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1. 发明申请

WO2014208365A2 ETCHING METHOD, AND RECORDING MEDIUM 审中-公开
标题翻译：蚀刻方法和记录介质
公开(公告)号：WO2014208365A2
公开(公告)日：2014-12-31
申请号：PCT/JP2014065736
申请日：2014-06-13
申请人： TOKYO ELECTRON LTD
发明人： TOZAWA SHIGEKI , OGIWARA TOMOAKI
IPC分类号： H01L21/302
CPC分类号： H01L21/31116
摘要： This etching method has: a transforming step in which a mixed gas is supplied to the surface of a silicon oxide film, and the silicon oxide film is transformed to generate a reaction product; and a heating step in which the reaction product is heated and removed. The transforming step has a first transforming step in which a mixed gas containing a basic gas and a halogen-containing gas is supplied to the surface of the silicon oxide film, and a second transformation step in which the supply of the basic gas is stopped and a mixed gas containing the halogen-containing gas is supplied to the surface of the silicon oxide film.
摘要翻译：该蚀刻方法具有：向氧化硅膜的表面供给混合气体，转化氧化硅膜而生成反应产物的变换工序; 和加热步骤，其中加热和除去反应产物。变换步骤具有第一变换步骤，其中含有碱性气体和含卤素气体的混合气体被供应到氧化硅膜的表面，以及第二转化步骤，其中碱性气体的供应停止，含有含卤素气体的混合气体被供给到氧化硅膜的表面。

2. 发明专利

AU8020001A Magnetic field generator for magnetron plasma, and plasma etching apparatus and method comprising the magnetic field generator 未知
公开(公告)号：AU8020001A
公开(公告)日：2002-03-22
申请号：AU8020001
申请日：2001-08-28
申请人： SHINETSU CHEMICAL CO , TOKYO ELECTRON LTD
发明人： MIYATA KOJI , HIROSE JUN , KODASHIMA AKIRA , TOZAWA SHIGEKI , KUBOTA KAZUHIRO , CHIBA YUKI
IPC分类号： H01J37/34 , H01L21/3065 , H05H1/46
摘要： In a magnetic field generator for magnetron plasma generation which comprises a dipole-ring magnet with a plurality of columnar anisotropic segment magnets arranged in a ring-like manner, or in an etching apparatus and a method both of which utilize the magnetic field generator, the uniformity of plasma treatment over the entire surface of a wafer (workpiece) is improved by controlling the direction of the magnetic field relative to the working surface of the wafer (workpiece) which is subject to plasma treatment such as etching.

3. 发明公开

EP1329947A4 MAGNETIC FIELD GENERATOR FOR MAGNETRON PLASMA, AND PLASMA ETCHING APPARATUS AND METHOD COMPRISING THE MAGNETIC FIELD GENERATOR 有权
标题翻译： FOR PLASMA MAGNETON磁场发生器和等离子体蚀刻AND METHOD WITH磁场发生器
公开(公告)号：EP1329947A4
公开(公告)日：2008-08-20
申请号：EP01958549
申请日：2001-08-28
申请人： SHINETSU CHEMICAL CO , TOKYO ELECTRON LTD
发明人： MIYATA KOJI , HIROSE JUN , KODASHIMA AKIRA , TOZAWA SHIGEKI , KUBOTA KAZUHIRO , CHIBA YUKI
IPC分类号： H01J37/34 , H01L21/3065 , H05H1/46
CPC分类号： H01J37/3266 , H01J37/3408
摘要： In a magnetic field generator for magnetron plasma generation which comprises a dipole-ring magnet with a plurality of columnar anisotropic segment magnets arranged in a ring-like manner, or in an etching apparatus and a method both of which utilize the magnetic field generator, the uniformity of plasma treatment over the entire surface of a wafer (workpiece) is improved by controlling the direction of the magnetic field relative to the working surface of the wafer (workpiece) which is subject to plasma treatment such as etching.

4. 发明专利

JP2009182175A Method for forming resist pattern, and recording medium 有权
标题翻译：形成电阻图案和记录介质的方法
公开(公告)号：JP2009182175A
公开(公告)日：2009-08-13
申请号：JP2008020285
申请日：2008-01-31
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： TOZAWA SHIGEKI , NAKAMORI MITSUNORI
IPC分类号： H01L21/027
摘要： PROBLEM TO BE SOLVED: To form a resist pattern without causing a sidewall spacer to fall down.
SOLUTION: A method for forming the resist pattern F' on a base film C formed on a surface of a substrate W includes steps of: forming a sacrificial film D of silicon oxide on the base film C; processing the sacrificial film D in a prescribed pattern; forming the sidewall spacer F' made of a material other than the silicon oxide on the sidewall of the sacrificial film D processed in a prescribed pattern; and removing the sacrificial film D processed in the prescribed pattern. The step of removing the sacrificial film D includes: a step of changing the sacrificial film D into reaction products by holding the substrate W at first processing temperature, supplying a gas containing a halogen element and a basic gas and subjecting the sacrificial film D, and the gas containing the halogen element and basic gas to chemical reaction; and a step of selectively removing the sacrificial film D changed into the reaction products by holding the substrate W at the second processing temperature higher than the first processing temperature.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：形成抗蚀剂图案而不会使侧壁间隔件掉落。解决方案：在形成在基板W的表面上的基膜C上形成抗蚀剂图案F'的方法包括以下步骤：在基膜C上形成氧化硅牺牲膜D; 以规定的图案处理牺牲膜D; 在预定图案处理的牺牲膜D的侧壁上形成由氧化硅以外的材料制成的侧壁间隔物F'; 并且去除以规定图案加工的牺牲膜D. 去除牺牲膜D的步骤包括：通过将衬底W保持在第一处理温度将牺牲膜D改变成反应产物的步骤，提供含有卤素元素和碱性气体的气体并对牺牲膜D进行处理，以及含有卤素元素和碱性气体的气体进行化学反应; 并且通过将衬底W保持在高于第一处理温度的第二处理温度，将牺牲膜D选择性地除去而变成反应产物的步骤。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2009064956A Manufacturing method for semiconductor device and semiconductor device 有权
标题翻译：半导体器件和半导体器件的制造方法
公开(公告)号：JP2009064956A
公开(公告)日：2009-03-26
申请号：JP2007231408
申请日：2007-09-06
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： MURAKI YUSUKE , TOZAWA SHIGEKI
IPC分类号： H01L21/76 , H01L21/316 , H01L21/8242 , H01L27/08 , H01L27/108 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To obtain an element isolation structure with high isolation performance by using a hybrid implant process.
SOLUTION: This manufacturing method concerns a semiconductor device 1 having an element isolation structure 13 for isolating one transistor from another, wherein the process of forming the element isolation structure 13 includes steps of: implanting a primary insulating part 32 in the bottom of a groove 15 formed in a substrate W; and also implanting a secondary insulating part 34 on the primary insulating part 32, and the step of implanting the primary insulating part 32 in the bottom of the groove 15 has sub-steps of: film forming a material 31 of the primary insulating part 32 on the surface of the substrate W; removing the material 31 of the primary insulating part 32 from the upper part of the groove 15; and also removing a residual layer 32a of the material 31 of the primary insulating part 32 from the inner wall of the groove 15 in the upper part of the groove 15.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：通过使用混合植入工艺来获得具有高隔离性能的元件隔离结构。解决方案：该制造方法涉及具有用于将一个晶体管与另一个晶体管隔离的元件隔离结构13的半导体器件1，其中形成元件隔离结构13的工艺包括以下步骤：将第一绝缘部分32植入到形成在基板W中的槽15; 并且还在第一绝缘部分32上注入次级绝缘部分34，并且将主绝缘部分32植入槽15的底部的步骤具有以下子步骤：将主绝缘部分32的材料31成膜衬底W的表面; 从第一绝缘部分32的材料31脱离槽15的上部; 并且还从槽15的上部的槽15的内壁去除主绝缘部32的材料31的残留层32a。（C）2009，JPO＆INPIT

6. 发明专利

JP2008166513A Method of manufacturing capacitor electrode, method of etching and etching system, and storage medium 有权
标题翻译：制造电容器电极的方法，蚀刻和蚀刻系统的方法以及存储介质
公开(公告)号：JP2008166513A
公开(公告)日：2008-07-17
申请号：JP2006354775
申请日：2006-12-28
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： MURAKI YUSUKE , TOZAWA SHIGEKI
IPC分类号： H01L21/8242 , H01L21/306 , H01L21/3065 , H01L21/768 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a capacitor electrode which can substantially solve a leaning problem while securing a desired etch rate. SOLUTION: The method of manufacturing the capacitor electrode includes a step of forming a hole by etching a silicon oxide film formed on a wafer, a step of forming a conductor film on the internal surface of the hole, and a step of exposing the conductor film by removing the silicon oxide film to turn the conductor film into the capacitor electrode. In the step of exposing the conductor film by removing the silicon oxide film, the silicon oxide film is removed halfway by a wet process using a chemical and then the remaining part of the silicon oxide film is removed by a dry process using a gas. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造电容器电极的方法，其可以在确保期望的蚀刻速率的同时基本上解决倾斜问题。解决方案：制造电容器电极的方法包括通过蚀刻形成在晶片上的氧化硅膜形成空穴的步骤，在孔的内表面上形成导体膜的步骤和暴露的步骤通过去除氧化硅膜以将导体膜转变成电容器电极来形成导体膜。在通过去除氧化硅膜来暴露导体膜的步骤中，通过使用化学品的湿法将半氧化硅膜去除，然后通过使用气体的干法除去剩余部分的氧化硅膜。版权所有（C）2008，JPO＆INPIT

7. 发明专利

JP2008160000A Gas processing apparatus, gas processing method, and storage medium 有权
标题翻译：气体加工设备，气体加工方法和储存介质
公开(公告)号：JP2008160000A
公开(公告)日：2008-07-10
申请号：JP2006349479
申请日：2006-12-26
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： MURAKI YUSUKE , TOZAWA SHIGEKI
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , H01L21/02057 , H01L21/67173 , H01L21/67742 , H01L21/67745 , H01L21/67748
摘要： PROBLEM TO BE SOLVED: To provide a gas processing apparatus that reduces variation in gas processing from one processed body to another without having to run a dummy, even when a gas is used that adsorbs to the chamber. SOLUTION: The gas processing apparatus has a chamber 40 that holds a wafer W in it, a carrying mechanism 17 for carrying processed bodies to the chamber 40 one by one, a gas supply mechanism for supplying an adsorbent raw gas for doing gassing on the wafer W in the chamber 40, and a controller 90 that controls the gas supply mechanism and the carrying mechanism, such that the processing gas is introduced into the chamber, before the first processed body is carried into the chamber; and then the first processed body is carried into the chamber, after a prescribed period of time. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种气体处理装置，即使使用吸附到室的气体，也可以减少气体处理从一个被处理体到另一个处理体的变化，而不必运行虚拟物。解决方案：气体处理装置具有将晶片W保持在其中的室40，用于将处理体一个接一个地输送到室40的输送机构17，用于供给用于进行放气的吸附剂原料气体的气体供给机构在室40中的晶片W上，以及控制器90，其控制气体供给机构和承载机构，使得处理气体在第一加工体被运送到室内之前被引入室中; 然后在规定的时间之后将第一加工体运送到室中。版权所有（C）2008，JPO＆INPIT

8. 发明专利

JP2007208042A Decompression processing apparatus 有权
标题翻译：分解处理设备
公开(公告)号：JP2007208042A
公开(公告)日：2007-08-16
申请号：JP2006025660
申请日：2006-02-02
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： TOZAWA SHIGEKI , MURAKI YUSUKE , IINO TADASHI
IPC分类号： H01L21/302
CPC分类号： H01L21/6719 , H01L21/67017 , H01L21/67201 , H01L21/67207
摘要： PROBLEM TO BE SOLVED: To provide a decompression processing apparatus equipped with a gas discharge mechanism which can securely collect reaction products being difficult to collect under a reduced pressure.
SOLUTION: In the decompression processing mechanism 44 on the gas discharge path 85 connected to a chamber 40 of the COR processing apparatus 5 from upstream toward down stream, a dry pump 83 and a trap unit 87 are arranged in this sequence. Exhaust gas heated up to the temperature of, for example, 60-100°C by an electric heater 93 passes the dry pump 83, the deposit and the collection of reaction products are carried out in the trap unit 87 of the atmosphere pressure state.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供一种装有气体排出机构的减压处理装置，其能够可靠地收集在减压下难以收集的反应产物。解决方案：在从上游到下游连接到COR处理设备5的室40的气体排放路径85上的减压处理机构44中，按顺序排列干泵83和捕集单元87。通过电加热器93加热到例如60-100℃的排气通过干式泵83，在大气压力状态的捕集单元87中进行沉积物和反应产物的收集。版权所有（C）2007，JPO＆INPIT

9. 发明专利

JP2015008199A エッチング方法及び記録媒体有权
标题翻译：蚀刻方法和储存介质
公开(公告)号：JP2015008199A
公开(公告)日：2015-01-15
申请号：JP2013132530
申请日：2013-06-25
申请人：東京エレクトロン株式会社 , Tokyo Electron Ltd
发明人： TOZAWA SHIGEKI , OGIWARA TOMOAKI
IPC分类号： H01L21/302
CPC分类号： H01L21/31116
摘要：【課題】ウェハに形成されたシリコン酸化膜を均一、かつ、十分にエッチングできるエッチング方法を提供する。【解決手段】シリコン酸化膜の表面に混合ガスを供給し、前記シリコン酸化膜と前記混合ガスとを化学反応させ、前記シリコン酸化膜を変質させて反応生成物を生成させる変質工程と、前記反応生成物を加熱して除去する加熱工程とを有するシリコン酸化膜のエッチング方法において、前記変質工程を前記シリコン酸化膜の表面に、ハロゲン元素を含むガスと塩基性ガスとを含有した混合ガスを供給する第1の変質工程と、前記塩基性ガスの供給を停止し、前記シリコン酸化膜の表面にハロゲン元素を含むガスを含有した混合ガスを供給する第2の変質工程から構成する。【選択図】図9
摘要翻译：要解决的问题：提供能够均匀且充分地蚀刻形成在晶片上的氧化硅膜的蚀刻方法。解决方案：氧化硅膜的蚀刻方法包括：将混合气体供给到表面的改变方法氧化硅膜，并使氧化硅膜与混合气体化学反应，以改变氧化硅膜从而产生反应产物; 以及加热和除去反应产物的加热过程。改变方法包括向氧化硅膜的表面供给含有含卤素气体和碱性气体的混合气体的第一改质方法; 以及停止供给碱性气体并将含有含卤素气体的混合气体供给到氧化硅膜的表面的第二改变处理。

10. 发明专利

JP2012049566A Etching method, etching system and etching apparatus 有权
标题翻译：蚀刻方法，蚀刻系统和蚀刻装置
公开(公告)号：JP2012049566A
公开(公告)日：2012-03-08
申请号：JP2011256191
申请日：2011-11-24
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： TOZAWA SHIGEKI , MURAKI YUSUKE
IPC分类号： H01L21/3065 , H01L21/302 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To form a hole having a high aspect ratio and reaching a contact part in a silicon oxide film, which enables a sufficient contact to be made between a contact material in the hole and the contact part.SOLUTION: The method comprises: (Step 1) preparing a subject of processing which has, on a substrate, a first oxide film made of silicon oxide containing at least one of B and P, a second oxide film formed thereon and made of silicon oxide containing neither B nor P, and a contact part formed below an interface of the first and second oxide films; (Step 2) etching the second and first oxide films to form a hole reaching the contact part; and (Step 3) etching the first oxide film by a dry process using HF gas and inert gas to widen part of the hole in a region over the contact part of the first oxide film.
摘要翻译：要解决的问题：为了在氧化硅膜中形成具有高纵横比并到达接触部分的孔，能够在孔中的接触材料和接触部分之间形成充分的接触。解决方案：该方法包括：（1）制备在衬底上具有由含有B和P中的至少一种的氧化硅制成的第一氧化膜的处理对象，形成在其上的第二氧化膜不含B和P的氧化硅，以及形成在第一和第二氧化物膜的界面之下的接触部分; （步骤2）蚀刻第二和第一氧化物膜以形成到达接触部分的孔; 和（步骤3）通过使用HF气体和惰性气体的干法来蚀刻第一氧化物膜，以在第一氧化物膜的接触部分上的区域中加宽孔的一部分。版权所有（C）2012，JPO＆INPIT

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