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1. 发明专利

AU2003302653A1 POLYMER COMPOUND, RESIST COMPOSITION AND DISSOLUTION INHIBITOR AGENT CONTAINING THE POLYMER COMPOUND 未知
公开(公告)号：AU2003302653A1
公开(公告)日：2004-06-23
申请号：AU2003302653
申请日：2003-11-28
申请人： TOKYO OHKA KOGYO CO LTD
发明人： SATO MITSURU , OGATA TOSHIYUKI , ENDO KOTARO , TSUJI HIROMITSU , YOSHIDA MASAAKI , HADA HIDEO , TAKASU RYOICHI
IPC分类号： C08F16/24 , C08F20/22 , G03F7/004 , G03F7/039 , H01L21/027 , C08F16/12

2. 发明公开

EP1830227A4 RESIST COMPOSITION FOR LIQUID IMMERSION EXPOSURE AND METHOD FOR RESIST PATTERN FORMATION 审中-公开
标题翻译：抗蚀剂组合物液浸曝光和方法抗蚀剂结构生产
公开(公告)号：EP1830227A4
公开(公告)日：2008-12-31
申请号：EP05811760
申请日：2005-12-01
申请人： TOKYO OHKA KOGYO CO LTD
发明人： MATSUMARU SHOGO , TSUJI HIROMITSU
IPC分类号： G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/2041
摘要： This invention provides a resist composition for liquid immersion exposure, comprising a resin component (A) which undergoes a change in alkali solubility through the action of an acid. The resin component (A) comprises a polymeric compound (A1) comprising constitutional units (a0) containing an acid generating group which generates an acid upon exposure to a radiation.

3. 发明公开

EP1610178A4 RESIST COMPOSITION FOR LIQUID IMMERSION EXPOSURE PROCESS AND METHOD OF FORMING RESIST PATTERN THEREWITH 审中-公开
标题翻译：抗蚀剂组合物液浸曝光过程和方法形成抗蚀该结构
公开(公告)号：EP1610178A4
公开(公告)日：2010-01-27
申请号：EP04722980
申请日：2004-03-24
申请人： TOKYO OHKA KOGYO CO LTD
发明人： ENDO KOTARO , YOSHIDA MASAAKI , HIRAYAMA TAKU , TSUJI HIROMITSU , OGATA TOSHIYUKI , SATO MITSURU
IPC分类号： G03F7/004 , G03F7/038 , G03F7/039 , G03F7/11 , G03F7/20 , G03F7/26 , H01L21/027
CPC分类号： G03F7/0395 , G03F7/0046 , G03F7/0382 , G03F7/2041 , Y10S430/106 , Y10S430/108 , Y10S430/115

4. 发明专利

JP2005173463A Photoresist composition and resist pattern forming method 审中-公开
标题翻译：光电组合物和电阻图案形成方法
公开(公告)号：JP2005173463A
公开(公告)日：2005-06-30
申请号：JP2003416559
申请日：2003-12-15
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： TSUJI HIROMITSU , ENDO KOUTARO
IPC分类号： G03F7/004 , G03F7/033 , G03F7/039 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a photoresist composition which improves the shape of a resist pattern, that is, rectangularity and line edge roughness while retaining high resolution.
SOLUTION: The photoresist composition contains (A) a polymer component including an alkali-soluble constitutional unit having an alicyclic group having both (i) a fluorine atom or a fluoroalkyl group and (ii) an alcoholic hydroxyl group, and having alkali solubility changed by the action of an acid; and (B) an acid generator component which generates an acid when it receives exposure light, and contains at least (B-1) an onium salt including a linear-fluoroalkylsulfonic acid ion as an anion moiety and (B-2) an onium salt including a sulfonic acid ion having a fluorine-unsubstituted heterocycle as an anion moiety.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供改善抗蚀剂图案的形状的光致抗蚀剂组合物，即保持高分辨率的矩形性和线边缘粗糙度。光致抗蚀剂组合物含有（A）包含具有具有（i）氟原子或氟代烷基和（ii）醇羟基的脂环族基团的碱溶性结构单元的聚合物组分，并且具有碱溶解度因酸的作用而改变; （B）含有至少（B-1）含有直链 - 氟烷基磺酸离子作为阴离子部分的鎓盐和（B-2）鎓盐的酸性发生剂成分，包括具有氟未取代杂环作为阴离子部分的磺酸离子。版权所有（C）2005，JPO＆NCIPI

5. 发明专利

JP2006171656A Resist composition for immersion exposure, and resist pattern forming method 有权
标题翻译：耐冲击接触的耐腐蚀组合物和抗蚀剂图案形成方法
公开(公告)号：JP2006171656A
公开(公告)日：2006-06-29
申请号：JP2004367971
申请日：2004-12-20
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： TSUJI HIROMITSU , MATSUMARU SHOGO
IPC分类号： G03F7/004 , C08F228/00 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/2041
摘要： PROBLEM TO BE SOLVED: To provide a resist composition for immersion exposure capable of forming a resist pattern of a proper shape, and to provide a resist pattern forming method. SOLUTION: The resist composition for immersion exposure contains a resin component (A), whose alkali solubility is varied by the action of an acid, wherein the resin component (A) contains a high-molecular compound (A1) having a constitutional unit (a0) having an acid generating group which generates acid by irradiation with radiation. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种能够形成适当形状的抗蚀剂图案的浸渍曝光用抗蚀剂组合物，并提供抗蚀剂图案形成方法。解决方案：浸渍曝光用抗蚀剂组合物含有通过酸作用而碱溶解度变化的树脂成分（A），其中树脂成分（A）含有具有结构的高分子化合物（A1）单元（a0）具有通过辐射照射产生酸的酸产生基团。版权所有（C）2006，JPO＆NCIPI

6. 发明专利

JP2006058842A Resist composition and method of forming resist pattern 审中-公开
标题翻译：耐蚀组合物和形成耐力图案的方法
公开(公告)号：JP2006058842A
公开(公告)日：2006-03-02
申请号：JP2005052032
申请日：2005-02-25
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： TSUJI HIROMITSU , UCHIUMI YOSHIYUKI
IPC分类号： G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0045 , G03F7/0397 , G03F7/2041
摘要： PROBLEM TO BE SOLVED: To provide a resist composition capable of reducing the elution of a substance into a solvent used in an immersion lithography process, and to provide a method of forming a resist pattern using the resist composition. SOLUTION: The resist composition contains, as an acid generator ingredient (B), an onium salt type acid generator (B1) represented by the general formula (b-1) (wherein R 11 to R 13 each independently represent aryl or alkyl, provided that at least one of R 11 to R 13 represents aryl in which at least one hydrogen atom has been replaced with alkyl; and Z - represents an anion) or an onium salt type acid generator (B2) having a cyclic-group-containing anion. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供能够减少物质在浸没式光刻工艺中使用的溶剂中的洗脱的抗蚀剂组合物，并提供使用该抗蚀剂组合物形成抗蚀剂图案的方法。解决方案：抗蚀剂组合物含有作为酸发生剂成分（B）的由通式（b-1）表示的鎓盐型酸产生剂（B1）（其中R 11 R SP 13各自独立地表示芳基或烷基，条件是R 11和R 13中的至少一个表示芳基，其中至少一个氢原子已经被烷基取代; Z - 代表阴离子）或具有含环状基团的阴离子的鎓盐型酸产生剂（B2）。版权所有（C）2006，JPO＆NCIPI

7. 发明专利

JP2004354953A Photoresist composition and method for forming resist pattern by using the same 有权
公开(公告)号：JP2004354953A
公开(公告)日：2004-12-16
申请号：JP2003180258
申请日：2003-06-24
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： OGATA TOSHIYUKI , ENDO KOUTARO , TSUJI HIROMITSU , YOSHIDA MASAAKI
IPC分类号： G03F7/039 , C08F32/04 , C08F36/20 , G03F7/004 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a photoresist composition having such resist characteristics that a line-and-space (1:1) with a pattern process accuracy of ≤90 nm can be obtained with a satisfactory shape in the lithographic process for a semiconductor integrated circuit. SOLUTION: The photoresist composition comprises (A) a polymer which contains an alkali-soluble structural unit (a1), containing an aliphatic cyclic group having both of (i) a fluorine atom or a fluorinated alkyl group and (ii) an alcoholic hydroxy group, and the alkali solubility of which varies by the action of an acid; (B) an acid generating agent which generates an acid by irradiation with light; and (C) a dissolution suppressant containing fluorine atoms. COPYRIGHT: (C)2005,JPO&NCIPI

8. 发明专利

JP2007123775A Cleaning liquid and cleaning method 审中-公开
标题翻译：清洁液体和清洁方法
公开(公告)号：JP2007123775A
公开(公告)日：2007-05-17
申请号：JP2005317540
申请日：2005-10-31
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： KOSHIYAMA ATSUSHI , YOKOYA JIRO , HIRANO TOMOYUKI , TSUJI HIROMITSU
IPC分类号： H01L21/027 , H01L21/304
CPC分类号： C11D11/0047 , C11D1/72 , C11D3/43 , C11D7/5022 , G03F7/70341 , G03F7/70925
摘要： PROBLEM TO BE SOLVED: To provide a cleaning liquid that prevents an aligner from being damaged easily by a constituent eluated from photoresist in an immersion exposure process, treats a waste liquid easily, has high substitution efficiency with an immersion medium, does not interfere with throughput when manufacturing a semiconductor, and has excellent cleaning performance; and to provide a cleaning method.
SOLUTION: In the liquid immersion exposure process for filling the area between the optical lens of the aligner and an object to be exposed on a wafer stage with a liquid immersion medium for exposure; the cleaning liquid is used for cleaning the aligner after the exposure, and contains the liquid immersion medium and an organic solvent. The cleaning method uses the cleaning liquid.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种清洗液，其可以防止在浸渍曝光过程中由光致抗蚀剂洗脱的成分容易地损害对准器，容易地处理废液，用浸渍介质具有高取代效率，不会干扰制造半导体时的吞吐量，具有优异的清洗性能; 并提供清洁方法。解决方案：在液浸曝光过程中，用曝光液浸介质填充对准器的光学透镜与待曝光的物体之间的区域; 清洁液用于在曝光后清洁对准器，并含有液浸介质和有机溶剂。清洁方法使用清洁液。版权所有（C）2007，JPO＆INPIT

9. 发明专利

JP2006030532A Resist composition and method for forming resist pattern 审中-公开
标题翻译：用于形成电阻图案的耐蚀组合物和方法
公开(公告)号：JP2006030532A
公开(公告)日：2006-02-02
申请号：JP2004208488
申请日：2004-07-15
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： TSUJI HIROMITSU , YOSHIDA MASAAKI
IPC分类号： G03F7/039 , G03F7/004 , H01L21/027
CPC分类号： G03F7/0397
摘要： PROBLEM TO BE SOLVED: To provide a resist composition which can decrease elution of substances in a liquid immersion medium used in an immersion lithography process, and to provide a method for forming a resist pattern by using the resist composition.
SOLUTION: The resist composition used for a method of forming a resist pattern including an immersion exposure step contains: (A) a resin component the alkali solubility of which changes by an effect of an acid; (B) an acid generating agent component which generates an acid by exposure; and (C) an organic solvent essentially comprising at least one kind of solvent (c1) selected from a group consisting of 2-heptanone and ethyl lactate.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供可以减少浸没式光刻工艺中使用的浸液介质中的物质的洗脱的抗蚀剂组合物，并提供通过使用抗蚀剂组合物形成抗蚀剂图案的方法。解决方案：用于形成包括浸渍曝光步骤的抗蚀剂图案的方法的抗蚀剂组合物包含：（A）其碱溶性由酸的作用而变化的树脂组分; （B）通过曝光产生酸的酸产生剂成分; 和（C）基本上包含选自2-庚酮和乳酸乙酯中的至少一种溶剂（c1）的有机溶剂。版权所有（C）2006，JPO＆NCIPI

10. 发明专利

JP2005173464A Photoresist composition and resist pattern forming method 审中-公开
标题翻译：光电组合物和电阻图案形成方法
公开(公告)号：JP2005173464A
公开(公告)日：2005-06-30
申请号：JP2003416560
申请日：2003-12-15
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： TSUJI HIROMITSU , ENDO KOUTARO
IPC分类号： G03F7/004 , G03F7/033 , G03F7/039 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a photoresist composition which suppresses line edge roughness and residue on development while retaining high resolution.
SOLUTION: The photoresist composition contains (A) a polymer component including an alkali-soluble constitutional unit having an alicyclic group having both (i) a fluorine atom or a fluoroalkyl group and (ii) an alcoholic hydroxyl group, and having alkali solubility changed by the action of an acid; and (B) an acid generator component which generates an acid when it receives exposure light, and contains at least (B-1) an onium salt having C
- (SO
2 C
n F
2n+1 )
3 (n is an integer of 1-5) as an anion moiety.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种光致抗蚀剂组合物，其在保持高分辨率的同时抑制线边缘粗糙度和显影残留。光致抗蚀剂组合物含有（A）包含具有具有（i）氟原子或氟代烷基和（ii）醇羟基的脂环族基团的碱溶性结构单元的聚合物组分，并且具有碱溶解度因酸的作用而改变; 和（B）当其接收到曝光时产生酸的酸产生剂组分，并且至少含有（B-1）具有C（S-S 2）/ 作为阴离子部分，作为阴离子部分，作为阴离子部分，作为阴离子部分的碳原子数3〜3个（n为1〜5的整数）。版权所有（C）2005，JPO＆NCIPI

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