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1. 发明申请

WO2004051380A8 METHOD FOR FORMING RESIST PATTERN AND RESIST PATTERN 审中-公开
标题翻译：形成电阻图案和电阻图案的方法
公开(公告)号：WO2004051380A8
公开(公告)日：2004-11-25
申请号：PCT/JP0315427
申请日：2003-12-02
申请人： TOKYO OHKA KOGYO CO LTD , HITACHI SCIENCE SYSTEMS LTD , HITACHI HIGH TECH CORP , KUBOTA NAOTAKA , ISHIKAWA KIYOSHI , SATO MITSURU , MATSUMIYA TASUKU , FUJII KAZUHIRO , SATO KENICHI
发明人： KUBOTA NAOTAKA , ISHIKAWA KIYOSHI , SATO MITSURU , MATSUMIYA TASUKU , FUJII KAZUHIRO , SATO KENICHI
IPC分类号： G03F7/039 , G03F7/30 , G03F7/32 , G03F7/40 , H01L21/027
CPC分类号： G03F7/32 , G03F7/0397 , G03F7/40
摘要： A method for forming a resist pattern, which comprises a step of applying a positive resist composition comprising a resin component (A) containing an alkali-soluble unit in an mount less than 20 mol % and having an acid-dissociative group inhibiting the dissolution thereof in an alkali and thus exhibiting the enhancement in the solubility in an alkaline solution by the action of an acid, a component (B) generating an acid by the exposure to a light, and an organic solvent (C) capable of dissolving (A) and (B) components on a substrate, steps of pre-baking, selective exposure, heating after exposure, and an alkali development, a replacement step of at least once replacing a liquid present on the substrate at least once with a liquid for replacement and replacing the liquid for replacement with a liquid for the critical drying, and then a drying step of drying the liquid for the critical drying through a critical state. The method can be employed, in a process of forming a resist pattern, for preventing a fine resist pattern from falling down in a drying step after developing.
摘要翻译：一种形成抗蚀剂图案的方法，其包括将包含含有碱溶性单元的树脂组分（A）的正性抗蚀剂组合物涂布在小于20mol％的载体中并具有抑制其溶解的酸解离基团的步骤在碱中，因此通过酸，通过曝光产生酸的组分（B）和能够溶解（A）的有机溶剂（C）表现出在碱性溶液中的溶解度增强，和（B）基材上的组分，预烘焙，选择性曝光，曝光后加热和碱显影的步骤，至少一次用待更换的液体代替基板上存在的液体至少一次的更换步骤; 用用于临界干燥的液体替换用于替换的液体，然后进行干燥步骤，以将临界干燥的液体干燥至临界状态。在形成抗蚀剂图案的过程中，可以采用该方法，以防止在显影之后的干燥步骤中精细的抗蚀剂图案掉落。

2. 发明专利

AU2003289125A8 Method for forming resist pattern and resist pattern 未知
公开(公告)号：AU2003289125A8
公开(公告)日：2004-06-23
申请号：AU2003289125
申请日：2003-12-02
申请人： HITACHI SCIENCE SYSTEMS LTD , HITACHI HIGH TECH CORP , TOKYO OHKA KOGYO CO LTD
发明人： FUJII KAZUHIRO , SATO KENICHI , KUBOTA NAOTAKA , ISHIKAWA KIYOSHI , SATO MITSURU , MATSUMIYA TASUKU
IPC分类号： G03F7/039 , G03F7/30 , G03F7/32 , G03F7/40 , H01L21/027
摘要： A resist pattern forming method which can prevent a fine resist pattern from collapsing in a drying step after a development treatment in case of forming a resist pattern is provided. This method comprises applying a positive resist composition comprising a resin component (A), which has an alkali-soluble unit content of less than 20 mol % and also has an acid dissociable dissolution inhibiting group, alkali solubility thereof being enhanced by action of acid, an acid generator component (B) which generates an acid under exposure, and an organic solvent (C) which dissolves the components (A) and (B) on a substrate; subjecting the resulting film to prebaking, selective exposure, post exposure baking and alkali development; performing a displacing step of displacing a liquid existing on the substrate with a displacing liquid at least one time; displacing the displacing liquid with a liquid for critical drying; and performing a drying step of drying the liquid for critical drying via a critical state.

3. 发明专利

DE69710692T2 未知
公开(公告)号：DE69710692T2
公开(公告)日：2002-08-29
申请号：DE69710692
申请日：1997-12-10
申请人： TOKYO OHKA KOGYO CO LTD
发明人： SATO MITSURU , ISHIKAWA KIYOSHI , SUGETA YOSHIKI , YAMAZAKI HIROYUKI , TACHIKAWA TOSHIKAZU , KOMANO HIROSHI
IPC分类号： G03F7/004 , G03F7/038 , H01L21/027

4. 发明专利

AT532103T 未知
公开(公告)号：AT532103T
公开(公告)日：2011-11-15
申请号：AT05111460
申请日：2004-01-27
申请人： TOKYO OHKA KOGYO CO LTD
发明人： HIRAYAMA TAKU , YAMADA TOMOTAKA , TAKAYAMA TOSHIKAZU , YOSHIDA MASAAKI , HADA HIDEO , FUJIMURA SATOSHI , IWAI TAKESHI , SATO MITSURU , TAKASU RYOICHI , TACHIKAWA TOSHIKAZU , IWASHITA JUN , ISHIDUKA KEITA
IPC分类号： G03F7/20 , G03C1/76 , G03F7/004 , G03F7/038 , G03F7/039 , G03F7/26 , H01L21/027
摘要： A resist composition which is stable relative to solvents used in immersion lithography processes and displays excellent sensitivity and resist pattern profile, and a method of forming a resist pattern that uses such a resist composition are provided. The resist composition is in accordance with predetermined parameters, or is a positive resist composition comprising a resin component (A) which contains an acid dissociable, dissolution inhibiting group and displays increased alkali solubility under the action of acid, an acid generator component (B), and an organic solvent (C), wherein the component (A) contains a structural unit (a1) derived from a (meth)acrylate ester containing an acid dissociable, dissolution inhibiting group, but contains no structural units (a0), including structural units (a0-1) containing an anhydride of a dicarboxylic acid and structural units (a0-2) containing a phenolic hydroxyl group.

5. 发明专利

HK1002463A1 CHEMICAL-SENSITIZATION RESIST COMPOSITION 未知
公开(公告)号：HK1002463A1
公开(公告)日：1998-08-28
申请号：HK98101451
申请日：1998-02-25
申请人： TOKYO OHKA KOGYO CO LTD
发明人： OOMORI KATSUMI , HADA HIDEO , KANEKO FUMITAKE , SATO MITSURU , SATO KAZUFUMI , NAKAYAMA TOSHIMASA
IPC分类号： G03F7/004 , G03F7/038 , G03F7/039 , H01L21/027 , G03F
摘要： A novel chemical-sensitization resist composition capable of giving a positively or negatively patterned resist layer of excellent pattern resolution and cross sectional profile of the patterned resist layer with high sensitivity is characteristically formulated, as combined with a resinous ingredient which is subject to changes in solubility behavior in an alkaline developer solution by interaction with an acid, with a specific oximesulfonate compound as the radiation-sensitive acid-generating agent represented by the general formula R -C(CN)=N-O-SO2-R , in which R is an inert organic group and R is an unsubstituted or substituted polycyclic monovalent hydrocarbon group selected from polycyclic aromatic hydrocarbon groups such as naphthyl and polycyclic nonaromatic hydrocarbon groups such as a terpene or camphor residue.

6. 发明专利

AU2003302653A1 POLYMER COMPOUND, RESIST COMPOSITION AND DISSOLUTION INHIBITOR AGENT CONTAINING THE POLYMER COMPOUND 未知
公开(公告)号：AU2003302653A1
公开(公告)日：2004-06-23
申请号：AU2003302653
申请日：2003-11-28
申请人： TOKYO OHKA KOGYO CO LTD
发明人： SATO MITSURU , OGATA TOSHIYUKI , ENDO KOTARO , TSUJI HIROMITSU , YOSHIDA MASAAKI , HADA HIDEO , TAKASU RYOICHI
IPC分类号： C08F16/24 , C08F20/22 , G03F7/004 , G03F7/039 , H01L21/027 , C08F16/12

7. 发明专利

AU2003289123A1 POSITIVE RESIST COMPOSITION 未知
公开(公告)号：AU2003289123A1
公开(公告)日：2004-06-23
申请号：AU2003289123
申请日：2003-12-01
申请人： TOKYO OHKA KOGYO CO LTD
发明人： KUBOTA NAOTAKA , ISHIKAWA KIYOSHI , SATO MITSURU , MATSUMIYA TASUKU
IPC分类号： G03F7/039 , G03F7/32 , G03F7/40 , H01L21/027 , G03F7/004
摘要： There is provided a positive resist composition which, during resist pattern formation, can prevent the collapse of very fine resist patterns during the drying step following developing. This positive resist composition is used in a resist pattern formation method comprising a step, within the lithography process, for substituting a liquid remaining on the substrate following alkali developing with a critical drying liquid, and then drying this critical drying liquid by causing passage through a critical state. The positive resist composition comprises a resin component (A), which has an alkali-soluble unit content of less than 20 mol %, contains an acid dissociable, dissolution inhibiting group, and displays increased alkali solubility under action of acid, an acid generator component (B) that generates acid on exposure, and an organic solvent (C) for dissolving the components (A) and (B), and moreover, the component (A) comprises a structural unit (a1) containing an acid dissociable, dissolution inhibiting group, a structural unit (a2) containing a lactone unit, and a structural unit (a3) containing a polycyclic group with an alcoholic hydroxyl group.

8. 发明专利

DE69702422T2 未知
公开(公告)号：DE69702422T2
公开(公告)日：2000-12-14
申请号：DE69702422
申请日：1997-04-18
申请人： TOKYO OHKA KOGYO CO LTD
发明人： SATO MITSURU , OOMORI KATSUMI , IGUCHI ETSUKO , ISHIKAWA KIYOSHI , KANEKO FUMITAKE
IPC分类号： C09K3/00 , G03F7/11 , G03F7/09 , H01L21/027
摘要： Proposed is a novel undercoating composition to form an undercoating layer interposed between the surface of a substrate and a photoresist layer with an object to decrease the adverse influences by the reflection of light on the substrate surface in the pattern-wise exposure of the photoresist layer to ultraviolet light without the undesirable phenomena of intermixing between layers and notching along with a large selectivity ratio in the etching rates between the patterned resist layer and the undercoating layer in a dry-etching treatment. The undercoating composition comprises (A) an ultraviolet absorber which is a benzophenone compound or an aromatic azomethine compound each having at least one unsubstituted or alkyl-substituted amino group on the aryl groups and (B) a crosslinking agent which is preferably a melamine compound having at least two methylol groups or alkoxymethyl groups bonded to the nitrogen atoms in a molecule in a weight proportion (A):(B) in the range from 1:1 to 1:10.

9. 发明专利

DE69500131T2 未知
公开(公告)号：DE69500131T2
公开(公告)日：1997-07-31
申请号：DE69500131
申请日：1995-04-25
申请人： TOKYO OHKA KOGYO CO LTD
发明人： SATO MITSURU , NITTA KAZUYUKI , YAMAZAKI AKIYOSHI , IGUCHI ETSUKO , SAKAI YOSHIKA , SATO KAZUFUMI , NAKAYAMA TOSHIMASA
IPC分类号： G03F7/004 , G03F7/039
摘要： Disclosed is an improved, chemically-amplifying positive resist composition for radiations, especially UV rays, deep-UV rays, excimer laser beams, X-rays, electron beams. The composition comprises (A) a resin component whose solubility in an alkaline aqueous solution is increased by the action of acids, (B) a compound which generates an acid when exposed to radiations, in which said component (A) is a mixture comprising (a) a polyhydroxystyrene where from 10 to 60 mol% of the hydroxyl groups have been substituted by tert-butoxycarbonyloxy groups and (b) a polyhydroxystyrene where from 10 to 60 mol% of the hydroxyl groups have been substituted by residues of a general formula (I): wherein R is a hydrogen atom or a methyl group, R is a methyl group or an ethyl group, and R is a lower alkyl group having 1 to 4 carbon atoms ; or comprises component (A), component (B) and additionally (C) an organic carboxylic acid compound. The composition has a high sensitivity, a high resolution and high heat resistance. In particular, the composition comprising components (A), (B) and (C) has good post-exposure storage stability and gives resist patterns with good profiles, without depending on the substrate to which it is applied. The composition is useful for forming fine patterns in producing ultra-LSIs.

10. 发明专利

DE69500131D1 未知
公开(公告)号：DE69500131D1
公开(公告)日：1997-02-27
申请号：DE69500131
申请日：1995-04-25
申请人： TOKYO OHKA KOGYO CO LTD
发明人： SATO MITSURU , NITTA KAZUYUKI , YAMAZAKI AKIYOSHI , IGUCHI ETSUKO , SAKAI YOSHIKA , SATO KAZUFUMI , NAKAYAMA TOSHIMASA
IPC分类号： G03F7/004 , G03F7/039
摘要： Disclosed is an improved, chemically-amplifying positive resist composition for radiations, especially UV rays, deep-UV rays, excimer laser beams, X-rays, electron beams. The composition comprises (A) a resin component whose solubility in an alkaline aqueous solution is increased by the action of acids, (B) a compound which generates an acid when exposed to radiations, in which said component (A) is a mixture comprising (a) a polyhydroxystyrene where from 10 to 60 mol% of the hydroxyl groups have been substituted by tert-butoxycarbonyloxy groups and (b) a polyhydroxystyrene where from 10 to 60 mol% of the hydroxyl groups have been substituted by residues of a general formula (I): wherein R is a hydrogen atom or a methyl group, R is a methyl group or an ethyl group, and R is a lower alkyl group having 1 to 4 carbon atoms ; or comprises component (A), component (B) and additionally (C) an organic carboxylic acid compound. The composition has a high sensitivity, a high resolution and high heat resistance. In particular, the composition comprising components (A), (B) and (C) has good post-exposure storage stability and gives resist patterns with good profiles, without depending on the substrate to which it is applied. The composition is useful for forming fine patterns in producing ultra-LSIs.

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