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1. 发明申请

WO0159804A3 DEVICE AND METHOD FOR COUPLING TWO CIRCUIT COMPONENTS WHICH HAVE DIFFERENT IMPEDANCES 审中-公开
标题翻译：用于耦合具有不同冲突的两个电路组件的装置和方法
公开(公告)号：WO0159804A3
公开(公告)日：2002-05-30
申请号：PCT/US0140073
申请日：2001-02-09
申请人： TOKYO ELECTRON LTD , MITROVIC ANDREJ S , WINDHORN THOMAS H , JOHNSON WAYNE L
发明人： MITROVIC ANDREJ S , WINDHORN THOMAS H , JOHNSON WAYNE L
IPC分类号： H05H1/46 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/3065 , H01P5/02
CPC分类号： H01J37/32211 , H01P5/024
摘要： An AC power feed device for conducting electrical power from a source to a load. The feed device has a constant characteristic impedance along its length and an outer periphery that varies in size progressively along its length, or the feed device has an input end connected to the match network and an output end connected to an electrode, and has a characteristic impedance with varies from a value substantially equal to the output impedance of a match network coupled at the input end to a value equal to the impedance of the electrode.
摘要翻译：一种用于从电源向负载传导电力的交流供电装置。进给装置沿其长度具有恒定的特性阻抗，外周沿其长度逐渐变化，或者进给装置具有连接到匹配网络的输入端和连接到电极的输出端，并且具有特征阻抗从基本上等于在输入端耦合的匹配网络的输出阻抗的值变化到等于电极阻抗的值。

2. 发明申请

WO0165895A3 ELECTRICALLY CONTROLLED PLASMA UNIFORMITY IN A HIGH DENSITY PLASMA SOURCE 审中-公开
标题翻译：在高密度等离子体源中电控制等离子体均匀性
公开(公告)号：WO0165895A3
公开(公告)日：2002-02-07
申请号：PCT/US0106239
申请日：2001-02-28
申请人： TOKYO ELECTRON LTD , JOHNSON WAYNE L , WINDHORN THOMAS H , STRANG ERIC J
发明人： JOHNSON WAYNE L , WINDHORN THOMAS H , STRANG ERIC J
IPC分类号： C23C14/34 , C23C16/48 , H01J37/32 , H01L21/3065 , H05H1/46
CPC分类号： H01J37/321 , H05H1/46
摘要： Apparatus including a chamber and a coil system for converting a field-generating current into an RF magnetic field in the chamber when the chamber contains an ionized gas which interacts with the RF magnetic field to create a plasma. The plasma is contained within a cylindrical region enclosed by the chamber, which region has a longitudinal center axis, and the region is considered to be made up of a plurality of annular zones concentric with the center axis and disposed at respectively different distances from the center axis. The coil system is composed of: a plurality of individual coils each positioned and dimensioned to produce an RF magnetic field which predominantly influences a respective annular zone.
摘要翻译：一种装置，包括一个室和一个线圈系统，用于当室内包含与RF磁场相互作用以产生等离子体的电离气体时，将场产生电流转换成室内的RF磁场。等离子体包含在由腔室包围的圆柱形区域内，该区域具有纵向中心轴线，并且该区域被认为由与中心轴线同心的多个环形区域组成并且分别设置在与中心不同的距离处轴。线圈系统由以下组成：多个单独的线圈，每个线圈定位和尺寸设计成产生主要影响相应环形区域的RF磁场。

3. 发明申请

WO0195352A3 APPARATUS AND METHOD FOR ACCELERATING ELECTRONS IN A PLASMA REACTOR 审中-公开
标题翻译：用于加速等离子体反应器中的电子的装置和方法
公开(公告)号：WO0195352A3
公开(公告)日：2002-05-30
申请号：PCT/US0117190
申请日：2001-05-29
申请人： TOKYO ELECTRON LTD , QUON BILL H , JEVTIC JOVAN , WINDHORN THOMAS H , JOHNSON WAYNE L
发明人： QUON BILL H , JEVTIC JOVAN , WINDHORN THOMAS H , JOHNSON WAYNE L
IPC分类号： H05H1/46 , H01J37/32 , H01L21/3065
CPC分类号： H01J37/32082 , H01J37/32706
摘要： Apparatus and method for supplying a bias voltage to a wafer chuck in a plasma reactor system, in which an RF voltage source produces a relatively low frequency RF voltage, a VHF voltage source produces a VHF voltage having a higher frequency than the RF voltage, and a coupling circuit connected between the RF and VHF voltage sources and wafer chuck combines the RF and VHF voltages for application to the wafer chuck.
摘要翻译：用于向等离子体反应器系统中的晶片卡盘提供偏置电压的装置和方法，其中RF电压源产生相对低频的RF电压，VHF电压源产生具有比RF电压更高的频率的VHF电压，以及连接在RF和VHF电压源和晶片卡盘之间的耦合电路将RF和VHF电压组合以用于晶片卡盘。

4. 发明申请

WO02099839A2 WAFER BIAS DRIVE FOR A PLASMA SOURCE 审中-公开
标题翻译： WAVER BIAS DRIVE FOR A PLASMA SOURCE
公开(公告)号：WO02099839A2
公开(公告)日：2002-12-12
申请号：PCT/US0151642
申请日：2001-12-12
申请人： TOKYO ELECTRON LTD , LONG MAOLIN , PARSONS RICHARD , JOHNSON WAYNE L
发明人： LONG MAOLIN , PARSONS RICHARD , JOHNSON WAYNE L
IPC分类号： H01J37/32 , H01L21/00 , H01L21/683 , H01L21/68
CPC分类号： H01L21/67069 , H01J37/32009 , H01J37/32532 , H01J37/32706 , H01L21/6838
摘要： A segmented chuck provides uniform processing of a workpiece (e.g., a wafer) with a plasma in a process chamber. The segmented chuck includes a segmented electrode having a plurality of sub-electrodes where the sub-electrodes are electrically isolated from one another by insulating connections and the segmented electrode defines a process surface that is adapted to receive the workpiece. The segmented chuck also includes a plurality of RF drivers for driving the sub-electrodes with RF biases, where the RF biases couple the workpiece with the plasma in the process chamber. By allowing the workpiece to be placed on the chuck, the coupling between the plasma and the workpiece is enhanced. By allowing the sub-electrodes to be independently driven by RF drivers, more uniform processing can be achieved with larger workpiece.
摘要翻译：分段卡盘提供在处理室中具有等离子体的工件（例如，晶片）的均匀加工。分段卡盘包括具有多个子电极的分段电极，其中子电极通过绝缘连接彼此电绝缘，并且分段电极限定适于接收工件的过程表面。分段卡盘还包括用于利用RF偏压驱动子电极的多个RF驱动器，其中RF偏置将工件与处理室中的等离子体耦合。通过允许将工件放置在卡盘上，等离子体和工件之间的耦合得到增强。通过允许子电极由RF驱动器独立驱动，可以用较大的工件实现更均匀的处理。

5. 发明申请

WO0150109A3 WAFER BAND-EDGE MEASUREMENT USING SPECTROSCOPY AND A PROCESS OF UNIFORM WAFER TEMPERATURE CONTROL 审中-公开
标题翻译：使用光谱法和均匀波形温度控制方法的波段边缘测量
公开(公告)号：WO0150109A3
公开(公告)日：2002-01-10
申请号：PCT/US0100003
申请日：2001-01-05
申请人： TOKYO ELECTRON LTD , DENTON MEDONA B , JOHNSON WAYNE L , SIRKIS MURRAY D
发明人： DENTON MEDONA B , JOHNSON WAYNE L , SIRKIS MURRAY D
IPC分类号： G01J5/02 , G01J5/00 , G01K11/12 , H01L21/00 , H01L21/205 , H01L21/3065 , H01L21/66 , H05B1/02
CPC分类号： G01K11/12 , H01L21/67248 , H01L22/12 , H01L22/26
摘要： A method and system for using transmission spectroscopy to measure a temperature of a substrate (135). By passing light through a substrate, the temperature of the substrate can be determined using the band-edge characteristics of the wafer. This in-situ method and system can be used as a feedback control in combination with a variable temperature substrate holder (182) to more accurately control the processing conditions of the substrate. By utilizing a multiplicity of measurement sites the variation of the temperature across the substrate (135) can also be measured.
摘要翻译：一种使用透射光谱测量基板（135）的温度的方法和系统。通过使光通过基板，可以使用晶片的带边特性来确定基板的温度。这种原位方法和系统可以用作与可变温度衬底保持器（182）组合的反馈控制，以更精确地控制衬底的处理条件。通过利用多个测量点，也可以测量跨越衬底（135）的温度变化。

6. 发明申请

WO0188966A3 METHOD OF ADJUSTING THE THICKNESS OF AN ELECTRODE IN A PLASMA PROCESSING SYSTEM 审中-公开
标题翻译：调整等离子体处理系统中电极厚度的方法
公开(公告)号：WO0188966A3
公开(公告)日：2002-03-28
申请号：PCT/US0114636
申请日：2001-05-08
申请人： TOKYO ELECTRON LTD , STRANG ERIC J , BIBBY THOMAS F A , JOHNSON WAYNE L
发明人： STRANG ERIC J , BIBBY THOMAS F A , JOHNSON WAYNE L
IPC分类号： H01L21/3065 , H01J37/32
CPC分类号： H01J37/32009 , H01J37/32532 , H01J37/32559 , H01J37/32862
摘要： A method of adjusting the relative thickness of an electrode assembly(10) in a plasma processing system (6) capable of supporting a plasma (20, 120) in a reactor chamber (16). The electrode assembly is arranged in the reactor chamber and includes at least one electrode having a lower surface that may have defined by at least one sacrificial protective plate (100). The electrode has a nonuniform thickness resulting from a plasma processing operation performed in the reactor chamber. The method includes a step of forming a plasma (120) designed to selectively etch the at least one electrode at the lower surface, followed by a step of etching the electrode with the aid of the plasma to reduce the nonuniformity in thickness (T(X,Z)) of the at least one electrode. The thickness of the electrode may be measured in situ using an acoustic transducer (210) during the processing of workpieces as well as during the restorative plasma etching of the electrode.
摘要翻译：一种在能够支撑反应室（16）中的等离子体（20,120）的等离子体处理系统（6）中调节电极组件（10）的相对厚度的方法。电极组件布置在反应器室中并且包括至少一个电极，其具有可由至少一个牺牲保护板（100）限定的下表面。电极具有由在反应器室中执行的等离子体处理操作产生的不均匀的厚度。该方法包括形成等离子体（120）的步骤，该等离子体（120）被设计为选择性地蚀刻下表面上的至少一个电极，随后借助等离子体蚀刻电极以减小厚度不均匀性（T（X ，Z））。可以在工件加工期间以及在电极的修复等离子体蚀刻期间使用声换能器（210）原位测量电极的厚度。

7. 发明申请

WO0124581A8 MULTI-ZONE RESISTANCE HEATER 审中-公开
标题翻译：多区域电阻加热器
公开(公告)号：WO0124581A8
公开(公告)日：2001-07-19
申请号：PCT/US0025503
申请日：2000-09-18
申请人： TOKYO ELECTRON LTD , JOHNSON WAYNE L , STRANG ERIC J
发明人： JOHNSON WAYNE L , STRANG ERIC J
IPC分类号： H05B3/20 , C23C16/458 , C23C16/46 , H01L21/00 , H01L21/02 , H01L21/302 , H01L21/683 , H05B3/02 , H05B3/10 , H05B3/06 , B05B5/00 , B05B5/025 , C23C16/00 , H01T23/00 , H05B3/16 , H05B3/44 , H05B3/68
CPC分类号： H01L21/67109 , C23C16/4586 , C23C16/46 , H01L21/67103 , H01L21/6831
摘要： A substrate holder for holding a substrate (e.g., a wafer or an LCD panel) during plasma processing. The substrate holder is a stack of processing elements which each perform at least one function. The elements include an electrostatic chuck (102), an He gas distribution system (122), multi-zone heating plates (132), and multi-zone cooling system (152). Each element is designed to match the characteristic of the processing system, e.g., by applying heat based on a heat loss characteristic of the substrate during normal processing. The integrated design allows for precise control of the operating conditions, including, but not limited to, fast heating and fast cooling of a substrate.
摘要翻译：一种用于在等离子体处理期间保持衬底（例如晶片或LCD面板）的衬底保持器。衬底支架是一堆处理元件，每个处理元件执行至少一个功能。这些元件包括静电吸盘（102），He气体分配系统（122），多区域加热板（132）和多区域冷却系统（152）。每个元件被设计为匹配处理系统的特性，例如通过在正常处理期间基于基板的热损失特性施加热量。集成的设计可以精确控制操作条件，包括但不限于快速加热和快速冷却基板。

8. 发明申请

WO9919526A3 APPARATUS AND METHOD FOR ADJUSTING DENSITY DISTRIBUTION OF A PLASMA 审中-公开
标题翻译：调整等离子体密度分布的装置和方法
公开(公告)号：WO9919526A3
公开(公告)日：1999-07-01
申请号：PCT/US9821622
申请日：1998-10-15
申请人： TOKYO ELECTRON LTD , JOHNSON WAYNE L
发明人： JOHNSON WAYNE L
IPC分类号： H05H1/00 , B23K10/00 , H01J37/32 , H01L21/302 , H01L21/3065 , H05H1/46
CPC分类号： H01J37/32871 , H01J37/321 , H01J37/3244 , H05H1/46
摘要： An apparatus and method for adjusting a distribution of a density of a plasma and/or a distribution of a chemical composition of a plasma, thereby adjusting the characteristics of a reaction used to process a substrate. The distribution of the density and/or the chemical composition are controlled by adjusting the geometry of recombination surfaces that are in contact with the plasma and which thereby stimulate the recombination of ions and electrons in particular regions of the plasma. For example, a recombination member (502) having a predetermined geometry can be provided in order to adjust the plasma density and chemistry in one or more local regions. In addition, plasma density can be adjusted by providing a conductive shield (1002) to reduce the coupling of RF power to particular regions of the plasma, thereby reducing plasma density in these regions. By adjusting the distribution of the density and chemical composition of a plasma, uniformity of a plasma processes (e.g., etching processes or plasma-enhanced chemical vapor deposition processes), is improved, resulting in improved uniformity of electrical properties of devices (106) being fabricated, improved critical dimension, and, consequently, improved performance and reduced costs of circuits fabricated on a substrate.
摘要翻译：用于调节等离子体的密度分布和/或等离子体的化学组成的分布的装置和方法，从而调节用于处理基板的反应的特性。通过调节与等离子体接触的复合表面的几何形状来控制密度和/或化学成分的分布，由此激发等离子体的特定区域中的离子和电子的复合。例如，可以提供具有预定几何形状的复合构件（502），以便调整一个或多个局部区域中的等离子体密度和化学性质。此外，可以通过提供导电屏蔽（1002）来调节等离子体密度，以减少RF功率与等离子体的特定区域的耦合，从而降低这些区域中的等离子体密度。通过调节等离子体的密度和化学组成的分布，提高了等离子体工艺（例如蚀刻工艺或等离子体增强化学气相沉积工艺）的均匀性，从而提高了器件（106）的电性能的均匀性制造，改进的临界尺寸，并因此改善了在衬底上制造的电路的性能和降低的成本。

9. 发明申请

WO0237521A3 HALL EFFECT ION SOURCE AT HIGH CURRENT DENSITY 审中-公开
标题翻译：霍尔效应离子源在高电流密度
公开(公告)号：WO0237521A3
公开(公告)日：2003-03-13
申请号：PCT/US0142846
申请日：2001-10-30
申请人： TOKYO ELECTRON LTD , JOHNSON WAYNE L
发明人： JOHNSON WAYNE L
IPC分类号： F03H1/00 , H01J27/00 , H01J27/18
CPC分类号： H01J27/146 , H01J27/16
摘要： A high current density, low voltage ion source includes a vacuum chamber. A plasma source induces generation of a plasma within the chamber, or injects a plasma directly into the chamber. A magnetic and electric field cooperate to guide the ions form the plasma regions in a beam towards a substrate to be processed by the ions. A method of use of the ion source includes production of an ion beam for processing of a substrate.
摘要翻译：高电流密度，低电压离子源包括真空室。等离子体源在室内产生等离子体，或者将等离子体直接注入到室中。磁场和电场协作以引导离子形成束中的等离子体区域朝向待离子处理的衬底。使用离子源的方法包括制造用于处理衬底的离子束。

10. 发明申请

WO0165590A3 ESRF SOURCE FOR ION PLATING EPITAXIAL DEPOSITION 审中-公开
标题翻译：用于离子外延沉积的ESRF源
公开(公告)号：WO0165590A3
公开(公告)日：2002-02-07
申请号：PCT/US0106793
申请日：2001-03-02
申请人： TOKYO ELECTRON LTD , JOHNSON WAYNE L
发明人： JOHNSON WAYNE L
IPC分类号： C23C14/32 , C30B23/02 , C30B25/10 , C30B23/08 , C30B25/06
CPC分类号： H01J37/321 , C23C14/32 , C30B23/02 , C30B25/105 , C30B29/06
摘要： A method and system for growing a crystalline layer on a substrate. Using an electrically-shielded RF (ESRF) source (10), a plasma is created and directed to a substrate (26) inside the ESRF source. The plasma arrives at the substrate surface (24) with a high mobility and enables its constituents to form a highly regular structure on the substrate.
摘要翻译：用于在衬底上生长晶体层的方法和系统。使用电屏蔽RF（ESRF）源（10），产生等离子体并将其引导到ESRF源内的衬底（26）。等离子体以高迁移率到达衬底表面（24），并使其组分能够在衬底上形成高度规则的结构。

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