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1. 发明申请

WO2010033469A3 DIELECTRIC MATERIAL TREATMENT SAYSTEM AND METHOD OF OPERATING 审中-公开
标题翻译：介电材料处理系统和操作方法
公开(公告)号：WO2010033469A3
公开(公告)日：2010-05-14
申请号：PCT/US2009056871
申请日：2009-09-14
申请人： TOKYO ELECTRON LTD , LIU JUNJUN , FAGUET JACQUES , LEE ERIC M , TOMA DOREL I , YUE HONGYU
发明人： LIU JUNJUN , FAGUET JACQUES , LEE ERIC M , TOMA DOREL I , YUE HONGYU
IPC分类号： B05D3/06 , B05B5/025 , C23C14/28
CPC分类号： H01L21/2686 , H01L21/67115 , H01L21/67184 , H01L21/67207
摘要： A system for curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The system comprises one or more process modules configured for exposing the low-k dielectric film to electromagnetic (EM) radiation, such as infrared (IR) radiation and ultraviolet (UV) radiation.
摘要翻译：描述了一种用于固化衬底上的低介电常数（低k）电介质膜的系统，其中低k电介质膜的介电常数小于大约4的值。该系统包括一个或多个配置成用于将低k电介质膜暴露于电磁（EM）辐射，例如红外（IR）辐射和紫外（UV）辐射。

2. 发明申请

WO2009111473A3 METHOD FOR CURING A POROUS LOW DIELECTRIC CONSTANT DIELECTRIC FILM 审中-公开
标题翻译：用于固化多孔低介电常数电介质膜的方法
公开(公告)号：WO2009111473A3
公开(公告)日：2010-01-14
申请号：PCT/US2009035878
申请日：2009-03-03
申请人： TOKYO ELECTRON LTD , LIU JUNJUN , TOMA DOREL I , LEE ERIC M
发明人： LIU JUNJUN , TOMA DOREL I , LEE ERIC M
IPC分类号： H01L21/00
CPC分类号： H01L21/31695 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02271 , H01L21/02345 , H01L21/02348 , H01L21/3105
摘要： A method of curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The method comprises exposing the low-k dielectric film to infrared (IR) radiation and ultraviolet (UV) radiation.
摘要翻译：描述了在基底上固化低介电常数（低k）电介质膜的方法，其中低k电介质膜的介电常数小于约4的值。该方法包括使低k电介质膜对红外（IR）辐射和紫外线（UV）辐射。

3. 发明申请

WO2007040816A2 TREATMENT OF LOW DIELECTRIC CONSTANT FILMS USING A BATCH PROCESSING SYSTEM 审中-公开
标题翻译：用间歇处理系统处理低介电常数薄膜
公开(公告)号：WO2007040816A2
公开(公告)日：2007-04-12
申请号：PCT/US2006030848
申请日：2006-08-08
申请人： TOKYO ELECTRON LTD , LEE ERIC M , TOMA DOREL I
发明人： LEE ERIC M , TOMA DOREL I
IPC分类号： H01L21/31 , H01L21/20 , H01L21/469
CPC分类号： H01L21/3105 , H01L21/02063 , H01L21/31058 , H01L21/76814 , H01L21/76826 , H01L21/76828
摘要： A method and system for treating a dielectric film in a batch processing system includes exposing at least one surface of the dielectric film to a treating compound including a CxHy containing compound, where x and y represent integers greater than or equal to unity. The plurality of wafers are heated when the treating compound is introduced. The dielectric film can include a low dielectric constant film with or without pores having an etch feature formed therein following dry etch processing.
摘要翻译：用于在批处理系统中处理介电膜的方法和系统包括将介电膜的至少一个表面暴露于包含含C x H y化合物的处理化合物，其中x和y表示大于或等于1的整数。当引入处理化合物时，多个晶片被加热。介电膜可以包括具有或不具有在干蚀刻处理之后形成有蚀刻特征的孔的低介电常数膜。

4. 发明申请

WO2007040834A3 PLURAL TREATMENT STEP PROCESS FOR TREATING DIELECTRIC FILMS 审中-公开
标题翻译：多媒体处理步骤处理电介质膜
公开(公告)号：WO2007040834A3
公开(公告)日：2007-08-16
申请号：PCT/US2006031773
申请日：2006-08-15
申请人： TOKYO ELECTRON LTD , LEE ERIC M , TOMA DOREL I
发明人： LEE ERIC M , TOMA DOREL I
IPC分类号： H01L21/31
CPC分类号： H01L21/3105 , H01L21/02063 , H01L21/31058 , H01L21/76814 , H01L21/76826 , H01L21/76828
摘要： A method and computer readable medium for treating a dielectric film on one or more substrates includes disposing the one or more substrates in a process chamber configured to perform plural treatment processes on a dielectric film. The dielectric film is formed on at least one of said one or more substrates, wherein the dielectric film includes an initial dielectric constant having a value less than the dielectric constant of SiO 2 . A thermal treatment process that includes annealing the one or more substrates is performed in order to remove volatile constituents from the dielectric film on the one or more substrates and a chemical treatment process is performed on the one or more substrates, including: introducing a treating compound to the dielectric film on the one or more substrates, and heating the one or more substrates.
摘要翻译：用于处理一个或多个衬底上的电介质膜的方法和计算机可读介质包括将所述一个或多个衬底放置在配置成在电介质膜上执行多个处理工艺的处理室中。电介质膜形成在所述一个或更多个衬底中的至少一个衬底上，其中电介质膜包括初始介电常数，该初始介电常数的值小于SiO _{2 的介电常数。执行包括退火所述一个或多个衬底的热处理工艺，以从所述一个或多个衬底上的电介质膜中去除挥发性成分，并且在所述一个或多个衬底上执行化学处理工艺，包括：将处理化合物到一个或多个衬底上的电介质膜，并且加热一个或多个衬底。}

5. 发明申请

WO2007040856A3 PLASMA-ASSISTED VAPOR PHASE TREATMENT OF LOW DIELECTRIC CONSTANT FILMS USING A BATCH PROCESSING SYSTEM 审中-公开
标题翻译：使用批处理系统的低介电常数膜的等离子体辅助蒸汽相处理
公开(公告)号：WO2007040856A3
公开(公告)日：2007-11-22
申请号：PCT/US2006032766
申请日：2006-08-23
申请人： TOKYO ELECTRON LTD , LEE ERIC M , TOMA DOREL I
发明人： LEE ERIC M , TOMA DOREL I
IPC分类号： C23C16/00 , H01L21/306 , H01L21/31
CPC分类号： H01L21/02063 , H01L21/3105 , H01L21/31058 , H01L21/76814 , H01L21/76826 , H01L21/76831
摘要： A method and system for treating a dielectric film on a plurality of substrates includes disposing the plurality of substrates in a batch processing system, the dielectric film on the plurality of substrates having a dielectric constant value less than the dielectric constant of SiO 2 . The plurality of substrates are heated, and a treating compound comprising a C x H y containing compound, wherein x and y represent integers greater than or equal to unity is introduced to the process system. A plasma is formed and at least one surface of the dielectric film on said plurality of substrates is exposed to the plasma.
摘要翻译：用于处理多个基板上的电介质膜的方法和系统包括将多个基板设置在间歇处理系统中，多个基板上的电介质膜的介电常数值小于SiO 2的介电常数。将多个基板加热，并且将包含含有大于或等于1的整数的包含化合物的处理化合物引入到过程系统。形成等离子体，并且将所述多个基板上的电介质膜的至少一个表面暴露于等离子体。

6. 发明专利

DE112009000518T5 Verfahren zum Aushärten eines porösen dielektrischen Films mit niedriger Dielektrizitätskonstante 未知
公开(公告)号：DE112009000518T5
公开(公告)日：2011-05-05
申请号：DE112009000518
申请日：2009-03-03
申请人： TOKYO ELECTRON LTD
发明人： LIU JUNJUN , TOMA DOREL I , LEE ERIC M
IPC分类号： H01L21/3105 , H01L21/268

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