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1. 发明授权

US5766375A Non-oriented magnetic steel sheet having excellent bending workability 失效
标题翻译：具有优异的弯曲加工性的无取向磁性钢板
公开(公告)号：US5766375A
公开(公告)日：1998-06-16
申请号：US821421
申请日：1997-03-21
申请人： Susumu Okamura , Etsuji Hino , Yoshinori Fujita , Masaki Shimizu , Tetsuya Aoki , Shoichi Takenouchi
发明人： Susumu Okamura , Etsuji Hino , Yoshinori Fujita , Masaki Shimizu , Tetsuya Aoki , Shoichi Takenouchi
IPC分类号： C21D8/12 , C22C38/00 , C22C38/06 , H01F1/16 , H01F1/04
CPC分类号： C21D8/1233 , C22C38/06 , C21D8/1244 , C21D8/1272
摘要： A non-oriented magnetic steel sheet having excellent bending workability and magnetic characteristics is obtained by continuous annealing. The non-oriented magnetic steel sheet is obtained by the method comprising cold rolling a hot-rolled steel sheet, continuously annealing the steel sheet, and then performing skin pass rolling; the steel has a composition comprising about 0.005 mass % or less of C, about 0.05 to 0.30 mass % of Si, about 0.10 to 0.50 mass % of Mn, about 0.15 to 0.50 mass % of Al, and about 0.0050 mass % or less of N.
摘要翻译：通过连续退火获得具有优异的弯曲加工性和磁特性的无取向电磁钢板。无取向电磁钢板通过冷轧热轧钢板，连续退火钢板，然后进行表皮轧制的方法获得; 钢的组成为：C：0.005质量％以下，Si：0.05〜0.30质量％，Mn：0.10〜0.50质量％，Al：0.15〜0.50质量％，Al：0.0050质量％ N.

2. 发明授权

US08570690B2 Magnetic sensor having a hard bias seed structure 有权
标题翻译：具有硬偏置种子结构的磁传感器
公开(公告)号：US08570690B2
公开(公告)日：2013-10-29
申请号：US13164610
申请日：2011-06-20
申请人： Susumu Okamura , Hiroyuki Hoshiya , Takahiro Ibusuki
发明人： Susumu Okamura , Hiroyuki Hoshiya , Takahiro Ibusuki
IPC分类号： G11B5/39
CPC分类号： G11B5/39 , B82Y10/00 , G11B5/3912 , G11B5/3932 , G11B2005/3996
摘要： A magnetic sensor having a novel hard bias structure that provides reduced gap spacing for increased data density. The magnetic sensor includes a sensor stack with first and second sides formed on a magnetic shield. A thin insulation layer is formed over the sides of the sensor stack and over the bottom shield. An under-layer comprising Cu—O is formed over the insulation layer and a hard magnetic bias layer is formed over the under-layer. The use of Cu—O as the under-layer allows the under-layer to be made thinner while still maintaining excellent magnetic properties in the hard bias layers formed there-over. This reduced thickness of the under-layer allows the gap spacing (spacing between the top and bottom magnetic shields) to be reduced, which in turn provides increased data density.
摘要翻译：具有新型硬偏置结构的磁传感器，其提供减小的间隙间隔以增加数据密度。磁传感器包括传感器堆叠，其中第一和第二侧形成在磁屏蔽上。在传感器堆叠的两侧和底部屏蔽层之上形成薄的绝缘层。在绝缘层之上形成包含Cu-O的底层，并且在下层上形成硬磁偏置层。使用Cu-O作为下层允许底层变薄，同时在其上形成的硬偏压层中仍然保持优异的磁性能。下层的这种减小的厚度允许减小间隙间隔（顶部和底部磁屏蔽之间的间隔），这进而提供增加的数据密度。

3. 发明授权

US5629553A Variable inductance element using an inductor conductor 失效
标题翻译：使用电感导体的可变电感元件
公开(公告)号：US5629553A
公开(公告)日：1997-05-13
申请号：US338847
申请日：1994-11-14
申请人： Takeshi Ikeda , Susumu Okamura , Akira Okamoto
发明人： Takeshi Ikeda , Susumu Okamura , Akira Okamoto
IPC分类号： H01F17/00 , H01F21/12 , H01L27/06 , H01L29/00
CPC分类号： H01L27/0617 , H01F17/0006 , H01F21/12 , H01F2017/0086 , H01F2021/125
摘要： A variable inductance element comprising an inductor conductor 10 having a predetermined shape formed on an insulation layer 40 on the surface of a semiconductor substrate 42, switches 16 and 24 for shorting portions of the inductor conductor 10, and input/output terminals 12 and 14 provided at the respective ends of the inductor conductor 10. When switches 16 and/or 24 is in the on state, the function as an inductor having a smaller inductance than the overall inductor conductor 10 is obtained. The inductance of this variable inductance element can be changed by external control, while manufacturing is easy and formation in a unitized manner with an integrated circuit or other semiconductor device is enabled.
摘要翻译：一种可变电感元件，包括形成在半导体衬底42的表面上的绝缘层40上的具有预定形状的电感器导体10，用于短路电感器导体10的部分的开关16和24以及提供的输入/输出端子12和14 在电感器导体10的各端处。当开关16和/或24处于导通状态时，获得具有比整个电感器导体10小的电感的电感器的功能。该可变电感元件的电感可以通过外部控制来改变，而制造容易，并且能够以集成电路或其他半导体器件为单位形成。

4. 发明授权

US5497028A LC element and semiconductor device having a signal transmission line and LC element manufacturing method 失效
标题翻译：具有信号传输线和LC元件制造方法的LC元件和半导体器件
公开(公告)号：US5497028A
公开(公告)日：1996-03-05
申请号：US335420
申请日：1994-11-02
申请人： Takeshi Ikeda , Susumu Okamura
发明人： Takeshi Ikeda , Susumu Okamura
IPC分类号： H01L27/08 , H03H7/01 , H01L29/00
CPC分类号： H01L27/08 , H03H7/0115 , H01F2017/008 , H03H2001/0064 , H03H2001/0078 , Y10S438/901
摘要： An LC element and an semiconductor device comprising a second electrode having a predetermined shape formed in direct contact with the surface of a semiconductor substrate, and a first electrode having a predetermined shape formed interspaced by an insulation layer on the semiconductor substrate surface; and a method of manufacturing the LC element. A channel formed along the first electrode on application of a predetermined gate voltage to a control electrode connected to the first electrode and the second electrode respectively function as inductors, while a distributed constant type capacitor is also formed between these; and by using the channel as a signal transmission line, the LC element and a semiconductor device give excellent attenuation characteristics. The LC element and semiconductor device are easily manufactured, while parts assembly work in subsequent processing can be abbreviated, formation as a portion of an IC or LSI device is possible, and characteristics can also be controlled.
摘要翻译：一种LC元件和半导体器件，包括具有与半导体衬底的表面直接接触形成的预定形状的第二电极，以及具有由半导体衬底表面上的绝缘层间隔开的预定形状的第一电极; 以及LC元件的制造方法。在连接到第一电极和第二电极的控制电极上施加预定的栅极电压时，沿着第一电极形成的通道分别用作电感器，而在它们之间也形成分布常数型电容器。并且通过使用该信道作为信号传输线，LC元件和半导体器件具有优异的衰减特性。 LC元件和半导体器件容易制造，而可以缩短后续处理中的零件组装工作，可以形成IC或LSI器件的一部分，并且还可以控制特性。

5. 发明授权

US08451565B1 Magnetoresistive head having perpendicularly offset anisotropy films and a hard disk drive using the same 有权
标题翻译：具有垂直偏移的各向异性膜的磁阻头和使用其的硬盘驱动器
公开(公告)号：US08451565B1
公开(公告)日：2013-05-28
申请号：US13301596
申请日：2011-11-21
申请人： Susumu Okamura , Takahiro Ibusuki
发明人： Susumu Okamura , Takahiro Ibusuki
IPC分类号： G11B5/33
CPC分类号： G11B5/3932 , G01R33/093 , Y10T29/49032 , Y10T428/1121
摘要： In one embodiment, a magnetic head includes a lower shield layer, a sensor stack positioned above the lower shield layer, the sensor stack including a free layer, a layered hard bias magnet positioned above the lower shield layer and on both sides of the sensor stack in a track width direction, and an upper shield layer positioned above the hard bias magnet and the sensor stack. The hard bias magnet includes a perpendicular anisotropy film positioned above the lower shield layer and aligned with both sides of the sensor stack in the track width direction, wherein the perpendicular anisotropy film directs magnetic fields in a direction perpendicular to planes of formation thereof, and an in-plane anisotropy film positioned above the perpendicular anisotropy film, wherein the in-plane anisotropy film directs magnetic fields in a direction of planes of formation thereof.
摘要翻译：在一个实施例中，磁头包括下屏蔽层，位于下屏蔽层上方的传感器堆叠，传感器堆叠包括自由层，位于下屏蔽层上方并位于传感器堆叠两侧的分层硬偏置磁体并且位于硬偏置磁体和传感器堆叠之上的上屏蔽层。硬偏磁体包括位于下屏蔽层上方的垂直各向异性膜，并且沿着磁道宽度方向与传感器堆叠的两侧对齐，其中垂直各向异性膜在与其形成平面垂直的方向上引导磁场，位于垂直各向异性膜之上的面内各向异性膜，其中面内各向异性膜在其形成平面的方向上引导磁场。

6. 发明申请

US20100188771A1 Magnetoresistive Magnetic Head 有权
标题翻译：磁阻磁头
公开(公告)号：US20100188771A1
公开(公告)日：2010-07-29
申请号：US12636649
申请日：2009-12-11
申请人： Susumu Okamura , Yo Sato , Katsumi Hoshino , Hiroyuki Hoshiya , Kenichi Meguro , Keizo Kato
发明人： Susumu Okamura , Yo Sato , Katsumi Hoshino , Hiroyuki Hoshiya , Kenichi Meguro , Keizo Kato
IPC分类号： G11B21/02 , G11B5/39
CPC分类号： H01F10/3268 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B2005/3996 , H01F10/1936 , H01L43/08 , Y10T428/1121
摘要： A magnetoresistive magnetic head according to one embodiment uses a current-perpendicular-to-plane magnetoresistive element having a laminate of a free layer, an intermediate layer, and a pinned layer, the pinned layer being substantially fixed to a magnetic field to be detected, wherein either the pinned layer or the free layer includes a Heusler alloy layer represented by a composition of X-Y-Z, wherein X is between about 45 at. % and about 55 at. % and is Co or Fe, Y accounts for between about 20 at. % and about 30 at. % and is one or more elements selected from V, Cr, Mn, and Fe, and Z is between about 20 at. % and about 35 at. % and is one or more elements selected from Al, Si, Ga, Ge, Sn, and Sb, the other layer including a high saturation magnetization material layer having higher saturation magnetization than that of the Heusler alloy, and where the direction of the current flowing perpendicular to plane being a direction in which an electron flows from the Heusler alloy layer into the high saturation magnetization material layer. Additional embodiments are also presented.
摘要翻译：根据一个实施例的磁阻磁头使用具有自由层，中间层和被钉扎层的叠层的电流 - 垂直于平面的磁阻元件，被钉扎层基本上固定在待检测的磁场上，其中所述被钉扎层或所述自由层包括由XYZ的组合物表示的Heusler合金层，其中X在约45at之间。％和约55在。％，为Co或Fe，Y约为20盎司。％和约30在。％且为选自V，Cr，Mn和Fe中的一种或多种元素，Z为约20at。％和约35英寸％，并且是选自Al，Si，Ga，Ge，Sn和Sb中的一种或多种元素，另一层包括具有比Heusler合金高饱和磁化强度的高饱和磁化材料层，并且其中电流方向垂直于平面流动的方向是电子从Heusler合金层流入高饱和磁化材料层的方向。还提供了另外的实施例。

7. 发明授权

US5557138A LC element and semiconductor device 失效
标题翻译： LC元件和半导体器件
公开(公告)号：US5557138A
公开(公告)日：1996-09-17
申请号：US329520
申请日：1994-10-26
申请人： Takeshi Ikeda , Susumu Okamura
发明人： Takeshi Ikeda , Susumu Okamura
IPC分类号： H01L27/08 , H03H7/01 , H01L27/04 , H01L27/02
CPC分类号： H03H7/0115 , H01L27/08 , H03H2001/0064 , H03H2001/0078
摘要： An LC element with a pn junction layer formed near the surface of a p-Si substrate by forming an n.sup.+ region having a predetermined shape and in a portion thereof additionally forming a p.sup.+ region having the same shape, and with first and second electrodes formed over entire length on the surface of this pn junction layer; wherein the two electrodes respectively function as inductors and by using the pn junction layer with reverse bias, a distributed constant type capacitor is formed between these inductors, thereby providing excellent attenuation characteristics over a wide band, a semiconductor device including the LC element, and a method of manufacturing the LC element.This LC element and semiconductor device can be easily manufactured; in the case of manufacturing as a portion of an IC or LSI device, component assembly work in subsequent processing can be abbreviated, and by changing the capacitance of the distributed constant type capacitor according to requirements, the characteristics can be changed.
摘要翻译：具有通过形成具有预定形状的n +区形成在p-Si衬底的表面附近的pn结层的LC元件，并且在其另外形成具有相同形状的p +区的部分中，并且形成有第一和第二电极该pn结层表面的整个长度; 其中两个电极分别用作电感器并且通过使用具有反向偏压的pn结层，在这些电感器之间形成分布常数型电容器，从而在宽带上提供优异的衰减特性，包括LC元件的半导体器件和制造LC元件的方法。该LC元件和半导体器件可以容易地制造; 在作为IC或LSI器件的一部分制造的情况下，可以缩短后续处理中的部件组装工作，并且通过根据要求改变分布式恒定型电容器的电容，可以改变特性。

8. 发明授权

US08189304B2 Magnetoresistive magnetic head having a cpp element using a heusler alloy layer and a high saturation magnetization layer 有权
标题翻译：具有使用heusler合金层和高饱和磁化层的cpp元件的磁阻磁头
公开(公告)号：US08189304B2
公开(公告)日：2012-05-29
申请号：US12636649
申请日：2009-12-11
申请人： Susumu Okamura , Yo Sato , Katsumi Hoshino , Hiroyuki Hoshiya , Kenichi Meguro , Keizo Kato
发明人： Susumu Okamura , Yo Sato , Katsumi Hoshino , Hiroyuki Hoshiya , Kenichi Meguro , Keizo Kato
IPC分类号： G11B5/39
CPC分类号： H01F10/3268 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B2005/3996 , H01F10/1936 , H01L43/08 , Y10T428/1121
摘要： A magnetoresistive magnetic head according to one embodiment uses a current-perpendicular-to-plane magnetoresistive element having a laminate of a free layer, an intermediate layer, and a pinned layer, the pinned layer being substantially fixed to a magnetic field to be detected, wherein either the pinned layer or the free layer includes a Heusler alloy layer represented by a composition of X—Y—Z, wherein X is between about 45 at. % and about 55 at. % and is Co or Fe, Y accounts for between about 20 at. % and about 30 at. % and is one or more elements selected from V, Cr, Mn, and Fe, and Z is between about 20 at. % and about 35 at. % and is one or more elements selected from Al, Si, Ga, Ge, Sn, and Sb, the other layer including a high saturation magnetization material layer having higher saturation magnetization than that of the Heusler alloy, and where the direction of the current flowing perpendicular to plane being a direction in which an electron flows from the Heusler alloy layer into the high saturation magnetization material layer. Additional embodiments are also presented.
摘要翻译：根据一个实施例的磁阻磁头使用具有自由层，中间层和被钉扎层的叠层的电流 - 垂直于平面的磁阻元件，被钉扎层基本上固定在待检测的磁场上，其中被钉扎层或自由层包括由X-Y-Z组合物表示的Heusler合金层，其中X在约45at之间。％和约55在。％，为Co或Fe，Y约为20盎司。％和约30在。％且为选自V，Cr，Mn和Fe中的一种或多种元素，Z为约20at。％和约35英寸％，并且是选自Al，Si，Ga，Ge，Sn和Sb中的一种或多种元素，另一层包括具有比Heusler合金高饱和磁化强度的高饱和磁化材料层，并且其中电流方向垂直于平面流动的方向是电子从Heusler合金层流入高饱和磁化材料层的方向。还提供了另外的实施例。

9. 发明授权

US5492856A Method of forming a semiconductor device having a LC element 失效
标题翻译：形成具有LC元件的半导体器件的方法
公开(公告)号：US5492856A
公开(公告)日：1996-02-20
申请号：US460165
申请日：1995-06-02
申请人： Takeshi Ikeda , Susumu Okamura
发明人： Takeshi Ikeda , Susumu Okamura
IPC分类号： H01L27/08 , H03H7/01 , H01L21/70 , H01L27/00
CPC分类号： H01L27/08 , H03H7/0115 , H01F2017/008 , H03H2001/0064 , H03H2001/0078 , Y10S438/901
摘要： An LC element with a pn junction layer formed near the surface of a p-Si substrate by forming an n.sup.+ region having a predetermined shape and in a portion thereof additionally forming a p.sup.+ region having the same shape, and with first and second electrodes formed over entire length on the surface of this pn junction layer; wherein the two electrodes respectively function as inductors and by using the pn junction layer with reverse bias, a distributed constant type capacitor is formed between these inductors, thereby providing excellent attenuation characteristics over a wide band, a semiconductor device including the LC element, and a method of manufacturing the LC element. This LC element and semiconductor device can be easily manufactured; in the case of manufacturing as a portion of an IC or LSI device, component assembly work in subsequent processing can be abbreviated, and by changing the capacitance of the distributed constant type capacitor according to requirements, the characteristics can be changed.
摘要翻译：具有通过形成具有预定形状的n +区形成在p-Si衬底的表面附近的pn结层的LC元件，并且在其另外形成具有相同形状的p +区的部分中，并且形成有第一和第二电极该pn结层表面的整个长度; 其中两个电极分别用作电感器并且通过使用具有反向偏压的pn结层，在这些电感器之间形成分布常数型电容器，从而在宽带上提供优异的衰减特性，包括LC元件的半导体器件和制造LC元件的方法。该LC元件和半导体器件可以容易地制造; 在作为IC或LSI器件的一部分制造的情况下，可以缩短后续处理中的部件组装工作，并且通过根据要求改变分布式恒定型电容器的电容，可以改变特性。

10. 发明申请

US20120320473A1 MAGNETIC SENSOR HAVING A HARD BIAS SEED STRUCTURE 有权
标题翻译：具有硬度偏差结构的磁感应传感器
公开(公告)号：US20120320473A1
公开(公告)日：2012-12-20
申请号：US13164610
申请日：2011-06-20
申请人： Susumu Okamura , Hiroyuki Hoshiya , Takahiro Ibusuki
发明人： Susumu Okamura , Hiroyuki Hoshiya , Takahiro Ibusuki
IPC分类号： G11B21/24 , G11B5/39
CPC分类号： G11B5/39 , B82Y10/00 , G11B5/3912 , G11B5/3932 , G11B2005/3996
摘要： A magnetic sensor having a novel hard bias structure that provides reduced gap spacing for increased data density. The magnetic sensor includes a sensor stack with first and second sides formed on a magnetic shield. A thin insulation layer is formed over the sides of the sensor stack and over the bottom shield. An under-layer comprising Cu—O is formed over the insulation layer and a hard magnetic bias layer is formed over the under-layer. The use of Cu—O as the under-layer allows the under-layer to be made thinner while still maintaining excellent magnetic properties in the hard bias layers formed thereover. This reduced thickness of the under-layer allows the gap spacing (spacing between the top and bottom magnetic shields) to be reduced, which in turn provides increased data density.
摘要翻译：具有新型硬偏置结构的磁传感器，其提供减小的间隙间隔以增加数据密度。磁传感器包括传感器堆叠，其中第一和第二侧形成在磁屏蔽上。在传感器堆叠的两侧和底部屏蔽层之上形成薄的绝缘层。在绝缘层之上形成包含Cu-O的底层，并且在下层上形成硬磁偏置层。通过使用Cu-O作为下层，能够使底层变薄，同时在其上形成的硬质偏压层中保持优异的磁性能。下层的这种减小的厚度允许减小间隙间隔（顶部和底部磁屏蔽之间的间隔），这进而提供增加的数据密度。

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