonators 103, 104 are connected in a ladder form to provide a second filter with a center frequency f2 different from the center frequency f1. The high frequency filter is formed by connecting the first and second filters in parallel.
COPYRIGHT: (C)2004,JPO

2. 发明专利

JPH10200042A ULTRA-HIGH FREQUENCY PACKAGE 失效
公开(公告)号：JPH10200042A
公开(公告)日：1998-07-31
申请号：JP24296497
申请日：1997-09-08
申请人： TOSHIBA CORP
发明人： KONNO YOSHIO , HANAWA TAKESHI , IZEKI YUJI
IPC分类号： H01L23/12 , H01L23/50 , H01P3/08 , H01P5/08
摘要： PROBLEM TO BE SOLVED: To realize an ultra-high frequency and small loss package for microwave and millimeter wave use. SOLUTION: The package has a strip line at a feed-through part. The strip line has a slit at the center conductor 23 to relax the current concentration on the strip line end, reduces the pass loss, and utilizes the suppression effect of the slit for unwanted modes. The center conductor or part thereof uses a high-m.p. metal thin wire 24 having approximately a circular section which can be baked with ceramics 9 such as alumina. The characteristic impedance of the strip line at the feed-through part is set to a higher value than specified characteristic impedance.

3. 发明专利

JPH0982760A SEMICONDUCTOR DEVICE, SEMICONDUCTOR ELEMENT AND SOLDER CONNECTING PART INSPECTING METHOD THEREFOR 失效
公开(公告)号：JPH0982760A
公开(公告)日：1997-03-28
申请号：JP17041296
申请日：1996-06-28
申请人： TOSHIBA CORP
发明人： SHIZUKI YASUSHI , IZEKI YUJI , YOSHIHARA KUNIO , YAMADA HIROSHI , SAITO MASAYUKI , ONO NAOKO , TATEYAMA KAZUKI
IPC分类号： G01R31/04 , H01L21/60 , H01L21/66 , H01L23/485 , H01L23/498 , H05K1/02 , H05K1/11 , H05K1/18 , H05K3/34 , H05K3/36
摘要： PROBLEM TO BE SOLVED: To make it possible to mount a semiconductor device at a high density and to obtain the device having excellent reliability by providing solder resist so formed as to surround a semiconductor element at a predetermined distance on a circuit board. SOLUTION: The semiconductor device comprises a circuit board 13 having a plurality of pad electrodes 14, a semiconductor element 11 mounted thereon, and solder resist 17 so formed as to surround the element 11 at a predetermined distance. Further, the device comprises a plurality of terminal electrodes 12 provided at the end of the element 11, a gap provided between the board 13 and the element 11, and a plurality of solder bumps 15 for connecting the electrodes 14 to the electrodes 12. The electrode 14 includes the part extended from the lower part of the electrode 12 of the element 11 to the resist 17 at the outside of the element 11. The bump 15 has the part 151 extended onto the part extended to the outside of the element 11 of the electrode 14.

4. 发明专利

JPH07202075A SEMICONDUCTOR MODULE 失效
公开(公告)号：JPH07202075A
公开(公告)日：1995-08-04
申请号：JP34953093
申请日：1993-12-28
申请人： TOSHIBA CORP
发明人： IZEKI YUJI , ONO NAOKO , TAKAGI EIJI
IPC分类号： H01L23/14 , H05K1/00 , H05K1/05
摘要： PURPOSE:To reduce the number of manufacture steps and downsize a module, in the semiconductor module which prevents needless radiation. CONSTITUTION:A semiconductor module 44, where a wiring board 43 and a metallic case are united, is constituted by mounting electronic components 41a-41d including semiconductor elements on a wiring board 30 whose surface is covered with a conductor layer, and wiring them, and then, bending the wiring board 43 being cut out of the wiring board 30, and forming a casing, which functions as a metallic case for screening needless radiation, out of this wiring board 43.

5. 发明专利

JP2004111767A Semiconductor element and semiconductor device 有权
公开(公告)号：JP2004111767A
公开(公告)日：2004-04-08
申请号：JP2002274367
申请日：2002-09-20
申请人： Toshiba Corp , 株式会社東芝
发明人： IZEKI YUJI , KAYANO HIROYUKI , ARAKI HIROTA , YASUMOTO YASUAKI , ABE KAZUHIDE , SANO KENYA , OHARA RYOICHI , ITAYA KAZUHIKO , KAWAKUBO TAKASHI
IPC分类号： H01L23/12 , H01L23/02 , H01L23/08
CPC分类号： H01L2224/48091 , H01L2224/73204 , H01L2224/73265 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which reduces the space utilized, when mounting a semiconductor element without causing deterioration of element characteristics. SOLUTION: The semiconductor element comprises an air bridge formed so as to coat an element, such as FBAR or the like formed on a surface of a semiconductor substrate via an air gap. The semiconductor device is sealed with a resin, having the air gap for forming the air bridge. COPYRIGHT: (C)2004,JPO

6. 发明专利

JP2003197848A SEMICONDUCTOR PACKAGE AND PACKAGE MOUNT BODY 审中-公开
公开(公告)号：JP2003197848A
公开(公告)日：2003-07-11
申请号：JP2001400972
申请日：2001-12-28
申请人： TOSHIBA CORP
发明人： IZEKI YUJI , ONO NAOKO
IPC分类号： H01L23/12 , H01L23/00 , H01L25/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor package which is easily aligned on an assembly board and enables easy determination of allocation of outer connection pads and can be mounted with little failure and enables an efficient visual inspection after mounting. SOLUTION: The semiconductor package comprises a tabular package base 2a, surface interconnection patterns 63a, 64a, 65a, and 66a disposed on a first principal surface of the package base 2a, a plurality of outer connection pads 31a and 36a disposed on a second principal surface of the package base 2a, a semiconductor chip 1 mounted on the surface interconnection pattern 65a, molding resin 5a formed on the first principal surface so as to seal the semiconductor chip 1, and a plurality of pad display patterns 51a and 56a disposed on the surface of the molding resin 5a so as to correspond to the outer connection pads 31a and 36a. COPYRIGHT: (C)2003,JPO

7. 发明专利

JP2003017651A High frequency semiconductor device 审中-公开
标题翻译：高频半导体器件
公开(公告)号：JP2003017651A
公开(公告)日：2003-01-17
申请号：JP2001199712
申请日：2001-06-29
申请人： Toshiba Corp , 株式会社東芝
发明人： ONO NAOKO , YAMAGUCHI KEIICHI , IZEKI YUJI
IPC分类号： H01L25/18 , H01L21/338 , H01L21/822 , H01L25/04 , H01L27/04 , H01L29/812
CPC分类号： H01L2224/16225 , H01L2924/12032 , H01L2924/1305 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a small and high performance high frequency power semiconductor device having a smaller phase difference within an active element. SOLUTION: This device has an assembly substrate 2 having input side high frequency transmission lines (61a, 62a and 63a) and output side high frequency transmission lines (61b, 62b and 63b), a first semiconductor chip 51 mounted on a first main surface side of the assembly substrate 2, and a second semiconductor chip 52 mounted on a second main surface side of the assembly substrate 2. The semiconductor chip 51 is provided with a semiconductor active element having a first input electrode (gate electrode pad) 408 and a first output electrode (drain electrode) 410. The semiconductor chip 52 is provided with a semiconductor active element having a second input electrode 428 and a second output electrode 430 which are in a mirror image relation mutually with the first input electrode 408 and the first output electrode 410 respectively.
摘要翻译：要解决的问题：提供一种在有源元件内具有较小相位差的小型和高性能的高频功率半导体器件。解决方案：该装置具有具有输入侧高频传输线（61a，62a和63a）和输出侧高频传输线（61b，62b和63b）的组装基板2，安装在第一主表面侧的第一半导体芯片51 和安装在组装基板2的第二主表面侧的第二半导体芯片52.半导体芯片51设置有半导体有源元件，该半导体有源元件具有第一输入电极（栅电极焊盘）408和第一输出电极（漏极）410.半导体芯片52设置有半导体有源元件，其具有与第一输入电极408和第一输出电极相互成镜像关系的第二输入电极428和第二输出电极430 410。

8. 发明专利

JP2000133674A BALL BONDING METHOD AND DEVICE 失效
公开(公告)号：JP2000133674A
公开(公告)日：2000-05-12
申请号：JP30140398
申请日：1998-10-22
申请人： TOSHIBA CORP
发明人： IZEKI YUJI
IPC分类号： H01L21/60
摘要： PROBLEM TO BE SOLVED: To raise the mounting yield by a method wherein a charge removal process for removing a charge in a wire and a ball is provided between a process for forming the ball on the point of the wire by discharge of an electric torch electrode and a first bonding process. SOLUTION: A ball 1a is formed on the point of a wire 1 by discharge of an electric torch electrode and a charge removal process 11 for removing a charge in the wire 1 and the ball 1a is provided between this ball formation process and a first bonding process. Or a switch 12 is used as charge removal circuits, the charge removal circuit on one side of the charge removal circuits is connected electrically with the wire 1 and the other charge removal circuit is earthed. This switch 12 is controlled by a signal from a control circuit 7 and is turned on at the time of the process 11. The switch 12 may be formed of an electronic element and may be constituted of a mechanical switch. Or clampers for charge removal are provided as the charge removal circuits, the clamper on one side of the clampers for charge removal is earthed, and when the wire is clamped by the earthed clamper, the wire is earthed.

9. 发明专利

JPH08250626A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH08250626A
公开(公告)日：1996-09-27
申请号：JP5016495
申请日：1995-03-09
申请人： TOSHIBA CORP
发明人： MIZUKAMI HIROSHI , SASAKI TOMIYA , IZEKI YUJI , IYOGI YASUSHI , NISHIBORI KAZUYA , MATSUOKA FUMITOMO
IPC分类号： H01L23/34 , H01L23/473
摘要： PURPOSE: To provide a semiconductor device wherein a semiconductor chip is effectively and sufficiently cooled and in active circuit element or the like can be formed in the semiconductor chip with high level of integration. CONSTITUTION: A plurality of cooling holes 22 are formed on a semiconductor chip 15. In the chip, an active circuit element 16 which is arranged in a semiconductor device and cooled by making refrigerant flow is formed. When the semiconductor device is operated, the thermal conductivity at the time of making the refrigerant flow in the cooling holes 22 is remarkably increased, i.e., a several tens times the thermal conductivity at the time of making the refrigerant flow along a plane surface. Since the refrigerant flows to directly come into contact with the active circuit element 16 of the semiconductor chip 15 or the like, very effective cooling can be realized.

10. 发明专利

JP2005079671A Thin film piezoelectric element and semiconductor device 审中-公开
标题翻译：薄膜压电元件和半导体器件
公开(公告)号：JP2005079671A
公开(公告)日：2005-03-24
申请号：JP2003304915
申请日：2003-08-28
申请人： Toshiba Corp , 株式会社東芝
发明人： IZEKI YUJI , KAYANO HIROYUKI , YASUMOTO YASUAKI , ABE KAZUHIDE , SANO KENYA , ITAYA KAZUHIKO , KAWAKUBO TAKASHI
IPC分类号： H01L41/09 , H01L41/08 , H03H9/02 , H03H9/17
摘要： PROBLEM TO BE SOLVED: To provide a thin film piezoelectric element which is easy in manufacturing process and handling at mounting and suppresses the semiconductor element characteristics deterioration after mounting.
SOLUTION: The thin film piezoelectric element comprises a substrate, a first porous film formed on the substrate, a thin film piezoelectric transducer disposed on the first porous film, and a second porous film formed on the thin film piezoelectric transducer to hold the piezoelectric transducer between the first and second porous films.
COPYRIGHT: (C)2005,JPO&NCIPI

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式