专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2012078213A1 HIGH DENSITY THREE-DIMENSIONAL INTEGRATED CAPACITORS 审中-公开
标题翻译：高密度三维集成电容器
公开(公告)号：WO2012078213A1
公开(公告)日：2012-06-14
申请号：PCT/US2011/044026
申请日：2011-07-14
申请人： TESSERA INC , MOHAMMED, Ilyas , HABA, Belgacem , UZOH, Cyprian , SAVALIA, Piyush , OGANESIAN, Vage
发明人： MOHAMMED, Ilyas , HABA, Belgacem , UZOH, Cyprian , SAVALIA, Piyush , OGANESIAN, Vage
IPC分类号： H01L21/02 , H01L21/768 , H01L23/48
CPC分类号： H01L28/91 , H01L23/481 , H01L28/60 , H01L2223/6622 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： A capacitor 340 includes a substrate 320 having a first surface 321, a second surface 322 remote from the first surface, and a through opening 330 extending between the first and second surfaces, first and second metal elements 360, 370, and a capacitor dielectric layer 380 separating and insulating the first and second metal elements from one another at least within the through opening. The first metal element 360 is exposed at the first surface 321 and extends into the through opening 330. The second metal element 370 is exposed at the second surface 322 and extends into the through opening 330. The first and second metal elements 360, 370 are electrically connectable to first and second electric potentials. The capacitor dielectric layer 380 has an undulating shape.
摘要翻译：电容器340包括具有第一表面321，远离第一表面的第二表面322和在第一和第二表面之间延伸的通孔330的基底320，第一和第二金属元件360,370以及电容器电介质层 380至少在所述通孔内分离和绝缘所述第一和第二金属元件。第一金属元件360在第一表面321处露出并延伸到通孔330中。第二金属元件370在第二表面322处露出并延伸到通孔330中。第一和第二金属元件360,370是电连接到第一和第二电位。电容器介电层380具有波状形状。

2. 发明申请

WO2012145373A1 VIAS IN POROUS SUBSTRATES 审中-公开
标题翻译：多孔基材中的VIAS
公开(公告)号：WO2012145373A1
公开(公告)日：2012-10-26
申请号：PCT/US2012/034038
申请日：2012-04-18
申请人： TESSERA, INC. , MOHAMMED, Ilyas , HABA, Belgacem , UZOH, Cyprian , SAVALIA, Piyush
发明人： MOHAMMED, Ilyas , HABA, Belgacem , UZOH, Cyprian , SAVALIA, Piyush
IPC分类号： H01L21/768 , H01L23/48 , H01L23/498
CPC分类号： H01L21/76877 , H01L21/486 , H01L21/76837 , H01L21/76898 , H01L23/147 , H01L23/15 , H01L23/481 , H01L23/49827 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： A microelectronic unit (10) can include a substrate (20) having front and rear surfaces (22,) (21) and active semiconductor devices therein, the substrate having a plurality of (openings 12) arranged in a symmetric or asymmetric distribution across an area of the rear surface, first and second conductive vias (50) connected to first and second pads (24) exposed at the front surface, and pluralities of first and second conductive interconnects (40) extending within respective ones of the openings. The plurality of first conductive interconnects (40) can be separated from the plurality of second conductive interconnects (40) by at least one of the openings (12), the at least one opening at least partially filled with an insulating material (70). The distribution of the openings (12) can include at least m openings spaced apart in a first direction D1 and n openings spaced apart in a second direction D2 transverse to the first direction.
摘要翻译：微电子单元（10）可以包括其中具有前表面和后表面（22）（21）和其中的有源半导体器件的衬底（20），所述衬底具有多个（开口12），其布置成对称或非对称分布，后表面的区域，连接到在前表面暴露的第一和第二焊盘（24）的第一和第二导电通孔（50）以及在相应的一个开口内延伸的多个第一和第二导电互连（40）。多个第一导电互连（40）可以通过至少一个开口（12）与多个第二导电互连（40）分开，所述至少一个开口至少部分地填充有绝缘材料（70）。开口（12）的分布可以包括在第一方向D1上间隔开的至少m个开口和在横向于第一方向的第二方向D2上间隔开的n个开口。

3. 发明申请

WO2012074571A1 MICROELECTRONIC ASSEMBLY WITH PLURAL STACKED ACTIVE CHIPS HAVING THROUGH - SILICON VIAS FORMED IN STAGES 审中-公开
标题翻译：微型电子组件，具有通过层状结构形成的层状活性炭
公开(公告)号：WO2012074571A1
公开(公告)日：2012-06-07
申请号：PCT/US2011/029568
申请日：2011-03-23
申请人： TESSERA, INC. , OGANESIAN, Vage , HABA, Belgacem , MOHAMMED, Ilyas , MITCHELL, Craig , SAVALIA, Piyush
发明人： OGANESIAN, Vage , HABA, Belgacem , MOHAMMED, Ilyas , MITCHELL, Craig , SAVALIA, Piyush
IPC分类号： H01L23/48 , H01L25/065
CPC分类号： H01L25/00 , H01L21/76805 , H01L21/76898 , H01L23/3178 , H01L23/481 , H01L24/81 , H01L24/92 , H01L24/94 , H01L25/0657 , H01L25/50 , H01L2224/0401 , H01L2224/05009 , H01L2224/13025 , H01L2224/16225 , H01L2224/29109 , H01L2224/29111 , H01L2224/29144 , H01L2224/29188 , H01L2224/2919 , H01L2224/32145 , H01L2224/32245 , H01L2224/73253 , H01L2224/83005 , H01L2224/9202 , H01L2224/94 , H01L2225/06513 , H01L2225/06527 , H01L2225/06541 , H01L2924/10253 , H01L2924/1032 , H01L2924/1037 , H01L2924/12042 , H01L2924/14 , H01L2924/1433 , H01L2924/1436 , H01L2924/1437 , H01L2924/15311 , H01L2224/83 , H01L2924/00
摘要： A microelectronic assembly 100 is provided in which first and second electrically conductive pads 108, 106 exposed at front surfaces of first and second microelectronic elements 110, 102, respectively, are juxtaposed, each of the microelectronic elements embodying active semiconductor devices. An electrically conductive element 114 may extend within a first opening 111 extending from a rear surface 118 of the first microelectronic element 110 towards the front surface 103 thereof, within a second opening 113 extending from the first opening 111 towards the front surface 103 of the first microelectronic element 110, and within a third opening 180 extending through at least one of the first and second pads 108, 106 to contact the first and second pads. Interior surfaces 121, 123 of the first and second openings 111, 113 may extend in first and second directions relative to the front surface 103 of the first microelectronic element 110, respectively, to define a substantial angle.
摘要翻译：提供了微电子组件100，其中分别暴露在第一和第二微电子元件110,102的前表面处的第一和第二导电焊盘108,106并置，每个微电子元件体现有源半导体器件。导电元件114可以在从第一微电子元件110的后表面118延伸到其前表面103的第一开口111内，在从第一开口111朝向第一开口111的前表面103延伸的第一开口113内延伸微电子元件110，以及延伸穿过第一和第二焊盘108,106中的至少一个的第三开口180内，以接触第一和第二焊盘。第一和第二开口111,113的内表面121,123可以分别相对于第一微电子元件110的前表面103在第一和第二方向上延伸，以限定大致的角度。

4. 发明申请

WO2012011928A1 MICROELECTRONIC ELEMENTS WITH REAR CONTACTS CONNECTED WITH VIA FIRST OR VIA MIDDLE STRUCTURES 审中-公开
标题翻译：具有通过第一个或通过中间结构连接的后接触器的微电子元件
公开(公告)号：WO2012011928A1
公开(公告)日：2012-01-26
申请号：PCT/US2010/052458
申请日：2010-10-13
申请人： TESSERA, INC. , OGANESIAN, Vage , HABA, Belgacem , MOHAMMED, Ilyas , MITCHELL, Craig , SAVALIA, Piyush
发明人： OGANESIAN, Vage , HABA, Belgacem , MOHAMMED, Ilyas , MITCHELL, Craig , SAVALIA, Piyush
IPC分类号： H01L21/00
CPC分类号： H01L21/76898 , H01L23/481 , H01L24/05 , H01L24/06 , H01L24/16 , H01L25/0657 , H01L2224/02372 , H01L2224/02375 , H01L2224/02377 , H01L2224/0401 , H01L2224/05548 , H01L2224/06166 , H01L2224/06181 , H01L2224/13024 , H01L2224/131 , H01L2224/13111 , H01L2224/1329 , H01L2224/133 , H01L2224/16146 , H01L2224/16227 , H01L2224/17181 , H01L2224/81801 , H01L2224/8182 , H01L2224/8185 , H01L2224/94 , H01L2924/014 , H01L2924/00014 , H01L2224/03 , H01L2224/81
摘要： A microelectronic unit, microelectronic element, e g, an integrated circuit chip, having a semiconductor region of monocrystalline form. The semiconductor region has a front surface extending in a first direction, an active circuit element adjacent the front surface, a rear surface remote from the front surface and a conductive which extends towards the rear surface The conductive can be insulated from the semiconductor region by an inorganic dielectric layer An opening can extend from the rear surface partially through a thickness of the semiconductor region, with the opening and the conductive via having respective widths, in the first direction The width of the opening may be greater than the width of the conductive via where the opening meets the conductive via A rear contact can be electrically connected to the conductive and exposed at the rear surface for electrical connection with an external circuit element.
摘要翻译：微电子单元，微电子元件，例如具有单晶形式的半导体区域的集成电路芯片。半导体区域具有在第一方向上延伸的前表面，与前表面相邻的有源电路元件，远离前表面的后表面和朝向后表面延伸的导电体。导电体可以与半导体区域绝缘无机介电层开口可以从后表面部分地延伸穿过半导体区域的厚度，其中开口和导电通孔在第一方向上具有相应的宽度。开口的宽度可以大于导电通孔的宽度其中开口与导电通孔相接触A后触点可以电连接到导电并暴露在后表面以与外部电路元件电连接。

5. 发明申请

WO2012145370A1 MULTI-CHIP MODULE WITH STACKED FACE-DOWN CONNECTED DIES 审中-公开
标题翻译：多芯片模块，带有堆叠式倒装连接芯片
公开(公告)号：WO2012145370A1
公开(公告)日：2012-10-26
申请号：PCT/US2012/034034
申请日：2012-04-18
申请人： TESSERA, INC. , HABA, Belgacem , MOHAMMED, Ilyas , SAVALIA, Piyush
发明人： HABA, Belgacem , MOHAMMED, Ilyas , SAVALIA, Piyush
IPC分类号： H01L25/065 , H01L25/18 , H01L23/367 , H01L23/13
CPC分类号： H01L25/18 , H01L23/02 , H01L23/13 , H01L23/367 , H01L23/3675 , H01L23/49827 , H01L23/5386 , H01L24/16 , H01L24/17 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/73 , H01L25/0652 , H01L25/0657 , H01L25/50 , H01L2224/0401 , H01L2224/04042 , H01L2224/131 , H01L2224/13147 , H01L2224/16225 , H01L2224/16227 , H01L2224/16235 , H01L2224/32145 , H01L2224/32245 , H01L2224/33181 , H01L2224/48106 , H01L2224/48227 , H01L2224/48235 , H01L2224/48465 , H01L2224/73203 , H01L2224/73215 , H01L2224/73253 , H01L2224/73257 , H01L2224/73265 , H01L2225/0651 , H01L2225/06517 , H01L2225/06558 , H01L2225/06589 , H01L2924/00014 , H01L2924/01029 , H01L2924/01322 , H01L2924/07811 , H01L2924/09701 , H01L2924/1431 , H01L2924/1434 , H01L2924/15159 , H01L2924/15174 , H01L2924/15184 , H01L2924/15192 , H01L2924/15311 , H01L2924/18161 , H01L2924/20645 , H05K3/303 , H05K2201/10159 , H01L2924/00012 , H01L2924/014 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A microelectronic assembly 10 can include a substrate 20 having first and second surfaces 21, 22, at least two logic chips 30 overlying the first surface, and a memory chip 40 having a front surface 45 with contacts 44 thereon, the front surface of the memory chip confronting a rear surface 36 of each logic chip. Signal contacts 34 of each logic chip 30 can be directly electrically connected to signal contacts 34 of the other logic chips 30 through conductive structure 62 of the substrate 20 for transfer of signals between the logic chips. The logic chips 30 can be adapted to simultaneously execute a set of instructions of a given thread of a process. The contacts 44 of the memory chip 40 can be directly electrically connected to the signal contacts 34 of at least one of the logic chips 30 through the conductive structure 62.
摘要翻译：微电子组件10可以包括具有第一表面21和第二表面22的衬底20，覆盖第一表面的至少两个逻辑芯片30以及存储芯片40，其具有在其上的触点44的前表面45，存储器的前表面芯片面对每个逻辑芯片的后表面36。每个逻辑芯片30的信号触点34可以通过衬底20的导电结构62直接电连接到其它逻辑芯片30的信号触点34，用于在逻辑芯片之间传输信号。逻辑芯片30可以适于同时执行一个进程的给定线程的一组指令。存储芯片40的触点44可以通过导电结构62直接电连接到至少一个逻辑芯片30的信号触点34。

6. 发明申请

WO2012079013A1 HIGH DENSITY THREE-DIMENSIONAL INTEGRATED CAPACITORS 审中-公开
标题翻译：高密度三维集成电容器
公开(公告)号：WO2012079013A1
公开(公告)日：2012-06-14
申请号：PCT/US2011/064219
申请日：2011-12-09
申请人： TESSERA, INC. , OGANESIAN, Vage , HABA, Belgacem , MOHAMMED, Ilyas , SAVALIA, Piyush
发明人： OGANESIAN, Vage , HABA, Belgacem , MOHAMMED, Ilyas , SAVALIA, Piyush
IPC分类号： H01L21/02 , H01L21/768 , H01L23/48 , H01L23/64
CPC分类号： H01L28/91 , H01L23/481 , H01L28/60 , H01L2223/6622 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： A component (10) includes a substrate (20) and a capacitor (40). The substrate (20) can have first and second surfaces (21, 22) and an opening (30) extending from the first surface. The capacitor (40) can include first, second, third, and fourth conductive plates (61, 62, 71, 72), each plate extending along an inner surface (31) of the opening (30). The capacitor (40) can include first and second electrodes (163, 164) exposed at first and second spaced apart locations, and third and fourth electrodes (173, 174) exposed at third and fourth spaced apart locations. The third plate (71) can overlie the first plate (61) and can be separated therefrom by a first dielectric layer (81). The second plate (62) can overlie the third plate (71) and can be separated therefrom by a second dielectric layer (82). The fourth plate (72) can overlie the second plate (62) and can be separated therefrom by a third dielectric layer (83).
摘要翻译：组件（10）包括衬底（20）和电容器（40）。衬底（20）可以具有从第一表面延伸的第一和第二表面（21,22）和开口（30）。电容器（40）可以包括第一，第二，第三和第四导电板（61,62,71,72），每个板沿着开口（30）的内表面（31）延伸。电容器（40）可以包括在第一和第二间隔开的位置处暴露的第一和第二电极（163,164），以及在第三和第四间隔开的位置暴露的第三和第四电极（173,174）。第三板（71）可以覆盖第一板（61），并且可以通过第一介电层（81）与第一板（61）分离。第二板（62）可以覆盖第三板（71），并且可以通过第二介电层（82）与第三板（71）分离。第四板（72）可以覆盖第二板（62），并且可以通过第三介电层（83）与第二板（72）分离。

7. 发明申请

WO2012037220A1 MULTI-FUNCTION AND SHIELDED 3D INTERCONNECTS 审中-公开
标题翻译：多功能和屏蔽三维互联
公开(公告)号：WO2012037220A1
公开(公告)日：2012-03-22
申请号：PCT/US2011/051556
申请日：2011-09-14
申请人： TESSERA, INC. , OGANESIAN, Vage , HABA, Belgacem , MOHAMMED, Ilyas , MITCHELL, Craig , SAVALIA, Piyush
发明人： OGANESIAN, Vage , HABA, Belgacem , MOHAMMED, Ilyas , MITCHELL, Craig , SAVALIA, Piyush
IPC分类号： H01L23/48 , H01L23/498
CPC分类号： H01L23/49827 , H01L21/6835 , H01L23/481 , H01L23/49838 , H01L24/03 , H01L24/05 , H01L24/06 , H01L2221/68327 , H01L2221/6834 , H01L2223/6622 , H01L2224/05009 , H01L2224/05553 , H01L2224/05554 , H01L2224/05555 , H01L2224/0557 , H01L2224/05644 , H01L2224/05647 , H01L2224/06181 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/12042 , H01L2924/14 , H01L2924/15788 , H01L2924/3011 , H01L2924/00014 , H01L2924/00
摘要： A microelectronic unit 10 includes a semiconductor element 20 consisting essentially of semiconductor material and having a front surface 21, a rear surface 22, a plurality of active semiconductor devices 23a, 23b adjacent the front surface 21, a plurality of conductive pads 50 exposed at the front surface 21, and an opening 30 extending through the semiconductor element 20. At least one of the conductive pads 50 can at least partially overlie the opening 30 and can be electrically connected with at least one of the active semiconductor devices 23a, 23b. The microelectronic unit 10 can also include a first conductive element 60 exposed at the rear surface 22 for connection with an external component, the first conductive element 60 extending through the opening 30 and electrically connected with the at least one conductive pad 50, and a second conductive element 40 extending through the opening 30 and insulated from the first conductive element 60. The at least one conductive pad 50 can overlie a peripheral edge 41 of the second conductive element 40.
摘要翻译：微电子单元10包括基本上由半导体材料组成并具有前表面21，后表面22，与前表面21相邻的多个有源半导体器件23a，23b的半导体元件20，在该表面21处暴露的多个导电焊盘50 前表面21和延伸穿过半导体元件20的开口30.至少一个导电焊盘50可以至少部分地覆盖开口30并且可以与有源半导体器件23a，23b中的至少一个电连接。微电子单元10还可以包括暴露在后表面22处用于与外部部件连接的第一导电元件60，第一导电元件60延伸穿过开口30并与至少一个导电焊盘50电连接，导电元件40延伸穿过开口30并与第一导电元件60绝缘。至少一个导电焊盘50可以覆盖在第二导电元件40的周边边缘41上。

8. 发明申请

WO2012011932A1 METHODS OF FORMING SEMICONDUCTOR ELEMENTS USING MICRO-ABRASIVE PARTICLE STREAM 审中-公开
标题翻译：使用微粉碎颗粒流形成半导体元件的方法
公开(公告)号：WO2012011932A1
公开(公告)日：2012-01-26
申请号：PCT/US2010/052785
申请日：2010-10-15
申请人： TESSERA , INC. , OGANESIAN, Vage , HABA, Belgacem , MITCHELL, Craig , MOHAMMED, Ilyas , SAVALIA, Piyush
发明人： OGANESIAN, Vage , HABA, Belgacem , MITCHELL, Craig , MOHAMMED, Ilyas , SAVALIA, Piyush
IPC分类号： H01L23/48
CPC分类号： H01L21/76898 , B24C1/045 , B24C3/322 , H01L23/481 , H01L23/4985 , H01L24/03 , H01L24/05 , H01L24/06 , H01L2224/03464 , H01L2224/05009 , H01L2224/0557 , H01L2224/05624 , H01L2224/05647 , H01L2224/05666 , H01L2224/06181 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01061 , H01L2924/01076 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10329 , H01L2924/14 , H01L2924/1433 , H01L2924/1434 , H01L2224/05552 , H01L2924/00
摘要： A method of fabricating a microelectronic unit 210 includes providing a semiconductor element 220 having a front 222 and rear surface 221 remote from the front surface, forming at least one opening 230 extending from the rear surface 221 through the semiconductor element 220 towards the front surface 222 by directing a jet of fine abrasive particles towards the semiconductor element, forming at least one second opening 240 extending from the first opening 230 to a bottom surface 251 of one conductive pad 250 exposed at the front surface 222, and forming at least one conductive contact 290 and at least one conductive interconnect 280a, 280b together. Each conductive interconnect 280a, 280b can extend within one or more of the first openings 230 and can be coupled to at least one conductive pad 250.
摘要翻译：制造微电子单元210的方法包括提供具有远离前表面的前222和后表面221的半导体元件220，形成从后表面221穿过半导体元件220朝向前表面222延伸的至少一个开口230 通过将精细磨料颗粒的射流引向半导体元件，形成从第一开口230延伸到暴露在前表面222处的一个导电焊盘250的底表面251的至少一个第二开口240，并形成至少一个导电接触 290和至少一个导电互连280a，280b在一起。每个导电互连280a，280b可以在一个或多个第一开口230内延伸并且可以耦合到至少一个导电焊盘250。

9. 发明申请

WO2012011930A1 NON-LITHOGRAPHIC FORMATION OF THREE-DIMENSIONAL CONDUCTIVE ELEMENTS 审中-公开
标题翻译：非线性形成三维导电元件
公开(公告)号：WO2012011930A1
公开(公告)日：2012-01-26
申请号：PCT/US2010/052633
申请日：2010-10-14
申请人： TESSERA, INC. , OGANESIAN, Vage , HABA, Belgacem , MOHAMMED, Ilyas , MITCHELL, Craig , SAVALIA, Piyush
发明人： OGANESIAN, Vage , HABA, Belgacem , MOHAMMED, Ilyas , MITCHELL, Craig , SAVALIA, Piyush
IPC分类号： H01L21/58 , H01L23/48
CPC分类号： H01L21/76879 , H01L21/76802 , H01L21/76898 , H01L23/481 , H01L23/4985 , H01L23/5226 , H01L24/06 , H01L2924/12042 , H01L2924/14 , H01L2924/1461 , H01L2924/00
摘要： A method of forming a conductive element (24) on a substrate (10) and the resulting assembly (80) are provided. The method includes forming a groove (22) in a sacrificial layer (20) overlying a dielectric region (18) disposed on a substrate (10). The groove (22) preferably extends along a sloped surface (16) of the substrate (10). The sacrificial layer (20) is preferably removed by a non-photolithographic method, such as ablating with a laser (70), mechanical milling, or sandblasting. A conductive element (24) is formed in the groove (22). The grooves (22) and conductive elements (124) may be formed along any surface of the substrate (110), including within trenches (128) and vias (121) formed therein, and may connect to conductive pads (150) on the front (114) and/or rear surface (112) of the substrate (110). The conductive elements (24) are preferably formed by plating and may or may not conform to the surface of the substrate (10).
摘要翻译：提供了在基板（10）上形成导电元件（24）的方法和所得到的组件（80）。该方法包括在覆盖设置在基板（10）上的电介质区域（18）上的牺牲层（20）中形成凹槽（22）。槽（22）优选地沿衬底（10）的倾斜表面（16）延伸。牺牲层（20）优选通过非光刻方法去除，例如用激光（70）烧蚀，机械研磨或喷砂。导电元件（24）形成在凹槽（22）中。沟槽（22）和导电元件（124）可以沿着衬底（110）的任何表面形成，包括在其中形成的沟槽（128）和通孔（121）内，并且可以连接到前面的导电焊盘（150）（114）和/或背表面（112）。导电元件（24）优选地通过电镀形成，并且可以或不符合基板（10）的表面。

10. 发明申请

WO2012075371A1 STACKED MICROELECTRONIC ASSEMBLY HAVING INTERPOSER CONNECTING ACTIVE CHIPS 审中-公开
标题翻译：具有连接主动插座的插座的堆叠式微电子组件
公开(公告)号：WO2012075371A1
公开(公告)日：2012-06-07
申请号：PCT/US2011/063025
申请日：2011-12-02
申请人： TESSERA, INC. , HABA, Belgacem , OGANESIAN, Vage , MOHAMMED, Ilyas , SAVALIA, Piyush , MITCHELL, Craig
发明人： HABA, Belgacem , OGANESIAN, Vage , MOHAMMED, Ilyas , SAVALIA, Piyush , MITCHELL, Craig
IPC分类号： H01L25/065 , H01L23/48 , H01L25/16
CPC分类号： H01L25/0657 , H01L21/486 , H01L21/76898 , H01L23/36 , H01L23/481 , H01L23/49822 , H01L23/49827 , H01L25/16 , H01L2224/16225 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06572 , H01L2924/15311
摘要： A microelectronic assembly (100) can include first and second microelectronic elements (102, 112) each embodying active semiconductor devices adjacent a front surface (104, 114) thereof, and an interposer (120) of a material having a CTE less than 10 ppm/°C. Each microelectronic element (102, 112) can have a conductive pad (106, 116) exposed at the respective front surface (104, 114). The interposer (120) can have a second conductive element (118) extending within an opening (222) in the interposer and exposed at first and second surfaces (227, 229) of the interposer. The first and second surfaces (227, 229) can face the front surface (104, 114) of the respective first and second microelectronic elements (102, 112). Each microelectronic element (102, 112) can include a first conductive element (236, 238) extending within an opening (206, 216) extending from a rear surface (237, 239) towards the front surface (104, 114) of the respective microelectronic element. At least one of the first conductive elements (236, 238) can extend through the conductive pad (204, 214) of the respective first or second microelectronic element (102, 112).
摘要翻译：微电子组件（100）可以包括第一和第二微电子元件（102,112），每个微电子元件（102,112）各自体现邻近其前表面（104,114）的有源半导体器件，以及具有CTE小于10ppm的材料的插入件（120） /C。每个微电子元件（102,112）可以具有在相应的前表面（104,114）处暴露的导电垫（106,116）。插入器（120）可以具有在插入器中的开口（222）内延伸并在插入件的第一和第二表面（227,229）处露出的第二导电元件（118）。第一和第二表面（227,229）可面对相应的第一和第二微电子元件（102,112）的前表面（104,114）。每个微电子元件（102,112）可以包括第一导电元件（236,238），该第一导电元件（236,238）在从后表面（237,239）朝向相应的后表面（227,119）的前表面（104,114）延伸的开口（206,216）内延伸微电子元件。第一导电元件（236,238）中的至少一个可以延伸通过相应的第一或第二微电子元件（102,112）的导电焊盘（204,214）。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式