专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2012078213A1 HIGH DENSITY THREE-DIMENSIONAL INTEGRATED CAPACITORS 审中-公开
标题翻译：高密度三维集成电容器
公开(公告)号：WO2012078213A1
公开(公告)日：2012-06-14
申请号：PCT/US2011/044026
申请日：2011-07-14
申请人： TESSERA INC , MOHAMMED, Ilyas , HABA, Belgacem , UZOH, Cyprian , SAVALIA, Piyush , OGANESIAN, Vage
发明人： MOHAMMED, Ilyas , HABA, Belgacem , UZOH, Cyprian , SAVALIA, Piyush , OGANESIAN, Vage
IPC分类号： H01L21/02 , H01L21/768 , H01L23/48
CPC分类号： H01L28/91 , H01L23/481 , H01L28/60 , H01L2223/6622 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： A capacitor 340 includes a substrate 320 having a first surface 321, a second surface 322 remote from the first surface, and a through opening 330 extending between the first and second surfaces, first and second metal elements 360, 370, and a capacitor dielectric layer 380 separating and insulating the first and second metal elements from one another at least within the through opening. The first metal element 360 is exposed at the first surface 321 and extends into the through opening 330. The second metal element 370 is exposed at the second surface 322 and extends into the through opening 330. The first and second metal elements 360, 370 are electrically connectable to first and second electric potentials. The capacitor dielectric layer 380 has an undulating shape.
摘要翻译：电容器340包括具有第一表面321，远离第一表面的第二表面322和在第一和第二表面之间延伸的通孔330的基底320，第一和第二金属元件360,370以及电容器电介质层 380至少在所述通孔内分离和绝缘所述第一和第二金属元件。第一金属元件360在第一表面321处露出并延伸到通孔330中。第二金属元件370在第二表面322处露出并延伸到通孔330中。第一和第二金属元件360,370是电连接到第一和第二电位。电容器介电层380具有波状形状。

2. 发明申请

WO2012075371A1 STACKED MICROELECTRONIC ASSEMBLY HAVING INTERPOSER CONNECTING ACTIVE CHIPS 审中-公开
标题翻译：具有连接主动插座的插座的堆叠式微电子组件
公开(公告)号：WO2012075371A1
公开(公告)日：2012-06-07
申请号：PCT/US2011/063025
申请日：2011-12-02
申请人： TESSERA, INC. , HABA, Belgacem , OGANESIAN, Vage , MOHAMMED, Ilyas , SAVALIA, Piyush , MITCHELL, Craig
发明人： HABA, Belgacem , OGANESIAN, Vage , MOHAMMED, Ilyas , SAVALIA, Piyush , MITCHELL, Craig
IPC分类号： H01L25/065 , H01L23/48 , H01L25/16
CPC分类号： H01L25/0657 , H01L21/486 , H01L21/76898 , H01L23/36 , H01L23/481 , H01L23/49822 , H01L23/49827 , H01L25/16 , H01L2224/16225 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06572 , H01L2924/15311
摘要： A microelectronic assembly (100) can include first and second microelectronic elements (102, 112) each embodying active semiconductor devices adjacent a front surface (104, 114) thereof, and an interposer (120) of a material having a CTE less than 10 ppm/°C. Each microelectronic element (102, 112) can have a conductive pad (106, 116) exposed at the respective front surface (104, 114). The interposer (120) can have a second conductive element (118) extending within an opening (222) in the interposer and exposed at first and second surfaces (227, 229) of the interposer. The first and second surfaces (227, 229) can face the front surface (104, 114) of the respective first and second microelectronic elements (102, 112). Each microelectronic element (102, 112) can include a first conductive element (236, 238) extending within an opening (206, 216) extending from a rear surface (237, 239) towards the front surface (104, 114) of the respective microelectronic element. At least one of the first conductive elements (236, 238) can extend through the conductive pad (204, 214) of the respective first or second microelectronic element (102, 112).
摘要翻译：微电子组件（100）可以包括第一和第二微电子元件（102,112），每个微电子元件（102,112）各自体现邻近其前表面（104,114）的有源半导体器件，以及具有CTE小于10ppm的材料的插入件（120） /C。每个微电子元件（102,112）可以具有在相应的前表面（104,114）处暴露的导电垫（106,116）。插入器（120）可以具有在插入器中的开口（222）内延伸并在插入件的第一和第二表面（227,229）处露出的第二导电元件（118）。第一和第二表面（227,229）可面对相应的第一和第二微电子元件（102,112）的前表面（104,114）。每个微电子元件（102,112）可以包括第一导电元件（236,238），该第一导电元件（236,238）在从后表面（237,239）朝向相应的后表面（227,119）的前表面（104,114）延伸的开口（206,216）内延伸微电子元件。第一导电元件（236,238）中的至少一个可以延伸通过相应的第一或第二微电子元件（102,112）的导电焊盘（204,214）。

3. 发明申请

WO2012074570A2 STACKED MICROELECTRONIC ASSEMBLY WITH TSVS FORMED IN STAGES AND CARRIER ABOVE CHIP 审中-公开
标题翻译：堆叠式微电脑组件与TSVS在步骤中形成和载体上面的芯片
公开(公告)号：WO2012074570A2
公开(公告)日：2012-06-07
申请号：PCT/US2011/029394
申请日：2011-03-22
申请人： TESSERA, INC , OGANESIAN, Vage , HABA, Belgacem , MOHAMMED, Ilyas , MITCHELL, Craig , SAVALIA, Piyush
发明人： OGANESIAN, Vage , HABA, Belgacem , MOHAMMED, Ilyas , MITCHELL, Craig , SAVALIA, Piyush
IPC分类号： H01L21/60
CPC分类号： H01L23/481 , H01L21/76802 , H01L21/76805 , H01L21/76877 , H01L21/76898 , H01L21/78 , H01L23/145 , H01L23/147 , H01L23/49827 , H01L24/11 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/81 , H01L24/83 , H01L24/89 , H01L24/92 , H01L2224/0401 , H01L2224/0557 , H01L2224/13009 , H01L2224/13099 , H01L2224/16225 , H01L2224/16235 , H01L2224/83 , H01L2224/9202 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01049 , H01L2924/01061 , H01L2924/01074 , H01L2924/01082 , H01L2924/014 , H01L2924/12042 , H01L2924/14 , H01L2924/15311 , H01L2224/05552 , H01L2924/00
摘要： A microelectronic assembly 100 is provided which includes a first element 110 consisting essentially of at least one of semiconductor or inorganic dielectric material having a surface 103 facing and attached to a major surface 104 of a microelectronic element 102 at which a plurality of conductive pads 106 are exposed, the microelectronic element 102 having active semiconductor devices therein. A first opening 111 extends from an exposed surface 118 of the first element 110 towards the surface 103 attached to the microelectronic element 102, and a second opening 113 extends from the first opening 111 to a first one of the conductive pads 106, wherein where the first and second openings meet, interior surfaces 121, 123 of the first and second openings extend at different angles relative to the major surface 104 of the microelectronic element 102. A conductive element 114 extends within the first and second openings 111, 113 and contacts the at least one conductive pad 106.
摘要翻译：提供微电子组件100，其包括基本上由半导体或无机电介质材料中的至少一种组成的第一元件110，其具有面向103并附着到微电子元件102的主表面104的表面103，多个导电焊盘106 微电子元件102在其中具有有源半导体器件。第一开口111从第一元件110的暴露表面118延伸到附接到微电子元件102的表面103，并且第二开口113从第一开口111延伸到导电焊盘106中的第一开口111，其中第一和第二开口相交，第一和第二开口的内表面121,123相对于微电子元件102的主表面104以不同的角度延伸。导电元件114在第一和第二开口111,113内延伸并接触至少一个导电垫106。

4. 发明申请

WO2012037216A2 STAGED VIA FORMATION FROM BOTH SIDES OF CHIP 审中-公开
标题翻译：通过芯片的两面形成
公开(公告)号：WO2012037216A2
公开(公告)日：2012-03-22
申请号：PCT/US2011/051552
申请日：2011-09-14
申请人： TESSERA, INC. , OGANESIAN, Vage , HABA, Belgacem , MOHAMMED, Ilyas , MITCHELL, Craig , SAVALIA, Piyush
发明人： OGANESIAN, Vage , HABA, Belgacem , MOHAMMED, Ilyas , MITCHELL, Craig , SAVALIA, Piyush
IPC分类号： H01L21/768 , H01L23/48 , H01L25/065
CPC分类号： H01L23/481 , H01L21/76898 , H01L23/50 , H01L24/03 , H01L24/05 , H01L25/0657 , H01L25/50 , H01L2224/0401 , H01L2224/05009 , H01L2224/06181 , H01L2224/16145 , H01L2224/32145 , H01L2224/73204 , H01L2225/06513 , H01L2225/06541 , H01L2225/06544 , H01L2924/01322 , H01L2924/07811 , H01L2924/12042 , H01L2924/14 , H01L2924/00012 , H01L2924/00
摘要： A method of fabricating a semiconductor assembly 10 can include providing a semiconductor element 20 having a front surface 21, a rear surface 22, and a plurality of conductive pads 50, forming at least one hole 40 extending at least through a respective one of the conductive pads 50 by processing applied to the respective conductive pad 50 from above the front surface 21, forming an opening 30 extending from the rear surface 22 at least partially through a thickness of the semiconductor element 20, such that the at least one hole 30 and the opening 40 meet at a location between the front and rear surfaces, and forming at least one conductive element 60, 80 exposed at the rear surface 22 for electrical connection to an external device, the at least one conductive element extending within the at least one hole 30 and at least into the opening 40, the conductive element being electrically connected with the respective conductive pad 50.
摘要翻译：制造半导体组件10的方法可以包括提供具有前表面21，后表面22和多个导电焊盘50的半导体元件20，形成至少一个至少通过导电通过从前表面21上方施加到相应的导电焊盘50的处理的焊盘50形成从后表面22至少部分延伸穿过半导体元件20的厚度的开口30，使得至少一个孔30和开口40在前表面和后表面之间的位置相遇，并且形成在后表面22处暴露的至少一个导电元件60,80，用于电连接到外部装置，所述至少一个导电元件在至少一个孔内延伸 30并且至少进入开口40中，导电元件与相应的导电焊盘50电连接。

5. 发明申请

WO2012011933A1 MICROELECTRONIC ELEMENTS WITH POST-ASSEMBLY PLANARIZATION 审中-公开
标题翻译：具有后组装平面化的微电子元件
公开(公告)号：WO2012011933A1
公开(公告)日：2012-01-26
申请号：PCT/US2010/052792
申请日：2010-10-15
申请人： TESSERA, INC. , OGANESIAN, Vage , HABA, Belgacem , MITCHELL, Craig , MOHAMMED, Ilyas , SAVALIA, Piyush
发明人： OGANESIAN, Vage , HABA, Belgacem , MITCHELL, Craig , MOHAMMED, Ilyas , SAVALIA, Piyush
IPC分类号： H05K5/00
CPC分类号： H01L21/76819 , H01L21/76877 , H01L23/13 , H01L23/3128 , H01L23/49827 , H01L23/4985 , H01L23/5389 , H01L24/18 , H01L24/19 , H01L24/24 , H01L24/25 , H01L24/82 , H01L24/97 , H01L25/105 , H01L25/117 , H01L25/16 , H01L25/50 , H01L2224/04105 , H01L2224/12105 , H01L2224/16227 , H01L2224/16235 , H01L2224/24227 , H01L2224/24247 , H01L2224/32225 , H01L2224/32245 , H01L2224/73267 , H01L2224/92244 , H01L2224/97 , H01L2225/1023 , H01L2225/1029 , H01L2225/1035 , H01L2225/1041 , H01L2225/1052 , H01L2225/1058 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01061 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/07811 , H01L2924/10253 , H01L2924/12042 , H01L2924/14 , H01L2924/15153 , H01L2924/15156 , H01L2924/15165 , H01L2924/15192 , H01L2924/15311 , H01L2924/15313 , H01L2924/15331 , H01L2924/157 , H01L2924/15788 , H01L2924/18161 , Y10T29/49002 , H01L2224/81 , H01L2924/00 , H01L2224/82 , H01L2224/83
摘要： A microelectronic unit includes a carrier structure having a front surface, a rear surface remote from the front surface, and a recess having an opening at the front surface and an inner surface located below the front surface of the carrier structure. The microelectronic unit can include a microelectronic element having a bottom surface adjacent the inner surface, a top surface remote from the bottom surface, and a plurality of contacts at the top surface. The microelectronic element can include terminals electrically connected with the contacts of the microelectronic element. The microelectronic unit can include a dielectric region contacting at least the top surface of the microelectronic element. The dielectric region can have a planar surface located coplanar with or above the front surface of the carrier structure. The terminals can be exposed at the surface of the dielectric region for interconnection with an external element.
摘要翻译：微电子单元包括具有前表面，远离前表面的后表面和在前表面具有开口的凹部和位于载体结构的前表面下方的内表面的载体结构。微电子单元可以包括具有邻近内表面的底表面，远离底表面的顶表面和在顶表面处的多个触点的微电子元件。微电子元件可以包括与微电子元件的触点电连接的端子。微电子单元可以包括至少与微电子元件的顶表面接触的电介质区域。电介质区域可以具有与载体结构的前表面共面或平行的平面。端子可以暴露在电介质区域的表面以与外部元件互连。

6. 发明申请

WO2012074571A1 MICROELECTRONIC ASSEMBLY WITH PLURAL STACKED ACTIVE CHIPS HAVING THROUGH - SILICON VIAS FORMED IN STAGES 审中-公开
标题翻译：微型电子组件，具有通过层状结构形成的层状活性炭
公开(公告)号：WO2012074571A1
公开(公告)日：2012-06-07
申请号：PCT/US2011/029568
申请日：2011-03-23
申请人： TESSERA, INC. , OGANESIAN, Vage , HABA, Belgacem , MOHAMMED, Ilyas , MITCHELL, Craig , SAVALIA, Piyush
发明人： OGANESIAN, Vage , HABA, Belgacem , MOHAMMED, Ilyas , MITCHELL, Craig , SAVALIA, Piyush
IPC分类号： H01L23/48 , H01L25/065
CPC分类号： H01L25/00 , H01L21/76805 , H01L21/76898 , H01L23/3178 , H01L23/481 , H01L24/81 , H01L24/92 , H01L24/94 , H01L25/0657 , H01L25/50 , H01L2224/0401 , H01L2224/05009 , H01L2224/13025 , H01L2224/16225 , H01L2224/29109 , H01L2224/29111 , H01L2224/29144 , H01L2224/29188 , H01L2224/2919 , H01L2224/32145 , H01L2224/32245 , H01L2224/73253 , H01L2224/83005 , H01L2224/9202 , H01L2224/94 , H01L2225/06513 , H01L2225/06527 , H01L2225/06541 , H01L2924/10253 , H01L2924/1032 , H01L2924/1037 , H01L2924/12042 , H01L2924/14 , H01L2924/1433 , H01L2924/1436 , H01L2924/1437 , H01L2924/15311 , H01L2224/83 , H01L2924/00
摘要： A microelectronic assembly 100 is provided in which first and second electrically conductive pads 108, 106 exposed at front surfaces of first and second microelectronic elements 110, 102, respectively, are juxtaposed, each of the microelectronic elements embodying active semiconductor devices. An electrically conductive element 114 may extend within a first opening 111 extending from a rear surface 118 of the first microelectronic element 110 towards the front surface 103 thereof, within a second opening 113 extending from the first opening 111 towards the front surface 103 of the first microelectronic element 110, and within a third opening 180 extending through at least one of the first and second pads 108, 106 to contact the first and second pads. Interior surfaces 121, 123 of the first and second openings 111, 113 may extend in first and second directions relative to the front surface 103 of the first microelectronic element 110, respectively, to define a substantial angle.
摘要翻译：提供了微电子组件100，其中分别暴露在第一和第二微电子元件110,102的前表面处的第一和第二导电焊盘108,106并置，每个微电子元件体现有源半导体器件。导电元件114可以在从第一微电子元件110的后表面118延伸到其前表面103的第一开口111内，在从第一开口111朝向第一开口111的前表面103延伸的第一开口113内延伸微电子元件110，以及延伸穿过第一和第二焊盘108,106中的至少一个的第三开口180内，以接触第一和第二焊盘。第一和第二开口111,113的内表面121,123可以分别相对于第一微电子元件110的前表面103在第一和第二方向上延伸，以限定大致的角度。

7. 发明申请

WO2012011928A1 MICROELECTRONIC ELEMENTS WITH REAR CONTACTS CONNECTED WITH VIA FIRST OR VIA MIDDLE STRUCTURES 审中-公开
标题翻译：具有通过第一个或通过中间结构连接的后接触器的微电子元件
公开(公告)号：WO2012011928A1
公开(公告)日：2012-01-26
申请号：PCT/US2010/052458
申请日：2010-10-13
申请人： TESSERA, INC. , OGANESIAN, Vage , HABA, Belgacem , MOHAMMED, Ilyas , MITCHELL, Craig , SAVALIA, Piyush
发明人： OGANESIAN, Vage , HABA, Belgacem , MOHAMMED, Ilyas , MITCHELL, Craig , SAVALIA, Piyush
IPC分类号： H01L21/00
CPC分类号： H01L21/76898 , H01L23/481 , H01L24/05 , H01L24/06 , H01L24/16 , H01L25/0657 , H01L2224/02372 , H01L2224/02375 , H01L2224/02377 , H01L2224/0401 , H01L2224/05548 , H01L2224/06166 , H01L2224/06181 , H01L2224/13024 , H01L2224/131 , H01L2224/13111 , H01L2224/1329 , H01L2224/133 , H01L2224/16146 , H01L2224/16227 , H01L2224/17181 , H01L2224/81801 , H01L2224/8182 , H01L2224/8185 , H01L2224/94 , H01L2924/014 , H01L2924/00014 , H01L2224/03 , H01L2224/81
摘要： A microelectronic unit, microelectronic element, e g, an integrated circuit chip, having a semiconductor region of monocrystalline form. The semiconductor region has a front surface extending in a first direction, an active circuit element adjacent the front surface, a rear surface remote from the front surface and a conductive which extends towards the rear surface The conductive can be insulated from the semiconductor region by an inorganic dielectric layer An opening can extend from the rear surface partially through a thickness of the semiconductor region, with the opening and the conductive via having respective widths, in the first direction The width of the opening may be greater than the width of the conductive via where the opening meets the conductive via A rear contact can be electrically connected to the conductive and exposed at the rear surface for electrical connection with an external circuit element.
摘要翻译：微电子单元，微电子元件，例如具有单晶形式的半导体区域的集成电路芯片。半导体区域具有在第一方向上延伸的前表面，与前表面相邻的有源电路元件，远离前表面的后表面和朝向后表面延伸的导电体。导电体可以与半导体区域绝缘无机介电层开口可以从后表面部分地延伸穿过半导体区域的厚度，其中开口和导电通孔在第一方向上具有相应的宽度。开口的宽度可以大于导电通孔的宽度其中开口与导电通孔相接触A后触点可以电连接到导电并暴露在后表面以与外部电路元件电连接。

8. 发明申请

WO2012079013A1 HIGH DENSITY THREE-DIMENSIONAL INTEGRATED CAPACITORS 审中-公开
标题翻译：高密度三维集成电容器
公开(公告)号：WO2012079013A1
公开(公告)日：2012-06-14
申请号：PCT/US2011/064219
申请日：2011-12-09
申请人： TESSERA, INC. , OGANESIAN, Vage , HABA, Belgacem , MOHAMMED, Ilyas , SAVALIA, Piyush
发明人： OGANESIAN, Vage , HABA, Belgacem , MOHAMMED, Ilyas , SAVALIA, Piyush
IPC分类号： H01L21/02 , H01L21/768 , H01L23/48 , H01L23/64
CPC分类号： H01L28/91 , H01L23/481 , H01L28/60 , H01L2223/6622 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： A component (10) includes a substrate (20) and a capacitor (40). The substrate (20) can have first and second surfaces (21, 22) and an opening (30) extending from the first surface. The capacitor (40) can include first, second, third, and fourth conductive plates (61, 62, 71, 72), each plate extending along an inner surface (31) of the opening (30). The capacitor (40) can include first and second electrodes (163, 164) exposed at first and second spaced apart locations, and third and fourth electrodes (173, 174) exposed at third and fourth spaced apart locations. The third plate (71) can overlie the first plate (61) and can be separated therefrom by a first dielectric layer (81). The second plate (62) can overlie the third plate (71) and can be separated therefrom by a second dielectric layer (82). The fourth plate (72) can overlie the second plate (62) and can be separated therefrom by a third dielectric layer (83).
摘要翻译：组件（10）包括衬底（20）和电容器（40）。衬底（20）可以具有从第一表面延伸的第一和第二表面（21,22）和开口（30）。电容器（40）可以包括第一，第二，第三和第四导电板（61,62,71,72），每个板沿着开口（30）的内表面（31）延伸。电容器（40）可以包括在第一和第二间隔开的位置处暴露的第一和第二电极（163,164），以及在第三和第四间隔开的位置暴露的第三和第四电极（173,174）。第三板（71）可以覆盖第一板（61），并且可以通过第一介电层（81）与第一板（61）分离。第二板（62）可以覆盖第三板（71），并且可以通过第二介电层（82）与第三板（71）分离。第四板（72）可以覆盖第二板（62），并且可以通过第三介电层（83）与第二板（72）分离。

9. 发明申请

WO2012037220A1 MULTI-FUNCTION AND SHIELDED 3D INTERCONNECTS 审中-公开
标题翻译：多功能和屏蔽三维互联
公开(公告)号：WO2012037220A1
公开(公告)日：2012-03-22
申请号：PCT/US2011/051556
申请日：2011-09-14
申请人： TESSERA, INC. , OGANESIAN, Vage , HABA, Belgacem , MOHAMMED, Ilyas , MITCHELL, Craig , SAVALIA, Piyush
发明人： OGANESIAN, Vage , HABA, Belgacem , MOHAMMED, Ilyas , MITCHELL, Craig , SAVALIA, Piyush
IPC分类号： H01L23/48 , H01L23/498
CPC分类号： H01L23/49827 , H01L21/6835 , H01L23/481 , H01L23/49838 , H01L24/03 , H01L24/05 , H01L24/06 , H01L2221/68327 , H01L2221/6834 , H01L2223/6622 , H01L2224/05009 , H01L2224/05553 , H01L2224/05554 , H01L2224/05555 , H01L2224/0557 , H01L2224/05644 , H01L2224/05647 , H01L2224/06181 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/12042 , H01L2924/14 , H01L2924/15788 , H01L2924/3011 , H01L2924/00014 , H01L2924/00
摘要： A microelectronic unit 10 includes a semiconductor element 20 consisting essentially of semiconductor material and having a front surface 21, a rear surface 22, a plurality of active semiconductor devices 23a, 23b adjacent the front surface 21, a plurality of conductive pads 50 exposed at the front surface 21, and an opening 30 extending through the semiconductor element 20. At least one of the conductive pads 50 can at least partially overlie the opening 30 and can be electrically connected with at least one of the active semiconductor devices 23a, 23b. The microelectronic unit 10 can also include a first conductive element 60 exposed at the rear surface 22 for connection with an external component, the first conductive element 60 extending through the opening 30 and electrically connected with the at least one conductive pad 50, and a second conductive element 40 extending through the opening 30 and insulated from the first conductive element 60. The at least one conductive pad 50 can overlie a peripheral edge 41 of the second conductive element 40.
摘要翻译：微电子单元10包括基本上由半导体材料组成并具有前表面21，后表面22，与前表面21相邻的多个有源半导体器件23a，23b的半导体元件20，在该表面21处暴露的多个导电焊盘50 前表面21和延伸穿过半导体元件20的开口30.至少一个导电焊盘50可以至少部分地覆盖开口30并且可以与有源半导体器件23a，23b中的至少一个电连接。微电子单元10还可以包括暴露在后表面22处用于与外部部件连接的第一导电元件60，第一导电元件60延伸穿过开口30并与至少一个导电焊盘50电连接，导电元件40延伸穿过开口30并与第一导电元件60绝缘。至少一个导电焊盘50可以覆盖在第二导电元件40的周边边缘41上。

10. 发明申请

WO2012011932A1 METHODS OF FORMING SEMICONDUCTOR ELEMENTS USING MICRO-ABRASIVE PARTICLE STREAM 审中-公开
标题翻译：使用微粉碎颗粒流形成半导体元件的方法
公开(公告)号：WO2012011932A1
公开(公告)日：2012-01-26
申请号：PCT/US2010/052785
申请日：2010-10-15
申请人： TESSERA , INC. , OGANESIAN, Vage , HABA, Belgacem , MITCHELL, Craig , MOHAMMED, Ilyas , SAVALIA, Piyush
发明人： OGANESIAN, Vage , HABA, Belgacem , MITCHELL, Craig , MOHAMMED, Ilyas , SAVALIA, Piyush
IPC分类号： H01L23/48
CPC分类号： H01L21/76898 , B24C1/045 , B24C3/322 , H01L23/481 , H01L23/4985 , H01L24/03 , H01L24/05 , H01L24/06 , H01L2224/03464 , H01L2224/05009 , H01L2224/0557 , H01L2224/05624 , H01L2224/05647 , H01L2224/05666 , H01L2224/06181 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01061 , H01L2924/01076 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10329 , H01L2924/14 , H01L2924/1433 , H01L2924/1434 , H01L2224/05552 , H01L2924/00
摘要： A method of fabricating a microelectronic unit 210 includes providing a semiconductor element 220 having a front 222 and rear surface 221 remote from the front surface, forming at least one opening 230 extending from the rear surface 221 through the semiconductor element 220 towards the front surface 222 by directing a jet of fine abrasive particles towards the semiconductor element, forming at least one second opening 240 extending from the first opening 230 to a bottom surface 251 of one conductive pad 250 exposed at the front surface 222, and forming at least one conductive contact 290 and at least one conductive interconnect 280a, 280b together. Each conductive interconnect 280a, 280b can extend within one or more of the first openings 230 and can be coupled to at least one conductive pad 250.
摘要翻译：制造微电子单元210的方法包括提供具有远离前表面的前222和后表面221的半导体元件220，形成从后表面221穿过半导体元件220朝向前表面222延伸的至少一个开口230 通过将精细磨料颗粒的射流引向半导体元件，形成从第一开口230延伸到暴露在前表面222处的一个导电焊盘250的底表面251的至少一个第二开口240，并形成至少一个导电接触 290和至少一个导电互连280a，280b在一起。每个导电互连280a，280b可以在一个或多个第一开口230内延伸并且可以耦合到至少一个导电焊盘250。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式