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1. 发明申请

WO2005104217A3 SYSTEM AND METHOD FOR ETCHING A MASK 审中-公开
标题翻译：用于蚀刻掩模的系统和方法
公开(公告)号：WO2005104217A3
公开(公告)日：2005-12-29
申请号：PCT/US2005004070
申请日：2005-02-08
申请人： TOKYO ELECTRON LTD , YUE HONGYU , YAMASHITA ASAO
发明人： YUE HONGYU , YAMASHITA ASAO
IPC分类号： H01L21/311 , H01L21/66 , H01L21/32
CPC分类号： H01L22/20 , H01L21/31144
摘要： A system and method for transferring a pattern from an overlying layer into an underlying layer, while laterally trimming a feature present within the pattern is described. The pattern transfer is performed using an etch process according to a process recipe, wherein at least one variable parameter within the process recipe is adjusted given a target trim amount. The adjustment of the variable parameter is achieved using a process model established for relating trim amount data with the variable parameter.
摘要翻译：描述了一种用于将图案从上层转移到下层中的系统和方法，同时横向修剪图案内存在的特征。使用根据工艺配方的蚀刻工艺执行图案转印，其中在给定目标修剪量的情况下调整处理配方内的至少一个可变参数。可变参数的调整是使用建立用于将修剪量数据与可变参数相关联的过程模型来实现的。

2. 发明申请

WO2005104215A3 METHOD AND SYSTEM FOR ADJUSTING A CHEMICAL OXIDE REMOVAL PROCESS USING PARTIAL PRESSURE 审中-公开
标题翻译：使用部分压力调节化学氧化物去除工艺的方法和系统
公开(公告)号：WO2005104215A3
公开(公告)日：2005-12-22
申请号：PCT/US2005004036
申请日：2005-02-08
申请人： TOKYO ELECTRON LTD , YUE HONGYU
发明人： YUE HONGYU
IPC分类号： H01L21/66
CPC分类号： H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： A method and system for trimming a feature on a substrate. During a chemical treatment of the substrate, the substrate is exposed to a reactive gaseous chemistry, such as HF/NH3, under controlled conditions. An inert gas can also be introduced with the reactant gaseous chemistry. A process model is developed for an aspect of the first reactant, an aspect of the second reactant, and an aspect of the optional inert gas. Upon specifying a target trim amount, the process model is utilized to determine a process recipe for achieving the specified target.
摘要翻译：一种用于修整衬底上的特征的方法和系统。在基板的化学处理期间，在受控条件下将基板暴露于反应性气体化学物质，例如HF / NH 3。惰性气体也可以与反应物气态化学物质一起引入。开发了第一反应物的一个方面，第二反应物的一个方面以及任选的惰性气体的一个方面的过程模型。在指定目标修剪量时，使用过程模型来确定用于实现指定目标的过程配方。

3. 发明申请

WO2004003969A3 METHOD AND SYSTEM FOR PREDICTING PROCESS PERFORMANCE USING MATERIAL PROCESSING TOOL AND SENSOR DATA 审中-公开
标题翻译：使用材料处理工具和传感器数据预测过程性能的方法和系统
公开(公告)号：WO2004003969A3
公开(公告)日：2004-05-13
申请号：PCT/US0316245
申请日：2003-06-27
申请人： TOKYO ELECTRON LTD , LAM HIEU A , YUE HONGYU , SHRINER JOHN
发明人： LAM HIEU A , YUE HONGYU , SHRINER JOHN
IPC分类号： H01L21/3065 , C23F1/00 , G05B19/418 , G05B23/02 , H01L21/66 , H05H1/00
CPC分类号： H01L22/20 , G05B19/41875 , G05B23/0254 , G05B2219/31357 , G05B2219/32179 , G05B2219/32194 , G05B2219/45028 , G05B2219/45031 , H01J37/32935 , Y02P90/14 , Y02P90/22
摘要： A material processing system including a process tool and a process performance prediction system. The performance prediction system includes sensors coupled to the tool to measure tool data and a controller coupled to the sensors to receive tool data, where the controller is configured to predict the process performance for the tool using the tool data. A method for detecting a fault in a material processing system using a process performance prediction model is also provided. The method includes preparing the tool, initiating a process in the tool, and recording tool data to form to a tool data matrix. The method also includes performing a matrix multiplication of the tool data matrix and a correlation matrix to form predicted process performance data, where the correlation matrix includes the performance prediction model, comparing the predicted data with target data, and determining a fault condition of the processing system from the comparing step.
摘要翻译：一种材料处理系统，包括处理工具和处理性能预测系统。性能预测系统包括耦合到工具以测量工具数据的传感器和耦合到传感器以接收工具数据的控制器，其中控制器被配置为使用工具数据预测工具的工艺性能。还提供了一种使用过程性能预测模型来检测材料处理系统中的故障的方法。该方法包括准备工具，在工具中启动过程，以及记录工具数据以形成工具数据矩阵。该方法还包括执行工具数据矩阵和相关矩阵的矩阵乘法以形成预测过程性能数据，其中相关矩阵包括性能预测模型，将预测数据与目标数据进行比较，并且确定处理的故障状况系统从比较步骤。

4. 发明申请

WO2004105101A3 A PROCESS SYSTEM HEALTH INDEX AND METHOD OF USING THE SAME 审中-公开
标题翻译： A PROCESS SYSTEM HEALTH INDEX及其使用方法
公开(公告)号：WO2004105101A3
公开(公告)日：2005-01-27
申请号：PCT/US2004005240
申请日：2004-03-17
申请人： TOKYO ELECTRON LTD , YUE HONGYU , LAM HIEU A
发明人： YUE HONGYU , LAM HIEU A
IPC分类号： H01L21/00 , H01L21/66 , G01N21/00 , G06F19/00
CPC分类号： H01J37/3299 , H01J37/32935 , H01L21/67253 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： A method of monitoring a processing system for processing a substrate during the course of semiconductor manufacturing is described. The method comprises acquiring data from the processing system for a plurality of observations. It further comprises constructing a principal components analysis (PCA) model from the data, wherein a weighting factor is applied to at least one of the data variables in the acquired data. The PCA mode is utilized in conjunction with the acquisition of additional data, and at least one statistical quantity is determined for each additional observation. Upon setting a control limit for the processing system, the at least one statistical quantity is compared with the control limit for each additional observation. When, for example, the at least one statistical quantity exceeds the control limit, a fault for the processing system is detected.
摘要翻译：描述了在半导体制造过程中监视用于处理衬底的处理系统的方法。该方法包括从处理系统获取多个观察数据。其还包括从数据构建主成分分析（PCA）模型，其中对所获取的数据中的至少一个数据变量应用加权因子。 PCA模式与采集附加数据一起使用，并且每个附加观察确定至少一个统计量。在设置处理系统的控制限制时，将至少一个统计量与每个附加观察的控制限制进行比较。当例如至少一个统计量超过控制极限时，检测到处理系统的故障。

5. 发明申请

WO2004042788A3 METHOD AND APPARATUS FOR DETERMINING AN ETCH PROPERTY USING AN ENDPOINT SIGNAL 审中-公开
标题翻译：使用终点信号确定蚀刻性质的方法和装置
公开(公告)号：WO2004042788A3
公开(公告)日：2004-07-15
申请号：PCT/US0331528
申请日：2003-10-31
申请人： TOKYO ELECTRON LTD , YUE HONGYU , LAM HIEU A
发明人： YUE HONGYU , LAM HIEU A
IPC分类号： H01J37/32 , H05H1/00 , H01L21/00
CPC分类号： H01J37/32935 , H01J37/32963
摘要： The present invention presents a plasma processing system for etching a layer on a substrate comprising a process chamber, a diagnostic system coupled to the process chamber and configured to measure at least one endpoint signal, and a controller coupled to the diagnostic system and configured to determine in-situ at least one of an etch rate and an etch rate uniformity of the etching from the endpoint signal. Furthermore, an in-situ method of determining an etch property for etching a layer on a substrate in a plasma processing system is presented comprising the steps: providing a thickness of the layer; etching the layer on the substrate; measuring at least one endpoint signal using a diagnostic system coupled to the plasma processing system, wherein the endpoint signal comprises an endpoint transition; and determining the etch rate from a ratio of the thickness to a difference between a time during the endpoint transition and a starting time of the etching.
摘要翻译：本发明提出了一种用于蚀刻衬底上的层的等离子体处理系统，所述衬底包括处理室，耦合到处理室并且被配置为测量至少一个终点信号的诊断系统，以及耦合到诊断系统并被配置为确定从终点信号原位刻蚀蚀刻速率和蚀刻速率均匀性中的至少一个。此外，提出了一种确定用于在等离子体处理系统中在衬底上蚀刻层的蚀刻性质的原位方法，其包括以下步骤：提供所述层的厚度; 蚀刻衬底上的层; 使用耦合到所述等离子体处理系统的诊断系统测量至少一个端点信号，其中所述端点信号包括端点转变; 以及从厚度与端点转变期间的时间与蚀刻的开始时间之间的差异的比率来确定蚀刻速率。

6. 发明申请

WO2013019810A3 METHOD AND DEVICE FOR CONTROLLING PATTERN AND STRUCTURE FORMATION BY AN ELECTRIC FIELD 审中-公开
标题翻译：用电场控制图形和结构形成的方法和装置
公开(公告)号：WO2013019810A3
公开(公告)日：2013-05-02
申请号：PCT/US2012049040
申请日：2012-07-31
申请人： TOKYO ELECTRON LTD , BRCKA JOZEF , FAGUET JACQUES , LEE ERIC M , YUE HONGYU
发明人： BRCKA JOZEF , FAGUET JACQUES , LEE ERIC M , YUE HONGYU
IPC分类号： H01J37/32 , B03C5/00
CPC分类号： C23C16/50 , A61F2/00 , B03C5/005 , B03C5/026 , C12M3/00 , C12M21/08 , C12M33/00 , C23C16/04 , C23C16/48 , H01J37/32009 , H01J37/32697 , H01L21/02612 , H01L21/67011
摘要： A processing method and apparatus uses at least one electric field applicator (34) biased to produce a spatial-temporal electric field to affect a processing medium (26), suspended nano-objects (28) or the substrate (30) in processing, interacting with the dipole properties of the medium (26) or particles to construct structure on the substrate (30). The apparatus may include a magnetic field, an acoustic field, an optical force, or other generation device. The processing may affect selective localized layers on the substrate (30) or may control orientation of particles in the layers, control movement of dielectrophoretic particles or media, or cause suspended particles of different properties to follow different paths in the processing medium (26). Depositing or modifying a layer on the substrate (30) may be carried out. Further, the processing medium (26) and electrical bias may be selected to prepare at least one layer on the substrate (30) for bonding the substrate (30) to a second substrate, or to deposit carbon nanotubes (CNTs) with a controlled orientation on the substrate.
摘要翻译：处理方法和装置使用至少一个电场施加器（34），所述电场施加器被偏置以产生时空电场以影响处理介质（26），处理中的悬挂纳米物体（28）或衬底（30），相互作用与介质（26）或颗粒的偶极性质一起构造基底（30）上的结构。该装置可以包括磁场，声场，光学力或其他生成装置。该处理可以影响衬底（30）上的选择性局部化层或者可以控制层中的颗粒的取向，控制介电泳粒子或介质的移动，或者使不同性质的悬浮粒子遵循处理介质（26）中的不同路径。可以执行沉积或修改衬底（30）上的层。此外，可以选择处理介质（26）和电偏压以在衬底（30）上制备用于将衬底（30）键合到第二衬底的至少一个层或者以受控取向沉积碳纳米管（CNT）在衬底上。

7. 发明申请

WO2013019810A2 METHOD AND DEVICE FOR CONTROLLING PATTERN AND STRUCTURE FORMATION BY AN ELECTRIC FIELD 审中-公开
公开(公告)号：WO2013019810A2
公开(公告)日：2013-02-07
申请号：PCT/US2012049040
申请日：2012-07-31
申请人： TOKYO ELECTRON LTD , BRCKA JOZEF , FAGUET JACQUES , LEE ERIC M , YUE HONGYU
发明人： BRCKA JOZEF , FAGUET JACQUES , LEE ERIC M , YUE HONGYU
IPC分类号： H01J37/32
CPC分类号： C23C16/50 , A61F2/00 , B03C5/005 , B03C5/026 , C12M3/00 , C12M21/08 , C12M33/00 , C23C16/04 , C23C16/48 , H01J37/32009 , H01J37/32697 , H01L21/02612 , H01L21/67011
摘要： A processing method and apparatus uses at least one electric field applicator (34) biased to produce a spatial-temporal electric field to affect a processing medium (26), suspended nano-objects (28) or the substrate (30) in processing, interacting with the dipole properties of the medium (26) or particles to construct structure on the substrate (30). The apparatus may include a magnetic field, an acoustic field, an optical force, or other generation device. The processing may affect selective localized layers on the substrate (30) or may control orientation of particles in the layers, control movement of dielectrophoretic particles or media, or cause suspended particles of different properties to follow different paths in the processing medium (26). Depositing or modifying a layer on the substrate (30) may be carried out. Further, the processing medium (26) and electrical bias may be selected to prepare at least one layer on the substrate (30) for bonding the substrate (30) to a second substrate, or to deposit carbon nanotubes (CNTs) with a controlled orientation on the substrate.

8. 发明申请

WO2004074952A3 METHOD FOR AUTOMATIC CONFIGURATION OF A PROCESSING SYSTEM 审中-公开
标题翻译：一种加工系统的自动配置方法
公开(公告)号：WO2004074952A3
公开(公告)日：2005-02-24
申请号：PCT/US2004004175
申请日：2004-02-12
申请人： TOKYO ELECTRON LTD , LAM HIEU A , CHAMNESS KEVIN ANDREW , YUE HONGYU , FATKE DAVID , HARADA SATOSHI , HUME EDWARD CARL III , WILLIS JAMES EDWARD
发明人： LAM HIEU A , CHAMNESS KEVIN ANDREW , YUE HONGYU , FATKE DAVID , HARADA SATOSHI , HUME EDWARD CARL III , WILLIS JAMES EDWARD
IPC分类号： G05B19/418 , G06F19/00 , H01L21/66
CPC分类号： G05B19/41865 , G05B19/41845 , G05B2219/31334 , G05B2219/32191 , G05B2219/45031 , Y02P90/16 , Y02P90/185 , Y02P90/20 , Y02P90/22 , Y02P90/86
摘要： A method of automatically configuring an Advanced Process Control (APC) system for a semiconductor manufacturing environment in which an auto-configuration script is generated for executing an auto-configuration program. The auto-configuration script activates default values for input to the auto-configuration program. The auto-configuration script is executed to generate an enabled parameter file output from the auto-configuration program. The enabled parameter file identifies parameters for statistical process control (SPC) chart generation.
摘要翻译：一种自动配置用于半导体制造环境的高级过程控制（APC）系统的方法，其中生成用于执行自动配置程序的自动配置脚本。自动配置脚本激活自动配置程序输入的默认值。执行自动配置脚本以生成从自动配置程序输出的启用参数文件。启用的参数文件识别统计过程控制（SPC）图生成的参数。

9. 发明申请

WO2010033469A3 DIELECTRIC MATERIAL TREATMENT SAYSTEM AND METHOD OF OPERATING 审中-公开
标题翻译：介电材料处理系统和操作方法
公开(公告)号：WO2010033469A3
公开(公告)日：2010-05-14
申请号：PCT/US2009056871
申请日：2009-09-14
申请人： TOKYO ELECTRON LTD , LIU JUNJUN , FAGUET JACQUES , LEE ERIC M , TOMA DOREL I , YUE HONGYU
发明人： LIU JUNJUN , FAGUET JACQUES , LEE ERIC M , TOMA DOREL I , YUE HONGYU
IPC分类号： B05D3/06 , B05B5/025 , C23C14/28
CPC分类号： H01L21/2686 , H01L21/67115 , H01L21/67184 , H01L21/67207
摘要： A system for curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The system comprises one or more process modules configured for exposing the low-k dielectric film to electromagnetic (EM) radiation, such as infrared (IR) radiation and ultraviolet (UV) radiation.
摘要翻译：描述了一种用于固化衬底上的低介电常数（低k）电介质膜的系统，其中低k电介质膜的介电常数小于大约4的值。该系统包括一个或多个配置成用于将低k电介质膜暴露于电磁（EM）辐射，例如红外（IR）辐射和紫外（UV）辐射。

10. 发明申请

WO2005104216A2 PROCESSING SYSTEM AND METHOD FOR TREATING A SUBSTRATE 审中-公开
标题翻译：处理系统和处理基板的方法
公开(公告)号：WO2005104216A2
公开(公告)日：2005-11-03
申请号：PCT/US2005004037
申请日：2005-02-08
申请人： TOKYO ELECTRON LTD , HIGUCHI FUMIHIKO , TAKAHASHI HIROYUKI , KO AKITERU , YUE HONGYU , YAMASHITA ASAO , KAMBARA HIROMITSU
发明人： HIGUCHI FUMIHIKO , TAKAHASHI HIROYUKI , KO AKITERU , YUE HONGYU , YAMASHITA ASAO , KAMBARA HIROMITSU
IPC分类号： H01L21/311 , H01L21/66
CPC分类号： H01L22/20 , H01L21/31116 , H01L2924/0002 , H01L2924/00
摘要： A method and system for trimming a feature on a substrate is described. During a chemical treatment of the substrate, the substrate is exposed to a gaseous chemistry, such as HF/NH3, under controlled conditions including surface temperature and gas pressure. An inert gas is also introduced, and the flow rate of the inert gas is selected in order to affect a target trim amount during the trimming of the feature.
摘要翻译：描述了用于修剪基底上的特征的方法和系统。在衬底的化学处理期间，衬底在包括表面温度和气体压力的受控条件下暴露于气体化学物质，例如HF / NH 3。还引入惰性气体，并且选择惰性气体的流量以在修剪特征期间影响目标修整量。

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