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1. 发明申请

WO2012075371A1 STACKED MICROELECTRONIC ASSEMBLY HAVING INTERPOSER CONNECTING ACTIVE CHIPS 审中-公开
标题翻译：具有连接主动插座的插座的堆叠式微电子组件
公开(公告)号：WO2012075371A1
公开(公告)日：2012-06-07
申请号：PCT/US2011/063025
申请日：2011-12-02
申请人： TESSERA, INC. , HABA, Belgacem , OGANESIAN, Vage , MOHAMMED, Ilyas , SAVALIA, Piyush , MITCHELL, Craig
发明人： HABA, Belgacem , OGANESIAN, Vage , MOHAMMED, Ilyas , SAVALIA, Piyush , MITCHELL, Craig
IPC分类号： H01L25/065 , H01L23/48 , H01L25/16
CPC分类号： H01L25/0657 , H01L21/486 , H01L21/76898 , H01L23/36 , H01L23/481 , H01L23/49822 , H01L23/49827 , H01L25/16 , H01L2224/16225 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06572 , H01L2924/15311
摘要： A microelectronic assembly (100) can include first and second microelectronic elements (102, 112) each embodying active semiconductor devices adjacent a front surface (104, 114) thereof, and an interposer (120) of a material having a CTE less than 10 ppm/°C. Each microelectronic element (102, 112) can have a conductive pad (106, 116) exposed at the respective front surface (104, 114). The interposer (120) can have a second conductive element (118) extending within an opening (222) in the interposer and exposed at first and second surfaces (227, 229) of the interposer. The first and second surfaces (227, 229) can face the front surface (104, 114) of the respective first and second microelectronic elements (102, 112). Each microelectronic element (102, 112) can include a first conductive element (236, 238) extending within an opening (206, 216) extending from a rear surface (237, 239) towards the front surface (104, 114) of the respective microelectronic element. At least one of the first conductive elements (236, 238) can extend through the conductive pad (204, 214) of the respective first or second microelectronic element (102, 112).
摘要翻译：微电子组件（100）可以包括第一和第二微电子元件（102,112），每个微电子元件（102,112）各自体现邻近其前表面（104,114）的有源半导体器件，以及具有CTE小于10ppm的材料的插入件（120） /C。每个微电子元件（102,112）可以具有在相应的前表面（104,114）处暴露的导电垫（106,116）。插入器（120）可以具有在插入器中的开口（222）内延伸并在插入件的第一和第二表面（227,229）处露出的第二导电元件（118）。第一和第二表面（227,229）可面对相应的第一和第二微电子元件（102,112）的前表面（104,114）。每个微电子元件（102,112）可以包括第一导电元件（236,238），该第一导电元件（236,238）在从后表面（237,239）朝向相应的后表面（227,119）的前表面（104,114）延伸的开口（206,216）内延伸微电子元件。第一导电元件（236,238）中的至少一个可以延伸通过相应的第一或第二微电子元件（102,112）的导电焊盘（204,214）。

2. 发明申请

WO2012074570A2 STACKED MICROELECTRONIC ASSEMBLY WITH TSVS FORMED IN STAGES AND CARRIER ABOVE CHIP 审中-公开
标题翻译：堆叠式微电脑组件与TSVS在步骤中形成和载体上面的芯片
公开(公告)号：WO2012074570A2
公开(公告)日：2012-06-07
申请号：PCT/US2011/029394
申请日：2011-03-22
申请人： TESSERA, INC , OGANESIAN, Vage , HABA, Belgacem , MOHAMMED, Ilyas , MITCHELL, Craig , SAVALIA, Piyush
发明人： OGANESIAN, Vage , HABA, Belgacem , MOHAMMED, Ilyas , MITCHELL, Craig , SAVALIA, Piyush
IPC分类号： H01L21/60
CPC分类号： H01L23/481 , H01L21/76802 , H01L21/76805 , H01L21/76877 , H01L21/76898 , H01L21/78 , H01L23/145 , H01L23/147 , H01L23/49827 , H01L24/11 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/81 , H01L24/83 , H01L24/89 , H01L24/92 , H01L2224/0401 , H01L2224/0557 , H01L2224/13009 , H01L2224/13099 , H01L2224/16225 , H01L2224/16235 , H01L2224/83 , H01L2224/9202 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01049 , H01L2924/01061 , H01L2924/01074 , H01L2924/01082 , H01L2924/014 , H01L2924/12042 , H01L2924/14 , H01L2924/15311 , H01L2224/05552 , H01L2924/00
摘要： A microelectronic assembly 100 is provided which includes a first element 110 consisting essentially of at least one of semiconductor or inorganic dielectric material having a surface 103 facing and attached to a major surface 104 of a microelectronic element 102 at which a plurality of conductive pads 106 are exposed, the microelectronic element 102 having active semiconductor devices therein. A first opening 111 extends from an exposed surface 118 of the first element 110 towards the surface 103 attached to the microelectronic element 102, and a second opening 113 extends from the first opening 111 to a first one of the conductive pads 106, wherein where the first and second openings meet, interior surfaces 121, 123 of the first and second openings extend at different angles relative to the major surface 104 of the microelectronic element 102. A conductive element 114 extends within the first and second openings 111, 113 and contacts the at least one conductive pad 106.
摘要翻译：提供微电子组件100，其包括基本上由半导体或无机电介质材料中的至少一种组成的第一元件110，其具有面向103并附着到微电子元件102的主表面104的表面103，多个导电焊盘106 微电子元件102在其中具有有源半导体器件。第一开口111从第一元件110的暴露表面118延伸到附接到微电子元件102的表面103，并且第二开口113从第一开口111延伸到导电焊盘106中的第一开口111，其中第一和第二开口相交，第一和第二开口的内表面121,123相对于微电子元件102的主表面104以不同的角度延伸。导电元件114在第一和第二开口111,113内延伸并接触至少一个导电垫106。

3. 发明申请

WO2012037216A2 STAGED VIA FORMATION FROM BOTH SIDES OF CHIP 审中-公开
标题翻译：通过芯片的两面形成
公开(公告)号：WO2012037216A2
公开(公告)日：2012-03-22
申请号：PCT/US2011/051552
申请日：2011-09-14
申请人： TESSERA, INC. , OGANESIAN, Vage , HABA, Belgacem , MOHAMMED, Ilyas , MITCHELL, Craig , SAVALIA, Piyush
发明人： OGANESIAN, Vage , HABA, Belgacem , MOHAMMED, Ilyas , MITCHELL, Craig , SAVALIA, Piyush
IPC分类号： H01L21/768 , H01L23/48 , H01L25/065
CPC分类号： H01L23/481 , H01L21/76898 , H01L23/50 , H01L24/03 , H01L24/05 , H01L25/0657 , H01L25/50 , H01L2224/0401 , H01L2224/05009 , H01L2224/06181 , H01L2224/16145 , H01L2224/32145 , H01L2224/73204 , H01L2225/06513 , H01L2225/06541 , H01L2225/06544 , H01L2924/01322 , H01L2924/07811 , H01L2924/12042 , H01L2924/14 , H01L2924/00012 , H01L2924/00
摘要： A method of fabricating a semiconductor assembly 10 can include providing a semiconductor element 20 having a front surface 21, a rear surface 22, and a plurality of conductive pads 50, forming at least one hole 40 extending at least through a respective one of the conductive pads 50 by processing applied to the respective conductive pad 50 from above the front surface 21, forming an opening 30 extending from the rear surface 22 at least partially through a thickness of the semiconductor element 20, such that the at least one hole 30 and the opening 40 meet at a location between the front and rear surfaces, and forming at least one conductive element 60, 80 exposed at the rear surface 22 for electrical connection to an external device, the at least one conductive element extending within the at least one hole 30 and at least into the opening 40, the conductive element being electrically connected with the respective conductive pad 50.
摘要翻译：制造半导体组件10的方法可以包括提供具有前表面21，后表面22和多个导电焊盘50的半导体元件20，形成至少一个至少通过导电通过从前表面21上方施加到相应的导电焊盘50的处理的焊盘50形成从后表面22至少部分延伸穿过半导体元件20的厚度的开口30，使得至少一个孔30和开口40在前表面和后表面之间的位置相遇，并且形成在后表面22处暴露的至少一个导电元件60,80，用于电连接到外部装置，所述至少一个导电元件在至少一个孔内延伸 30并且至少进入开口40中，导电元件与相应的导电焊盘50电连接。

4. 发明申请

WO2012011933A1 MICROELECTRONIC ELEMENTS WITH POST-ASSEMBLY PLANARIZATION 审中-公开
标题翻译：具有后组装平面化的微电子元件
公开(公告)号：WO2012011933A1
公开(公告)日：2012-01-26
申请号：PCT/US2010/052792
申请日：2010-10-15
申请人： TESSERA, INC. , OGANESIAN, Vage , HABA, Belgacem , MITCHELL, Craig , MOHAMMED, Ilyas , SAVALIA, Piyush
发明人： OGANESIAN, Vage , HABA, Belgacem , MITCHELL, Craig , MOHAMMED, Ilyas , SAVALIA, Piyush
IPC分类号： H05K5/00
CPC分类号： H01L21/76819 , H01L21/76877 , H01L23/13 , H01L23/3128 , H01L23/49827 , H01L23/4985 , H01L23/5389 , H01L24/18 , H01L24/19 , H01L24/24 , H01L24/25 , H01L24/82 , H01L24/97 , H01L25/105 , H01L25/117 , H01L25/16 , H01L25/50 , H01L2224/04105 , H01L2224/12105 , H01L2224/16227 , H01L2224/16235 , H01L2224/24227 , H01L2224/24247 , H01L2224/32225 , H01L2224/32245 , H01L2224/73267 , H01L2224/92244 , H01L2224/97 , H01L2225/1023 , H01L2225/1029 , H01L2225/1035 , H01L2225/1041 , H01L2225/1052 , H01L2225/1058 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01061 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/07811 , H01L2924/10253 , H01L2924/12042 , H01L2924/14 , H01L2924/15153 , H01L2924/15156 , H01L2924/15165 , H01L2924/15192 , H01L2924/15311 , H01L2924/15313 , H01L2924/15331 , H01L2924/157 , H01L2924/15788 , H01L2924/18161 , Y10T29/49002 , H01L2224/81 , H01L2924/00 , H01L2224/82 , H01L2224/83
摘要： A microelectronic unit includes a carrier structure having a front surface, a rear surface remote from the front surface, and a recess having an opening at the front surface and an inner surface located below the front surface of the carrier structure. The microelectronic unit can include a microelectronic element having a bottom surface adjacent the inner surface, a top surface remote from the bottom surface, and a plurality of contacts at the top surface. The microelectronic element can include terminals electrically connected with the contacts of the microelectronic element. The microelectronic unit can include a dielectric region contacting at least the top surface of the microelectronic element. The dielectric region can have a planar surface located coplanar with or above the front surface of the carrier structure. The terminals can be exposed at the surface of the dielectric region for interconnection with an external element.
摘要翻译：微电子单元包括具有前表面，远离前表面的后表面和在前表面具有开口的凹部和位于载体结构的前表面下方的内表面的载体结构。微电子单元可以包括具有邻近内表面的底表面，远离底表面的顶表面和在顶表面处的多个触点的微电子元件。微电子元件可以包括与微电子元件的触点电连接的端子。微电子单元可以包括至少与微电子元件的顶表面接触的电介质区域。电介质区域可以具有与载体结构的前表面共面或平行的平面。端子可以暴露在电介质区域的表面以与外部元件互连。

5. 发明申请

WO2004111659A2 METHODS AND APPARATUS FOR PACKAGING INTEGRATED CIRCUIT DEVICES 审中-公开
标题翻译：包装集成电路设备的方法和装置
公开(公告)号：WO2004111659A2
公开(公告)日：2004-12-23
申请号：PCT/IL2004/000521
申请日：2004-06-16
申请人： SHELLCASE LTD. , ZILBER, Gil , KATRARO, Reuven , AKSENTON, Julia , OGANESIAN, Vage
发明人： ZILBER, Gil , KATRARO, Reuven , AKSENTON, Julia , OGANESIAN, Vage
IPC分类号： G01R
CPC分类号： H01L24/13 , H01L23/3114 , H01L24/11 , H01L24/12 , H01L24/94 , H01L2224/02319 , H01L2224/02321 , H01L2224/02335 , H01L2224/0236 , H01L2224/024 , H01L2224/0401 , H01L2224/13099 , H01L2224/274 , H01L2924/0001 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01057 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/00
摘要： An integrally packaged integrated circuit device including an integrated circuit die including a crystalline substrate having first and second generally planar surfaces and edge surfaces and an active surface formed on the first generally planar surface, at least one chip scale packaging layer formed over the active surface and at least one electrical contact formed over the at least one chip scale packaging layer, the at least one electrical contact being connected to circuitry on the active surface by at least one pad formed on the first generally planar surface.
摘要翻译：一种集成封装的集成电路器件，包括集成电路管芯，该集成电路管芯包括具有第一和第二大致平面的表面和边缘表面的结晶衬底和形成在第一大致平坦表面上的有源表面，形成在有源表面上的至少一个芯片级封装层，至少一个电触点形成在所述至少一个芯片级封装层上，所述至少一个电触点通过形成在所述第一大致平坦表面上的至少一个焊盘连接到所述有源表面上的电路。

6. 发明申请

WO2012106000A1 BSI IMAGE SENSOR PACKAGE WITH VARIABLE-HEIGHT SILICON FOR EVEN RECEPTION OF DIFFERENT WAVELENGTHS 审中-公开
标题翻译： BSI图像传感器包含可变高度硅，以便接收不同波长
公开(公告)号：WO2012106000A1
公开(公告)日：2012-08-09
申请号：PCT/US2011/035732
申请日：2011-05-09
申请人： DIGITALOPTICS CORPORATION EAST , OGANESIAN, Vage , HABA, Belgacem , MOHAMMED, Ilyas , SAVALIA, Piyush , MITCHELL, Craig
发明人： OGANESIAN, Vage , HABA, Belgacem , MOHAMMED, Ilyas , SAVALIA, Piyush , MITCHELL, Craig
IPC分类号： H01L27/146
CPC分类号： H01L27/14625 , H01L27/1461 , H01L27/14629 , H01L27/14632 , H01L27/1464 , H01L27/14645 , H01L27/14687
摘要： A microelectronic image sensor assembly (10) for backside illumination and method of making same are provided. The assembly (10) includes a microelectronic element (100) having contacts (106) exposed at a front face (102) and light sensing elements (114) arranged to receive light of different wavelengths through a rear face (104). A semiconductor region (110) has a first thickness (112a) between the first light sensing element (114a) and the rear face (104) and a second thickness (112b) between the second light sensing element (114b) and the rear face (104) such that the first and second light sensing elements (114a, 114b) receive light of substantially the same intensity. A dielectric region (116) is provided at least substantially filling a space of the semiconductor region (110) adjacent at least one of the light sensing elements (114). The dielectric region (116) may include at least one light guide (280).
摘要翻译：提供了一种用于背面照明的微电子图像传感器组件（10）及其制造方法。组件（10）包括具有暴露在前表面（102）处的触点（106）的微电子元件（100）和被布置成通过后表面（104）接收不同波长的光的光感测元件（114）。半导体区域（110）在第一光感测元件（114a）和后表面（104）之间具有第一厚度（112a）和在第二光感测元件（114b）和后表面（114b）之间的第二厚度（112b） 104），使得第一和第二光感测元件（114a，114b）接收基本上相同强度的光。电介质区域（116）至少基本上填充与至少一个感光元件（114）相邻的半导体区域（110）的空间。电介质区域（116）可以包括至少一个光导（280）。

7. 发明申请

WO2012078213A1 HIGH DENSITY THREE-DIMENSIONAL INTEGRATED CAPACITORS 审中-公开
标题翻译：高密度三维集成电容器
公开(公告)号：WO2012078213A1
公开(公告)日：2012-06-14
申请号：PCT/US2011/044026
申请日：2011-07-14
申请人： TESSERA INC , MOHAMMED, Ilyas , HABA, Belgacem , UZOH, Cyprian , SAVALIA, Piyush , OGANESIAN, Vage
发明人： MOHAMMED, Ilyas , HABA, Belgacem , UZOH, Cyprian , SAVALIA, Piyush , OGANESIAN, Vage
IPC分类号： H01L21/02 , H01L21/768 , H01L23/48
CPC分类号： H01L28/91 , H01L23/481 , H01L28/60 , H01L2223/6622 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： A capacitor 340 includes a substrate 320 having a first surface 321, a second surface 322 remote from the first surface, and a through opening 330 extending between the first and second surfaces, first and second metal elements 360, 370, and a capacitor dielectric layer 380 separating and insulating the first and second metal elements from one another at least within the through opening. The first metal element 360 is exposed at the first surface 321 and extends into the through opening 330. The second metal element 370 is exposed at the second surface 322 and extends into the through opening 330. The first and second metal elements 360, 370 are electrically connectable to first and second electric potentials. The capacitor dielectric layer 380 has an undulating shape.
摘要翻译：电容器340包括具有第一表面321，远离第一表面的第二表面322和在第一和第二表面之间延伸的通孔330的基底320，第一和第二金属元件360,370以及电容器电介质层 380至少在所述通孔内分离和绝缘所述第一和第二金属元件。第一金属元件360在第一表面321处露出并延伸到通孔330中。第二金属元件370在第二表面322处露出并延伸到通孔330中。第一和第二金属元件360,370是电连接到第一和第二电位。电容器介电层380具有波状形状。

8. 发明申请

WO2012037216A3 STAGED VIA FORMATION FROM BOTH SIDES OF CHIP 审中-公开
标题翻译：通过芯片的两侧形成
公开(公告)号：WO2012037216A3
公开(公告)日：2012-06-07
申请号：PCT/US2011051552
申请日：2011-09-14
申请人： TESSERA INC , OGANESIAN VAGE , HABA BELGACEM , MOHAMMED ILYAS , MITCHELL CRAIG , SAVALIA PIYUSH
发明人： OGANESIAN VAGE , HABA BELGACEM , MOHAMMED ILYAS , MITCHELL CRAIG , SAVALIA PIYUSH
IPC分类号： H01L21/768 , H01L23/48 , H01L25/065
CPC分类号： H01L23/481 , H01L21/76898 , H01L23/50 , H01L24/03 , H01L24/05 , H01L25/0657 , H01L25/50 , H01L2224/0401 , H01L2224/05009 , H01L2224/06181 , H01L2224/16145 , H01L2224/32145 , H01L2224/73204 , H01L2225/06513 , H01L2225/06541 , H01L2225/06544 , H01L2924/01322 , H01L2924/07811 , H01L2924/12042 , H01L2924/14 , H01L2924/00012 , H01L2924/00
摘要： A method of fabricating a semiconductor assembly 10 can include providing a semiconductor element 20 having a front surface 21, a rear surface 22, and a plurality of conductive pads 50, forming at least one hole 40 extending at least through a respective one of the conductive pads 50 by processing applied to the respective conductive pad 50 from above the front surface 21, forming an opening 30 extending from the rear surface 22 at least partially through a thickness of the semiconductor element 20, such that the at least one hole 30 and the opening 40 meet at a location between the front and rear surfaces, and forming at least one conductive element 60, 80 exposed at the rear surface 22 for electrical connection to an external device, the at least one conductive element extending within the at least one hole 30 and at least into the opening 40, the conductive element being electrically connected with the respective conductive pad 50.
摘要翻译：制造半导体组件10的方法可以包括提供具有前表面21，后表面22和多个导电焊盘50的半导体元件20，形成至少一个孔40，所述至少一个孔40至少延伸穿过相应的一个导电通过处理从前表面21上方施加到相应的导电焊盘50的焊盘50形成从后表面22至少部分地延伸穿过半导体元件20的厚度的开口30，使得至少一个孔30和开口40在前表面和后表面之间的位置汇合，并且形成暴露在后表面22处用于电连接到外部装置的至少一个导电元件60,80，所述至少一个导电元件在至少一个孔并且至少进入开口40中，导电元件与相应的导电垫50电连接。

9. 发明申请

WO2011028245A1 WAFER LEVEL COMPLIANT PACKAGES FOR REAR-FACE ILLUMINATED SOLID STATE IMAGE SENSORS 审中-公开
标题翻译：用于后置照明固体状态图像传感器的WAFER LEVEL合规包
公开(公告)号：WO2011028245A1
公开(公告)日：2011-03-10
申请号：PCT/US2010/002318
申请日：2010-08-20
申请人： TESSERA, INC. , CRISP, Richard, Dewitt , HABA, Belgacem , OGANESIAN, Vage
发明人： CRISP, Richard, Dewitt , HABA, Belgacem , OGANESIAN, Vage
IPC分类号： H01L23/498 , H01L31/0203
CPC分类号： H01L24/14 , H01L24/05 , H01L24/13 , H01L27/14618 , H01L27/14627 , H01L27/14636 , H01L27/14683 , H01L27/14685 , H01L31/0203 , H01L2223/54453 , H01L2224/02372 , H01L2224/02377 , H01L2224/0401 , H01L2224/05548 , H01L2224/05567 , H01L2224/05572 , H01L2224/13022 , H01L2224/13024 , H01L2224/131 , H01L2224/14131 , H01L2224/14166 , H01L2224/16225 , H01L2224/16227 , H01L2224/94 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01057 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/01322 , H01L2924/014 , H01L2924/14 , H01L2924/15788 , H01L2224/11 , H01L2224/05552 , H01L2924/00
摘要： A solid state image sensor (11A) includes a microelectronic element (10A) having a front face (13) and a rear face (15A) remote from the front face (13), the rear face having a recess (23) extending towards the front surface. A plurality of light sensing elements (14A) may be disposed adjacent to the front face so as to receive light through the part of the rear face within the recess. A solid state image sensor can include a microelectronic element, e.g., a semiconductor chip, having a front face and a rear face remote from the front face, a plurality of light sensing elements disposed adjacent to the front face, the light sensing elements being arranged to receive light through the rear face. A packaging structure, which can include a compliant layer (622), can be attached to a front surface of the microelectronic element.
摘要翻译：固态图像传感器（11A）包括具有远离前表面（13）的前表面（13）和后表面（15A）的微电子元件（10A），后表面具有朝向前面多个光感测元件（14A）可以布置成与前表面相邻，以便通过凹部内的后表面的一部分接收光。固态图像传感器可以包括微电子元件，例如具有远离前表面的前表面和后表面的半导体芯片，与前表面相邻设置的多个光感测元件，光感测元件被布置通过后面接收光。可以包括柔性层（622）的包装结构可附接到微电子元件的前表面。

10. 发明申请

WO2009048604A3 ROBUST MULTI-LAYER WIRING ELEMENTS AND ASSEMBLIES WITH EMBEDDED MICROELECTRONIC ELEMENTS 审中-公开
标题翻译：坚固的多层线路元件和嵌入式微电子元件组件
公开(公告)号：WO2009048604A3
公开(公告)日：2009-09-24
申请号：PCT/US2008011632
申请日：2008-10-08
申请人： TESSERA INC , HABA BELGACEM , OGANESIAN VAGE , ENDO KIMITAKA
发明人： HABA BELGACEM , OGANESIAN VAGE , ENDO KIMITAKA
IPC分类号： H05K3/46 , H01L23/12 , H01L23/48
CPC分类号： H01L21/486 , H01L21/4857 , H01L23/49822 , H01L23/49827 , H01L23/5389 , H01L24/24 , H01L24/82 , H01L25/0652 , H01L25/0657 , H01L25/105 , H01L25/16 , H01L2224/24226 , H01L2225/06524 , H01L2225/06541 , H01L2225/1023 , H01L2225/1058 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/14 , H01L2924/1461 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30105 , H01L2924/30107 , H05K1/185 , H05K3/0038 , H05K3/4038 , H05K3/4647 , H05K3/4652 , H05K2201/0355 , H05K2201/0361 , H05K2201/0382 , H05K2201/096 , H05K2203/0384 , H05K2203/0733 , H05K2203/1189 , H01L2924/00
摘要： An interconnect element (130) can include a dielectric layer (116) having a top face (116b) and a bottom face (116a) remote from the top face, a first metal layer defining a plane extending along the bottom face and a second metal layer extending along the top face. One of the first or second metal layers, or both, can include a plurality of conductive traces (132, 134). A plurality of conductive protrusions (112) can extend upwardly from the plane defined by the first metal layer (102) through the dielectric layer (116). The conductive protrusions (112) can have top surfaces (126) at a first height (115) above the first metal layer (132) which may be more than 50% of a height of the dielectric layer. A plurality of conductive vias (128) can extend from the top surfaces (126) of the protrusions (112) to connect the protrusions (112) with the second metal layer.
摘要翻译：互连元件（130）可以包括具有远离顶面的顶面（116b）和底面（116a）的介电层（116），限定沿着底面延伸的平面的第一金属层以及第二金属层沿着顶面延伸。第一或第二金属层之一或两者可以包括多个导电迹线（132,134）。多个导电突起（112）可以从由第一金属层（102）限定的平面穿过介电层（116）向上延伸。导电凸起（112）可以具有在第一金属层（132）上方的第一高度（115）处的顶表面（126），其可以大于电介质层的高度的50％。多个导电通孔（128）可以从突起（112）的顶表面（126）延伸以将突起（112）与第二金属层连接。

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