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1. 发明专利

JPH05301731A 失效
公开(公告)号：JPH05301731A
公开(公告)日：1993-11-16
申请号：JP12533692
申请日：1992-04-20
申请人： TOSHIBA CERAMICS CO
发明人： UESHIMA NOBUYUKI , SAITO MASAYUKI , KIMURA HARUKI , ABE SHIGERU
IPC分类号： C03B20/00 , C03B32/00 , C03C1/02 , C03C3/06 , C30B25/08 , H01L21/00 , H01L21/22
摘要： PURPOSE:To obtain a quartz glass resistant to devitrification and deformation even after the use over a long period. CONSTITUTION:A solid quartz glass is produced by melting and solidifying a natural quartz crystal. A DC voltage of 10-50kV is applied to the solid quartz glass under heating to effect the migration of alkali metals and copper in the solid quartz glass and obtain a quartz glass having alkali metal (Na, K and Li) contents of =10 poise at 1200 deg.C.

2. 发明专利

JPS6123315A Silica material for heat-treatment of semiconductor 失效
标题翻译：二氧化硅材料用于半导体热处理
公开(公告)号：JPS6123315A
公开(公告)日：1986-01-31
申请号：JP14245684
申请日：1984-07-11
申请人： Toshiba Ceramics Co Ltd
发明人： WATABE HIROYUKI , KUMAKURA MAKOTO , UESHIMA NOBUYUKI
IPC分类号： H01L21/22 , H01L21/02
摘要： PURPOSE: To obtain a high performance semiconductor element with high yield rate by trapping alkali in a heat-treatment furnace by specifying the amount of impurity of alkali metal elements such as Na, K. Li and Al contained in silica glass.
CONSTITUTION: As a silica material used in the process of heat-treatment of a semiconductor element, the material with Al more than 5ppm, with total amount of alkali metals Na, K and Li less than 2ppm, and {Li(ppm)/A
1 +Na(ppm)/A
2 +K (ppm)/A
3 }/{Al(ppm)/A
4 }≤0.5 (but A
1 , A
2 , A
3 and A
4 are atomic weights of Li, Na, K and Al respectively) is used. If the amount of Al becomes less than 5ppm and the above ratio becomes more than 0.5, the amount of Al in an activated state is decreased and can not trap alkali issued from a furnace wall and a soaking tube. If the amount of the alkali metals Na, K and Li are contained more than 2ppm, these metals move and emit from the surface of the silica glass during operation at high temperature and give affect adversely on the semiconductor element.
COPYRIGHT: (C)1986,JPO&Japio
摘要翻译：目的：通过规定在二氧化硅玻璃中含有的碱金属元素如Na，K.Li和Al的杂质的量，在热处理炉中捕获碱来获得高产率的高性能半导体元件。构成：作为半导体元件的热处理用二氧化硅材料，Al超过5ppm，碱金属Na，K和Li的总量小于2ppm，{Li（ppm）/ A1 + Na（ppm）/ A2 + K（ppm）/ A3} / {Al（ppm）/ A4} <= 0.5（但A1，A2，A3和A4分别为Li，Na，K和Al的原子量）用过的。如果Al的量变得小于5ppm且上述比例大于0.5，则活化状态的Al的量减少，并且不能捕获从炉壁和均热管发出的碱。如果碱金属Na，K和Li的含量超过2ppm，则这些金属在高温运行时从石英玻璃的表面移动并发射，并对半导体元件产生不利影响。

3. 发明专利

JPS6418927A ELECTROLYZING DEVICE 失效
公开(公告)号：JPS6418927A
公开(公告)日：1989-01-23
申请号：JP17399987
申请日：1987-07-14
申请人： TOSHIBA CERAMICS CO
发明人： UESHIMA NOBUYUKI , SASAKI YASUMI , ABE SHIGERU
IPC分类号： C03B20/00 , C03B32/00 , C03C23/00
摘要： PURPOSE:To efficiently transfer and remove impurities in a molded article and to obtain the molded article of high-purity quartz glass free from devitrification, by heating the molded article of quartz glass held between a positive and a negative electrodes in a furnace under control, impressing a DC electric source to the electrode in an inert gas atmosphere and electrolyzing. CONSTITUTION:A positive electrode 8 having an electrode plate 10 held by a supporting pipe 12 equipped with an inert gas introducing pipe 13 in a furnace 1 which is provided with heating elements 2 and 3, measures temperature by a temperature measuring means 5 equipped with a thermocouple 6 in a protecting pipe 7 and can control the temperature by a temperature regulating means 4 is opposingly set to a negative electrode 9 having an electrode plate 11 at a facing position thereof and a molded article (e.g. core pipe or crucible for pulling up single crystal) 16 of quartz glass is held between the electrodes. Then an inert gas is introduced through a feeding means 14 and a flow velocity setting means 14a from an introducing pipe 13 to the furnace 1, the molded article 16 is heated while controlling at >=1,000 deg.C, an electric current 15 is sent through a DC current source between both the electrodes 8 and 9, the molded article 16 is electrolyzed, impurities are efficiently transferred and removed to give the high-purity molded article 16.

4. 发明专利

JPS6245166B2 失效
公开(公告)号：JPS6245166B2
公开(公告)日：1987-09-25
申请号：JP9137479
申请日：1979-07-18
申请人： TOSHIBA CERAMICS CO
发明人： YAMAZAKI HIROSHI , HOSHINA KATSUMI , UESHIMA NOBUYUKI
IPC分类号： C04B35/52 , C01B31/04 , C04B41/87 , H01L21/22

5. 发明专利

JPS61131369A Fuel cell 失效
标题翻译：燃料电池
公开(公告)号：JPS61131369A
公开(公告)日：1986-06-19
申请号：JP25304984
申请日：1984-11-30
申请人： Toshiba Ceramics Co Ltd , Toshiba Chem Corp , Toshiba Corp
发明人： SEKI TOSHIAKI , TSUSHIMA MASAMITSU , KOJIMA SUSUMU , OKAWA MASAYUKI , UESHIMA NOBUYUKI , NAGATA TSUTOMU , ITO MITSUO
IPC分类号： H01M4/96
CPC分类号： H01M4/96
摘要： PURPOSE:To prevent the increase of contact resistance and the lowering of conductivity to maintain the stable performance through a long time without causing the lowering of strength and the buckling by using carbon fibers which are made high purity by the processing of chlorine gas at high temperatures as the material of electrodes with ribs. CONSTITUTION:A unit cell is constituted by laminating a matrix 1 impregnating electrolyte, electrodes 2, 3 with ribs which have flow passages 4, 5 for fluid fuel and fluid oxidizing agent and to which catalyst is added and a separator 6. Carbon fibers which are made high purity are used as the material of electrodes 2, 3 with ribs. Carbon fibers which is reduced in impurity content are obtained by raising the temperature of the carbon fibers by the use of a graphitization furnace, and blowing chlorine gas at the temperature of 1,500 deg.C, and raising the temperature of it to 2,300 deg.C to scatter and eliminate impurities as chloride. A carbon porous plate of the electrode with ribs is obtained by carrying out the hot press forming of the mixture of the obtained carbon fibers and phenol series resin, and carrying out the processing of hardening, and carrying out the processing of carbonization for the resin, and carrying out the processing of graphitization.
摘要翻译：目的：为了防止接触电阻的增加和导电性的降低，长时间保持稳定的性能，而不会通过使用通过在高温下处理氯气而制成高纯度的碳纤维而导致强度降低和翘曲作为具有肋的电极的材料。构成：单元电池通过将基体1浸渍电解质，电极2,3与具有用于流体燃料和流体氧化剂的流动通道4,5和添加有催化剂的隔离物6和隔离物6层压而构成。碳纤维使用高纯度作为具有肋的电极2,3的材料。杂质含量降低的碳纤维是通过使用石墨化炉升高碳纤维的温度，在1500℃的温度下吹入氯气，将其升温至2300℃而获得的。以氯化物分散和消除杂质。通过进行所得到的碳纤维和酚系树脂的混合物的热压成形，进行硬化处理，进行树脂的碳化处理，得到具有肋的电极的碳多孔板，并进行石墨化处理。

6. 发明专利

JPS6123314A Furnace core tube made by silica glass 失效
标题翻译：二氧化硅玻璃制成的FORENACE芯管
公开(公告)号：JPS6123314A
公开(公告)日：1986-01-31
申请号：JP14245584
申请日：1984-07-11
申请人： Toshiba Ceramics Co Ltd
发明人： AOKI MASARU , KUMAKURA MAKOTO , UESHIMA NOBUYUKI
IPC分类号： H01L21/22
摘要： PURPOSE: To obtain a furnace core tube for semiconductor heat-treatment enabled to produce a high performance semiconductor element with high yield rate by specifying the amount of impurity of alkali metal elements such as Na, K and Li which are easy to move inside the silica glass especially in high temperature.
CONSTITUTION: As a furnace core tube made by silica glass to be used for heat- treatment of semiconductor substance, a material with total amount of less than 2ppm of alkali metal impurity Na, K and Li, and with viscosity of more than 10
12 poise at 1,200°C is used. By using this material, the alkali metal elements are prevented from moving out of the silica glass and the alkali metals issued from a soaking tube or a furnace wall can be trapped inside the silica glass, thus the production yield rate of semiconductor elements can be increased.
COPYRIGHT: (C)1986,JPO&Japio
摘要翻译：目的：获得半导体热处理炉芯管，能够通过规定容易在二氧化硅内移动的Na，K和Li等碱金属元素的杂质量，以高产率制造高性能半导体元件玻璃特别是在高温下。构成：作为用于半导体物质的热处理的石英玻璃制成的炉芯管，总量小于2ppm的碱金属杂质Na，K和Li，粘度大于10 <12的材料 >使用1,200度的poise。通过使用这种材料，可以防止碱金属元素从石英玻璃中移出，并且可以将由均热管或炉壁产生的碱金属捕获在石英玻璃内部，从而可以提高半导体元件的生产率。

7. 发明专利

JPS5637296A EPITAXIALLY GROWING APPARATUS 失效
公开(公告)号：JPS5637296A
公开(公告)日：1981-04-10
申请号：JP11398079
申请日：1979-09-05
申请人： TOSHIBA CERAMICS CO
发明人： YAMAZAKI TAKU , HOSHINA TAKEMI , UESHIMA NOBUYUKI
IPC分类号： C30B23/02 , H01L21/203 , H01L21/205
摘要： PURPOSE:To accurately adjust the flow of a vapor-depositing gas with the titled apparatus by forming a surface layer of a gas flow adjusting guide and a susceptor with the same material, placing the guide near the susceptor, and improving the form, etc. of the guide. CONSTITUTION:Susceptor 3 is made of silicon carbide, and gas flow adjusting guide 10 is artificial graphite substrate 13 with silicon carbide film 12 covered on the exposed surface. A plurality of waters 9...9 are set on the side wall of barrel type susceptor 3, and by supplying an electric current to high frequency induction coil 8, susceptor 3 made of silicon carbide generates heat to heat wafers 9 on susceptor 3. While rotating susceptor 3 with shaft 4, a predetermined amount of silicon gas is then fed from gas spouting surface 16 of circular vapor-depositing gas introducing member 15. Since arched guide 10 has been attached to the top of susceptor 3 opposite to spouting surface 16, the silicon gas is uniformly supplied to all of the wafers.

8. 发明专利

JPH0616494A QUARTZ GLASS CRUCIBLE AND ITS PRODUCTION 失效
公开(公告)号：JPH0616494A
公开(公告)日：1994-01-25
申请号：JP1781791
申请日：1991-02-08
申请人： TOSHIBA CERAMICS CO
发明人： WATABE HIROYUKI , ABE SHIGERU , UESHIMA NOBUYUKI
IPC分类号： C03C3/06 , C03B19/09 , C03B20/00 , C04B41/91 , C30B15/10
摘要： PURPOSE:To provide the crucible for production of a high-quality silicon single crystal by consisting the crucible of a quartz glass with a natural rock crystal as the raw material, confirming the contents of Na, NLi and Cu to prescribed values or below and specifying the viscosity and electric resistance thereof to prescribed values or above. CONSTITUTION:The natural rock crystal is pulverized and adjusted to 50 to 80# and is refined by a flotation method. The refined powder is molded by arc rotational melting to form the quartz crucible. An electrolysis is then effected >=5 minutes by impressing a high voltage of about 10KV above this crucuble to migrate the alkaline metals and copper in a furnace at about 1300 deg.C, by which the contents of the alkaline metals Na, k and Li are reduced respectively to =10 poises and the electric resistance at 1200 deg.C to >=1.4X10 OMEGAm. The convection of molten silicon is controllable of the electric resistance is high in such a case and, therefore, the erosion quantity on the inside surface of the crucible decreases and the quantity of the oxygen to be dissolved in the crucible is decreased. The alkaline metals are not migrated and the contents thereof are decreased.

9. 发明专利

JPH0571293B2 失效
公开(公告)号：JPH0571293B2
公开(公告)日：1993-10-06
申请号：JP3501486
申请日：1986-02-21
申请人： TOSHIBA CERAMICS CO
发明人： UESHIMA NOBUYUKI , SASAKI YASUMI
IPC分类号： B01J19/00 , B01J19/24 , H01L21/22 , C30B31/10

10. 发明专利

JPS646158B2 失效
公开(公告)号：JPS646158B2
公开(公告)日：1989-02-02
申请号：JP25185683
申请日：1983-12-26
申请人： TOSHIBA CERAMICS CO
发明人： WATABE HIROYUKI , ABE SHIGERU , UESHIMA NOBUYUKI
IPC分类号： C03B20/00 , C03C3/06 , C30B15/10

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