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1. 发明申请

WO2005078730A1 NON-SWITCHING PRE-AND POST-DISTURB COMPENSATIONAL PULSES 审中-公开
标题翻译：非开关预失真和补偿补偿脉冲
公开(公告)号：WO2005078730A1
公开(公告)日：2005-08-25
申请号：PCT/NO2005/000044
申请日：2005-02-07
申请人： THIN FILM ELECTRONICS ASA , KARLSSON, Christer , HAMBERG, Per , BJÖRKLID, Staffan , THOMPSON, Michael, O. , WOMACK, Richard
发明人： KARLSSON, Christer , HAMBERG, Per , BJÖRKLID, Staffan , THOMPSON, Michael, O. , WOMACK, Richard
IPC分类号： G11C11/22
CPC分类号： G11C11/22
摘要： In a method for operating a passive matrix-addessable ferroelectric or electret memory device comprising memory cells in the form of a ferroelectric or electret thin-film polarizable memory material exhibiting hysteresis, particularly a ferroelectric or electret polymer thin film, and a first set of parallel electrodes forming word line electrodes in the device and a second set of parallel electrodes forming bit lines in the device, the word lines being oriented orthogonally to the bit lines, such that the word lines and bit lines are in direct contact with the memory cells, which can be set to either of two polarization states or switched between these by applying a switching voltage larger than a coercive voltage of the memory material between a word line and a bit line, a voltage pulse protocol with at least one disturb generating operation cycle is applied for switching selected addressed cells to determined polarization state. The voltage pulse protocol further comprises a pre-disturb and/or post-disturb cycle before and after the disturb generating operation cycle respectively in order to minimize the effect of disturb voltages on non-addressed memory cells, when such voltages are generated thereto in the operation cycle when it is applied for either a write or read operation.
摘要翻译：在一种用于操作无源矩阵可加性铁电或驻极体存储器件的方法中，该器件包括呈现滞后性的铁电或驻极体薄膜可极化存储材料形式的存储单元，特别是铁电或驻极体聚合物薄膜，以及第一组平行在器件中形成字线电极的电极和在器件中形成位线的第二组并联电极，字线与位线正交定向，使得字线和位线与存储器单元直接接触，通过施加大于字线和位线之间的存储材料的矫顽电压的开关电压，可将其设置为两个极化状态中的任一个或在其之间切换，具有至少一个干扰产生操作周期的电压脉冲协议是用于将所选择的寻址单元切换到确定的极化状态。电压脉冲协议还包括在干扰产生操作周期之前和之后的预先干扰和/或干扰后周期，以便最小化干扰电压对非寻址存储器单元的影响，当在其中产生这样的电压时当它被应用于写入或读取操作时的操作周期。

2. 发明申请

WO2005050657A1 METHOD FOR OPERATING A DATA STORAGE APPARATUS EMPLOYING PASSIVE MATRIX ADDRESSING 审中-公开
标题翻译：使用被动矩阵寻址的数据存储设备的操作方法
公开(公告)号：WO2005050657A1
公开(公告)日：2005-06-02
申请号：PCT/NO2004/000361
申请日：2004-11-24
申请人： THIN FILM ELECTRONICS ASA , HAMBERG, Per , KARLSSON, Christer , NORDAL, Per-Erik , OJAKANGAS, Nicklas , CARLSSON, Johan , GUDESEN, Hans, Gude
发明人： HAMBERG, Per , KARLSSON, Christer , NORDAL, Per-Erik , OJAKANGAS, Nicklas , CARLSSON, Johan , GUDESEN, Hans, Gude
IPC分类号： G11C8/06
CPC分类号： G11C11/22 , G06F12/0238 , G06F2212/1036 , G06F2212/7211 , G11C8/12 , G11C2013/0083
摘要： In a method for reducing detrimental phenomena related to disturb voltages in a data storage apparatus employing passive matrix addressing, particularly a memory device or a sensor device, an application of electric potentials conforming to an addressing operation is generally controlled in a time-coordinated manner according to a voltage pulse protocol. In an addressing operation a data storage cell is set to a first polarization state by means of a first active voltage pulse and then, dependent on the voltage pulse protocol, a second voltage pulse which may be a second active voltage pulse of opposite polarity to that of the first voltage pulse, is applied and used for switching the data storage cell to a second polarization state. The addressed cell is thus set to a predetermined polarization state as specified by the addressing operation. The data storage cells of the apparatus are provided in two or more electrically separated segments such that each segment comprises a separate physical address space for the apparatus. In an addressing operation the data are directed to a segment that is selected based on information on prior and/or scheduled applications of active voltage pulses to the segments.
摘要翻译：在采用无源矩阵寻址的数据存储装置，特别是存储装置或传感器装置中减少与干扰电压有关的有害现象的方法中，通常按时间协调方式控制符合寻址操作的电位的应用，到电压脉冲协议。在寻址操作中，通过第一有效电压脉冲将数据存储单元设置为第一偏振状态，然后根据电压脉冲协议设置第二电压脉冲，该第二电压脉冲可以是具有相反极性的第二有源电压脉冲的第一电压脉冲被施加并用于将数据存储单元切换到第二极化状态。因此，所寻址的单元被设置为由寻址操作指定的预定极化状态。设备的数据存储单元被提供在两个或更多个电分离的段中，使得每个段包括用于该设备的单独的物理地址空间。在寻址操作中，数据被引导到基于关于有效电压脉冲到段的先前和/或预定应用的信息而被选择的段。

3. 发明申请

WO2006033581A1 READ METHOD AND SENSING DEVICE 审中-公开
标题翻译：读取方法和传感设备
公开(公告)号：WO2006033581A1
公开(公告)日：2006-03-30
申请号：PCT/NO2005/000347
申请日：2005-09-21
申请人： THIN FILM ELECTRONICS ASA , KARLSSON, Christer , LÖVGREN, Nicklas , WOMACK, Richard
发明人： KARLSSON, Christer , LÖVGREN, Nicklas , WOMACK, Richard
IPC分类号： G11C11/22
CPC分类号： G11C11/22 , G11C7/062
摘要： In a method for reading the memory cell in a passive matrix-addressable ferroelectric or electret memory array with memory cells in the form of ferroelectric or electret capacitors, sensing means connected to the bit line of memory cell is activated in order to initiate a charge measurement and a first charge value is registered, whereafter a switching voltage is applied to the memory cell and a second charge value is registered. A readout value is obtained by subtracting the first charge value from the second charge value. A sensing device for performing the method of the invention comprises a first amplifier stage (Al) with an integrator circuit (715) and connected with a second amplifier stage (A2) following the first amplifier stage and with an integrator circuit (725), and a sampling capacitor (720) connected between an output (716) of the first amplifier stage (Al) and an input (722) of the second amplifier stage (A2).
摘要翻译：在用于以具有铁电或驻极体电容器形式的存储单元读取无源矩阵可寻址铁电或驻极体存储器阵列中的存储单元的方法中，连接到存储单元的位线的感测装置是激活以启动电荷测量并记录第一电荷值，随后将切换电压施加到存储器单元并记录第二电荷值。通过从第二电荷值中减去第一电荷值来获得读出值。用于执行本发明的方法的感测装置包括具有积分器电路（715）并且与第一放大器级之后的第二放大器级（A2）和积分器电路（725）连接的第一放大器级（A1），以及连接在第一放大器级（A1）的输出（716）和第二放大器级（A2）的输入（722）之间的采样电容器（720）。

4. 发明申请

WO2006135245A1 A DATA STORAGE DEVICE 审中-公开
标题翻译：数据存储设备
公开(公告)号：WO2006135245A1
公开(公告)日：2006-12-21
申请号：PCT/NO2006/000214
申请日：2006-06-08
申请人： THIN FILM ELECTRONICS ASA , LEISTAD, Geirr, I. , BRÖMS, Per , KARLSSON, Christer
发明人： LEISTAD, Geirr, I. , BRÖMS, Per , KARLSSON, Christer
IPC分类号： G06K19/067 , G06K1/12 , G06K7/06 , G06K7/08
CPC分类号： G06K7/0021 , B82Y10/00 , G11B9/02 , G11B9/1454 , G11C11/22 , G11C11/5664 , G11C13/0009 , G11C13/0014 , G11C13/0016
摘要： In a non- volatile electric memory system a card-like memory unit (10) and a read/write unit (11) are provided as physically separate units. The memory unit (10) is based on a memory material (4) that can be set to at least two distinct physical states by applying an electric field across the memory material. The read/write unit (10) comprises contact means (9) provided in a determined geometrical pattern enabling a definition of memory cells in memory unit (10) in an initial write operation, the memory cells being located in a geometrical pattern corresponding to that of the contact means (9). Establishing a physical contact between the memory unit (10) and the read/write unit (11) closes an electrical circuit over an addressed memory cell such that read, write or erase operations can be effected. The memory material (4) of the memory unit (10) can be a ferroelectric or electret material that can be polarized into two discernible polarization states, or it can be a material with a resistive impedance characteristic such that a memory cell of the material can be set to a specific stable resistance value by the application of an electric field.
摘要翻译：在非易失性电存储器系统中，作为物理上分离的单元提供了卡状存储器单元（10）和读/写单元（11）。存储器单元（10）基于可通过在存储器材料上施加电场而被设置为至少两种不同物理状态的存储器材料（4）。读/写单元（10）包括以确定的几何图案提供的接触装置（9），使得能够在初始写入操作中对存储器单元（10）中的存储器单元进行定义，存储器单元位于与其对应的几何图案的接触装置（9）。在存储器单元（10）和读/写单元（11）之间建立物理接触通过寻址的存储单元封闭电路，从而可以实现读，写或擦除操作。存储单元（10）的存储材料（4）可以是铁电或驻极体材料，其可以被极化成两个可识别的极化状态，或者它可以是具有阻抗特性的材料，使得材料的存储单元可以通过施加电场来设定为特定的稳定电阻值。

5. 发明申请

WO2006073308A1 METHOD FOR OPERATING A PASSIVE MATRIX-ADDRESSABLE FERROELECTRIC OR ELECTRET MEMORY DEVICE 审中-公开
标题翻译：一种无源矩阵可寻址的电磁存储器件的操作方法
公开(公告)号：WO2006073308A1
公开(公告)日：2006-07-13
申请号：PCT/NO2005/000001
申请日：2005-01-04
申请人： THIN FILM ELECTRONICS ASA , KARLSSON, Christer , GUSTAFSSON, Göran , JOHANSSON, Mats , SANDSTRÖM, Per , NORDAL, Per-Erik , GUDESEN, Hans, Gude , CARLSSON, Johan
发明人： KARLSSON, Christer , GUSTAFSSON, Göran , JOHANSSON, Mats , SANDSTRÖM, Per , NORDAL, Per-Erik , GUDESEN, Hans, Gude , CARLSSON, Johan
IPC分类号： G11C11/22 , G11C16/34 , G11C7/00
CPC分类号： G11C11/22
摘要： In a method for operating a passive matrix-addressable ferroelectric or electret memory device, a voltage pulse protocol based on a 1/3 voltage selection rule is used in order to keep disturb voltages at minimum, the voltage pulse protocol comprising cycles for read and write/erase bases on time sequence of voltage pulses with defined parameters. The method comprises a refresh procedure wherein cells for refresh are selected and refresh requests processed by a memory device controller, the refresh requests are monitored and processed in regard of ongoing or scheduled memory operations, and refresh voltage pulses with defined parameters are applied to the memory cells selected for refresh, while simultaneously ensuring that non-selected memory cells are subjected to zero voltage or voltages which do not affect the polarization state of these cells.
摘要翻译：在用于操作无源矩阵寻址铁电或驻极体存储器件的方法中，使用基于1/3电压选择规则的电压脉冲协议以便将干扰电压保持在最小值，所述电压脉冲协议包括用于读取和写入的周期根据具有规定参数的电压脉冲的时间顺序进行擦除。该方法包括刷新过程，其中选择用于刷新的单元和由存储器件控制器处理的刷新请求，关于正在进行或调度的存储器操作来监视和处理刷新请求，并且将具有定义参数的刷新电压脉冲施加到存储器选择用于刷新的单元，同时确保未选择的存储单元经受零电压或不影响这些单元极化状态的电压。

6. 发明申请

WO2013000825A1 SHORT CIRCUIT REDUCTION IN AN ELECTRONIC COMPONENT COMPRISING A STACK OF LAYERS ARRANGED ON A FLEXIBLE SUBSTRATE 审中-公开
标题翻译：在包含柔性基板上的堆叠层的电子元件中短路电路减少
公开(公告)号：WO2013000825A1
公开(公告)日：2013-01-03
申请号：PCT/EP2012/062025
申请日：2012-06-21
申请人： THIN FILM ELECTRONICS ASA , KARLSSON, Christer , HAGEL, Olle, Jonny , NILSSON, Jakob , BRÖMS, Per
发明人： KARLSSON, Christer , HAGEL, Olle, Jonny , NILSSON, Jakob , BRÖMS, Per
IPC分类号： G11B9/02 , H01L27/28 , H01L27/115 , G11C13/00 , G11C11/56
CPC分类号： G11C11/22 , G11C13/0014 , G11C13/0016 , G11C2213/51 , G11C2213/55 , G11C2213/77 , G11C2213/80 , H01L27/285 , H01L51/0516 , H01L51/0575 , Y10T29/49155
摘要： An electronic component (1) and an electronic device (100) comprising one or more such components (1). The electronic component (1) comprises a stack (4) of layers arranged on a flexible substrate (3). Said stack comprises an electrically active part (4a) and a protective layer (11) for protecting the electrically active part against scratches and abrasion. Said electrically active part comprises a bottom electrode layer (5) and a top electrode layer (9) and at least one insulating or semi-insulating layer (7) between said electrodes. The stack further comprises a buffer layer (13), arranged between the top electrode layer (9) and the protective layer (11). The buffer layer (13) is adapted for at least partially absorbing a lateral dimensional change (ΔL) occurring in the protective layer (11) and thus preventing said dimensional change (ΔL) from being transferred to the electrically active part (4a), thereby reducing the risk of short circuit to occur between the electrodes.
摘要翻译：电子部件（1）和包括一个或多个这样的部件（1）的电子设备（100）。电子部件（1）包括布置在柔性基板（3）上的层（4）。所述堆叠包括电活性部分（4a）和保护层（11），用于保护电活性部分免受划伤和磨损。所述电活性部分包括底部电极层（5）和顶部电极层（9）以及所述电极之间的至少一个绝缘或半绝缘层（7）。该堆叠还包括布置在顶部电极层（9）和保护层（11）之间的缓冲层（13）。缓冲层（13）适于至少部分地吸收出现在保护层（11）中的横向尺寸变化（ΔL），从而防止所述尺寸变化（ΔL）转移到电活性部分（4a）从而降低电极之间发生短路的风险。

7. 发明申请

WO2016168089A1 SENSOR-BASED NFC/RF MECHANISM WITH MULTIPLE VALID STATES FOR DETECTING AN OPEN OR COMPROMISED CONTAINER 审中-公开
标题翻译：基于传感器的NFC /射频机制，具有多个有效状态，用于检测开放或压缩容器
公开(公告)号：WO2016168089A1
公开(公告)日：2016-10-20
申请号：PCT/US2016/026812
申请日：2016-04-08
申请人： THIN FILM ELECTRONICS ASA , BRIGHT, Matthew, A. , ERNST, Jennifer , KARLSSON, Christer , HERLOGSSON, Lars
发明人： BRIGHT, Matthew, A. , ERNST, Jennifer , KARLSSON, Christer , HERLOGSSON, Lars
IPC分类号： G06K19/077 , B65D5/43 , B65D27/30
CPC分类号： G06Q30/018 , H04Q9/00 , H04Q2209/47
摘要： A wireless (e.g., near field or RF) communication device, and methods of manufacturing and using the same are disclosed. The wireless communication device includes a receiver and/or transmitter, a substrate with an antenna thereon, an integrated circuit, and one or more continuity sensors. The antenna receives and/or transmits or broadcasts a wireless signal. The integrated circuit processes the wireless signal and/or information therefrom, and/or generates the wireless signal and/or information therefor. The continuity sensor(s) are configured to sense or determine the presence of a chemical or substance in the package or container, and thus a continuity state of a package or container on which the communication device is placed or to which the communication device is fixed or adhered. The continuity sensor(s) are electrically connected to a set of terminals of the integrated circuit different from the set of terminals to which the antenna is electrically connected.
摘要翻译：公开了无线（例如近场或RF）通信设备及其制造和使用方法。无线通信设备包括接收器和/或发射器，其上具有天线的衬底，集成电路和一个或多个连续性传感器。天线接收和/或发送或广播无线信号。集成电路处理无线信号和/或信息，和/或生成无线信号和/或其信息。连续性传感器被配置为感测或确定包装或容器中的化学物质或物质的存在，并且因此被配置在其上放置通信装置或通信装置固定到其上的包装或容器的连续性状态或粘附。连续性传感器电连接到集成电路的不同于天线电连接的端子组的一组端子。

8. 发明申请

WO2013000501A1 SHORT CIRCUIT REDUCTION IN A FERROELECTRIC MEMORY CELL COMPRISING A STACK OF LAYERS ARRANGED ON A FLEXIBLE SUBSTRATE 审中-公开
标题翻译：在包含安装在柔性基板上的层叠的电介质存储单元中的短路电路减少
公开(公告)号：WO2013000501A1
公开(公告)日：2013-01-03
申请号：PCT/EP2011/060740
申请日：2011-06-27
申请人： THIN FILM ELECTRONICS ASA , KARLSSON, Christer , HAGEL, Olle Jonny , NILSSON, Jakob , BRÖMS, Per
发明人： KARLSSON, Christer , HAGEL, Olle Jonny , NILSSON, Jakob , BRÖMS, Per
IPC分类号： G11B9/02 , H01L27/28 , H01L27/115 , G11C13/00 , G11C11/56
CPC分类号： H01L27/11507 , G11B9/02 , G11C11/161 , G11C11/22 , H01L23/562 , H01L27/0248 , H01L27/11502 , H01L27/1203 , H01L28/40 , H01L28/55 , H01L28/75 , H01L43/02 , H01L43/12 , H01L51/0591 , H01L2924/0002 , H01L2924/00
摘要： A ferroelectric memory cell (1) and a memory device (100) comprising one or more such cells (1). The ferroelectric memory cell comprises a stack (4) of layers arranged on a flexible substrate (3). Said stack comprises an electrically active part (4a) and a protective layer (11) for protecting the electrically active part against scratches and abrasion. Said electrically active part comprises a bottom electrode layer (5) and a top electrode layer (9) and at least one ferroelectric memory material layer (7) between said electrodes. The stack further comprises a buffer layer (13) arranged between the top electrode layer (9) and the protective layer (11). The buffer layer (13) is adapted for at least partially absorbing a lateral dimensional change (ΔL) occurring in the protective layer (11) and thus preventing said dimensional change (ΔL) from being transferred to the electrically active part (4a), thereby reducing the risk of short circuit to occur between the electrodes.
摘要翻译：铁电存储器单元（1）和包括一个或多个这样的单元（1）的存储器件（100）。铁电存储单元包括布置在柔性基板（3）上的层叠层（4）。所述堆叠包括电活性部分（4a）和保护层（11），用于保护电活性部分免受划伤和磨损。所述电活性部分包括底电极层（5）和顶电极层（9）和在所述电极之间的至少一个铁电存储材料层（7）。该堆叠还包括布置在顶部电极层（9）和保护层（11）之间的缓冲层（13）。缓冲层（13）适于至少部分地吸收出现在保护层（11）中的横向尺寸变化（ΔL），从而防止所述尺寸变化（ΔL）转移到电活性部分（4a）从而降低电极之间发生短路的风险。

9. 发明申请

WO2003088041A1 METHODS FOR STORING DATA IN NON-VOLATILE MEMORIES 审中-公开
标题翻译：在非易失性存储器中存储数据的方法
公开(公告)号：WO2003088041A1
公开(公告)日：2003-10-23
申请号：PCT/NO2003/000115
申请日：2003-04-10
申请人： THIN FILM ELECTRONICS ASA , TORJUSSEN, Lars, Sundell , KARLSSON, Christer
发明人： TORJUSSEN, Lars, Sundell , KARLSSON, Christer
IPC分类号： G06F11/16
CPC分类号： G06F11/08 , G11C11/22 , G11C29/74
摘要： In methods for storing data in a non-volatile ferroelectric random access memory wherein destructive readout operations are followed by rewrite operations, identical copies of the data are stored in different memory locations that do not have any common word lines or alternative neither common word lines nor common bit lines. A first word line or a segment of a first word line is read in its entirety, said word line or said segment comprising at least a first copy of the identical copies of data. The data thus read are rewritten to the memory location and in addition transferred from the memory location in question to an appropriate cache location, whereafter subsequent memory locations either in the form of word lines or segments thereof are read, and data rewritten to the cache location. The operation is repeated until all identical copies of the data have been transferred to the cache storage. Subsequently bit errors are detected by comparing the identical copies in a memory control logic circuit, which also may be used for caching readout data copies or alternatively be connected with a separate cache memory. Corrected data are written back to the appropriate memory locations holding bit errors when the latter have been detected.
摘要翻译：在用于将数据存储在非易失性铁电随机存取存储器中的方法中，其中破坏性读出操作之后是重写操作，数据的相同副本被存储在不具有任何公共字线的不同存储器位置中，或者不是常用字线通用位线。读取第一字线的第一字线或第一字段的整体，所述字线或所述片段至少包括相同的数据副本的第一副本。这样读取的数据被重写到存储器位置，并且另外从所讨论的存储器位置传送到适当的高速缓存位置，之后读取以字线或其段的形式的后续存储器位置，并将数据重写到高速缓存位置。重复操作，直到数据的所有相同副本已经传送到高速缓存存储器。随后，通过比较存储器控制逻辑电路中的相同副本来检测位错误，存储器控制逻辑电路也可用于缓存读出的数据副本，或者替代地与单独的高速缓冲存储器连接。当检测到这些数据被检测到时，校正的数据被写回到保持位错误的适当的存储器位置。

10. 发明申请

WO2003046923A1 A METHOD FOR READING A PASSIVE MATRIX-ADDRESSABLE DEVICE AND A DEVICE FOR PERFORMING THE METHOD 审中-公开
标题翻译：用于读取被动矩阵寻址装置的方法和用于执行该方法的装置
公开(公告)号：WO2003046923A1
公开(公告)日：2003-06-05
申请号：PCT/NO2002/000389
申请日：2002-10-29
申请人： THIN FILM ELECTRONICS ASA , BRÖMS, Per , KARLSSON, Christer
发明人： BRÖMS, Per , KARLSSON, Christer
IPC分类号： G11C11/22
CPC分类号： G11C11/22
摘要： In a method for reading of a passive matrix-addressable device, particularly a memory device or a sensor device with individually addressable cells of a polarizable material, the cells store data in the form of one of two polarization states +P r ;-P r in each cell, and the polarization states in the cells are written and read by addressing via electrodes which form word and bit lines (WL;BL) in an orthogonal electrode matrix, and wherein the cells are provided in or at the crossings between the word and bit lines (WL;BL) a voltage pulse protocol is used according to which electric potentials on all word and bit lines are controlled coordinated in time. During reading a word line (WL) is activated by applying voltage which relative to the potential on all crossing bit lines (BL) corresponds to the voltage VS and data stored in the cells connected to this active word line (AWL) are determined by detecting the charge values of the cells in a detection means (SA). In a device for performing the method electric potentialson all word and bit lines (WL;BL) are controlled coordinated in time by therewith connected control means which implements the voltage pulse protocol. - Use in passive matrix-addressable memory and sensor devices.
摘要翻译：在用于读取无源矩阵寻址装置，特别是具有可极化材料的单独可寻址单元的存储器件或传感器装置的方法中，电池以每种形式的两种偏振态+ Pr; -Pr之一的形式存储数据并且通过在正交电极矩阵中形成字和位线（WL; BL）的寻址通孔寻址来写入和读取单元中的偏振状态，并且其中单元被提供在字和位之间或之间的交叉处线路（WL; BL）使用电压脉冲协议，根据该电压脉冲协议，所有字线和位线上的电位在时间上被协调控制。在读取期间，通过施加相对于所有交叉位线（BL）上的电位的电压对应于电压VS并且存储在连接到该有源字线（AWL）的单元中的数据）的电压来激活字线（WL）检测装置（SA）中的单元的电荷值。在用于执行该方法的电子装置中，所有字和位线（WL; BL）通过实现电压脉冲协议的连接的控制装置在时间上协调控制。 - 用于无源矩阵寻址存储器和传感器设备。

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