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1. 发明公开

EP1095217A1 PLASMA VACUUM PUMPING CELL 审中-公开
标题翻译：真空泵等离子
公开(公告)号：EP1095217A1
公开(公告)日：2001-05-02
申请号：EP99930173.2
申请日：1999-06-29
申请人： Tokyo Electron Limited , Dandl, Raphael A. , Guest, Gareth , Johnson, Wayne L.
发明人： DANDL, Raphael, A. , GUEST, Gareth , JOHNSON, Wayne L.,Tokyo Electron Phoenix
IPC分类号： F04B37/14
CPC分类号： H01J37/32834 , F04B17/00 , F04B37/14 , H01J37/3266 , H01J41/14 , H05H1/54
摘要： A plasma pumping cell and method for pumping ions from a first region containing a plasma to a second region when the plasma pumping cell is interposed between the first and second regions, the plasma pumping cell including: a partition member (4) positioned between the first and second regions, the partition member (4) having a through opening defining a conduit (22); a plurality of magnets (24) positioned relative to the conduit in a manner to provide lines of magnetic force that extend through the conduit; a source of free electrons in communication with the conduit; and an electric potential source (34) disposed relative to the conduit to create an electrostatic field which accelerates ions from the conduit (22) to the second region.

2. 发明公开

EP3429846A1 SYSTEMS AND METHODS FOR DEPOSITING CHARGED METAL DROPLETS ONTO A WORKPIECE 有权
公开(公告)号：EP3429846A1
公开(公告)日：2019-01-23
申请号：EP17767480.1
申请日：2017-03-15
申请人： Johnson, Wayne, L.
发明人： MURR, Lawrence , HALPIN, Mike , FRANZ, Patrick , JOHNSON, Wayne, L.
IPC分类号： B33Y70/00

3. 发明申请

WO0188966A3 METHOD OF ADJUSTING THE THICKNESS OF AN ELECTRODE IN A PLASMA PROCESSING SYSTEM 审中-公开
标题翻译：调整等离子体处理系统中电极厚度的方法
公开(公告)号：WO0188966A3
公开(公告)日：2002-03-28
申请号：PCT/US0114636
申请日：2001-05-08
申请人： TOKYO ELECTRON LTD , STRANG ERIC J , BIBBY THOMAS F A , JOHNSON WAYNE L
发明人： STRANG ERIC J , BIBBY THOMAS F A , JOHNSON WAYNE L
IPC分类号： H01L21/3065 , H01J37/32
CPC分类号： H01J37/32009 , H01J37/32532 , H01J37/32559 , H01J37/32862
摘要： A method of adjusting the relative thickness of an electrode assembly(10) in a plasma processing system (6) capable of supporting a plasma (20, 120) in a reactor chamber (16). The electrode assembly is arranged in the reactor chamber and includes at least one electrode having a lower surface that may have defined by at least one sacrificial protective plate (100). The electrode has a nonuniform thickness resulting from a plasma processing operation performed in the reactor chamber. The method includes a step of forming a plasma (120) designed to selectively etch the at least one electrode at the lower surface, followed by a step of etching the electrode with the aid of the plasma to reduce the nonuniformity in thickness (T(X,Z)) of the at least one electrode. The thickness of the electrode may be measured in situ using an acoustic transducer (210) during the processing of workpieces as well as during the restorative plasma etching of the electrode.
摘要翻译：一种在能够支撑反应室（16）中的等离子体（20,120）的等离子体处理系统（6）中调节电极组件（10）的相对厚度的方法。电极组件布置在反应器室中并且包括至少一个电极，其具有可由至少一个牺牲保护板（100）限定的下表面。电极具有由在反应器室中执行的等离子体处理操作产生的不均匀的厚度。该方法包括形成等离子体（120）的步骤，该等离子体（120）被设计为选择性地蚀刻下表面上的至少一个电极，随后借助等离子体蚀刻电极以减小厚度不均匀性（T（X ，Z））。可以在工件加工期间以及在电极的修复等离子体蚀刻期间使用声换能器（210）原位测量电极的厚度。

4. 发明申请

WO0124581A8 MULTI-ZONE RESISTANCE HEATER 审中-公开
标题翻译：多区域电阻加热器
公开(公告)号：WO0124581A8
公开(公告)日：2001-07-19
申请号：PCT/US0025503
申请日：2000-09-18
申请人： TOKYO ELECTRON LTD , JOHNSON WAYNE L , STRANG ERIC J
发明人： JOHNSON WAYNE L , STRANG ERIC J
IPC分类号： H05B3/20 , C23C16/458 , C23C16/46 , H01L21/00 , H01L21/02 , H01L21/302 , H01L21/683 , H05B3/02 , H05B3/10 , H05B3/06 , B05B5/00 , B05B5/025 , C23C16/00 , H01T23/00 , H05B3/16 , H05B3/44 , H05B3/68
CPC分类号： H01L21/67109 , C23C16/4586 , C23C16/46 , H01L21/67103 , H01L21/6831
摘要： A substrate holder for holding a substrate (e.g., a wafer or an LCD panel) during plasma processing. The substrate holder is a stack of processing elements which each perform at least one function. The elements include an electrostatic chuck (102), an He gas distribution system (122), multi-zone heating plates (132), and multi-zone cooling system (152). Each element is designed to match the characteristic of the processing system, e.g., by applying heat based on a heat loss characteristic of the substrate during normal processing. The integrated design allows for precise control of the operating conditions, including, but not limited to, fast heating and fast cooling of a substrate.
摘要翻译：一种用于在等离子体处理期间保持衬底（例如晶片或LCD面板）的衬底保持器。衬底支架是一堆处理元件，每个处理元件执行至少一个功能。这些元件包括静电吸盘（102），He气体分配系统（122），多区域加热板（132）和多区域冷却系统（152）。每个元件被设计为匹配处理系统的特性，例如通过在正常处理期间基于基板的热损失特性施加热量。集成的设计可以精确控制操作条件，包括但不限于快速加热和快速冷却基板。

5. 发明申请

WO9919526A3 APPARATUS AND METHOD FOR ADJUSTING DENSITY DISTRIBUTION OF A PLASMA 审中-公开
标题翻译：调整等离子体密度分布的装置和方法
公开(公告)号：WO9919526A3
公开(公告)日：1999-07-01
申请号：PCT/US9821622
申请日：1998-10-15
申请人： TOKYO ELECTRON LTD , JOHNSON WAYNE L
发明人： JOHNSON WAYNE L
IPC分类号： H05H1/00 , B23K10/00 , H01J37/32 , H01L21/302 , H01L21/3065 , H05H1/46
CPC分类号： H01J37/32871 , H01J37/321 , H01J37/3244 , H05H1/46
摘要： An apparatus and method for adjusting a distribution of a density of a plasma and/or a distribution of a chemical composition of a plasma, thereby adjusting the characteristics of a reaction used to process a substrate. The distribution of the density and/or the chemical composition are controlled by adjusting the geometry of recombination surfaces that are in contact with the plasma and which thereby stimulate the recombination of ions and electrons in particular regions of the plasma. For example, a recombination member (502) having a predetermined geometry can be provided in order to adjust the plasma density and chemistry in one or more local regions. In addition, plasma density can be adjusted by providing a conductive shield (1002) to reduce the coupling of RF power to particular regions of the plasma, thereby reducing plasma density in these regions. By adjusting the distribution of the density and chemical composition of a plasma, uniformity of a plasma processes (e.g., etching processes or plasma-enhanced chemical vapor deposition processes), is improved, resulting in improved uniformity of electrical properties of devices (106) being fabricated, improved critical dimension, and, consequently, improved performance and reduced costs of circuits fabricated on a substrate.
摘要翻译：用于调节等离子体的密度分布和/或等离子体的化学组成的分布的装置和方法，从而调节用于处理基板的反应的特性。通过调节与等离子体接触的复合表面的几何形状来控制密度和/或化学成分的分布，由此激发等离子体的特定区域中的离子和电子的复合。例如，可以提供具有预定几何形状的复合构件（502），以便调整一个或多个局部区域中的等离子体密度和化学性质。此外，可以通过提供导电屏蔽（1002）来调节等离子体密度，以减少RF功率与等离子体的特定区域的耦合，从而降低这些区域中的等离子体密度。通过调节等离子体的密度和化学组成的分布，提高了等离子体工艺（例如蚀刻工艺或等离子体增强化学气相沉积工艺）的均匀性，从而提高了器件（106）的电性能的均匀性制造，改进的临界尺寸，并因此改善了在衬底上制造的电路的性能和降低的成本。

6. 发明申请

WO2017161052A1 SYSTEMS AND METHODS FOR DEPOSITING CHARGED METAL DROPLETS ONTO A WORKPIECE 审中-公开
标题翻译：用于将带电金属液滴沉积在工件上的系统和方法
公开(公告)号：WO2017161052A1
公开(公告)日：2017-09-21
申请号：PCT/US2017/022596
申请日：2017-03-15
申请人： JOHNSON, Wayne, L.
发明人： JOHNSON, Wayne, L. , MURR, Lawrence , HALPIN, Mike , FRANZ, Patrick
IPC分类号： B33Y70/00
摘要： Apparatus and methods are described for performing additive manufacturing. The apparatus includes a vacuum chamber for fabricating a workpiece composed of deposited metal, a table positioned within the vacuum chamber, and configured to support fabrication of the workpiece on a substrate, and one or more multiple droplet emitters coupled to the vacuum chamber, and arranged to irradiate the workpiece with a stream of molten metal droplets during fabrication.
摘要翻译：描述了用于执行增材制造的装置和方法。该设备包括用于制造由沉积金属构成的工件的真空腔室，放置在真空腔室内并被配置为支持在基板上制造工件的工作台，以及耦合到真空腔室的一个或多个多液滴发射器，在制造过程中用熔融金属液滴流照射工件。

7. 发明申请

WO0249395A3 RAPID THERMAL PROCESSING LAMP AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：快速热处理灯及其制造方法
公开(公告)号：WO0249395A3
公开(公告)日：2003-01-23
申请号：PCT/US0144708
申请日：2001-12-12
申请人： TOKYO ELECTRON LTD , JOHNSON WAYNE L
发明人： JOHNSON WAYNE L
IPC分类号： F27B5/14 , F27B17/00 , H01L21/00 , H05B3/00 , H05B6/02 , H05B6/10
CPC分类号： H05B6/105 , F27B17/0025 , H01L21/67115 , H05B3/0047
摘要： A method and system for inductively coupling energy to a heating filament (7A', 7B', 7C', 7A, 7B, 7C) in a thermal processing environment. By applying AC power to a coil antenna (11) and inductive coupling to a filament (e.g., a halogen lamp filament), a number of connections that are subject to fatigue is reduced, thereby increasing the reliability of the heater (2A, 2B). Such an environment can be used to process semiconductor wafers (3) and liquid crystal displays.
摘要翻译：一种用于在热处理环境中将能量感应耦合到加热丝（7A'，7B'，7C'，7A，7B，7C）的方法和系统。通过对线圈天线（11）施加交流电力和对灯丝（例如卤素灯灯丝）的电感耦合，减少了许多遭受疲劳的连接，从而增加了加热器（2A，2B）的可靠性，。这种环境可用于处理半导体晶片（3）和液晶显示器。

8. 发明申请

WO2003005406A1 PLASMA PUMP WITH INTER-STAGE PLASMA SOURCE 审中-公开
标题翻译：等离子体泵与等离子体等离子体源
公开(公告)号：WO2003005406A1
公开(公告)日：2003-01-16
申请号：PCT/US2002/020868
申请日：2002-07-02
申请人： TOKYO ELECTRON LIMITED , QUON, Bill, H. , JOHNSON, Wayne, L.
发明人： QUON, Bill, H. , JOHNSON, Wayne, L.
IPC分类号： H01J37/02
CPC分类号： H01J37/32834 , H01J37/32082
摘要： A high efficiency plasma pump for use in a plasma processing system that includes a plasma processing device having a first plasma density proximate a processing region and a second plasma density proximate an exit region is disclosed. The plasma pump includes an inter-stage plasma (ISP) source fluidly coupled to the plasma processing device proximate the exit region, the ISP source comprising an inter-stage plasma region having a third plasma density; and a plasma pump fluidly coupled to the ISP, the plasma pump having a fourth plasma density, wherein pumping speed is dependent upon the third plasma density and the fourth plasma density. The ISP source increasing the third plasma density to increase the pumping efficiency.
摘要翻译：公开了一种用于等离子体处理系统的高效率等离子体泵，其包括具有靠近处理区域的第一等离子体密度和靠近出口区域的第二等离子体密度的等离子体处理装置。等离子体泵包括在出口区域处流体耦合到等离子体处理装置的级间等离子体（ISP）源，ISP源包括具有第三等离子体密度的级间等离子体区域; 以及流体耦合到ISP的等离子体泵，等离子体泵具有第四等离子体密度，其中泵送速度取决于第三等离子体密度和第四等离子体密度。 ISP源增加第三种等离子体密度以提高泵送效率。

9. 发明申请

WO02075801A3 METHOD OF FABRICATING OXIDES WITH LOW DEFECT DENSITIES 审中-公开
标题翻译：制造低缺陷密度氧化物的方法
公开(公告)号：WO02075801A3
公开(公告)日：2002-10-31
申请号：PCT/US0151502
申请日：2001-11-07
申请人： TOKYO ELECTRON LTD , JOHNSON WAYNE L
发明人： JOHNSON WAYNE L
IPC分类号： C23C16/40 , C23C16/44 , C23C16/455 , C23C16/505 , C23C16/515 , H01L21/28 , H01L21/316 , H01L21/31
CPC分类号： H01L21/28194 , C23C16/401 , C23C16/45523 , C23C16/505 , C23C16/515 , H01L21/02164 , H01L21/02274 , H01L21/0228 , H01L21/28167 , H01L21/28211 , H01L21/31612 , H01L21/31662
摘要： A method and system for forming a low defect oxide in a plasma processing chamber. By pulsing at least one of an RF power source and a processing gas, the growth of the oxide can be regulated. During periods in which the processing gas is not injected, an inert gas is injected to keep a substantially constant flow rate.
摘要翻译：一种在等离子体处理室中形成低缺陷氧化物的方法和系统。通过脉冲射频功率源和处理气体中的至少一种，可以调节氧化物的生长。在未注入处理气体的期间，注入惰性气体以保持基本恒定的流量。

10. 发明申请

WO02059933A3 VERTICALLY TRANSLATABLE CHUCK ASSEMBLY AND METHOD FOR A PLASMA REACTOR SYSTEM 审中-公开
标题翻译：用于等离子体反应器系统的垂直可翻转组件和方法
公开(公告)号：WO02059933A3
公开(公告)日：2002-10-10
申请号：PCT/US0148851
申请日：2001-12-20
申请人： TOKYO ELECTRON LTD , JOHNSON WAYNE L , FINK STEVEN T , BROWNING JEFF , JEVTIC JOVAN
发明人： JOHNSON WAYNE L , FINK STEVEN T , BROWNING JEFF , JEVTIC JOVAN
IPC分类号： H01J37/32 , H01L21/00
CPC分类号： H01L21/67069 , H01J37/32082 , H01J37/32174
摘要： A chuck assembly (110) for supporting a workpiece (116) within a plasma reactor chamber (60) having sidewalls (64) surrounding an interior region (65) capable of supporting a plasma. The assembly includes a chuck base (130) and a plurality of support arms (150A-150C) extending outwardly from the chuck base perimeter to the chamber sidewalls. The support arms are adapted to support the chuck base within the interior region, while also being adapted to provide a path for mechanically, electrically, pneumatically and/or fluidly communicating with the chuck assembly from outside the chamber. The chuck assembly includes a workpiece support member (160) arranged above the chuck base, capable of supporting the workpiece and serving as a chuck electrode. The workpiece support member is supported by one or more vertical translation member (168) arranged between and operatively connected to the chuck base and the workpiece support member. The chuck assembly includes a match network (180MN), wherein at least a portion of the match network is mounted directly to the workpiece support member. The use of the support arms allows for the positioning of a vacuum pump system (250) directly beneath the chuck assembly.
摘要翻译：一种用于在具有围绕能够支撑等离子体的内部区域（65）的侧壁（64）的等离子体反应器室（60）内支撑工件（116）的卡盘组件（110）。组件包括卡盘基座（130）和从卡盘基部周边向外延伸到腔室侧壁的多个支撑臂（150A-150C）。所述支撑臂适于在所述内部区域内支撑所述卡盘基座，同时还适于提供用于从所述腔室外部与所述卡盘组件机械，电气，气动和/或流体连通的路径。卡盘组件包括布置在卡盘基座上方的能够支撑工件并用作卡盘电极的工件支撑构件（160）。工件支撑构件由一个或多个垂直平移构件（168）支撑，该垂直平移构件布置在卡盘基座和工件支撑构件之间并且可操作地连接到卡盘基座和工件支撑构件上。卡盘组件包括匹配网络（180MN），其中匹配网络的至少一部分直接安装到工件支撑构件。支撑臂的使用允许将真空泵系统（250）直接定位在卡盘组件的正下方。

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