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1. 发明授权

US08173521B2 Method for manufacturing bonded wafer 有权
标题翻译：贴合晶圆的制造方法
公开(公告)号：US08173521B2
公开(公告)日：2012-05-08
申请号：US12452085
申请日：2008-07-03
申请人： Norihiro Kobayashi , Hiroji Aga , Yasuo Nagaoka , Nobuhiko Noto
发明人： Norihiro Kobayashi , Hiroji Aga , Yasuo Nagaoka , Nobuhiko Noto
IPC分类号： H01L21/30
CPC分类号： H01L21/76254 , H01L21/02057 , H01L21/26506
摘要： The present invention is a method for manufacturing a bonded wafer by an ion implantation delamination method including at least the steps of, bonding a bond wafer having a micro bubble layer formed by gas ion implantation with a base wafer to be a supporting substrate, delaminating the bond wafer along the micro bubble layer as a boundary to form a thin film on the base wafer, the method comprising, cleaning the bonded wafer after delaminating the bond wafer using ozone water; performing rapid thermal anneal process under a hydrogen containing atmosphere; forming a thermal oxide film on a surface layer of the bonded wafer by subjecting to heat treatment under an oxidizing gas atmosphere and removing the thermal oxide film; subjecting to heat treatment under a non-oxidizing gas atmosphere. As a result, the method for manufacturing a bonded wafer, which can remove the damage caused by the ion implantation and can suppress a occurrence of the concave defects without deterioration of surface roughness on the surface of the thin film of the bonded wafer after delamination is provided.
摘要翻译：本发明是一种通过离子注入分层方法制造接合晶片的方法，该方法至少包括将具有通过气体离子注入形成的微气泡层的接合晶片与基底晶片接合成为支撑基板的步骤，沿着微气泡层接合晶片作为边界以在基底晶片上形成薄膜，所述方法包括：在使用臭氧水分离所述接合晶片之后清洁所述接合晶片; 在含氢气氛下进行快速热退火工艺; 通过在氧化气体气氛下进行热处理并除去热氧化膜，在接合晶片的表面层上形成热氧化膜; 在非氧化性气体气氛下进行热处理。结果，能够去除离子注入引起的损伤的粘合晶片的制造方法，能够抑制脱层后的接合晶片的表面的表面粗糙度的劣化的凹陷缺陷的发生，提供。

2. 发明授权

US07521334B2 Method for producing direct bonded wafer and direct bonded wafer 有权
标题翻译：直接接合晶片和直接接合晶片的制造方法
公开(公告)号：US07521334B2
公开(公告)日：2009-04-21
申请号：US11659283
申请日：2005-11-29
申请人： Norihiro Kobayashi , Toru Ishizuka , Tomohiko Ohta , Hiroji Aga , Yasuo Nagaoka
发明人： Norihiro Kobayashi , Toru Ishizuka , Tomohiko Ohta , Hiroji Aga , Yasuo Nagaoka
IPC分类号： H01L21/30
CPC分类号： H01L21/2007 , H01L21/76254
摘要： A method for producing a direct bonded wafer comprising: forming a thermal oxide film or a CVD oxide film on a surface of at least one of a bond wafer and a base wafer, and bonding the wafer to the other wafer via the oxide film; subsequently thinning the bond wafer to prepare a bonded wafer; and thereafter conducting a process of annealing the bonded wafer under an atmosphere including any one of an inert gas, hydrogen and a mixed gas of an inert gas and hydrogen so that the oxide film between the bond wafer and the base wafer is removed to bond the bond wafer directly to the base wafer. Thereby, there is provided a method for producing a direct bonded wafer in which generation of voids is reduced, and a direct bonded wafer with a low void count.
摘要翻译：一种直接接合晶片的制造方法，包括：在接合晶片和基底晶片中的至少一个的表面上形成热氧化膜或CVD氧化膜，并且经由所述氧化膜将所述晶片接合到所述另一方的晶片; 随后使接合晶片变薄以制备接合晶片; 然后在惰性气体，氢气和惰性气体与氢气的混合气体中的任何一种的气氛下进行退火接合晶片的工序，从而去除接合晶片和基底晶片之间的氧化膜，将晶片直接接合到基底晶片。因此，提供了一种制造空穴产生减少的直接接合晶片的方法和具有低空隙率的直接接合晶片。

3. 发明申请

US20090117706A1 Manufacturing Method of SOI Wafer and SOI Wafer Manufactured by This Method 审中-公开
标题翻译：通过这种方法制造的SOI晶片和SOI晶片的制造方法
公开(公告)号：US20090117706A1
公开(公告)日：2009-05-07
申请号：US11887574
申请日：2006-04-04
申请人： Yasutsugu Soeta , Yasuo Nagaoka
发明人： Yasutsugu Soeta , Yasuo Nagaoka
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： There is provided a method of manufacturing an SOI wafer by an ion implantation delamination method, comprising at least: forming an oxide film on a surface of at least one of a base wafer and a bond wafer functioning as an SOI layer; implanting at least one of a hydrogen ion and a rare gas ion from a surface of the bond wafer to form an ion implanted layer; subsequently bringing the bond wafer into close contact with the base wafer via the oxide film; performing a heat treatment to cause delamination in the ion implanted layer so that the SOI layer is formed; then conducing a heat treatment in an oxidizing atmosphere to form an oxide film on the surface of the SOI layer; subsequently removing the oxide film by etching; then cleaning the surface of the SOI layer by using ozone water; and polishing the same. As a result, in an ion implantation delamination method, a method of manufacturing a high-quality SOI wafer which can remove a damaged layer and surface roughness remaining on the SOI layer surface after delamination while maintaining film thickness uniformity of the SOI layer is provided.
摘要翻译：提供了一种通过离子注入分层方法制造SOI晶片的方法，该方法至少包括：在用作SOI层的基底晶片和接合晶片中的至少一个的表面上形成氧化膜; 从接合晶片的表面注入氢离子和稀有气体离子中的至少一种以形成离子注入层; 随后通过氧化膜使接合晶片与基底晶片紧密接触; 进行热处理，使离子注入层分层，形成SOI层; 然后在氧化气氛中进行热处理，以在SOI层的表面上形成氧化膜; 随后通过蚀刻去除氧化膜; 然后用臭氧水清洗SOI层的表面; 并抛光。结果，在离子注入剥离方法中，提供了一种制造可以去除损伤层的高质量SOI晶片的方法和在分层之后残留在SOI层表面上的表面粗糙度，同时保持SOI层的膜厚均匀性。

4. 发明申请

US20100120223A1 METHOD FOR MANUFACTURING BONDED WAFER 有权
标题翻译：制造粘结波的方法
公开(公告)号：US20100120223A1
公开(公告)日：2010-05-13
申请号：US12452085
申请日：2008-07-03
申请人： Norihiro Kobayashi , Hiroji Aga , Yasuo Nagaoka , Nobuhiko Noto
发明人： Norihiro Kobayashi , Hiroji Aga , Yasuo Nagaoka , Nobuhiko Noto
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L21/02057 , H01L21/26506
摘要： The present invention is a method for manufacturing a bonded wafer by an ion implantation delamination method including at least the steps of, bonding a bond wafer having a micro bubble layer formed by gas ion implantation with a base wafer to be a supporting substrate, delaminating the bond wafer along the micro bubble layer as a boundary to form a thin film on the base wafer, the method comprising, cleaning the bonded wafer after delaminating the bond wafer using ozone water; performing rapid thermal anneal process under a hydrogen containing atmosphere; forming a thermal oxide film on a surface layer of the bonded wafer by subjecting to heat treatment under an oxidizing gas atmosphere and removing the thermal oxide film; subjecting to heat treatment under a non-oxidizing gas atmosphere. As a result, the method for manufacturing a bonded wafer, which can remove the damage caused by the ion implantation and can suppress a occurrence of the concave defects without deterioration of surface roughness on the surface of the thin film of the bonded wafer after delamination is provided.
摘要翻译：本发明是一种通过离子注入分层方法制造接合晶片的方法，该方法至少包括将具有通过气体离子注入形成的微气泡层的接合晶片与基底晶片接合成为支撑基板的步骤，沿着微气泡层接合晶片作为边界以在基底晶片上形成薄膜，所述方法包括：在使用臭氧水分离所述接合晶片之后清洁所述接合晶片; 在含氢气氛下进行快速热退火工艺; 通过在氧化气体气氛下进行热处理并除去热氧化膜，在接合晶片的表面层上形成热氧化膜; 在非氧化性气体气氛下进行热处理。结果，能够去除离子注入引起的损伤的粘合晶片的制造方法，能够抑制脱层后的接合晶片的表面的表面粗糙度的劣化的凹陷缺陷的发生，提供。

5. 发明申请

US20080102603A1 Method for Producing Direct Bonded Wafer and Direct Bonded Wafer 有权
标题翻译：生产直接粘结晶片和直接粘结晶片的方法
公开(公告)号：US20080102603A1
公开(公告)日：2008-05-01
申请号：US11659283
申请日：2005-11-29
申请人： Norihiro Kobayashi , Toru Ishizuka , Tomohiko Ohta , Hiroji Aga , Yasuo Nagaoka
发明人： Norihiro Kobayashi , Toru Ishizuka , Tomohiko Ohta , Hiroji Aga , Yasuo Nagaoka
IPC分类号： H01L21/46
CPC分类号： H01L21/2007 , H01L21/76254
摘要： A method for producing a direct bonded wafer comprising: forming a thermal oxide film or a CVD oxide film on a surface of at least one of a bond wafer and a base wafer, and bonding the wafer to the other wafer via the oxide film; subsequently thinning the bond wafer to prepare a bonded wafer; and thereafter conducting a process of annealing the bonded wafer under an atmosphere including any one of an inert gas, hydrogen and a mixed gas of an inert gas and hydrogen so that the oxide film between the bond wafer and the base wafer is removed to bond the bond wafer directly to the base wafer. Thereby, there is provided a method for producing a direct bonded wafer in which generation of voids is reduced, and a direct bonded wafer with a low void count.
摘要翻译：一种直接接合晶片的制造方法，包括：在接合晶片和基底晶片中的至少一个的表面上形成热氧化膜或CVD氧化膜，并且经由所述氧化膜将所述晶片接合至所述另一方的晶片; 随后使接合晶片变薄以制备接合晶片; 然后在惰性气体，氢气和惰性气体与氢气的混合气体中的任何一种的气氛下进行退火接合晶片的工序，从而去除接合晶片和基底晶片之间的氧化膜，将晶片直接接合到基底晶片。因此，提供了一种制造空穴产生减少的直接接合晶片的方法和具有低空隙率的直接接合晶片。

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