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    • 3. 发明申请
    • EXPANSION-TYPE REFLECTION MIRROR
    • 扩展型反射镜
    • WO2005027186A2
    • 2005-03-24
    • PCT/JP2004013488
    • 2004-09-09
    • NIPPON TELEGRAPH & TELEPHONEHARADA SATOSHIMEGURO AKIRAISHIKAWA HIRONORIOZAWA SATORU
    • HARADA SATOSHIMEGURO AKIRAISHIKAWA HIRONORIOZAWA SATORU
    • G02B7/182G02B7/183H01L20060101H01Q1/28H01Q15/16H01Q15/20H01L
    • G02B7/183H01Q1/288H01Q15/162
    • An expansion-type reflection mirror has connecting members that are installed between extendable members constructing an expansion truss. Each connection member connects a portion corresponding to an antinode of and a portion corresponding to a node of a bucking mode occurring in extendable members when tensile force is applied to surface cable. Further, the surface cable is composed of inner surface cable and outer periphery surface cable that is joined to the outer periphery of the inner surface cable. Cable having high rigidity and whose length varies a little when tensile force varies is used as the inner surface cable. As the outer periphery surface cable, cable having lower rigidity than the inner surface cable and whose tensile force varies less than the inner surface cable when the length varies is used. Tensile force is applied from the expansion truss to the inner surface cable through the outer periphery surface cable to form a predetermined mirror surface shape.
    • 扩展型反射镜具有安装在构成展开桁架的可伸展构件之间的连接构件。 当拉力施加到表面电缆时,每个连接构件连接对应于可伸展构件中发生的弯曲模式的节点的波腹和对应于该节点的部分。 此外,表面电缆由内表面电缆和与内表面电缆的外周接合的外周表面电缆构成。 作为内表面电缆,使用刚性高,拉伸力变化时长度变化少的电缆。 作为外周表面电缆,使用具有比内表面电缆更低的刚性并且当长度变化时其张力变化小于内表面电缆的电缆。 从膨胀桁架通过外周表面缆线向内表面缆线施加拉伸力以形成预定的镜面形状。
    • 6. 发明专利
    • Method of predicting process and treatment apparatus
    • JP2004039805A
    • 2004-02-05
    • JP2002193624
    • 2002-07-02
    • Tokyo Electron Ltd東京エレクトロン株式会社
    • HARADA SATOSHI
    • H01L21/3065G05B23/02
    • PROBLEM TO BE SOLVED: To solve the problem that, since a predicted value by a model formula created before cleaning largely deviates from a set value in a plasma treatment apparatus 1 after cleaning, process parameters of the plasma treatment apparatus 1 after cleaning cannot be predicated using the model formula created before cleaning as it is. SOLUTION: A method of predicting a process comprises steps of creating a principal component analysis model, by carrying out the principal component analysis of a plurality of detection data obtained from standard treatments conducted on a plurality of wafers using the plasma treatment apparatus 1 before cleaning and finding a residual as a first residual; finding a second residual by the principal component analysis model using a plurality of detection data obtained from the standard treatments conducted on the wafers using the plasma treatment apparatus 1 after cleaning; selecting the detection data wherein a variance in the second residual is small, with maximum and minimum values of a variance of the first residual as references; and creating a multiple regression model using residuals of a plurality of selected detection data. COPYRIGHT: (C)2004,JPO
    • 8. 发明专利
    • Method for detecting abnormality of processor
    • JP2004047501A
    • 2004-02-12
    • JP2002169465
    • 2002-06-11
    • Tokyo Electron Ltd東京エレクトロン株式会社
    • SAKANO SHINJIHARADA SATOSHI
    • H01L21/3065
    • PROBLEM TO BE SOLVED: To solve the problem wherein important abnormalities cannot be detected for all wafers, because a baseline formed by the residual scores of each wafer subjected to maintenance and inspection deviates from a baseline formed by the residual scores of each wafer not being subjected to maintenance and inspection, and because it exceeds abnormality decision line and decides the process of a processor as being abnormal.
      SOLUTION: The method for detecting abnormalities comprises a step for obtaining the emission intensity S of a plasma being detected for each of a plurality of wafers using an end point detector 19 which is not subjected to maintenance and inspection as first operation data; a step for determining a residual matrix by analyzing the main components of the first operation data; a step for setting the abnormality decision line L of a processor based on the square sum (residual score) of the residual components of the residual matrix; a step for obtaining the emission intensity S being detected for each wafer, using a detector subjected to maintenance and inspection as second operation data; a step for determining a residual matrix, based on the analysis of main component of the second operation data; and a step for determining a residual score by comparing the second operation data with the first operation data and selecting the operation data, having a smaller variation of residue.
      COPYRIGHT: (C)2004,JPO