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1. 发明申请

WO2004069959A3 PROCESS FOR REFINING CRUDE RESIN FOR RESIST 审中-公开
标题翻译：炼油用原油的抗氧化工艺
公开(公告)号：WO2004069959A3
公开(公告)日：2004-12-09
申请号：PCT/JP2004000807
申请日：2004-01-29
申请人： TOKYO OHKA KOGYO CO LTD , HADA HIDEO , IWAI TAKESHI , MIYAIRI MIWA , MUROI MASAAKI , ATSUCHI KOTA , TOMIDA HIROAKI
发明人： HADA HIDEO , IWAI TAKESHI , MIYAIRI MIWA , MUROI MASAAKI , ATSUCHI KOTA , TOMIDA HIROAKI
IPC分类号： G03F7/039 , C08F6/06 , C08F6/12 , C08F220/28 , C10G20060101 , G03F7/26
CPC分类号： G03F7/0397 , C08F6/06 , C08F6/12
摘要： A process for refining a crude resin for a resist is provided, which is capable of effectively removing by-products such as polymers and oligomers contained within the crude resin. The process provides a refining process for the crude resin of a resist resin (A) used in a photoresist composition comprising at least the resist resin (A) and an acide generator (B) dissolved in a first organic solvent (C1), wherein if the concentration of the component (A) in the photoresist composition is labeled X, and the crude resin concentration of the component (A) in a crude resin solution comprising the crude resin of the component (A) dissolved in a second organic solvent (C2) is labeled Y, then (i) the crude resin solution is prepared so that Y is smaller than X, and (ii) the crude resin solution is subsequently filtered.
摘要翻译：提供了一种精制抗蚀剂用粗制树脂的方法，其能够有效地除去粗树脂中所含的聚合物和低聚物等副产物。该方法提供了用于至少包含抗蚀剂树脂（A）和溶解在第一有机溶剂（C1）中的酸产生剂（B）的光致抗蚀剂组合物中的抗蚀剂树脂（A）的粗树脂的精制方法，其中如果（A）的粗树脂溶液中的组分（A）的粗树脂浓度溶解于第二有机溶剂（C2）中，该组分（A）的粗树脂浓度被标记为X，）标记为Y，则（i）制备粗树脂溶液，使得Y小于X，并且（ii）随后过滤粗树脂溶液。

2. 发明申请

WO2004067688A3 PROCESS FOR REFINING CRUDE RESIN FOR ELECTRONIC MATERIAL 审中-公开
标题翻译：电子材料精制树脂精制工艺
公开(公告)号：WO2004067688A3
公开(公告)日：2004-10-28
申请号：PCT/JP2004000776
申请日：2004-01-28
申请人： TOKYO OHKA KOGYO CO LTD , HADA HIDEO , IWAI TAKESHI , TAKESHITA MASARU , HAYASHI RYOTARO , MUROI MASAAKI , ATSUCHI KOTA , TOMIDA HIROAKI , SHIOTANI KAZUYUKI
发明人： HADA HIDEO , IWAI TAKESHI , TAKESHITA MASARU , HAYASHI RYOTARO , MUROI MASAAKI , ATSUCHI KOTA , TOMIDA HIROAKI , SHIOTANI KAZUYUKI
IPC分类号： C08F6/06 , C08F220/28 , C08J3/14 , C11B20060101 , G03F7/039 , G03F7/26
CPC分类号： C08J3/14 , C08J2333/04 , G03F7/0397
摘要： A process is provided for effectively removing by-products such as oligomers contained within a crude resin for an electronic material, thus producing a resin for an electronic material. In this process, a crude resin for an electronic material containing (al) structural units derived from a (meth)acrylate ester with a hydrophilic site is washed using (b1) an organic solvent which is capable of dissolving said crude resin for an electronic material and which separates into two layers when combined with water, and (b2) water.
摘要翻译：提供了一种方法，用于有效地除去副产物，例如包含在用于电子材料的粗树脂中的低聚物，从而制备用于电子材料的树脂。在该方法中，使用（b1）能够将所述粗树脂溶解在电子材料中的有机溶剂洗涤含有（a1）来自具有亲水部位的（甲基）丙烯酸酯的结构单元的电子材料用粗树脂当与水结合时分离成两层，（b2）水。

3. 发明申请

WO2004050728A3 METHOD OF PRODUCING (METH) ACRYLIC ACID DERIVATIVE POLYMER FOR RESIST 审中-公开
标题翻译：（甲基）丙烯酸衍生聚合物的制备方法
公开(公告)号：WO2004050728A3
公开(公告)日：2004-09-30
申请号：PCT/JP0315348
申请日：2003-12-01
申请人： TOKYO OHKA KOGYO CO LTD , KUBOTA NAOTAKA , IWAI TAKESHI , HADA HIDEO
发明人： KUBOTA NAOTAKA , IWAI TAKESHI , HADA HIDEO
IPC分类号： C08F220/10 , C08F220/18 , C08F220/28 , G03F7/027 , G03F7/039 , H01L21/027 , C08F220/00
CPC分类号： G03F7/0397 , C08F220/10 , Y10T428/31935
摘要： There is provided a photoresist composition capable of forming a resist pattern with minimal LER, and a method of forming a resist pattern. This method is a method of producing a (meth)acrylic acid derivative polymer for use as a resist by radical polymerization of a monomer mixture comprising (al) a (meth)acrylate ester with an acid dissociable, dissolution inhibiting group, and (a2) a (meth)acrylate ester with a lactone unit, wherein (al) and (a2) utilize compounds such that when each compound (al) and (a2) is individually subjected to homopolymerization, under identical conditions to the radical polymerization, and a residual monomer ratio is determined 10 minutes after the start of the homopolymerization, the difference between the minimum residual monomer ratio and the maximum residual monomer ratio is no more than 15 mol%.
摘要翻译：提供能够以最小的LER形成抗蚀剂图案的光致抗蚀剂组合物和形成抗蚀剂图案的方法。该方法是通过自由基聚合制备（甲基）丙烯酸衍生物聚合物的方法，所述单体混合物包含（a1）（甲基）丙烯酸酯与酸解离的溶解抑制基团和（a2）具有内酯单元的（甲基）丙烯酸酯酯，其中（a1）和（a2）利用化合物，使得当在相同的条件下使各化合物（a1）和（a2）分别进行均聚时，在均聚开始10分钟后确定单体比例，最小残留单体比和最大残留单体比之差不大于15摩尔％。

4. 发明申请

WO2004051372A3 METHOD OF FORMING RESIST PATTERN, POSITIVE RESIST COMPOSITION, AND LAYERED PRODUCT 审中-公开
标题翻译：形成电阻图案，阳性电阻组合物和层状产品的方法
公开(公告)号：WO2004051372A3
公开(公告)日：2005-10-06
申请号：PCT/JP0315347
申请日：2003-12-01
申请人： TOKYO OHKA KOGYO CO LTD , HADA HIDEO , MIYAIRI MIWA , KUBOTA NAOTAKA , IWAI TAKESHI
发明人： HADA HIDEO , MIYAIRI MIWA , KUBOTA NAOTAKA , IWAI TAKESHI
IPC分类号： G03F7/039 , G03F7/40 , H01L21/027 , G03F7/00
CPC分类号： G03F7/40 , G03F7/0392 , G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： There are provided a method of forming a resist pattern that enables the resist pattern to be formed with good control of the pattern size, as well as a positive resist composition used in the method, and a layered product formed using the positive resist composition. In the above method a positive resist composition comprising a resin component (A), which contains a structural unit (al) derived from a (meth)acrylate ester represented by a general formula (I) shown below, and displays increased alkali solubility under action of acid, and an acid generator component (B) that generates acid on exposure is applied to a substrate, a prebake is conducted, the resist composition is selectively exposed, post exposure baking (PEB) is conducted, alkali developing is then used to form a resist pattern, and the pattern size of the thus produced resist pattern is then narrowed by heat treatment.
摘要翻译：提供一种形成抗蚀剂图案的方法，其能够形成对图案尺寸的良好控制，以及该方法中使用的正性抗蚀剂组合物和使用正性抗蚀剂组合物形成的层叠体。在上述方法中，含有含有由下述通式（I）表示的（甲基）丙烯酸酯衍生的结构单元（a1））的树脂成分（A）的正型抗蚀剂组合物在作用下显示出增加的碱溶解性的酸，并且在基材上产生酸的酸发生剂组分（B）施加到基材上，进行预烘烤，选择性地暴露抗蚀剂组合物，进行曝光后烘烤（PEB），然后用碱显影形成抗蚀剂图案，然后通过热处理使由此制得的抗蚀剂图案的图案尺寸变窄。

5. 发明授权

US6444397B2 Negative-working photoresist composition 失效
标题翻译：负性光刻胶组合物
公开(公告)号：US6444397B2
公开(公告)日：2002-09-03
申请号：US86553001
申请日：2001-05-29
申请人： TOKYO OHKA KOGYO CO LTD
发明人： HADA HIDEO , IWAI TAKESHI , FUJIMURA SATOSHI
IPC分类号： H01L21/027 , G03F7/004 , G03F7/033 , G03F7/038 , G03F7/039
CPC分类号： G03F7/0382 , Y10S430/106 , Y10S430/111
摘要： Disclosed is a chemical-amplification negative-working photoresist composition used for photolithographic patterning in the manufacture of semiconductor devices suitable for patterning light-exposure to ArF excimer laser beams and capable of giving a high-resolution patterned resist layer free from swelling and having an orthogonal cross sectional profile by alkali-development. The characteristic ingredient of the composition is the resinous compound which has two types of functional groups, e.g., hydroxyalkyl groups and carboxyl or carboxylate ester groups, capable of reacting each with the other to form intramolecular and/or intermolecular ester linkages in the presence of an acid released from the radiation-sensitive acid generating agent to cause insolubilization of the resinous ingredient in an aqueous alkaline developer solution.
摘要翻译：公开了用于光刻图案化的化学放大负性光致抗蚀剂组合物，用于制造适于图案化曝光于ArF准分子激光束的半导体器件，并且能够提供没有溶胀的高分辨率图案化抗蚀剂层并且具有正交通过碱显影的截面剖面。组合物的特征成分是具有两种官能团的树脂化合物，例如羟基烷基和羧基或羧酸酯基团，其能够在存在下形成分子间和/或分子间酯键，以形成分子内和/或分子间酯键从辐射敏感的酸产生剂中释放的酸引起树脂成分在碱性显影剂水溶液中的不溶化。

6. 发明专利

AT433468T 未知
公开(公告)号：AT433468T
公开(公告)日：2009-06-15
申请号：AT05765320
申请日：2005-07-01
申请人： TOKYO OHKA KOGYO CO LTD
发明人： MATSUMARU SHOGO , TAKESHITA MASARU , IWAI TAKESHI , HADA HIDEO
IPC分类号： C08F220/38 , C08F220/22 , G03F7/039 , H01L21/027
摘要： The invention provides a polymer compound capable of forming a positive resist composition that can form a high-resolution pattern with a reduced level of LER, an acid generator formed from such a polymer compound, a positive resist composition that includes such a polymer compound, and a method for forming a resist pattern that uses such a positive resist composition. The polymer compound includes a structural unit (a1) derived from an (±-lower alkyl) acrylate ester having an acid-dissociable, dissolution-inhibiting group, a structural unit (a2) represented by a general formula (a2-1) shown below [wherein, R represents a hydrogen atom or a lower alkyl group; A represents a divalent organic group; B represents a monovalent organic group; X represents a sulfur atom or iodine atom; n represents either 1 or 2; and Y represents a straight-chain, branched or cyclic alkyl group in which at least one hydrogen atom may be substituted with a fluorine atom], and a structural unit (a3) derived from an (±-lower alkyl) acrylate ester that contains a polar group-containing aliphatic polycyclic group.

7. 发明专利

DE60327102D1 未知
公开(公告)号：DE60327102D1
公开(公告)日：2009-05-20
申请号：DE60327102
申请日：2003-12-01
申请人： TOKYO OHKA KOGYO CO LTD
发明人： HADA HIDEO , MIYAIRI MIWA , KUBOTA NAOTAKA , IWAI TAKESHI
IPC分类号： G03F7/00 , G03F7/039 , G03F7/40 , H01L21/027
摘要： There are provided a method of forming a resist pattern that enables the resist pattern to be formed with good control of the pattern size, as well as a positive resist composition used in the method, and a layered product formed using the positive resist composition. In the above method a positive resist composition comprising a resin component (A), which contains a structural unit (a1) derived from a (meth)acrylate ester represented by a general formula (I) shown below, and displays increased alkali solubility under action of acid, and an acid generator component (B) that generates acid on exposure is applied to a substrate, a prebake is conducted, the resist composition is selectively exposed, post exposure baking (PEB) is conducted, alkali developing is then used to form a resist pattern, and the pattern size of the thus produced resist pattern is then narrowed by heat treatment.

8. 发明专利

AU2003288549A1 METHOD OF FORMING RESIST PATTERN, POSITIVE RESIST COMPOSITION, AND LAYERED PRODUCT 未知
公开(公告)号：AU2003288549A1
公开(公告)日：2004-06-23
申请号：AU2003288549
申请日：2003-12-01
申请人： TOKYO OHKA KOGYO CO LTD
发明人： HADA HIDEO , MIYAIRI MIWA , KUBOTA NAOTAKA , IWAI TAKESHI
IPC分类号： G03F7/039 , G03F7/40 , H01L21/027 , G03F7/00
摘要： There are provided a method of forming a resist pattern that enables the resist pattern to be formed with good control of the pattern size, as well as a positive resist composition used in the method, and a layered product formed using the positive resist composition. In the above method a positive resist composition comprising a resin component (A), which contains a structural unit (a1) derived from a (meth)acrylate ester represented by a general formula (I) shown below, and displays increased alkali solubility under action of acid, and an acid generator component (B) that generates acid on exposure is applied to a substrate, a prebake is conducted, the resist composition is selectively exposed, post exposure baking (PEB) is conducted, alkali developing is then used to form a resist pattern, and the pattern size of the thus produced resist pattern is then narrowed by heat treatment.

9. 发明专利

DE69622249D1 未知
公开(公告)号：DE69622249D1
公开(公告)日：2002-08-14
申请号：DE69622249
申请日：1996-12-12
申请人： TOKYO OHKA KOGYO CO LTD
发明人： HADA HIDEO , YAMAZAKI HIROYUKI , SUGETA YOSHIKI , KOMANO HIROSHI , ISHIKAWA KIYOSHI
IPC分类号： C09K3/00 , G03F7/004 , G03F7/033 , G03F7/038 , G03F7/039 , H01L21/027
摘要： Novel high-sensitivity positive- and negative-working chemical-sensitization photoresist compositions capable of giving a highly heat-resistant patterned resist layer of high resolution having excellent orthogonal cross sectional profile without being influenced by standing waves, contain as an acid generating agent by irradiation with actinic rays, a specific cyano-substituted oximesulfonate compound such as alpha -(methylsulfonyloxyimino)-4-methoxybenzyl cyanide. The advantages obtained by the use of this specific acid-generating agent are remarkable when the film-forming resinous ingredient has a molecular weight distribution such that the ratio of the weight-average molecular weight to the number-average molecular weight does not exceed 3.5.

10. 发明专利

DE60238438D1 POSITIV-RESISTZUSAMMENSETZUNG UND VERFAHREN ZUR AUSBILDUNG EINER RESISTSTRUKTUR 未知
公开(公告)号：DE60238438D1
公开(公告)日：2011-01-05
申请号：DE60238438
申请日：2002-11-29
申请人： TOKYO OHKA KOGYO CO LTD
发明人： IWAI TAKESHI , KUBOTA NAOTAKA , FUJIMURA SATOSHI , HADA HIDEO
IPC分类号： G03F7/039 , C08F220/18 , C08F220/28 , H01L21/027

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